JP2000252384A - Method for forming thermoplastic adhesive layer on circuit board with bump electrode - Google Patents
Method for forming thermoplastic adhesive layer on circuit board with bump electrodeInfo
- Publication number
- JP2000252384A JP2000252384A JP11051450A JP5145099A JP2000252384A JP 2000252384 A JP2000252384 A JP 2000252384A JP 11051450 A JP11051450 A JP 11051450A JP 5145099 A JP5145099 A JP 5145099A JP 2000252384 A JP2000252384 A JP 2000252384A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- film
- adhesive layer
- wiring board
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は各種電気機器に使用
する半導体パッケージ用配線材料の製造方法に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a wiring material for a semiconductor package used for various electric appliances.
【０００２】[0002]
【従来の技術】チップサイズパッケージをはじめとする
小型半導体パッケージでは、小型軽量化に有利であるこ
とから、配線材料として銅箔とポリイミドフィルムから
なる薄型配線基板がよく用いられている。2. Description of the Related Art In a small semiconductor package such as a chip size package, a thin wiring board made of a copper foil and a polyimide film is often used as a wiring material because it is advantageous for reduction in size and weight.
【０００３】例えば、この種の半導体パッケージとして
は、図２に示すように、配線基板１の一方の面に設けら
れた突起電極２を介して半導体チップ３との電気的接続
を行い、かつ接着剤層４により配線材料と半導体チップ
３の接着及び半導体チップ表面の保護を行う半導体パッ
ケージが提案されている。よって、このような半導体パ
ッケージに使用する配線材料では、突起電極側に形成さ
れた接着剤層から突起電極の先端部が露出していなくて
はならない。For example, as shown in FIG. 2, a semiconductor package of this type is electrically connected to a semiconductor chip 3 via a projecting electrode 2 provided on one surface of a wiring board 1 and is bonded. There has been proposed a semiconductor package in which an adhesive layer 4 adheres a wiring material to a semiconductor chip 3 and protects the surface of the semiconductor chip. Therefore, in the wiring material used for such a semiconductor package, the tip of the protruding electrode must be exposed from the adhesive layer formed on the protruding electrode side.
【０００４】従来、上述のような配線材料における接着
剤層は、以下に示す方法で作製されていた。接着剤層の
形成方法の一例について、図３を用いて説明する。Conventionally, an adhesive layer in the above-mentioned wiring material has been manufactured by the following method. An example of a method for forming the adhesive layer will be described with reference to FIG.
【０００５】先ず、配線基板１の突起電極２が設けられ
た側に液状接着剤（以後、単に液状接着剤と略す）６を
塗布する（図３（ａ）参照）。このとき、液状接着剤の
塗布方法は、印刷法、ドクターブレード法等の様々な方
式が用いられている。First, a liquid adhesive (hereinafter simply referred to as a liquid adhesive) 6 is applied to the side of the wiring substrate 1 on which the protruding electrodes 2 are provided (see FIG. 3A). At this time, as a method of applying the liquid adhesive, various methods such as a printing method and a doctor blade method are used.
【０００６】次に、液状接着剤６が塗布された配線基板
１を加熱し、溶剤成分を蒸発させた後、接着剤をキュア
する（図３（ｂ）参照）。ここで接着剤は配線基板１に
接着され、熱可塑性接着剤層（以後、単に接着剤層と略
す）４が配線基板１上に形成される。Next, after heating the wiring board 1 coated with the liquid adhesive 6 to evaporate the solvent component, the adhesive is cured (see FIG. 3B). Here, the adhesive is bonded to the wiring board 1, and a thermoplastic adhesive layer (hereinafter simply referred to as an adhesive layer) 4 is formed on the wiring board 1.
【０００７】上述のように接着剤層４が形成された配線
基板１において、接着剤層４から突起電極２の先端を露
出させるには、接着剤層４表面の全面をエッチング液に
接触させ、接着剤層の厚さを減少させることによって行
われており、通常は、その後、突起電極の先端部に半導
体チップとの接合性を向上させるためのAuめっき７等が
施される。In the wiring board 1 on which the adhesive layer 4 is formed as described above, in order to expose the tip of the protruding electrode 2 from the adhesive layer 4, the entire surface of the adhesive layer 4 is brought into contact with an etching solution. This is performed by reducing the thickness of the adhesive layer. Usually, thereafter, Au plating 7 or the like for improving the bonding property with the semiconductor chip is applied to the tip of the protruding electrode.
【０００８】また、図３（ａ）（ｂ）の工程に代わる別
の接着剤層形成方法として、液状接着剤を配線基板に塗
布するのではなく、液状接着剤を予め離型処理された金
属箔等へ塗布し、キュア工程まで行うことでフィルム化
したドライフィルムタイプの接着剤を用いて、ラミネー
ト法等によって加熱、加圧して、接着剤を配線基板へ貼
りつける方法もある。As another method of forming an adhesive layer instead of the steps shown in FIGS. 3A and 3B, instead of applying a liquid adhesive to a wiring board, a liquid adhesive is preliminarily released from a metal. There is also a method of applying an adhesive to a wiring substrate by applying heat and pressure by a laminating method or the like using a dry film type adhesive formed into a film by applying to a foil or the like and performing a curing process.
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、配線基
板に液状接着剤を塗布する接着剤層形成方法では、液状
樹脂を塗布した後のキュア工程において、溶剤成分の蒸
発によって膜厚が減少する際に、配線基板の突起電極側
に設けられた配線８による凹凸が接着剤層４表面にも現
れてしまい、表面が平坦で均一な接着剤層が形成されな
かったこのため、エッチングにより突起電極の先端部を
露出させる工程で、突起電極先端部のみならず配線部分
も露出してしまうといった問題があった。さらには半導
体チップと接着を行う際に、接着剤層表面に凹みがある
と、その部分では半導体チップと配線材料が接着されに
くく、接着にムラが生じやすかった。However, in the method for forming an adhesive layer for applying a liquid adhesive to a wiring substrate, in a curing step after applying a liquid resin, when a film thickness is reduced due to evaporation of a solvent component. In addition, unevenness due to the wiring 8 provided on the protruding electrode side of the wiring board also appears on the surface of the adhesive layer 4, and a uniform adhesive layer having a flat surface was not formed. In the step of exposing the portion, there is a problem that not only the tip portion of the protruding electrode but also the wiring portion is exposed. Further, when the surface of the adhesive layer has a dent when bonding with the semiconductor chip, the semiconductor chip and the wiring material are not easily bonded at that portion, and the bonding tends to be uneven.
【００１０】また、ドライフィルム化された接着剤を用
いる場合においては、接着剤がキュア工程まで進んでい
るために変形しにくく、配線間のスペースへ接着剤を埋
め込むことが難しいといった問題があった。In the case of using an adhesive formed into a dry film, there is a problem that the adhesive is hardly deformed since the adhesive has proceeded to the curing step, and it is difficult to embed the adhesive in a space between wirings. .
【００１１】本発明の課題とするところは、上記問題点
を解決し、配線パターンの凹凸によらず表面が平坦で均
一な接着剤層を形成し、化学エッチングによる突起電極
先端部を露出させる工程において、突起電極の先端部の
みを確実に露出させることができるような接着剤層形成
方法を提供するものである。An object of the present invention is to solve the above-mentioned problems, to form a uniform adhesive layer having a flat surface regardless of the unevenness of the wiring pattern, and to expose the tip of the protruding electrode by chemical etching. In the above, there is provided a method for forming an adhesive layer such that only the tip of the protruding electrode can be reliably exposed.
【００１２】[0012]
【課題を解決するための手段】上記課題を解決するた
め、本発明では、先ず予め離型処理された樹脂フィルム
あるいは金属箔からなるベースフィルムに液状接着剤を
塗布し、次に接着剤の溶剤成分を蒸発させてフィルム化
された接着剤を作製する。次に、上記フィルム化された
接着剤を配線基板に貼り合わせた後、ベースフィルムを
剥離することで、接着剤を配線基板に転写する。その
後、基板上の接着剤のキュアを行い、接着剤層を形成す
るものである。In order to solve the above problems, according to the present invention, a liquid adhesive is first applied to a base film made of a resin film or a metal foil which has been subjected to a release treatment, and then a solvent for the adhesive is applied. The components are evaporated to produce a filmed adhesive. Next, the adhesive formed into a film is attached to the wiring board, and then the base film is peeled off, so that the adhesive is transferred to the wiring board. Thereafter, the adhesive on the substrate is cured to form an adhesive layer.
【００１３】上記方法では、配線基板に貼り合わされる
接着剤がキュア工程まで進行していないため、貼り合わ
せの際に十分に変形し、転写された接着剤の表面は配線
８による凹凸を反映せず平坦となり、配線間のスペース
にも接着剤を埋め込むことが可能となる。また、液状接
着剤の溶剤成分はフィルム化される工程で蒸発させてし
まうため、キュア工程での膜厚減少がなくなり、表面が
平坦で均一な接着剤層の形成ができる。In the above method, since the adhesive to be bonded to the wiring board has not progressed to the curing step, the adhesive is sufficiently deformed at the time of bonding, and the surface of the transferred adhesive reflects irregularities due to the wiring 8. Therefore, it becomes possible to bury the adhesive in the space between the wirings. In addition, since the solvent component of the liquid adhesive is evaporated in the step of forming a film, the film thickness does not decrease in the curing step, and a uniform adhesive layer having a flat surface can be formed.
【００１４】[0014]
【発明の実施の形態】以下に本発明における接着剤層形
成方法について図１を用いて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for forming an adhesive layer according to the present invention will be described with reference to FIG.
【００１５】先ず、図１（ａ）に示すように、予め離型
処理されたベースフィルム９の離型処理面に液状接着剤
６を塗布する。液状接着剤を塗布する方法としては、配
線基板に直接液状接着剤を塗布していたときと同様の印
刷法、ドクターブレード法等の方法を使用することが可
能であり、必要とするフィルム厚によって適宜選択でき
る。また、ベースフィルム９には、ＰＥＴフィルム、Ａ
ｌ箔等が使用できるが、後工程における溶剤成分蒸発の
ための加熱、配線基板と接着剤フィルムを貼り合わせる
際の加熱温度に耐えられる材質を選択しなくてはならな
い。First, as shown in FIG. 1A, a liquid adhesive 6 is applied to a release-treated surface of a base film 9 which has been subjected to a release treatment in advance. As a method of applying the liquid adhesive, it is possible to use the same printing method as when the liquid adhesive was directly applied to the wiring board, a method such as a doctor blade method, etc., depending on the required film thickness It can be selected as appropriate. The base film 9 includes a PET film, A
1 foil or the like can be used, but it is necessary to select a material that can withstand the heating for evaporating the solvent component in the subsequent process and the heating temperature for bonding the adhesive film to the wiring board.
【００１６】次に、図１（ｂ）に示すように、ベースフ
ィルム９に塗布された液状接着剤６を加熱して、溶剤成
分を蒸発させる。このときの加熱条件は使用する接着剤
によって異なるが、接着剤をキュアさせないことが重要
である。Next, as shown in FIG. 1B, the liquid adhesive 6 applied to the base film 9 is heated to evaporate the solvent component. The heating conditions at this time vary depending on the adhesive used, but it is important not to cure the adhesive.
【００１７】次に、図１（ｃ）に示すようにフィルム化
された接着剤を配線基板１の突起電極が設けられた側に
貼り合わせる。貼り合わせる方法としては、ヒートプレ
ス法あるいはラミネート法が使用できるが、気泡の巻き
込みが起こりにくい点からラミネート法を用いる方がよ
い。Next, as shown in FIG. 1 (c), an adhesive formed into a film is bonded to the side of the wiring substrate 1 on which the protruding electrodes are provided. As a bonding method, a heat press method or a laminating method can be used, but it is better to use a laminating method because bubbles are hardly involved.
【００１８】そして最後に、図１（ｄ）に示すように、
ベースフィルム９を接着剤から剥がし、接着剤を加熱し
てキュアを行い、配線基板１上に接着剤層４を形成す
る。Finally, as shown in FIG. 1D,
The base film 9 is peeled off from the adhesive, the adhesive is heated to cure, and the adhesive layer 4 is formed on the wiring board 1.
【００１９】接着剤層４から突起電極２の先端部を露出
させるには、図１（ｅ）に示すように、従来と同様に接
着剤表面を化学エッチング液に接触させ、接着剤の厚さ
を減少させることで実現される。To expose the tip of the protruding electrode 2 from the adhesive layer 4, as shown in FIG. 1 (e), the surface of the adhesive is brought into contact with a chemical etching solution in the same manner as in the prior art, and the thickness of the adhesive is reduced. Is achieved by reducing
【００２０】[0020]
【実施例】以下の本発明による実施例について図１を用
いてさらに説明する。本実施例及び比較例において使用
した配線基板１は、幅７０ｍｍ、長さ２００ｍｍ、厚さ
５０μｍのポリイミドフィルム上に、厚さ９μｍ、幅３
５μｍの銅配線が最小スペース３５μｍで形成されてお
り、直径５０μｍ、高さ９μｍの銅の突起電極が４１４
０個形成されたものを用いた。 （実施例１）先ず、ベースフィルム９として予め離型処
理された厚さ５０μｍのＰＥＴフィルムを用い、該フィ
ルムの離型処理面に液状接着剤６として液状の熱可塑性
ポリイミド接着剤（新日鉄化学製）を塗布した（図１
（ａ）参照）。接着剤の塗布はドクターブレード法を用
いて、塗布後の膜厚が約７０μｍとなるようにした。DESCRIPTION OF THE PREFERRED EMBODIMENTS The following embodiments according to the present invention will be further described with reference to FIG. The wiring board 1 used in the present example and the comparative example has a thickness of 9 μm and a width of 3 μm on a polyimide film having a width of 70 mm, a length of 200 mm and a thickness of 50 μm.
A copper wiring of 5 μm is formed in a minimum space of 35 μm, and a copper bump electrode having a diameter of 50 μm and a height of 9 μm is provided by 414.
The one formed with 0 pieces was used. (Embodiment 1) First, a 50 μm-thick PET film pre-released was used as a base film 9, and a liquid thermoplastic polyimide adhesive (manufactured by Nippon Steel Chemical Co., Ltd.) (Fig. 1)
(See (a)). The adhesive was applied by a doctor blade method so that the film thickness after application was about 70 μm.
【００２１】次に、上記液状接着剤が塗布されたＰＥＴ
フィルムを８０℃、３０ｍｉｎの条件で加熱して、溶剤
成分を蒸発させた（図１（ｂ）参照）。このとき、加熱
後の接着剤の厚を測定した結果、ＰＥＴフィルム上に厚
さ約２０μｍの接着剤フィルムが形成されていることを
確認した。Next, PET coated with the above liquid adhesive
The film was heated at 80 ° C. for 30 minutes to evaporate the solvent component (see FIG. 1B). At this time, as a result of measuring the thickness of the adhesive after heating, it was confirmed that an adhesive film having a thickness of about 20 μm was formed on the PET film.
【００２２】次に、フィルム化された接着剤を配線基板
の突起電極２が設けられた側に、ラミネート法を用いて
貼り合わせた（図１（ｃ）参照）。ラミネートの条件
は、ロール圧力４．５ｋｇｆ／ｃｍ2、ロール温度１４
０℃で、基板の送り速度は０．１ｍ／ｍｉｎで行った。Next, the adhesive formed into a film was bonded to the side of the wiring substrate on which the protruding electrodes 2 were provided by using a laminating method (see FIG. 1C). Laminating conditions were as follows: roll pressure 4.5 kgf / cm 2 , roll temperature 14
The substrate was fed at 0 ° C. at a feed rate of 0.1 m / min.
【００２３】最後に、ＰＥＴフィルムを接着剤から剥が
し、１８０℃、３０ｍｉｎの条件でキュアを行ない、配
線基板１上に接着剤層４を形成した（図１（ｄ）参
照）。接着剤層４表面の凹凸を、レーザー変位計を用い
て測定したところ、表面の凹凸は１μｍ以下であった。Finally, the PET film was peeled off from the adhesive, and cured at 180 ° C. for 30 minutes to form an adhesive layer 4 on the wiring board 1 (see FIG. 1D). When the unevenness on the surface of the adhesive layer 4 was measured using a laser displacement meter, the unevenness on the surface was 1 μm or less.
【００２４】突起電極２の先端部の露出は、接着剤層４
表面を市販のポリイミド用エッチング液に８０℃で５ｍ
ｉｎ接触させ、接着剤の厚さを減少させることにより行
った（図１（ｅ）参照）。The tip of the protruding electrode 2 is exposed by the adhesive layer 4
The surface is 5m at 80 ° C in a commercially available etching solution for polyimide.
This was performed by making in-contact and reducing the thickness of the adhesive (see FIG. 1 (e)).
【００２５】上記工程により得られた接着剤付き配線基
板を２００倍の顕微鏡を用いて突起電極の先端部が露出
しているか観察したが、先端部が露出していない突起電
極は見られなかった。 （比較例１）配線基板１上に直接、液状の熱可塑性ポリ
イミド接着剤（新日鉄化学製）を、ドクターブレード法
を用いて塗布後の膜厚がポリイミドフィルムの上で約７
０μｍとなるように塗布し、その後、接着剤を１８０
℃、３０ｍｉｎの条件でキュアを行った以外は、実施例
１と同様の方法で突起電極の先端部の露出を行った。The wiring substrate with the adhesive obtained in the above process was observed under a microscope of 200 times to see if the tip of the protruding electrode was exposed. However, no protruding electrode having no exposed tip was found. . (Comparative Example 1) A liquid thermoplastic polyimide adhesive (manufactured by Nippon Steel Chemical Co., Ltd.) was directly applied on the wiring substrate 1 by using a doctor blade method to have a film thickness of about 7 on the polyimide film.
0 μm, and then the adhesive is applied for 180 μm.
The tip of the protruding electrode was exposed in the same manner as in Example 1 except that curing was performed at 30 ° C. for 30 minutes.
【００２６】得られた接着剤付き配線基板を２００倍の
顕微鏡を用いて突起電極の先端部が露出しているか観察
したところ、先端部が露出していない突起電極はみられ
なかったが、配線まで露出している部分があった。When the obtained wiring board with adhesive was observed under a microscope of 200 magnifications to see if the tip of the protruding electrode was exposed, no protruding electrode having the tip exposed was not found. There was a part that was exposed until.
【００２７】また、キュア後の接着剤表面の凹凸を、レ
ーザー変位計を用いて測定した結果、表面の凹凸は約１
０μｍあり、表面が平坦な接着剤層は形成できなかっ
た。 （比較例２）片面に離型処理されたＡｌ箔に液状の熱可
塑性ポリイミド接着剤（新日鉄化学製）を塗布し、１８
０℃、３０ｍｉｎの条件でキュアして、厚さ２０μｍの
接着剤ドライフィルムを作製した。Further, the unevenness of the surface of the adhesive after curing was measured using a laser displacement meter.
0 μm, and an adhesive layer having a flat surface could not be formed. (Comparative Example 2) A liquid thermoplastic polyimide adhesive (manufactured by Nippon Steel Chemical Co., Ltd.) was applied to an Al foil that had been release-treated on one side, and 18
The composition was cured at 0 ° C. for 30 minutes to prepare an adhesive dry film having a thickness of 20 μm.
【００２８】その後、接着剤ドライフィルムと配線基板
を、ロール圧力４．５ｋｇｆ／ｃｍ 2、ロール温度１６
０℃で、基板の送り速度は０．１ｍ／ｍｉｎの条件でラ
ミネート法を用いて貼り合わせた以外は実施例１と同様
の方法で突起電極の先端部の露出を行った。Then, the adhesive dry film and the wiring board
With a roll pressure of 4.5 kgf / cm Two, Roll temperature 16
At 0 ° C., the substrate feed speed was 0.1 m / min.
Same as Example 1 except that lamination was performed using the minate method
The tip of the protruding electrode was exposed by the above method.
【００２９】得られた接着剤付き配線材料を４０倍の顕
微鏡を用いて観察したところ、配線間のスペースに空隙
がみられ、良好な接着剤フィルムの貼り合わせができな
かった。When the obtained wiring material with an adhesive was observed using a microscope of 40 times magnification, voids were found in the spaces between the wirings, and good bonding of the adhesive film could not be performed.
【００３０】[0030]
【発明の効果】上記したように本発明によれば、液状接
着剤中の溶剤成分はフィルム化される工程で蒸発させて
しまうので、キュア時の膜厚減少がなくなり、配線の影
響を受けずに表面が平坦で均一な接着剤層の形成ができ
るようになる。また、接着剤はキュア工程を経ない変形
しやすい状態で配線基板との貼り合わせが行われるの
で、配線間のスペースに接着剤を確実に埋め込むことが
可能となる。このために化学エッチングによる突起電極
の露出を行う際、配線部分を露出させずに、突起電極の
先端部のみを確実に露出することができるようになる。As described above, according to the present invention, the solvent component in the liquid adhesive is evaporated during the film forming process, so that the film thickness does not decrease during curing and is not affected by wiring. Thus, an even adhesive layer having a flat surface can be formed. In addition, since the adhesive is bonded to the wiring board in a state where the adhesive is easily deformed without undergoing a curing step, the adhesive can be reliably embedded in the space between the wirings. For this reason, when exposing the projecting electrode by chemical etching, it is possible to reliably expose only the tip end of the projecting electrode without exposing the wiring portion.
【図１】図１は本発明による接着剤層形成工程を示す図
である。FIG. 1 is a view showing an adhesive layer forming step according to the present invention.
【図２】図２は突起電極を有する薄型配線基板を用いた
半導体パッケージの一例を示す図である。FIG. 2 is a diagram illustrating an example of a semiconductor package using a thin wiring substrate having a protruding electrode.
【図３】図３は従来技術による接着剤層形成工程を示す
図である。FIG. 3 is a view showing an adhesive layer forming step according to a conventional technique.
１：配線基板 ２：突起電極 ３：半導体チップ ４：接着剤層 ５：外部端子 ６：液状接着剤 ７：Ａｕメッキ ８：配線 ９：ベースフィルム 1: Wiring board 2: Protruding electrode 3: Semiconductor chip 4: Adhesive layer 5: External terminal 6: Liquid adhesive 7: Au plating 8: Wiring 9: Base film
Claims (1)
層を形成する方法であって、液状の熱可塑性接着剤を樹
脂フィルムあるいは金属箔からなるベースフィルム上へ
塗布する工程と、ベースフィルムに塗布された液状の熱
可塑性接着剤を加熱して接着剤から溶剤成分を蒸発させ
て接着剤をフィルム化する工程と、フィルム化された接
着剤を配線基板の突起電極が設けられた側に貼り合わせ
た後、ベースフィルムを接着剤から剥がすことで接着剤
を配線基板に転写する工程と、接着剤をキュアする工程
からなることを特徴とする突起電極付き配線基板への熱
可塑性接着剤層形成方法。1. A method for forming a thermoplastic adhesive layer on a wiring board with a protruding electrode, comprising: applying a liquid thermoplastic adhesive onto a base film made of a resin film or a metal foil; A step of heating the applied liquid thermoplastic adhesive to evaporate a solvent component from the adhesive to form the adhesive into a film, and applying the filmed adhesive to a side of the wiring substrate on which the protruding electrodes are provided; Forming a thermoplastic adhesive layer on the wiring board with protruding electrodes, comprising a step of transferring the adhesive to the wiring board by peeling off the base film from the adhesive after the alignment, and a step of curing the adhesive. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11051450A JP2000252384A (en) | 1999-02-26 | 1999-02-26 | Method for forming thermoplastic adhesive layer on circuit board with bump electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11051450A JP2000252384A (en) | 1999-02-26 | 1999-02-26 | Method for forming thermoplastic adhesive layer on circuit board with bump electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000252384A true JP2000252384A (en) | 2000-09-14 |
Family
ID=12887281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11051450A Pending JP2000252384A (en) | 1999-02-26 | 1999-02-26 | Method for forming thermoplastic adhesive layer on circuit board with bump electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000252384A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001168130A (en) * | 1999-12-14 | 2001-06-22 | Dainippon Printing Co Ltd | Transfer wiring member and method of production, and wiring board |
| JP2002231855A (en) * | 2001-02-05 | 2002-08-16 | Dainippon Printing Co Ltd | Csp type semiconductor device and its manufacturing method |
| WO2010103903A1 (en) * | 2009-03-12 | 2010-09-16 | 住友ベークライト株式会社 | Film for spacer formation, semiconductor wafer, and semiconductor device |
| KR101081588B1 (en) | 2010-08-03 | 2011-11-08 | 삼성전기주식회사 | Method for forming plating layer and method for manufacturing circuit board using the same |
-
1999
- 1999-02-26 JP JP11051450A patent/JP2000252384A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001168130A (en) * | 1999-12-14 | 2001-06-22 | Dainippon Printing Co Ltd | Transfer wiring member and method of production, and wiring board |
| JP4489221B2 (en) * | 1999-12-14 | 2010-06-23 | 大日本印刷株式会社 | Wiring member for transfer and manufacturing method thereof |
| JP2002231855A (en) * | 2001-02-05 | 2002-08-16 | Dainippon Printing Co Ltd | Csp type semiconductor device and its manufacturing method |
| JP4638614B2 (en) * | 2001-02-05 | 2011-02-23 | 大日本印刷株式会社 | Method for manufacturing semiconductor device |
| WO2010103903A1 (en) * | 2009-03-12 | 2010-09-16 | 住友ベークライト株式会社 | Film for spacer formation, semiconductor wafer, and semiconductor device |
| CN102341908A (en) * | 2009-03-12 | 2012-02-01 | 住友电木株式会社 | Film for spacer formation, semiconductor wafer, and semiconductor device |
| KR101081588B1 (en) | 2010-08-03 | 2011-11-08 | 삼성전기주식회사 | Method for forming plating layer and method for manufacturing circuit board using the same |
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