JP2000076989A - Manufacture of gas discharge panel and gas discharge panel - Google Patents
Manufacture of gas discharge panel and gas discharge panelInfo
- Publication number
- JP2000076989A JP2000076989A JP24273098A JP24273098A JP2000076989A JP 2000076989 A JP2000076989 A JP 2000076989A JP 24273098 A JP24273098 A JP 24273098A JP 24273098 A JP24273098 A JP 24273098A JP 2000076989 A JP2000076989 A JP 2000076989A
- Authority
- JP
- Japan
- Prior art keywords
- protective layer
- substrate
- gas discharge
- discharge panel
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Abstract
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【発明の属する技術分野】本発明は、誘電体層と保護層
が形成された基板を用いたガス放電パネルの製造方法に
関する。The present invention relates to a method for manufacturing a gas discharge panel using a substrate on which a dielectric layer and a protective layer are formed.
【０００２】[0002]
【従来の技術】従来、この種のガス放電パネルとして
は、図５に示すＡＣ型のプラズマディスプレイパネル
（以下、ＰＤＰという）が知られている。2. Description of the Related Art Conventionally, as this kind of gas discharge panel, an AC type plasma display panel (hereinafter referred to as PDP) shown in FIG. 5 is known.
【０００３】このＰＤＰは、内表面上に複数本の電極
１，誘電体層２及び保護層３が形成されたガラス製の上
部パネル側の基板４と、電極１とは直交する向きに沿っ
て配置された複数本の電極５及び誘電体層６が内表面上
に形成され、かつ、誘電体層６上の所定位置毎には発光
領域を区画する低融点ガラス製の隔壁７が並列形成され
たガラス製の下部パネル側の基板８とを対向配置したう
えで、外周端縁を低融点ガラスからなる封着部材９でも
って封着した構成の外囲器１０を備えている。This PDP has a substrate 4 on a glass upper panel having a plurality of electrodes 1, a dielectric layer 2 and a protective layer 3 formed on an inner surface thereof, and a direction perpendicular to the electrodes 1. A plurality of arranged electrodes 5 and a dielectric layer 6 are formed on the inner surface, and a partition wall 7 made of a low-melting glass for partitioning a light-emitting region is formed in parallel at each predetermined position on the dielectric layer 6. An enclosure 10 having a configuration in which a substrate 8 on a lower panel side made of glass is disposed to face the outer periphery and a peripheral member is sealed with a sealing member 9 made of low melting point glass.
【０００４】そして、隔壁７によって区画された各発光
領域ごとの誘電体層６の上にはカラー表示を実現するた
めの蛍光体１１が塗布されており、外囲器１０内には放
電空間１２で放電を行わせるため、ネオン及びキセノン
を混合してなる放電ガスが下部パネル基板８の孔８ａと
チップ管１３を通して約５００Ｔｏｒｒの圧力で封入さ
れている。なお、封入後、図に示すようにチップ管１３
は封止されている。[0004] Phosphors 11 for realizing color display are applied on the dielectric layer 6 for each light emitting area defined by the partition walls 7, and a discharge space 12 is provided in the envelope 10. In this case, a discharge gas formed by mixing neon and xenon is sealed at a pressure of about 500 Torr through the hole 8a of the lower panel substrate 8 and the chip tube 13. After encapsulation, as shown in FIG.
Is sealed.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記ガ
ス放電パネルの放電電圧などで示される放電特性は、保
護層３の形成条件，膜質により大きく左右されており、
厳しい工程管理が必要とされていたが、それでも、ばら
つきが発生し、放電状態の安定化が困難であり、製品の
表示品位の不安定につながるものであった。However, the discharge characteristics, such as the discharge voltage of the gas discharge panel, greatly depend on the conditions for forming the protective layer 3 and the film quality.
Strict process control was required, but nevertheless, variations occurred, it was difficult to stabilize the discharge state, and this led to unstable display quality of the product.
【０００６】この原因として考えられるのは、保護層の
形成後のパネル化に至る工程までの処理や、処理前後で
の放置時間などによると考えられるが、詳細は不明であ
る。本発明は、放電特性の良好な優れた表示品位を実現
するガス放電パネルと、そのパネルを安定して製造でき
る製造方法を提供することを目的する。It is considered that the cause is considered to be the process up to the step of forming the panel after the formation of the protective layer, the leaving time before and after the process, etc., but details are unknown. An object of the present invention is to provide a gas discharge panel which realizes excellent display quality with good discharge characteristics, and a manufacturing method capable of stably manufacturing the panel.
【０００７】[0007]
【課題を解決するための手段】本発明のガス放電パネル
の製造方法は、誘電体層と保護層が形成された基板の前
記保護層を酸化させる表面改質することを特徴とする。A method of manufacturing a gas discharge panel according to the present invention is characterized in that the surface of a substrate on which a dielectric layer and a protective layer are formed is modified by oxidizing the protective layer.
【０００８】この本発明によると、放電特性の良好な優
れた表示品位を実現するガス放電パネルとそのパネルを
安定して製造できる。According to the present invention, it is possible to stably manufacture a gas discharge panel which realizes excellent display quality with good discharge characteristics and the panel.
【０００９】[0009]
【発明の実施の形態】請求項１記載のガス放電パネルの
製造方法は、誘電体層と保護層が形成された基板を用い
てガス放電パネルを製造するに際し、酸素を含む雰囲気
中において前記基板に紫外線照射を行って前記保護層の
表面改質を行うことを特徴とする。The method of manufacturing a gas discharge panel according to claim 1, wherein the method of manufacturing a gas discharge panel using a substrate on which a dielectric layer and a protective layer are formed is performed in an atmosphere containing oxygen. The surface of the protective layer is modified by irradiating the protective layer with ultraviolet rays.
【００１０】請求項２記載のガス放電パネルは、誘電体
層と保護層が形成された基板を用いたガス放電パネルに
おいて、前記基板として、酸素を含む雰囲気中において
紫外線照射を行って前記保護層の表面改質を行ったもの
を用いたことを特徴とする。The gas discharge panel according to claim 2, wherein the gas discharge panel uses a substrate on which a dielectric layer and a protective layer are formed, wherein the substrate is irradiated with ultraviolet rays in an atmosphere containing oxygen. Characterized in that a surface-modified one is used.
【００１１】請求項３記載のガス放電パネルの製造方法
は、請求項１において、酸素を含む雰囲気中において紫
外線照射しての保護層の表面改質を、減圧雰囲気で実施
すことを特徴とする。According to a third aspect of the present invention, in the method for manufacturing a gas discharge panel according to the first aspect, the surface modification of the protective layer by irradiating ultraviolet rays in an atmosphere containing oxygen is performed in a reduced pressure atmosphere. .
【００１２】請求項４記載のガス放電パネルの製造方法
は、誘電体層と保護層が形成された基板を用いてガス放
電パネルを製造するに際し、酸素を含むガスからなるプ
ラズマ中に前記基板を曝して前記保護層の表面改質を行
うことを特徴とする。According to a fourth aspect of the present invention, in manufacturing a gas discharge panel using a substrate on which a dielectric layer and a protective layer are formed, the substrate is placed in a plasma comprising a gas containing oxygen. The surface of the protective layer is modified by exposure.
【００１３】請求項５記載のガス放電パネルは、誘電体
層と保護層が形成された基板を用いたガス放電パネルに
おいて、前記基板として、酸素を含むガスからなるプラ
ズマ中に曝して前記保護層の表面改質を行ったものを用
いたことを特徴とする。The gas discharge panel according to claim 5, wherein the gas discharge panel uses a substrate on which a dielectric layer and a protective layer are formed, wherein the substrate is exposed to a plasma comprising a gas containing oxygen. Characterized in that a surface-modified one is used.
【００１４】請求項６記載のガス放電パネルの製造方法
は、誘電体層と保護層が形成された基板を用いてガス放
電パネルを製造するに際し、前記基板の保護層に酸素イ
オンの打ち込みを行って前記保護層の表面改質を行うこ
とを特徴とする。According to a sixth aspect of the present invention, in manufacturing a gas discharge panel using a substrate on which a dielectric layer and a protective layer are formed, oxygen ions are implanted into the protective layer of the substrate. And modifying the surface of the protective layer.
【００１５】請求項７記載のガス放電パネルは、誘電体
層と保護層が形成された基板を用いたガス放電パネルに
おいて、前記基板として、保護層に酸素イオンの打ち込
みを行って前記保護層の表面改質を行ったものを用いた
ことを特徴とする。According to a seventh aspect of the present invention, in the gas discharge panel using a substrate on which a dielectric layer and a protective layer are formed, the protective layer is formed by implanting oxygen ions into the protective layer. It is characterized by using a surface-modified one.
【００１６】請求項８記載のガス放電パネルの製造方法
は、請求項１，請求項３，請求項４または請求項６にお
いて、基板の保護層の表面をドライエッチング処理によ
りエッチングした後、前記保護層の表面改質を行うこと
を特徴とする。According to a eighth aspect of the present invention, in the method for manufacturing a gas discharge panel according to the first, third, fourth, or sixth aspect, the surface of the protective layer of the substrate is etched by dry etching, and then the protection is performed. It is characterized in that the surface of the layer is modified.
【００１７】請求項９記載のガス放電パネルの製造方法
は、請求項１，請求項３，請求項４，請求項６または請
求項８において、真空成膜装置で保護層を形成後、大気
解放しないで前記保護層の表面改質を行うことを特徴と
する。According to a ninth aspect of the present invention, in the method for manufacturing a gas discharge panel according to the first, third, fourth, sixth, or eighth aspect, the protective layer is formed by a vacuum film forming apparatus and then released to the atmosphere. Instead, the surface of the protective layer is modified.
【００１８】請求項１０記載のガス放電パネルの製造方
法は、請求項１，請求項３，請求項４，請求項６，請求
項８または請求項９において、保護層がアルカリ土類金
属の酸化物またはアルカリ土類金属のフッ化物あるいは
これらの混合物の膜であることを特徴とする。According to a tenth aspect of the present invention, in the method for manufacturing a gas discharge panel according to the first, third, fourth, sixth, eighth, or ninth aspect, the protective layer is formed by oxidizing an alkaline earth metal. Or a fluoride of an alkaline earth metal or a mixture thereof.
【００１９】請求項１１記載のガス放電パネルは、請求
項２，請求項５または請求項７において、保護層がアル
カリ土類金属の酸化物またはアルカリ土類金属のフッ化
物あるいはこれらの混合物の膜であることを特徴とす
る。According to a eleventh aspect of the present invention, in the gas discharge panel according to the second, fifth or seventh aspect, the protective layer is a film of an oxide of an alkaline earth metal, a fluoride of an alkaline earth metal, or a mixture thereof. It is characterized by being.
【００２０】請求項１２記載の記載のガス放電パネルの
製造方法は、誘電体層と保護層が形成された基板を用い
てガス放電パネルを製造するに際し、基板の前記保護層
の表面を酸化させる表面改質を行うことを特徴とする。According to a twelfth aspect of the present invention, in manufacturing a gas discharge panel using a substrate on which a dielectric layer and a protective layer are formed, the surface of the protective layer of the substrate is oxidized. It is characterized by performing surface modification.
【００２１】本発明により、保護層の表面改質により保
護層が膜質の安定化が図られ、保護層形成時の膜質のバ
ラツキ、パネル化に至る工程までの処理、処理前後での
放置時間等に起因するパネル化した際の放電電圧の上昇
等の放電特性の劣化を引き起こすことを防ぎ、本発明を
採用した際には、放電特性が良好なガス放電パネルを安
定して得られた。According to the present invention, the film quality of the protective layer is stabilized by modifying the surface of the protective layer, the film quality varies when the protective layer is formed, the processing up to the step of forming the panel, the standing time before and after the processing, etc. This prevents the deterioration of discharge characteristics such as an increase in discharge voltage when a panel is formed due to the above, and when the present invention is employed, a gas discharge panel having good discharge characteristics can be obtained stably.
【００２２】以下、本発明のガス放電パネルの製造方法
を具体的な各実施の形態に基づいて説明する。なお、従
来例を示す図５と同様の作用をなすものには同一の符号
を付けて説明する。Hereinafter, a method for manufacturing a gas discharge panel according to the present invention will be described based on specific embodiments. It is to be noted that components having the same functions as those in FIG.
【００２３】（実施の形態１）図１はＰＤＰの製造に使
用する基板を加工する装置を示す。基板４には、電極
１，誘電体層２，保護層３が形成されている。Embodiment 1 FIG. 1 shows an apparatus for processing a substrate used for manufacturing a PDP. An electrode 1, a dielectric layer 2, and a protective layer 3 are formed on a substrate 4.
【００２４】この基板４は、真空チャンバ１８にセット
して加工されて、加工後の基板４を使用してＰＤＰが製
造される。真空チャンバ１８には、酸素ガス導入系１
４、アルゴンガス導入系１５、真空排気系１６、３６６
ｎｍ付近の波長を主とする紫外線照射ランプ１７が具備
されており、加工を受ける基板４は、この真空チャンバ
１８内の基板加熱冷却機構およびＲＦバイアス印加機構
を有するＲＦ電極（基板ホルダ）１９に設置し、ＲＦ電
極（基板ホルダ）１９の温度を３０℃に制御し、アルゴ
ンガス導入系１５より１０００ｃｃｍのアルゴンガスと
酸素ガス導入系１４より１００ｃｃｍの酸素ガスを導入
し、真空排気系１６により真空チャンバ１８内の圧力を
３００ｍＴｏｒｒに調整する。The substrate 4 is set in the vacuum chamber 18 and processed, and a PDP is manufactured using the processed substrate 4. The oxygen chamber 1 is provided in the vacuum chamber 18.
4. Argon gas introduction system 15, evacuation system 16, 366
An ultraviolet irradiation lamp 17 mainly having a wavelength around nm is provided. The substrate 4 to be processed is attached to an RF electrode (substrate holder) 19 having a substrate heating / cooling mechanism and an RF bias applying mechanism in the vacuum chamber 18. It is installed, the temperature of the RF electrode (substrate holder) 19 is controlled to 30 ° C., an argon gas of 1000 ccm is introduced from the argon gas introduction system 15 and an oxygen gas of 100 ccm is introduced from the oxygen gas introduction system 14, and a vacuum is exhausted by the evacuation system 16. The pressure in the chamber 18 is adjusted to 300 mTorr.
【００２５】そしてＲＦ電極（基板ホルダ）１９に３Ｗ
／ｃｍ2 のＲＦパワ−を印加し、基板４の保護層３の上
にプラズマを発生させ、１５分間ドライエッチング処理
し、保護層３の表面層を約５０Åエッチング処理する。Then, 3 W is applied to the RF electrode (substrate holder) 19.
A plasma power is applied to the protective layer 3 of the substrate 4 by applying RF power of / cm 2 , dry-etching is performed for 15 minutes, and the surface layer of the protective layer 3 is etched by about 50 °.
【００２６】その後、一度、アルゴンガス、酸素ガスの
導入を停止し、残留ガスを排気した後、酸素ガス導入系
１４より３０００ｃｃｍの酸素ガスを導入し、真空排気
系１６により真空チャンバ１８内の圧力を５０Ｔｏｒｒ
に調整する。基板はＲＦ電極（基板ホルダ）１９を１５
０℃に加熱制御し保持しておく。そして紫外線照射ラン
プ１７を点灯し、５分間照射して表面改質した。Thereafter, the introduction of argon gas and oxygen gas was stopped once, the residual gas was exhausted, and then an oxygen gas of 3000 ccm was introduced from the oxygen gas introduction system 14, and the pressure in the vacuum chamber 18 was reduced by the vacuum exhaust system 16. To 50 Torr
Adjust to The substrate has 15 RF electrodes (substrate holders) 19
The heating is controlled at 0 ° C. and the temperature is kept. Then, the ultraviolet irradiation lamp 17 was turned on and irradiated for 5 minutes to perform surface modification.
【００２７】この表面改質の処理による保護層の膜改質
の詳細なプロセスは不明だが、紫外線照射により酸素分
子がオゾンとなり、保護層（ＭｇＯ）の表面付近のカ−
ボン等の吸着物および、蒸着時に巻く中に取り込まれた
カ−ボン等の含有物をＣＯ2として除去していると考え
られる。Although the detailed process of film modification of the protective layer by this surface modification treatment is unknown, oxygen molecules are converted into ozone by irradiation with ultraviolet rays, and the carol near the surface of the protective layer (MgO) is exposed.
It is considered that the adsorbed material such as carbon and the material such as carbon taken in during winding during the vapor deposition are removed as CO 2 .
【００２８】また、ＥＢ蒸着法などにより形成された保
護層（ＭｇＯ）のＭｇ／Ｏの比は１／１でなくＯに比べ
Ｍｇが多い状態で形成されているため、オゾン分子など
が表面近傍のＭｇの酸素欠損部分と結合し、保護層表面
付近はＭｇとＯがすべて結合している安定な膜面とな
り、パネル化に至るまでの後工程において保護層が吸着
や反応をしにくくなるのではないかと考えられる。Further, since the Mg / O ratio of the protective layer (MgO) formed by the EB vapor deposition method or the like is not 1/1, but is formed in a state where Mg is larger than O, ozone molecules and the like are not near the surface. And the vicinity of the surface of the protective layer becomes a stable film surface on which all of Mg and O are bonded, and it becomes difficult for the protective layer to be adsorbed or reacted in a subsequent process until panelization. It is thought that it is.
【００２９】また、吸着などにより表面付近に形成され
たＭｇＣＯ3 もオゾンにより分解されＭｇＯに変化して
いるのではないかと考えられる。また、紫外線照射ラン
プ１７による処理を実施する前に、保護層３の表面近傍
の吸着ガス等をドライエッチング処理により除去するた
め、より一層、後工程等により変化しにくい保護層３と
なっていると考えられる。It is also considered that MgCO 3 formed near the surface by adsorption or the like is decomposed by ozone and changed to MgO. In addition, before the treatment with the ultraviolet irradiation lamp 17 is performed, the adsorbed gas and the like near the surface of the protective layer 3 are removed by dry etching, so that the protective layer 3 is hardly changed by the subsequent steps and the like. it is conceivable that.
【００３０】本製造方法により従来のように高い放電電
圧や放電電圧のばらつき等の放電特性の不安定、劣化を
生じない、従来に比べ１０％程度低い安定した放電電圧
のパネルの製造を行うことができた。According to the present manufacturing method, it is possible to manufacture a panel having a stable discharge voltage which is about 10% lower than that of the conventional panel and which does not cause unstable or deteriorated discharge characteristics such as a high discharge voltage or a variation in the discharge voltage. Was completed.
【００３１】また、この実施の形態では３６６ｎｍ付近
の波長を主とする紫外線照射ランプを用いて実施した
が、３１４ｎｍ付近や４３６ｎｍ付近などの波長を主と
する紫外線照射ランプでも同様な効果が得られており、
本実施例の紫外線照射ランプに限定されるものではな
い。In this embodiment, an ultraviolet irradiation lamp mainly having a wavelength around 366 nm is used. However, a similar effect can be obtained with an ultraviolet irradiation lamp mainly having a wavelength around 314 nm or around 436 nm. And
The present invention is not limited to the ultraviolet irradiation lamp of this embodiment.
【００３２】また、保護層としてＭｇＯを用いたが、Ｍ
ｇＦや（ＭｇＯ＋ＭｇＦ）の混合層でもよく、アルカリ
土類金属の酸化物またはアルカリ土類金属のフッ化物あ
るいはこれらの混合物の膜などを使用することができ、
本実施例に限定されるものではない。Although MgO was used for the protective layer,
gF or a mixed layer of (MgO + MgF) may be used, and a film of an oxide of an alkaline earth metal, a fluoride of an alkaline earth metal, or a mixture thereof may be used.
It is not limited to this embodiment.
【００３３】（実施の形態２）図２はＰＤＰの製造に使
用する基板を加工する装置を示す。基板４には、電極
１，誘電体層２，保護層３が形成されている。(Embodiment 2) FIG. 2 shows an apparatus for processing a substrate used for manufacturing a PDP. An electrode 1, a dielectric layer 2, and a protective layer 3 are formed on a substrate 4.
【００３４】この基板４は、真空チャンバ２４にセット
して加工されて、加工後の基板４を使用してＰＤＰが製
造される。真空チャンバ２４には、アルゴンガス導入系
２０、酸素ガス導入系２１、真空排気系２２、基板加熱
冷却機構およびＲＦバイアス印加機構を具備したＲＦ電
極（基板ホルダ）２３が具備されており、加工を受ける
基板４は、この真空チャンバ２４内のＲＦ電極２３に設
置し、ＲＦ電極（基板ホルダ）２３の温度を３０℃に制
御し、アルゴンガス導入系２０より１０００ｃｃｍのア
ルゴンガスと酸素ガス導入系２１より１００ｃｃｍの酸
素ガスを導入し、真空排気系２２により真空チャンバ２
５内の圧力を３００ｍＴｏｒｒに調整する。The substrate 4 is set in the vacuum chamber 24 and processed, and a PDP is manufactured using the processed substrate 4. The vacuum chamber 24 is provided with an argon gas introduction system 20, an oxygen gas introduction system 21, an evacuation system 22, an RF electrode (substrate holder) 23 having a substrate heating / cooling mechanism and an RF bias applying mechanism. The substrate 4 to be received is placed on the RF electrode 23 in the vacuum chamber 24, the temperature of the RF electrode (substrate holder) 23 is controlled to 30 ° C., and the argon gas and oxygen gas introduction systems 21 100 ccm oxygen gas is introduced, and the vacuum chamber 2 is
Adjust the pressure in 5 to 300 mTorr.
【００３５】そしてＲＦ電極（基板ホルダ）２３に３Ｗ
／ｃｍ2 のＲＦパワ−を印加し、設置した保護層３上に
プラズマを発生させ、１５分間ドライエッチング処理
し、保護層３の表層を約５０Åエッチング処理する。Then, 3 W is applied to the RF electrode (substrate holder) 23.
RF power of / cm 2 is applied to generate plasma on the protective layer 3 provided, dry-etching is performed for 15 minutes, and the surface layer of the protective layer 3 is etched by about 50 °.
【００３６】その後、一度、アルゴンガス、酸素ガスの
導入を停止し、残留ガスを排気した後、酸素ガス導入系
２１より１０００ｃｃｍの酸素ガスを導入し、真空排気
系２２により真空チャンバ２５内の圧力を３００ｍＴｏ
ｒｒに調整する。Thereafter, the introduction of argon gas and oxygen gas is stopped once, the residual gas is exhausted, oxygen gas of 1000 ccm is introduced from the oxygen gas introduction system 21, and the pressure in the vacuum chamber 25 is reduced by the vacuum exhaust system 22. To 300mTo
Adjust to rr.
【００３７】ＲＦ電極（基板ホルダ）２３は１００℃に
加熱制御する。そしてＲＦ電極（基板ホルダ）２３に３
Ｗ／ｃｍ2のＲＦパワ−を投入し、酸素プラズマに保護
層３を曝し、２０分処理して表面改質した。The heating of the RF electrode (substrate holder) 23 is controlled to 100 ° C. Then, the RF electrode (substrate holder) 23
RF power of W / cm 2 was supplied, and the protective layer 3 was exposed to oxygen plasma, and treated for 20 minutes to modify the surface.
【００３８】この表面処理による膜改質の詳細なプロセ
スは不明だが、酸素プラズマによる処理により活性な酸
素原子、分子により保護層（ＭｇＯ）表面付近のカ−ボ
ン等の吸着物をＣＯ2 として除去していると考えられ
る。Although the detailed process of film modification by this surface treatment is unknown, the adsorbed matter such as carbon near the surface of the protective layer (MgO) is removed as CO 2 by active oxygen atoms and molecules by treatment with oxygen plasma. it seems to do.
【００３９】また、ＥＢ蒸着法等により形成された保護
層（ＭｇＯ）のＭｇ／Ｏの比は１／１でなくＯに比べＭ
ｇが多い状態で形成されているため、活性な酸素原子、
分子が表面近傍のＭｇの酸素欠損部分と結合し、保護層
表面付近はＭｇとＯがすべて結合している安定な膜面と
なり、後工程において吸着や反応をしにくくなるのでは
ないかと考えられる。Further, the Mg / O ratio of the protective layer (MgO) formed by the EB evaporation method or the like is not 1/1 but M
g is formed in a large amount, active oxygen atom,
It is considered that the molecules are bonded to the oxygen deficient portion of Mg near the surface, and the surface of the protective layer becomes a stable film surface on which all of Mg and O are bonded, which makes it difficult to adsorb or react in a later step. .
【００４０】本製造方法により従来のように高い放電電
圧や放電電圧のばらつき等の放電特性の不安定、劣化を
生じない、従来に比べ１０％程度低い安定した放電電圧
のパネルの製造を行うことができる。According to the present manufacturing method, it is possible to manufacture a panel having a stable discharge voltage which is about 10% lower than that of the conventional panel and which does not cause unstable or deteriorated discharge characteristics such as a high discharge voltage or a variation in the discharge voltage. Can be.
【００４１】また、本実施例では酸素プラズマにより保
護層３の表面改質を実施したが、図３に示すように、イ
オンガン２５を用いて保護層３に酸素イオンを打ち込み
を行うことにより、表面改質を実施してもよい。In this embodiment, the surface of the protective layer 3 is modified by oxygen plasma. However, as shown in FIG. Reforming may be performed.
【００４２】また、保護層としてＭｇＯを用いたが、Ｍ
ｇＦや（ＭｇＯ＋ＭｇＦ）の混合層でもよく、アルカリ
土類金属の酸化物またはアルカリ土類金属のフッ化物あ
るいはこれらの混合物の膜などを使用することができ、
本実施例に限定されるものではない。Although MgO was used as the protective layer,
gF or a mixed layer of (MgO + MgF) may be used, and a film of an oxide of an alkaline earth metal, a fluoride of an alkaline earth metal, or a mixture thereof may be used.
It is not limited to this embodiment.
【００４３】（実施の形態３）図４は本実施の形態に係
る保護層の形成と表面改質に関する装置の処理工程を示
す。(Embodiment 3) FIG. 4 shows processing steps of an apparatus relating to formation of a protective layer and surface modification according to the present embodiment.
【００４４】従来では、保護層３としてのＭｇＯ膜はＥ
Ｂ蒸着装置などの真空成膜装置で形成され、真空装置か
ら大気中に出され、次工程に送られる。のが一般的であ
るが、本実施例において、図４（ａ）に示すインライン
型の装置では、電極１と誘電体層２が形成された基板を
ロ−ドロック室２６に投入し、基板加熱室２７、基板加
熱＋バッファ−室２８で基板加熱を実施した後、蒸着室
２９で保護層が形成される。保護層３が形成された後、
真空状態を破らずにエッチング室３０に送られドライエ
ッチング処理により保護層３の表面を約５０Åエッチン
グし、次の表面改質室３１で先に記した発明の（実施の
形態１）または（実施の形態２）の表面処理が実施さ
れ、その後、基板冷却＋バッファ室３２で冷却された
後、アンロ−ドロック室３３から取り出される。Conventionally, the MgO film as the protective layer 3 is made of E
It is formed by a vacuum film-forming device such as a B vapor deposition device, is discharged from the vacuum device to the atmosphere, and is sent to the next step. Generally, in this embodiment, in the in-line type apparatus shown in FIG. 4A, the substrate on which the electrode 1 and the dielectric layer 2 are formed is loaded into the load lock chamber 26, and the substrate is heated. After the substrate is heated in the chamber 27 and the substrate heating + buffer-chamber 28, a protective layer is formed in the vapor deposition chamber 29. After the protective layer 3 is formed,
It is sent to the etching chamber 30 without breaking the vacuum state, and the surface of the protective layer 3 is etched by about 50 ° by the dry etching process, and the next embodiment (first embodiment) or (embodiment) After the surface treatment of the form 2) is performed, the substrate is cooled in the substrate cooling + buffer chamber 32 and then taken out of the unload lock chamber 33.
【００４５】また、図４（ｂ）に示すように枚葉型で
は、ロ−ドロック２６から投入された基板は、移載室３
４を経由して、基板加熱室２７，基板加熱＋バッファ−
室２８，蒸着室２９，エッチング室３０，表面改質室３
１，基板冷却室３２へ矢印で示すように順に送られて処
理され、アンロ−ドロック室３３から取り出される。As shown in FIG. 4B, in the single wafer type, the substrate loaded from the load lock 26 is transferred to the transfer chamber 3.
4, the substrate heating chamber 27, substrate heating + buffer-
Chamber 28, vapor deposition chamber 29, etching chamber 30, surface reforming chamber 3
1, are sequentially sent to the substrate cooling chamber 32 as shown by the arrows, processed, and taken out of the unload lock chamber 33.
【００４６】本実施例の形態により保護層を形成した
後、大気解放せずに表面改質の処理が実施されるため、
大気解放した時に生じるガス吸着などの発生が防げ、成
膜時に膜中に取り込まれる不純物や、成膜装置内のガス
による吸着だけになるため、表面改質処理の効果がより
一層大きくなる。After forming the protective layer according to the embodiment, the surface modification treatment is performed without releasing the protective layer to the atmosphere.
Since the occurrence of gas adsorption and the like that occur when the film is released to the atmosphere can be prevented, and only adsorption by impurities taken into the film at the time of film formation or gas in the film forming apparatus is performed, the effect of the surface modification treatment is further enhanced.
【００４７】本製造方法により従来のように高い放電電
圧や放電電圧のばらつき等の放電特性の不安定、劣化を
生じない、従来に比べ１３％程度低い安定した放電電圧
のパネルの製造を行うことができた。According to the present manufacturing method, it is possible to manufacture a panel having a stable discharge voltage which is about 13% lower than that of the conventional panel and which does not cause unstable or deteriorated discharge characteristics such as a high discharge voltage or a variation in the discharge voltage. Was completed.
【００４８】また、本実施例において保護層としてＭｇ
Ｏを用いたが、ＭｇＦやＭｇＯ＋ＭｇＦの混合層などで
もよく、アルカリ土類金属の酸化物またはアルカリ土類
金属のフッ化物あるいはこれらの混合物の膜などを使用
することができ、本実施例に限定されるものではない。In this embodiment, the protective layer is made of Mg.
Although O was used, a mixed layer of MgF or MgO + MgF may be used, and a film of an oxide of an alkaline earth metal, a fluoride of an alkaline earth metal, or a mixture thereof can be used. It is not something to be done.
【００４９】[0049]
【発明の効果】以上のように本発明によれば、保護層の
表面改質を行うことで、保護層形成時の膜質のバラツ
キ、パネル化までの後工程の処理、処理前後での放置時
間による影響を受けにくい安定な膜質とするために、パ
ネル化した際の放電特性の良好なガス放電パネルが実現
でき、また、厳しい工程管理を必要としない安易な製造
工程で、表示特性の良好なガス放電パネルの安定した製
造を実現できる。As described above, according to the present invention, by modifying the surface of the protective layer, variations in film quality at the time of formation of the protective layer, post-process processing until panelization, and standing time before and after the processing are achieved. In order to obtain a stable film quality that is not easily affected by gas, a gas discharge panel with good discharge characteristics when panelized can be realized, and in a simple manufacturing process that does not require strict process control, good display characteristics are obtained. Stable production of gas discharge panels can be realized.
【図１】本発明の（実施の形態１）の製造工程において
保護層の表面改質を実行する装置の概略断面図FIG. 1 is a schematic cross-sectional view of an apparatus for performing surface modification of a protective layer in a manufacturing process according to a first embodiment of the present invention.
【図２】本発明の（実施の形態２）の製造工程において
保護層の表面改質を実行する装置の概略断面図FIG. 2 is a schematic cross-sectional view of an apparatus for performing surface modification of a protective layer in a manufacturing process according to a second embodiment of the present invention.
【図３】本発明の製造工程において保護層の表面改質を
実行する装置の別の実施の形態の概略断面図FIG. 3 is a schematic cross-sectional view of another embodiment of an apparatus for performing surface modification of a protective layer in a manufacturing process of the present invention.
【図４】本発明の（実施の形態３）の保護層形成と表面
改質を実施するインライン型装置と枚葉型装置の処理工
程を示す概略断面図FIG. 4 is a schematic cross-sectional view showing processing steps of an in-line apparatus and a single-wafer apparatus for forming a protective layer and modifying a surface according to (Embodiment 3) of the present invention.
【図５】従来のＰＤＰの破断斜視図FIG. 5 is a cutaway perspective view of a conventional PDP.
１ 電極 ２ 誘電体層 ３ 保護層 ４ 基板 ５ 電極 ６ 誘電体層 ７ 隔壁 ８ 基板 ８ａ 孔 ９ 封着部材 １０ 外囲器 １１ 蛍光体 １２ 放電空間 １３ チップ管 １４ 酸素ガス導入系 １５ アルゴンガス導入系 １６ 真空空排気系 １７ 紫外線照射ランプ １８ 真空チャンバ １９ ＲＦ電極（基板ホルダ） ２０ アルゴンガス導入系 ２１ 酸素ガス導入系 ２２ 真空排気系 ２３ ＲＦ電極（基板ホルダ） ２４ 真空チャンバ ２５ イオンガン ２６ ロ−ドロック室 ２７ 基板加熱室 ２８ 基板加熱＋バッファ室 ２９ 蒸着室 ３０ エッチング室 ３１ 表面改質室 ３２ 基板冷却＋バッファ室 ３３ アンロ−ドロック室 ３４ 移載室 Reference Signs List 1 electrode 2 dielectric layer 3 protective layer 4 substrate 5 electrode 6 dielectric layer 7 partition 8 substrate 8a hole 9 sealing member 10 envelope 11 fluorescent substance 12 discharge space 13 chip tube 14 oxygen gas introduction system 15 argon gas introduction system Reference Signs List 16 vacuum air exhaust system 17 ultraviolet irradiation lamp 18 vacuum chamber 19 RF electrode (substrate holder) 20 argon gas introduction system 21 oxygen gas introduction system 22 vacuum exhaust system 23 RF electrode (substrate holder) 24 vacuum chamber 25 ion gun 26 load lock chamber 27 Substrate heating chamber 28 Substrate heating + buffer chamber 29 Deposition chamber 30 Etching chamber 31 Surface reforming chamber 32 Substrate cooling + buffer chamber 33 Unload lock chamber 34 Transfer chamber
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高田 祐助 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 東野 秀隆 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 大谷 光弘 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 5C027 AA05 5C040 AA02 AA04 DD11 5C094 AA03 AA42 AA43 AA55 BA31 BA32 CA19 DA13 DA15 FB02 FB15 GB10 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yusuke Takada 1006 Kazuma Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. 72) Inventor Mitsuhiro Otani 1006 Kazuma Kadoma, Kadoma City, Osaka Prefecture F-term in Matsushita Electric Industrial Co., Ltd. (reference)
Claims (12)
てガス放電パネルを製造するに際し、酸素を含む雰囲気
中において前記基板に紫外線照射を行って前記保護層の
表面改質を行うガス放電パネルの製造方法。In producing a gas discharge panel using a substrate on which a dielectric layer and a protective layer are formed, the surface of the protective layer is modified by irradiating the substrate with ultraviolet rays in an atmosphere containing oxygen. Manufacturing method of gas discharge panel.
たガス放電パネルにおいて、前記基板として、酸素を含
む雰囲気中において紫外線照射を行って前記保護層の表
面改質を行ったものを用いたガス放電パネル。2. A gas discharge panel using a substrate on which a dielectric layer and a protective layer are formed, wherein the substrate is subjected to ultraviolet irradiation in an atmosphere containing oxygen to modify the surface of the protective layer. Gas discharge panel using.
ての保護層の表面改質を、減圧雰囲気で実施する請求項
１記載のガス放電パネルの製造方法。3. The method for manufacturing a gas discharge panel according to claim 1, wherein the surface modification of the protective layer by irradiating ultraviolet rays in an atmosphere containing oxygen is performed in a reduced pressure atmosphere.
てガス放電パネルを製造するに際し、酸素を含むガスか
らなるプラズマ中に前記基板を曝して前記保護層の表面
改質を行うガス放電パネルの製造方法。4. When manufacturing a gas discharge panel using a substrate on which a dielectric layer and a protective layer are formed, the surface of the protective layer is modified by exposing the substrate to a plasma comprising a gas containing oxygen. Manufacturing method of gas discharge panel.
たガス放電パネルにおいて、前記基板として、酸素を含
むガスからなるプラズマ中に曝して前記保護層の表面改
質を行ったものを用いたガス放電パネル。5. A gas discharge panel using a substrate on which a dielectric layer and a protective layer are formed, wherein the substrate has been subjected to surface modification of the protective layer by being exposed to a plasma comprising a gas containing oxygen. Gas discharge panel using.
てガス放電パネルを製造するに際し、前記基板の保護層
に酸素イオンの打ち込みを行って前記保護層の表面改質
を行うガス放電パネルの製造方法。6. A gas for producing a gas discharge panel using a substrate on which a dielectric layer and a protective layer are formed, by implanting oxygen ions into the protective layer of the substrate to modify the surface of the protective layer. A method for manufacturing a discharge panel.
たガス放電パネルにおいて、前記基板として、保護層に
酸素イオンの打ち込みを行って前記保護層の表面改質を
行ったものを用いたガス放電パネル。7. A gas discharge panel using a substrate on which a dielectric layer and a protective layer are formed, wherein the substrate obtained by implanting oxygen ions into the protective layer and modifying the surface of the protective layer is used. Gas discharge panel used.
理によりエッチングした後、前記保護層の表面改質を行
う請求項１，請求項３，請求項４または請求項６の何れ
かに記載のガス放電パネルの製造方法。8. The method according to claim 1, wherein after modifying the surface of the protective layer of the substrate by dry etching, the surface of the protective layer is modified. Manufacturing method of gas discharge panel.
しないで前記保護層の表面改質を行う請求項１，請求項
３，請求項４，請求項６または請求項８の何れかに記載
のガス放電パネルの製造方法。9. The method according to claim 1, wherein after forming the protective layer by a vacuum film forming apparatus, the surface of the protective layer is modified without releasing to the atmosphere. A method for producing a gas discharge panel according to any one of the above.
たはアルカリ土類金属のフッ化物あるいはこれらの混合
物の膜であることを特徴とする請求項１，請求項３，請
求項４，請求項６，請求項８または請求項９の何れかに
記載のガス放電パネルの製造方法。10. The method according to claim 1, wherein the protective layer is a film of an oxide of an alkaline earth metal, a fluoride of an alkaline earth metal, or a mixture thereof. A method for manufacturing a gas discharge panel according to any one of claims 6, 8, and 9.
たはアルカリ土類金属のフッ化物あるいはこれらの混合
物の膜であることを特徴とする請求項２，請求項５また
は請求項７の何れかに記載のガス放電パネル。11. The method according to claim 2, wherein the protective layer is a film of an oxide of an alkaline earth metal, a fluoride of an alkaline earth metal, or a mixture thereof. A gas discharge panel according to any one of the above.
いてガス放電パネルを製造するに際し、基板の前記保護
層の表面を酸化させる表面改質を行うことを特徴とする
ガス放電パネル。12. A gas discharge panel, wherein when a gas discharge panel is manufactured using a substrate on which a dielectric layer and a protective layer are formed, a surface modification for oxidizing a surface of the protective layer of the substrate is performed. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24273098A JP3444793B2 (en) | 1998-08-28 | 1998-08-28 | Method of manufacturing gas discharge panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24273098A JP3444793B2 (en) | 1998-08-28 | 1998-08-28 | Method of manufacturing gas discharge panel |
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| Publication Number | Publication Date |
|---|---|
| JP2000076989A true JP2000076989A (en) | 2000-03-14 |
| JP3444793B2 JP3444793B2 (en) | 2003-09-08 |
Family
ID=17093404
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|---|---|---|---|
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| Country | Link |
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| JP2001319572A (en) * | 2000-05-02 | 2001-11-16 | Ulvac Japan Ltd | Vacuum treatment room, manufacturing equipment for plasma display device and manufacturing method thereof |
| WO2004049375A1 (en) * | 2002-11-22 | 2004-06-10 | Matsushita Electric Industrial Co., Ltd. | Plasma display panel and method for manufacturing same |
| JP2005019391A (en) * | 2003-05-30 | 2005-01-20 | Pioneer Plasma Display Corp | Vapor deposition material, manufacturing method of plasma display panel using the same, and manufacturing method of plasma display device |
| KR100468441B1 (en) * | 2001-07-10 | 2005-01-27 | 파이오니아 플라즈마 디스플레이 가부시키가이샤 | Method for forming a dielectric film |
| JP2006260992A (en) * | 2005-03-17 | 2006-09-28 | Ube Material Industries Ltd | Reforming method for magnesium oxide thin film |
| WO2006109719A1 (en) * | 2005-04-08 | 2006-10-19 | Matsushita Electric Industrial Co., Ltd. | Plasma display panel and method for manufacturing same |
| KR100711512B1 (en) * | 2005-11-01 | 2007-04-27 | 엘지전자 주식회사 | Plasma display panel with protective layer ease of electron emission and manufacturing methods thereof |
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