JP2000299413A - Manufacture of resin-sealed electronic device - Google Patents

Manufacture of resin-sealed electronic device

Info

Publication number
JP2000299413A
JP2000299413A JP11108417A JP10841799A JP2000299413A JP 2000299413 A JP2000299413 A JP 2000299413A JP 11108417 A JP11108417 A JP 11108417A JP 10841799 A JP10841799 A JP 10841799A JP 2000299413 A JP2000299413 A JP 2000299413A
Authority
JP
Japan
Prior art keywords
resin
circuit board
sealing resin
heating
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11108417A
Other languages
Japanese (ja)
Inventor
Kenji Morimoto
謙治 森本
Shigetoshi Segawa
茂俊 瀬川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11108417A priority Critical patent/JP2000299413A/en
Publication of JP2000299413A publication Critical patent/JP2000299413A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Landscapes

  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent generation of warpages or deformations of a circuit board or of air bubbles in a sealing resin, in the manufacturing technology for resin- sealed electronic device such as semiconductor packages. SOLUTION: This method for manufacturing a resin-sealed electronic device is used to cover an electronic component 20 mounted to a circuit board 10 with a sealing resin 30 and to harden the sealing resin 30, so as to seal the electronic part 20. In this case, the method includes a step (a) for supplying the sealing resin 30 to cover the electronic component 20 mounted to the circuit board 10, a first heating step (b) to heat the sealing resin 30 supplied to the circuit board 10 in the step (a) at a lower temperature than the complete hardening temperature, and a second heating step (c) for heating the sealing resin 30 at a higher temperature than that of the step (b), where the sealing resin is hardened completely.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、樹脂封止電子装置
の製造方法に関し、詳しくは、回路基板に搭載される半
導体チップなどの電子部品を樹脂で封止して電子部品を
保護しておく技術を対象にしている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a resin-sealed electronic device, and more particularly, to protecting an electronic component such as a semiconductor chip mounted on a circuit board by sealing the electronic component with a resin. The technology is targeted.

【０００２】[0002]

【従来の技術】回路基板上に搭載された半導体チップを
樹脂で封止して、いわゆる半導体パッケージを構成する
ことは既に知られた技術である。このような半導体パッ
ケージを製造するには、繊維強化樹脂やセラミックから
なる回路基板の上に、半導体チップを搭載し、半導体チ
ップと回路基板の回路とをワイヤーボンディングで接続
したあと、半導体チップおよびワイヤーボンディング部
分を含む範囲に、エポキシ樹脂などの絶縁性の封止樹脂
を塗布して覆ってしまい、封止樹脂を加熱硬化させるこ
とで、半導体チップをボンディングワイヤとともに樹脂
中に封止する。2. Description of the Related Art It is a known technique to seal a semiconductor chip mounted on a circuit board with a resin to form a so-called semiconductor package. To manufacture such a semiconductor package, a semiconductor chip is mounted on a circuit board made of fiber-reinforced resin or ceramic, and the semiconductor chip and the circuit of the circuit board are connected by wire bonding. An insulating sealing resin such as an epoxy resin is applied to cover the area including the bonding portion, and the semiconductor chip is sealed in the resin together with the bonding wires by heating and curing the sealing resin.

【０００３】樹脂封止された半導体チップは、外力によ
る損傷から保護されるとともに、外部環境の湿度やガス
などの影響を受け難くなり、腐食や経時的性能低下を防
いで、信頼性あるいは耐久性を高めることができる。[0003] A resin-sealed semiconductor chip is protected from damage due to external force, is less susceptible to the effects of humidity and gas of the external environment, prevents corrosion and deterioration over time, and has improved reliability or durability. Can be increased.

【０００４】[0004]

【発明が解決しようとする課題】前記した半導体パッケ
ージの製造方法では、封止樹脂を加熱硬化させたとき
に、回路基板に反りや変形が発生するという問題があ
る。封止樹脂が加熱硬化するときには硬化収縮を起こ
す。この硬化収縮量が大きくなると、回路基板との間に
大きな熱応力が発生して回路基板を変形させてしまうの
である。The above-described method of manufacturing a semiconductor package has a problem that the circuit board is warped or deformed when the sealing resin is cured by heating. When the sealing resin is cured by heating, curing contraction occurs. If the curing shrinkage is large, a large thermal stress is generated between the circuit board and the circuit board, and the circuit board is deformed.

【０００５】回路基板が変形すると、回路基板にさらに
別の電子部品を実装したりする作業が行い難くなる。例
えば、回路基板の変形した表面には、電子部品を実装す
るためのクリームハンダなどの印刷が正確に行えない。
回路基板の裏面にフリップチップ素子などの微細結合を
必要とする部品を実装すると、接合不良が多発する。複
数の樹脂封止半導体チップが搭載された回路基板から、
個々の樹脂封止半導体チップ毎に回路基板を分割切断す
る作業も、反りや変形のある回路基板では、切断個所が
正確に設定し難く、切断作業も困難になる。When the circuit board is deformed, it becomes difficult to mount another electronic component on the circuit board. For example, on a deformed surface of a circuit board, printing such as cream solder for mounting electronic components cannot be performed accurately.
When a component that requires fine coupling, such as a flip chip device, is mounted on the back surface of the circuit board, bonding failures frequently occur. From the circuit board on which multiple resin-encapsulated semiconductor chips are mounted,
In the work of dividing and cutting the circuit board for each resin-sealed semiconductor chip, it is difficult to accurately set a cutting position on a warped or deformed circuit board, and the cutting work is also difficult.

【０００６】また、樹脂封止技術における別の問題とし
て、硬化過程で、封止樹脂の中に気泡（ボイド）が発生
するという問題がある。封止樹脂中に存在していたり加
熱によって発生したガス成分は、流動状態の封止樹脂か
ら外部に放出されるのであるが、樹脂の硬化があまり迅
速に進行してしまうと、ガス成分が樹脂に閉じ込められ
たままで樹脂が硬化してしまって、気泡が形成されてし
まう。Another problem in the resin sealing technique is that bubbles (voids) are generated in the sealing resin during the curing process. Gas components that are present in the sealing resin or generated by heating are released from the sealing resin in a flowing state to the outside.However, if the curing of the resin proceeds too quickly, the gas component becomes The resin is hardened while being trapped in the space, and bubbles are formed.

【０００７】樹脂中の気泡は、回路基板に対するその後
の処理工程における熱履歴により、気泡が膨張して半導
体チップやボンディングワイヤを破壊したり機能を損な
ったりすることになる。本発明の課題は、前記した半導
体パッケージなどの樹脂封止電子装置の製造技術におい
て、回路基板に反りや変形が発生したり、封止樹脂中に
気泡が生じることを防止することである。[0007] Bubbles in the resin expand due to the thermal history of the circuit board in a subsequent processing step, which breaks the semiconductor chip and bonding wires and impairs their functions. An object of the present invention is to prevent a circuit board from being warped or deformed or from generating air bubbles in a sealing resin in the above-described technology for manufacturing a resin-sealed electronic device such as a semiconductor package.

【０００８】[0008]

【課題を解決するための手段】本発明にかかる樹脂封止
電子装置の製造方法は、回路基板上に搭載された電子部
品を封止樹脂で覆い、封止樹脂を硬化させて電子部品を
封止する樹脂封止電子装置の製造方法であって、以下の
工程を含む。 (a) 前記回路基板上に搭載された前記電子部品を覆って
前記封止樹脂を供給する工程。According to a method of manufacturing a resin-sealed electronic device according to the present invention, an electronic component mounted on a circuit board is covered with a sealing resin, and the sealing resin is cured to seal the electronic component. A method of manufacturing a resin-sealed electronic device for stopping, comprising the following steps. (a) a step of supplying the sealing resin so as to cover the electronic component mounted on the circuit board;

【０００９】(b) 前工程(a) で回路基板上に供給され
た封止樹脂を、完全硬化温度よりも低い温度で加熱する
第１加熱工程。 (c) 前工程(b) よりも高く封止樹脂が完全硬化する温
度で加熱する第２加熱工程。 〔回路基板〕回路基板の材質については特に限定はな
く、各種の樹脂基板あるいはセラミック基板、さらには
フレキシブル基板などが用いられる。回路基板には、電
子部品の搭載構造とともに、電子部品の接続端子と電気
的に導通させて電気的処理を行う配線や回路構造を設け
ておくことができる。 〔電子部品〕回路基板に搭載される電子部品は、半導体
チップのほか、各種の固体電子部品が用いられる。(B) A first heating step of heating the sealing resin supplied on the circuit board in the previous step (a) at a temperature lower than the complete curing temperature. (c) a second heating step of heating at a temperature higher than that of the previous step (b) so that the sealing resin is completely cured. [Circuit Board] The material of the circuit board is not particularly limited, and various resin substrates, ceramic substrates, and flexible substrates are used. The circuit board may be provided with a wiring structure or a circuit structure for performing electrical processing by electrically connecting to a connection terminal of the electronic component together with a mounting structure of the electronic component. [Electronic Components] As the electronic components mounted on the circuit board, various solid-state electronic components are used in addition to the semiconductor chips.

【００１０】電子部品は、回路基板に物理的に固定され
るとともに、電子部品と回路基板の配線回路とが電気的
に接続される。電子部品を回路基板に物理的に固定する
には、ハンダ接続、接着剤による接着、金−シリコン共
晶などの金属接合、嵌合固定、金具による固定など、通
常の電子部品の固定手段が採用される。The electronic component is physically fixed to the circuit board, and the electronic component is electrically connected to the wiring circuit of the circuit board. In order to physically fix the electronic components to the circuit board, ordinary electronic component fixing means such as solder connection, bonding with an adhesive, metal bonding such as gold-silicon eutectic, fitting fixing, and fixing with metal fittings are adopted. Is done.

【００１１】電子部品と回路基板との電気的接続は、電
子部品の端子と回路基板の端子とをハンダなどで直接に
接続することもできるし、ボンディングワイヤを用いて
接続することもできる。ボンディングワイヤとしては、
金やアルミニウム、ハンダなどの金属材料が用いられ
る。一つの回路基板には、一つの電子部品だけが搭載さ
れる場合もあるし、複数の電子部品が搭載される場合も
ある。 〔封止樹脂〕通常の半導体パッケージなどに利用されて
いる封止樹脂材料が用いられる。具体的には、エポキシ
系熱硬化性樹脂などの熱硬化性樹脂が使用される。熱硬
化性樹脂には、１液型および２液型の樹脂がある。ま
た、ペレット状の固形樹脂を用いることもできる。 〔樹脂供給工程(a) 〕回路基板上に電子部品を搭載し、
物理的あるいは電気的に接続したあと、電子部品を覆っ
て、封止樹脂を供給する。封止樹脂は通常、液状あるい
は流動ペースト状をなす状態で、樹脂供給用ディスペン
サなどの供給手段を用いて供給される。封止樹脂を流動
状態にするために加熱しておくこともできる。固形の樹
脂を所定位置に配置したあと、加熱により溶融させて流
動化させることもできる。この加熱は、硬化のための加
熱と一連の工程で行われてもよい。印刷技術を利用して
樹脂を供給することもできる。The electrical connection between the electronic component and the circuit board can be made by directly connecting the terminal of the electronic component and the terminal of the circuit board with solder or the like, or by using a bonding wire. As a bonding wire,
Metal materials such as gold, aluminum, and solder are used. One electronic component may be mounted on one circuit board, or a plurality of electronic components may be mounted on one circuit board. [Sealing Resin] A sealing resin material used for an ordinary semiconductor package or the like is used. Specifically, a thermosetting resin such as an epoxy-based thermosetting resin is used. Thermosetting resins include one-pack and two-pack resins. Further, a pellet-shaped solid resin can also be used. [Resin supply step (a)] Electronic components are mounted on a circuit board,
After being physically or electrically connected, the sealing resin is supplied to cover the electronic components. The sealing resin is usually supplied in a liquid or fluid paste state using a supply means such as a resin supply dispenser. The sealing resin may be heated to make it flowable. After arranging the solid resin at a predetermined position, the resin can be melted by heating and fluidized. This heating may be performed in a series of steps together with the heating for curing. The resin can also be supplied using printing technology.

【００１２】封止樹脂は、通常、電子部品の外形を完全
に覆い、必要に応じて、ボンディングワイヤの全体ある
いは回路基板上の回路の一部までを覆うように供給する
ことができる。 〔第１加熱工程(b) 〕封止樹脂が供給された回路基板
を、通常の樹脂硬化用の加熱炉などに移送して加熱を行
う。The sealing resin usually covers the entire outer shape of the electronic component, and can be supplied so as to cover the entire bonding wire or a part of the circuit on the circuit board, if necessary. [First heating step (b)] The circuit board to which the sealing resin is supplied is transferred to a heating furnace or the like for curing the resin and heated.

【００１３】加熱温度として、完全硬化温度すなわち封
止樹脂が完全な硬化を起こす温度よりも低い温度が設定
される。通常の熱硬化性樹脂は、特定の温度以上に加熱
しなければ、いくら長時間の加熱を行っても、完全に硬
化することはない。このような完全硬化を起こすことの
ない温度条件が採用される。但し、完全硬化には至らな
い程度に硬化が進行することは構わない。実用的には、
その温度で４時間以内に完全な硬化が起こる温度を、完
全硬化温度として規定できる。The heating temperature is set to a temperature which is lower than a complete curing temperature, that is, a temperature at which the sealing resin completely cures. Unless a normal thermosetting resin is heated above a specific temperature, it will not be completely cured no matter how long heating is performed. Temperature conditions that do not cause such complete curing are employed. However, curing may proceed to such an extent that complete curing is not achieved. In practice,
The temperature at which complete cure occurs within 4 hours at that temperature can be defined as the complete cure temperature.

【００１４】具体的な温度条件は、封止樹脂の種類によ
って異なるが、例えば、エポキシ樹脂の場合、１５０〜
２００℃程度が完全硬化温度である。第１加熱工程にお
ける一般的な加熱条件としては、１００〜１２０℃で
０．５〜２時間の範囲で実施される。完全硬化温度より
も低い温度での加熱を行えば、封止樹脂の熱硬化は徐々
に進行するが、熱硬化に伴う熱収縮が発生しても、ごく
微量であるため、回路基板側に過剰な熱応力や歪みを発
生させることがない。この段階では、樹脂形状を決定す
るのに充分な程度には硬化が進むが、それ以上の硬化お
よび熱収縮は起こらない。また、封止樹脂中に発生する
気泡は樹脂中を容易に移動して外部に放出される。The specific temperature conditions vary depending on the type of the sealing resin.
About 200 ° C. is the complete curing temperature. As a general heating condition in the first heating step, the heating is performed at 100 to 120 ° C. for 0.5 to 2 hours. If the heating is performed at a temperature lower than the complete curing temperature, the thermal curing of the sealing resin proceeds gradually.However, even if the thermal shrinkage accompanying the thermal curing occurs, since it is extremely small, it is excessive on the circuit board side. No significant thermal stress or strain is generated. At this stage, the curing proceeds to an extent sufficient to determine the resin shape, but no further curing and heat shrinkage occurs. In addition, bubbles generated in the sealing resin easily move in the resin and are discharged to the outside.

【００１５】但し、第１加熱工程だけでは、封止樹脂は
完全な硬化状態にはなっていないので、電子部品に対す
る保護機能は十分ではない。 〔第２加熱工程(c) 〕前工程(b) である程度まで硬化が
進行した封止樹脂を、完全な硬化状態まで硬化させる。
したがって、加熱温度としては、前記した完全硬化温度
以上の温度が採用される。However, only in the first heating step, since the sealing resin is not in a completely cured state, the protection function for the electronic components is not sufficient. [Second heating step (c)] The sealing resin, which has been cured to some extent in the previous step (b), is cured to a completely cured state.
Therefore, as the heating temperature, a temperature equal to or higher than the above-described complete curing temperature is employed.

【００１６】具体的には、従来の通常の樹脂封止工程に
おける加熱条件が採用できる。一般的な加熱条件として
は、１５０〜２００℃で１〜４時間の範囲で実施され
る。第２加熱工程では、第１加熱工程である程度まで硬
化が進行した封止樹脂を完全硬化状態にするだけなの
で、熱硬化の進行に伴う熱収縮はそれほど大きくはなら
ず、回路基板側に過剰な熱応力や歪みを発生させること
はない。第１加熱工程で十分に気泡が放出されていれ
ば、第２加熱工程では気泡の発生はない。Specifically, heating conditions in a conventional ordinary resin sealing step can be adopted. As general heating conditions, the heating is performed at 150 to 200 ° C. for 1 to 4 hours. In the second heating step, the sealing resin, which has been cured to a certain extent in the first heating step, is merely brought into a completely cured state, so that the thermal shrinkage accompanying the progress of the thermal curing does not become so large, and the excess It does not generate thermal stress or strain. If bubbles are sufficiently released in the first heating step, no bubbles are generated in the second heating step.

【００１７】第２加熱工程は、第１加熱工程と同じ加熱
炉や加熱装置を用いて、温度条件の設定を変更すること
で実行することもできるし、第１加熱工程用の加熱装置
と第２加熱工程用の加熱装置とを別々に準備しておき、
回路基板を順次移送して各工程を実行することができ
る。第２加熱工程が完了すれば、封止樹脂は完全に硬化
し、電子部品が封止樹脂で封止された樹脂封止電子装置
が製造される。第１加熱工程での熱履歴に関わらず、第
２加熱工程において適切な硬化が行われれば、封止樹脂
による電子部品の保護機能は十分に発揮される。The second heating step can be carried out by changing the setting of the temperature conditions using the same heating furnace or heating apparatus as in the first heating step, or by combining the heating apparatus for the first heating step with the heating apparatus for the first heating step. 2 Prepare a heating device for the heating step separately,
Each step can be performed by sequentially transferring the circuit board. When the second heating step is completed, the sealing resin is completely cured, and a resin-sealed electronic device in which electronic components are sealed with the sealing resin is manufactured. Regardless of the heat history in the first heating step, if the appropriate curing is performed in the second heating step, the function of protecting the electronic component by the sealing resin is sufficiently exhibited.

【００１８】その後、回路基板を切断したり整形した
り、回路基板に別の電子部品を搭載したりするなど、必
要に応じて各種の加工処理を施すことができる。Thereafter, various processing can be performed as required, such as cutting or shaping the circuit board, mounting another electronic component on the circuit board, or the like.

【００１９】[0019]

【発明の実施の形態】図１に示す実施形態は、樹脂封止
電子装置の製造工程を段階的に示す。図１(a) に示すよ
うに、セラミックからなる回路基板１０の上に、接着剤
２４を介して半導体チップ２０が搭載され、半導体チッ
プ２０の端子と回路基板１０上の回路中の電極１２と
が、金線からなるボンディングワイヤ２２で電気的に接
続される。DESCRIPTION OF THE PREFERRED EMBODIMENTS The embodiment shown in FIG. 1 shows the steps of manufacturing a resin-sealed electronic device step by step. As shown in FIG. 1A, a semiconductor chip 20 is mounted on a circuit board 10 made of ceramic via an adhesive 24, and terminals of the semiconductor chip 20 and electrodes 12 in a circuit on the circuit board 10 are connected to each other. Are electrically connected by a bonding wire 22 made of a gold wire.

【００２０】図１(b) に示すように、ディスペンサ３２
から回路基板１０の上に、エポキシ樹脂などの封止樹脂
３０を吐出する。図１(c) に示すように、封止樹脂３０
は、半導体チップ２０およびボンディングワイヤ２２を
完全に覆い、回路基板１０の電極１２の大部分をも覆う
ように供給されている。封止樹脂３０は、自らの粘性あ
るいは表面張力によって、レンズ状に盛り上がった形を
なしている。As shown in FIG. 1B, the dispenser 32
To discharge a sealing resin 30 such as an epoxy resin onto the circuit board 10. As shown in FIG.
Is supplied so as to completely cover the semiconductor chip 20 and the bonding wires 22 and also cover most of the electrodes 12 of the circuit board 10. The sealing resin 30 has a bulged shape like a lens due to its own viscosity or surface tension.

【００２１】この状態で、回路基板１０を加熱装置に送
り込み、第１加熱工程および第２加熱工程を順次行う。
回路基板１０は、第１加熱工程と第２加熱工程との間で
加熱装置から取り出すことはせず、連続して処理を行
う。封止樹脂３０の硬化が完了した樹脂封止電子装置
は、回路基板１０に別の電子素子や配線を接続したり、
回路基板１０を別の電子部品に組み込んだりして使用さ
れる。In this state, the circuit board 10 is sent to the heating device, and the first heating step and the second heating step are sequentially performed.
The circuit board 10 is continuously processed without being taken out of the heating device between the first heating step and the second heating step. The resin-encapsulated electronic device in which the curing of the encapsulating resin 30 is completed can be used to connect another electronic element or wiring to the circuit board 10,
The circuit board 10 is used by being incorporated into another electronic component.

【００２２】図２に示す実施形態は、樹脂封止電子装置
の回路基板１０に、さらに別のフリップチップを実装し
ている。回路基板１０のうち、半導体チップ２０が搭載
され封止樹脂３０で封止された側とは反対側の表面に、
２個のフリップチップ４０、４０を実装する。フリップ
チップ４０は、その底面に多数の突起電極４２を有して
いる。回路基板１０の表面には、フリップチップ４０の
突起電極４２と対面する位置に、接続用の電極１４が形
成されている。In the embodiment shown in FIG. 2, another flip chip is mounted on the circuit board 10 of the resin-sealed electronic device. On the surface of the circuit board 10 opposite to the side on which the semiconductor chip 20 is mounted and sealed with the sealing resin 30,
Two flip chips 40, 40 are mounted. The flip chip 40 has many projecting electrodes 42 on the bottom surface. The connection electrode 14 is formed on the surface of the circuit board 10 at a position facing the bump electrode 42 of the flip chip 40.

【００２３】回路基板１０の上にフリップチップ４０を
配置し、各突起電極４２と接続電極１４とをハンダ接合
などで接続すれば、フリップチップ４０の実装は完了す
る。このとき、回路基板１０に反りがあると、回路基板
１０の上に載せたフリップチップ４０の各突起電極４２
が接続電極１４と確実に接触することができず隙間のあ
くところが出来てしまう。隙間があいた状態では確実な
接合は果たせず、当然、機械的な接合強度は低下し、電
気的接続性能も不良となる。The flip chip 40 is completed by disposing the flip chip 40 on the circuit board 10 and connecting each protruding electrode 42 to the connection electrode 14 by soldering or the like. At this time, if the circuit board 10 is warped, each projecting electrode 42 of the flip chip 40 mounted on the circuit board 10
Cannot reliably contact the connection electrode 14, resulting in a gap. In the state where there is a gap, reliable joining cannot be achieved, and naturally the mechanical joining strength is reduced and the electrical connection performance is also poor.

【００２４】前記した第１加熱工程および第１加熱工程
を経て、封止樹脂３０を硬化させた場合には、回路基板
１０に過大な反りが発生しないので、前記したフリップ
チップ４０の実装が良好に行える。〔実施例〕図１に示
す製造工程で樹脂封止電子装置を製造し、その性能を評
価した。When the sealing resin 30 is cured through the first heating step and the first heating step, no excessive warpage occurs on the circuit board 10, so that the mounting of the flip chip 40 is good. Can be done. EXAMPLE A resin-sealed electronic device was manufactured by the manufacturing process shown in FIG. 1 and its performance was evaluated.

【００２５】＜使用材料＞ 回路基板：低温焼成セラミック多層基板（１００×１０
０×０．６５mm） 半導体チップ：ダミーＩＣ（４．０×６．０×０．３m
m） ボンディングワイヤ：金線（２５μｍφ） 封止樹脂：エポキシ系樹脂（硬化温度１５０℃、フィラ
ーＳｉＯ2 含有） ＜製造工程＞前記した図１に示す工程を行った。封止樹
脂３０は、ディスペンサー３２を用いて、約０．２ｇを
供給した。<Materials Used> Circuit board: low-temperature fired ceramic multilayer board (100 × 10
0 × 0.65 mm) Semiconductor chip: Dummy IC (4.0 × 6.0 × 0.3 m)
m) Bonding wire: gold wire (25 μmφ) Sealing resin: epoxy resin (curing temperature 150 ° C., containing filler SiO 2 ) <Manufacturing process> The process shown in FIG. 1 was performed. About 0.2 g of the sealing resin 30 was supplied using a dispenser 32.

【００２６】第１加熱工程および第２加熱工程を、同じ
加熱炉を用いて、表１に示す条件で行った。得られた樹
脂封止電子装置の性能を下記項目について評価した。 基板の反り：回路基板の最大反り量を測定した。第１加
熱工程を行わなかった比較例１の反り量を１としたとき
の相対値で評価する。The first heating step and the second heating step were performed in the same heating furnace under the conditions shown in Table 1. The performance of the obtained resin-sealed electronic device was evaluated for the following items. Board warpage: The maximum amount of warpage of the circuit board was measured. Evaluation is made by a relative value when the amount of warpage of Comparative Example 1 in which the first heating step is not performed is set to 1.

【００２７】気泡残留率：封止樹脂の断面を拡大表示し
て観察し、測定位置３０個所のうち気泡が存在した位置
の数で評価する。 評価試験の結果を表１に示す。Bubble Residual Rate: The cross section of the sealing resin is enlarged and observed, and evaluated by the number of positions where bubbles are present among the 30 measurement positions. Table 1 shows the results of the evaluation test.

【００２８】[0028]

【表１】 ────────────────────────────────── 硬化条件 性能評価 ─────────────── ──────────── 第１加熱工程 第２加熱工程 基板の反り 気泡残留率 ────────────────────────────────── 比較例１ な し １５０℃×２hr １．００ ７／３０ 実施例１ １００℃×0.5hr １５０℃×２hr ０．８２ ０／３０ 実施例２ １００℃×２hr １５０℃×２hr ０．７７ ０／３０ 実施例３ １２０℃×0.5hr １５０℃×２hr ０．７６ ０／３０ 実施例４ １２０℃×２hr １５０℃×２hr ０．８５ ０／３０ ────────────────────────────────── 上記試験の結果、硬化工程を１度で行う従来技術に相当
する比較例１に比べて、第１加熱工程と第２加熱工程と
に分けて２段階で硬化させる各実施例では、基板の反り
が軽減され、気泡の残留も全く無くなっており、本願発
明の有用性が実証された。[Table 1] 硬化 Curing conditions Performance evaluation──────── ─────── ──────────── First heating step Second heating step Warpage of substrate Residual air bubbles ───────────────── ───────────────── Comparative Example 1 None 150 ° C × 2hr 1.00 7/30 Example 1 100 ° C × 0.5hr 150 ° C × 2hr 0.82 0/30 Example 2 100 ° C. × 2 hr 150 ° C. × 2 hr 0.77 0/30 Example 3 120 ° C. × 0.5 hr 150 ° C. × 2 hr 0.76 0/30 Example 4 120 ° C. × 2 hr 150 ° C. × 2 hr 0.85 0 / 30 従 来 As a result of the above test, conventional technology that performs the curing process once Compared with Comparative Example 1 corresponding to In each of the embodiments is divided into a thermal step and the second heating step is cured in two stages, the warpage of the substrate is reduced, and totally disappeared also residual air bubbles, the utility of the present invention was confirmed.

【００２９】[0029]

【発明の効果】本発明にかかる樹脂封止電子装置の製造
方法は、第１加熱工程(b) と第２加熱工程(c) との２段
階の加熱工程を経て封止樹脂を硬化させることで、回路
基板に過剰な変形や残留応力が生じることが防止でき
る。また、封止樹脂中に気泡が残留することが防げる。According to the method of manufacturing a resin-sealed electronic device of the present invention, the sealing resin is cured through two heating steps of a first heating step (b) and a second heating step (c). Accordingly, it is possible to prevent the circuit board from being excessively deformed and the residual stress from being generated. In addition, bubbles can be prevented from remaining in the sealing resin.

【００３０】その結果、信頼性の高い樹脂封止電子装置
を高歩留りで製造することができる。As a result, a highly reliable resin-sealed electronic device can be manufactured with a high yield.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 本発明の実施形態を表し、樹脂封止電子装置
の製造工程を段階的に示す模式的工程断面図FIG. 1 is a schematic process cross-sectional view showing a process of manufacturing a resin-sealed electronic device in a stepwise manner, according to an embodiment of the present invention.

【図２】 別の実施形態を表す断面図FIG. 2 is a cross-sectional view illustrating another embodiment.

【符号の説明】[Explanation of symbols]

１０ 回路基板 ２０ 半導体チップ ２２ ボンディングワイヤ ３０ 封止樹脂 DESCRIPTION OF SYMBOLS 10 Circuit board 20 Semiconductor chip 22 Bonding wire 30 Sealing resin

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｃ０８Ｌ 101/16 Ｃ０８Ｌ 101/00 Ｈ０１Ｌ 21/56 // Ｂ２９Ｌ 31:34 Ｆターム(参考） 4F202 AA39 AH36 AM35 CA11 CB01 CB17 CN01 CN24 4F206 AA39 AH36 AM35 JA07 JB17 JL02 JN43 4J002 CD001 DJ016 FD016 GQ05 4M109 AA01 BA03 CA05 CA21 EA02 5F061 AA01 BA03 CA05 DE06 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI theme coat ゛ (reference) C08L 101/16 C08L 101/00 H01L 21/56 // B29L 31:34 F term (reference) 4F202 AA39 AH36 AM35 CA11 CB01 CB17 CN01 CN24 4F206 AA39 AH36 AM35 JA07 JB17 JL02 JN43 4J002 CD001 DJ016 FD016 GQ05 4M109 AA01 BA03 CA05 CA21 EA02 5F061 AA01 BA03 CA05 DE06

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 回路基板上に搭載された電子部品を封止
樹脂で覆い、封止樹脂を硬化させて電子部品を封止する
樹脂封止電子装置の製造方法であって、以下の工程を含
む樹脂封止電子装置の製造方法。 (a) 前記回路基板上に搭載された前記電子部品を覆って
前記封止樹脂を供給する工程。 (b) 前工程(a) で回路基板上に供給された封止樹脂を、
完全硬化温度よりも低い温度で加熱する第１加熱工程。 (c) 前工程(b) よりも高く封止樹脂が完全硬化する温度
で加熱する第２加熱工程。1. A method of manufacturing a resin-sealed electronic device for covering an electronic component mounted on a circuit board with a sealing resin and curing the sealing resin to seal the electronic component, comprising the following steps: A method for manufacturing a resin-sealed electronic device including: (a) a step of supplying the sealing resin so as to cover the electronic component mounted on the circuit board; (b) The sealing resin supplied on the circuit board in the previous step (a) is
A first heating step of heating at a temperature lower than the complete curing temperature. (c) a second heating step of heating at a temperature higher than that of the previous step (b) so that the sealing resin is completely cured. 【請求項２】 前記第１加熱工程(b) の加熱条件が、１
００〜１２０℃で０．５〜２時間であり、 前記第２加熱工程(c) の加熱条件が、１５０〜２００℃
で１〜４時間である請求項１に記載の樹脂封止電子装置
の製造方法。2. The heating condition in the first heating step (b) is as follows.
0.5 to 2 hours at 00 to 120 ° C., and the heating condition in the second heating step (c) is 150 to 200 ° C.
The method for producing a resin-sealed electronic device according to claim 1, wherein the heating time is 1 to 4 hours. 【請求項３】 前記封止樹脂が、エポキシ系熱硬化性樹
脂である請求項１または２に記載の樹脂封止電子装置の
製造方法。3. The method according to claim 1, wherein the sealing resin is an epoxy-based thermosetting resin.
JP11108417A 1999-04-15 1999-04-15 Manufacture of resin-sealed electronic device Pending JP2000299413A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11108417A JP2000299413A (en) 1999-04-15 1999-04-15 Manufacture of resin-sealed electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11108417A JP2000299413A (en) 1999-04-15 1999-04-15 Manufacture of resin-sealed electronic device

Publications (1)

Publication Number Publication Date
JP2000299413A true JP2000299413A (en) 2000-10-24

Family

ID=14484246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11108417A Pending JP2000299413A (en) 1999-04-15 1999-04-15 Manufacture of resin-sealed electronic device

Country Status (1)

Country Link
JP (1) JP2000299413A (en)

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