JP2000124570A - Printed wiring board for bonding - Google Patents

Printed wiring board for bonding

Info

Publication number
JP2000124570A
JP2000124570A JP29545398A JP29545398A JP2000124570A JP 2000124570 A JP2000124570 A JP 2000124570A JP 29545398 A JP29545398 A JP 29545398A JP 29545398 A JP29545398 A JP 29545398A JP 2000124570 A JP2000124570 A JP 2000124570A
Authority
JP
Japan
Prior art keywords
bonding
electroless
layer
plating layer
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29545398A
Other languages
Japanese (ja)
Inventor
Seiichi Serizawa
澤 精 一 芹
Masahiro Igawa
川 匡 弘 井
Takaharu Takasaki
崎 隆 治 高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON KOJUNDO KAGAKU KK
Original Assignee
NIPPON KOJUNDO KAGAKU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON KOJUNDO KAGAKU KK filed Critical NIPPON KOJUNDO KAGAKU KK
Priority to JP29545398A priority Critical patent/JP2000124570A/en
Publication of JP2000124570A publication Critical patent/JP2000124570A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve bonding and solder-joint characteristics by providing a copper foil as a base material layer on an electric insulation board of resin, ceramic, or metal, and, over it, sequentially providing an Mo-containing electroless Ni-P plating layer and an electroless gold plating layer. SOLUTION: A copper foil or a copper plating layer 2 is provided as base material layer on a printed wiring board material comprising an insulating material 1 of resin, ceramic, or various metal. The entire surface or a required part on the copper layer 2 is applied with an electroless Ni-P plating bath comprising sulfuric acid Ni.6H2O by 22.5 g/l, citric acid by 25 g/l, Na hypophosphorate by 20 g/l, lead by 0.5 ppm with Mo(molybdenum) and sulfur compound selected as additives whose quantity adjusted, so that an Mo- containing Ni-P layer 3 is formed, on which an electroless gold plating layer 4 is formed. Thus, bonding and solder-joint characteristics are improved.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電気絶縁性基板の
表面に電気設計に基づく導体パターンを導電性材料で形
成し、固着したボンディング用プリント配線板に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a printed wiring board for bonding in which a conductive pattern based on electrical design is formed on a surface of an electrically insulating substrate with a conductive material and is fixed.

【0002】[0002]

【従来の技術】プリント配線板は、プラスチック、ガラ
ス、金属などの電気絶縁膜でできた基板の上に、薄い銅
版に写真製板やスクリーン印刷で配線を印刷したプリン
ト回路を張り付け、不要の部分の銅をエッチングにより
取り除いたものである。半導体素子などの電子素子の製
作に当たり、局部的な溶接によって半導体部分から外部
電極へときわめて細かいリード線を取り付け配線される
が、これに供されるのがボンディング用プリント配線板
である。
2. Description of the Related Art A printed circuit board is made by attaching a printed circuit in which wiring is printed on a thin copper plate by photolithography or screen printing on a substrate made of an electrically insulating film such as plastic, glass, or metal. Of copper is removed by etching. When manufacturing an electronic element such as a semiconductor element, very fine lead wires are attached and wired from a semiconductor portion to an external electrode by local welding, and a printed wiring board for bonding is provided for this.

【0003】従来、ボンディング用プリント配線板は、
絶縁性基板に銅めっきでパターン形成後、下記の2通り
の方法でニッケルめっきと金めっきが施される。第1の
方法は、電気めっきによる方法である。この方法は純ニ
ッケルと純金をめっきするため、ボンディング性および
半田接合性が非常に良好である。しかし、めっきするた
めの給電用配線が必要であるために、配線回路の微細高
密度基板の製造ができないという欠点がある。
Conventionally, printed wiring boards for bonding are:
After a pattern is formed on the insulating substrate by copper plating, nickel plating and gold plating are performed by the following two methods. The first method is a method using electroplating. In this method, pure nickel and pure gold are plated, so that the bonding property and the solder bonding property are very good. However, there is a disadvantage in that a fine and high-density substrate for a wiring circuit cannot be manufactured because a power supply wiring for plating is required.

【0004】第2の方法は、無電解めっきによる配線で
ある。無電解めっきは給電用配線が不必要なため微細高
密度配線基板を製造できる。しかし、従来の無電解Ni
−Pめっきでは、ボンディング性は良好であるが、半田
接合性が悪く、特にボール半田接合では、ボール半田の
脱落不良が発生する。また無電解ニッケルめっき浴によ
る析出ニッケルめっき層は、ボンディング性や異常析出
の抑制は良好であるが、半田接合性が悪く、実用性が低
かった。
The second method is wiring by electroless plating. Since electroless plating does not require power supply wiring, a fine high-density wiring board can be manufactured. However, conventional electroless Ni
In the -P plating, the bonding property is good, but the solder bonding property is poor. Particularly, in the ball solder bonding, a dropout failure of the ball solder occurs. Further, the deposited nickel plating layer formed by the electroless nickel plating bath had good bonding properties and suppression of abnormal deposition, but had poor solder bonding properties and low practicality.

【0005】そこで、前述した第1の方法と第2の方法
の利点を活かした方法、すなわち無電解めっき方式で製
造した、ボンディング性と半田接合性の良好な半田接合
用パッドを有するプリント配線板の出現が望まれてい
る。なお、半田接合用パッドとは、半導体素子のチップ
表面に設けたワイヤボンディングのための金属薄膜部分
のことである。
In view of the above, a printed wiring board having solder bonding pads having good bonding properties and good solder bonding properties manufactured by a method utilizing the advantages of the first and second methods described above, that is, an electroless plating method. The emergence of is desired. The solder bonding pad is a metal thin film portion provided on the chip surface of the semiconductor element for wire bonding.

【0006】[0006]

【発明が解決しようとする課題】本発明は、ボンディン
グ性と半田接合性に優れた半田接合用パッド部を有する
プリント配線板を提供することを目的としている。
SUMMARY OF THE INVENTION An object of the present invention is to provide a printed wiring board having a solder bonding pad portion having excellent bonding and solder bonding properties.

【0007】[0007]

【課題を解決するための手段】本発明は、下記の通りの
ものである。 (1)樹脂、セラミックまたは金属からなる電気絶縁板
の上に下地層として銅箔または銅めっき層を有し、その
上にMo含有の無電解Ni−Pめっき層および無電解金
めっき層を順次設けたことを特徴とする、半田接合用パ
ッド部を有するボンディング用プリント配線板。 (2)無電解Ni−Pめっき層のP含有量が3〜15重
量%、Mo含有量が0.05〜10.0重量%、厚さが
0.1〜20μmであり、無電解金めっき層の厚さが
0.02〜1.5μmである前記(1)に記載の半田接
合用パッド部を有するボンディング用プリント配線板。
Means for Solving the Problems The present invention is as follows. (1) A copper foil or a copper plating layer is provided as an underlayer on an electric insulating plate made of resin, ceramic or metal, and a Mo-containing electroless Ni-P plating layer and an electroless gold plating layer are sequentially formed thereon. A printed wiring board for bonding having a pad portion for solder bonding, characterized by being provided. (2) The P content of the electroless Ni—P plating layer is 3 to 15% by weight, the Mo content is 0.05 to 10.0% by weight, the thickness is 0.1 to 20 μm, and the electroless gold plating is performed. The printed wiring board for bonding having the pad portion for solder bonding according to (1), wherein the thickness of the layer is 0.02 to 1.5 μm.

【0008】以下に、本発明を詳細に説明する。集積回
路チップの高密度化に伴い、集積回路チップを搭載する
半田接合用パッド部を有するボンディング用基板も微細
かつ高密度配線となる。このため無電解めっき方法によ
るニッケルめっき、金めっき層構造が必要であり、かつ
その物性はボンディング性、半田接合性が良好でなけれ
ばならない。また配線間の短絡などの異常析出を抑える
ことも重要なことである。
Hereinafter, the present invention will be described in detail. As the density of integrated circuit chips increases, the size of bonding substrates having solder bonding pads for mounting the integrated circuit chips also becomes finer and higher density wiring. Therefore, a nickel plating or gold plating layer structure by an electroless plating method is required, and its physical properties must be good in bonding property and solder bonding property. It is also important to suppress abnormal deposition such as a short circuit between wirings.

【0009】本発明者らは、半田接合性の劣化を防止す
るための種々の化合物を研究したところ、無電解Ni−
Pめっき浴にモリブデン化合物を微量溶かすことによ
り、ボンディング性、半田接合性、異常析出の抑制に良
好な無電解Ni−Pめっき浴が得られることを知見し
た。本発明は、この知見に基づいて完成に至った。
The inventors of the present invention have studied various compounds for preventing the deterioration of the solder bondability.
It has been found that by dissolving a trace amount of a molybdenum compound in a P plating bath, it is possible to obtain an electroless Ni-P plating bath which is excellent in bonding properties, solder bonding properties, and suppressing abnormal deposition. The present invention has been completed based on this finding.

【0010】本発明のボンディング用プリント配線板
は、図1に示すように、絶縁材1からなるプリント配線
板素材上の銅層2上の全面または必要部分にMo含有N
i−P層3および無電解金めっき層4が順次形成されて
いることを特徴としている。プリント配線板素材として
は、常用されている樹脂、セラミックス、各種金属のい
ずれも用いられる。また銅層は、電解めっき法、無電解
めっき法および蒸着法のいずれの方法を採用してもよ
い。
As shown in FIG. 1, the printed wiring board for bonding according to the present invention comprises Mo-containing N on the entire surface or a necessary portion of the copper layer 2 on the printed wiring board material made of the insulating material 1.
It is characterized in that the i-P layer 3 and the electroless gold plating layer 4 are sequentially formed. As the printed wiring board material, any of commonly used resins, ceramics and various metals is used. The copper layer may employ any of an electrolytic plating method, an electroless plating method, and a vapor deposition method.

【0011】本発明において無電解Ni−Pめっき層の
組成は、P含有量が3〜15重量%、Mo含有量が0.
05〜10.0重量%が適当である。また無電解Ni−
Pめっき層の厚さは0.1〜20μm、無電解Auめっ
き層の厚さは0.02〜1.5μmが適当である。
In the present invention, the composition of the electroless Ni-P plating layer has a P content of 3 to 15% by weight and a Mo content of 0.1%.
It is suitably from 0.5 to 10.0% by weight. Electroless Ni-
It is appropriate that the thickness of the P plating layer is 0.1 to 20 μm, and the thickness of the electroless Au plating layer is 0.02 to 1.5 μm.

【0012】[実施例]以下に、本発明を実施例と比較
例により更に説明する。実施例1〜2 絶縁基板となる標準的なビスマレイドトリアミン樹脂プ
リント板に銅めっきまたはエッチングによりパターン形
成し、その上に、表1に示す、無電解Ni−P層を5μ
m厚さでめっき後、IM−GOLD STおよびIM−
GOLD M−22(日本高純度化学株式会社製)とし
て一般に市販されている置換型無電解金めっきを用いて
厚み0.50μmの金めっきを施し、プリント配線板を
製作した。
EXAMPLES The present invention will be further described below with reference to examples and comparative examples. Examples 1 and 2 A pattern was formed on a standard bismaleide triamine resin printed board serving as an insulating substrate by copper plating or etching, and an electroless Ni-P layer shown in Table 1 having a thickness of 5 μm was formed thereon.
After plating with a thickness of m, IM-GOLD ST and IM-
Gold plating having a thickness of 0.50 μm was applied using substitution type electroless gold plating generally commercially available as GOLD M-22 (manufactured by Nippon Kojunka Kagaku Co., Ltd.) to produce a printed wiring board.

【0013】無電解Ni−Pめっき浴は、その基本組成
が、硫酸Ni・6H2O:22.5g/l、クエン酸:
25g/l、次亜リン酸Na:20g/l、鉛:0.5
ppmであり、これに添加物としてMoおよびイオウ化
合物を選び添加物の量を変化させた。めっき浴の条件は
pH4.8、液温85℃である。このようにプリント配
線板の製品を各々10個製作し、各種試料についてワイ
ヤーボンディング性評価試験、半田ボール接合性評価試
験、および析出状態観察評価試験に供した。
The basic composition of the electroless Ni-P plating bath is as follows: Ni · 6H 2 O sulfate: 22.5 g / l, citric acid:
25 g / l, sodium hypophosphite: 20 g / l, lead: 0.5
ppm, and Mo and sulfur compounds were selected as additives, and the amount of the additives was changed. The conditions of the plating bath are pH 4.8 and a liquid temperature of 85 ° C. As described above, ten products of the printed wiring board were manufactured, and various samples were subjected to a wire bonding property evaluation test, a solder ball bonding property evaluation test, and a deposition state observation evaluation test.

【0014】ワイヤーボンディング性評価試験では、ワ
イヤーボンディングマシンにて直径25μmの金線ワイ
ヤーを用いてピール強度を測定した。半田ボール接合製
評価試験については、直径0.76mmのSn−Pbが
63%:37%のボール半田を用いて、220℃、50
秒間の半田接合を2回繰り返しプッシュゲージにてボー
ル半田の接合強度を測定した。析出状態観察評価試験で
は、光学顕微鏡にて配線のハミ出しめっきなどの異常析
出を倍率200倍にて観察した。各種評価試験結果を、
表1に示す。表1の評価についてA:優れている、B:
やや優れている、C:やや劣っている、D:劣っている
を示している。
In the wire bonding evaluation test, the peel strength was measured using a gold wire having a diameter of 25 μm by a wire bonding machine. Regarding the evaluation test for solder ball bonding, Sn-Pb having a diameter of 0.76 mm and 63%: 37% ball solder was used at 220 ° C. and 50%.
The soldering for two seconds was repeated twice, and the bonding strength of the ball solder was measured with a push gauge. In the deposition state observation evaluation test, abnormal precipitation such as bleeding-out plating of wiring was observed at a magnification of 200 times with an optical microscope. Various evaluation test results
It is shown in Table 1. About the evaluation of Table 1, A: Excellent, B:
Somewhat superior, C: slightly inferior, D: inferior.

【0015】表1に示す評価試験結果から分るように、
Ni−Pめっき基本組成にMoを添加した浴(試料番号
1,2)を用いたものは、ワイヤーボンディング性、半
田ボール接合性、析出状態も良く、総合評価においても
優れている。しかし、イオウ化合物を添加した浴(試料
番号3)、およびMoもイオウ化合物も添加していない
浴(試料番号4)を用いたものは、総合評価においてや
や劣っている、あるいは劣っているとの評価しか得られ
ない。
As can be seen from the evaluation test results shown in Table 1,
Those using baths (Sample Nos. 1 and 2) in which Mo was added to the basic composition of Ni-P plating had good wire bonding properties, solder ball bonding properties, and precipitation conditions, and were also excellent in overall evaluation. However, the bath using the sulfur compound-added bath (Sample No. 3) and the bath containing neither Mo nor the sulfur compound (Sample No. 4) are slightly inferior or inferior in the overall evaluation. Only evaluation can be obtained.

【0016】[0016]

【表1】 [Table 1]

【0017】実施例3〜5 絶縁基板となる標準的なビスマレイドトリアミン樹脂プ
リント板に銅めっきまたはエッチングによりパターン形
成し、その上に、表2に示す、無電解Ni−P層を5μ
m厚さでめっき後、IM−GOLD STおよびIM−
GOLD M−22(日本高純度化学株式会社製)とし
て一般に市販されている置換型無電解金めっき液を用い
て厚み0.50μmの金めっきを施し、プリント配線板
を製作した。
Examples 3 to 5 A pattern was formed on a standard bismaleide triamine resin printed board serving as an insulating substrate by copper plating or etching, and an electroless Ni-P layer shown in Table 2 having a thickness of 5 μm was formed thereon.
After plating with a thickness of m, IM-GOLD ST and IM-
Gold plating having a thickness of 0.50 μm was performed using a substitution type electroless gold plating solution generally commercially available as GOLD M-22 (manufactured by Nippon Kojunka Kagaku Co., Ltd.) to produce a printed wiring board.

【0018】一般に市販されている無電解Ni−Pめっ
き浴(ファインニッケルN−78:日本高純度化学社
製、IPCニコロンUSD:奥野製薬社製、ニムデンS
X:上村工業社製)にMoを添加した浴と添加しない浴
を用いて無電解Ni−Pめっき層を得た。このようにし
てプリント配線板の製品を各々10個製作し、各種試料
についてワイヤーボンディング性評価試験、半田ボール
接合性評価試験、および析出状態観察評価試験に供し
た。
A commercially available electroless Ni-P plating bath (Fine Nickel N-78: manufactured by Nippon Kojunka Kagaku, IPC Nicoron USD: manufactured by Okuno Pharmaceutical Co., Ltd., Nimden S)
X: manufactured by Uemura Kogyo Co., Ltd.) and a bath to which Mo was added and a bath to which Mo was not added, to obtain an electroless Ni-P plating layer. In this way, ten printed wiring board products were manufactured, and various samples were subjected to a wire bonding property evaluation test, a solder ball bonding property evaluation test, and a deposition state observation evaluation test.

【0019】ワイヤーボンディング性評価試験ではワイ
ヤーボンディングマシンにて直径25μmの金線ワイヤ
ーを用いてピール強度を測定した。半田ボール接合性評
価試験については直径0.76mmのSn−Pbが63
%:37%のボール半田を用いて、220℃、50秒間
の半田接合を2回繰り返し、プッシュゲージにてボール
半田の接合強度を測定した。析出状態観察評価試験では
光学顕微鏡にて配線のハミ出しめっきなどの異常析出を
倍率200倍にて観察した。
In the wire bonding evaluation test, the peel strength was measured using a gold wire having a diameter of 25 μm by a wire bonding machine. Regarding the solder ball bonding test, Sn-Pb having a diameter of 0.76 mm was 63.
%: Solder bonding at 220 ° C. for 50 seconds was repeated twice using 37% ball solder, and the bonding strength of the ball solder was measured with a push gauge. In the deposition state observation evaluation test, abnormal deposition such as bleeding-out plating of wiring was observed with an optical microscope at a magnification of 200 times.

【0020】各種評価試験の結果を、表2に示す。表2
の評価基準は、前述した表1のものと同様である。表2
に示す評価試験結果から分るように、市販Ni−Pめっ
き浴にMoを添加した浴(試料番号5〜7)を用いたも
のはワイヤーボンディング性、半田ボール接合性、析出
状態も良く、総合評価においても優れている。しかし、
Moを添加しない浴(試料番号8〜10)を用いたもの
は、総合評価においてやや劣っている、あるいは劣って
いるとの評価しか得られない。
Table 2 shows the results of the various evaluation tests. Table 2
Are the same as those in Table 1 described above. Table 2
As can be seen from the evaluation test results shown in Tables 1, those using a commercial Ni-P plating bath with Mo added (sample Nos. 5 to 7) have good wire bonding properties, solder ball bonding properties, and precipitation states, and Excellent in evaluation. But,
In the case of using a bath to which Mo was not added (sample numbers 8 to 10), the overall evaluation was slightly poor or only poor.

【0021】[0021]

【表2】 [Table 2]

【0022】[0022]

【発明の効果】本発明によれば、下地無電解Ni−Pめ
っき浴にMo化合物を添加することにより優れたワイヤ
ーボンディング性、ボール半田接合性及び異常析出の抑
制効果を得られるので微細高密度配線の半田接合パッド
部を有するボンディング用プリント配線板を製作するこ
とができる。
According to the present invention, by adding an Mo compound to a base electroless Ni-P plating bath, excellent wire bonding properties, ball solder bonding properties, and an effect of suppressing abnormal deposition can be obtained, so that fine and high density can be obtained. A printed wiring board for bonding having a solder joint pad portion of wiring can be manufactured.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る半田接合用パッド部を有するボン
ディング用プリント配線板の構造断面図である。
FIG. 1 is a structural sectional view of a printed wiring board for bonding having a pad portion for solder bonding according to the present invention.

【図2】本発明に係る半田接合用パッド部を有する他の
ボンディング用プリント配線板の構造断面図である。
FIG. 2 is a structural sectional view of another printed wiring board for bonding having a pad portion for solder bonding according to the present invention.

【符号の説明】[Explanation of symbols]

1 絶縁材 2 銅層 3 Mo含有無電解Ni−Pめっき層 4 無電解金めっき層 5 金ワイヤーボンディング 6 半田ボール DESCRIPTION OF SYMBOLS 1 Insulation material 2 Copper layer 3 Mo containing electroless Ni-P plating layer 4 Electroless gold plating layer 5 Gold wire bonding 6 Solder ball

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】樹脂、セラミックスまたは金属からなる電
気絶縁基板の上に下地層として銅箔または銅めっき層を
有し、その上にMo含有の無電解Ni−Pめっき層およ
び無電解Auめっき層を順次設けたことを特徴とする、
半田接合用パッド部を有するボンディング用プリント配
線板。
1. A copper foil or copper plating layer as a base layer on an electric insulating substrate made of resin, ceramics or metal, and a Mo-containing electroless Ni-P plating layer and an electroless Au plating layer thereon Are sequentially provided,
A printed wiring board for bonding having a pad part for solder bonding.
【請求項2】無電解Ni−Pめっき層のMo含有量が、
0.05〜10.0重量%である請求項1に記載の半田
接合用パッド部を有するボンディング用プリント配線
板。
2. The Mo content of an electroless Ni—P plating layer is as follows:
The printed wiring board for bonding having a pad portion for soldering according to claim 1, wherein the content is 0.05 to 10.0% by weight.
【請求項3】無電解Ni−Pめっき層のP含有量が3〜
15重量%、Mo含有量が0.05〜10.0重量%、
厚さが0.1〜20μmであり、無電解Auめっき層の
厚さが0.02〜1.5μmである請求項1に記載の半
田接合用パッド部を有するボンディング用プリント配線
板。
3. The P content of the electroless Ni—P plating layer is 3 to 3.
15% by weight, Mo content is 0.05 to 10.0% by weight,
The printed wiring board for bonding having a pad portion for solder bonding according to claim 1, wherein the thickness is 0.1 to 20 μm, and the thickness of the electroless Au plating layer is 0.02 to 1.5 μm.
JP29545398A 1998-10-16 1998-10-16 Printed wiring board for bonding Pending JP2000124570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29545398A JP2000124570A (en) 1998-10-16 1998-10-16 Printed wiring board for bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29545398A JP2000124570A (en) 1998-10-16 1998-10-16 Printed wiring board for bonding

Publications (1)

Publication Number Publication Date
JP2000124570A true JP2000124570A (en) 2000-04-28

Family

ID=17820789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29545398A Pending JP2000124570A (en) 1998-10-16 1998-10-16 Printed wiring board for bonding

Country Status (1)

Country Link
JP (1) JP2000124570A (en)

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