JP2000029230A - Method for removing resist material - Google Patents
Method for removing resist materialInfo
- Publication number
- JP2000029230A JP2000029230A JP19299498A JP19299498A JP2000029230A JP 2000029230 A JP2000029230 A JP 2000029230A JP 19299498 A JP19299498 A JP 19299498A JP 19299498 A JP19299498 A JP 19299498A JP 2000029230 A JP2000029230 A JP 2000029230A
- Authority
- JP
- Japan
- Prior art keywords
- resist material
- article
- adhesive sheet
- resist
- free energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体、回路、各
種プリント基板、液晶パネルなどの製造における微細パ
タ―ンを形成する工程において、半導体ウエハなどの物
品上の不要となつたレジスト材を除去する方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a process for forming a fine pattern in the production of semiconductors, circuits, various printed boards, liquid crystal panels, etc., in which unnecessary resist materials on articles such as semiconductor wafers are removed. On how to do it.
【0002】[0002]
【従来の技術】LSIの高密度化、高集積化、また液晶
パネルの高密度化、大画面化が進むにつれ、半導体ウエ
ハやガラス基板に存在するレジスト材を簡便かつ確実に
除去することは、製品の歩留り、信頼性を確保するうえ
で、非常に重要である。従来、レジスト材の除去工程で
は、アツシヤ―(灰化処理装置)によるドライ除去や、
レジスト除去用溶剤によるウエツト除去が一般的であ
る。2. Description of the Related Art As LSI densities and integrations have increased, and liquid crystal panels have increased densities and screen sizes, it has become necessary to easily and reliably remove resist materials present on semiconductor wafers and glass substrates. It is very important to ensure product yield and reliability. Conventionally, in the process of removing the resist material, dry removal using an asher (ashing device)
Wet removal with a resist removal solvent is common.
【0003】しかしながら、アツシヤ―による除去で
は、高ド―ズイオン打ち込み後のレジスト材の除去に長
時間を要したり、プラズマアツシングの場合、プラズマ
を用いることによる基板へのダメ―ジが問題となる。ま
た、レジスト除去用溶剤によるウエツト除去では、作業
環境の悪化、廃液処理などの地球環境問題や、いつたん
除去されたレジスト材がウエハへ再付着するなどの問題
がある。[0003] However, in the removal by the ashes, it takes a long time to remove the resist material after the high dose ion implantation, and in the case of the plasma assing, the damage to the substrate due to the use of the plasma is problematic. Become. In addition, the removal of the wet by the solvent for removing the resist has problems such as deterioration of the working environment, global environmental problems such as waste liquid treatment, and the resist material once removed is reattached to the wafer.
【0004】これらの問題を解決するため、シ―ト状や
テ―プ状などの粘着シ―ト類によるレジスト材の除去方
法が提案されている。これは、レジスト材が存在する物
品上に粘着シ―ト類を貼り付け、レジスト材を粘着剤層
に固着させたのち、この粘着シ―ト類とレジスト材とを
一体に剥離して、レジスト材を物品上から除去するもの
である。この方式によると、アツシヤ―や溶剤による従
来方式のような問題点がなく、結果として製品の歩留り
の向上にも寄与する。In order to solve these problems, there has been proposed a method of removing a resist material by using an adhesive sheet such as a sheet or a tape. In this method, an adhesive sheet is attached to an article on which a resist material is present, the resist material is fixed to an adhesive layer, and then the adhesive sheet and the resist material are peeled off integrally. The material is removed from the article. According to this method, there is no problem as in the conventional method using an asher or a solvent, and as a result, the yield of the product is also improved.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、上記の
粘着シ―ト類による除去方式では、レジスト材への処理
によつては、半導体ウエハなどの物品上からレジスト材
を完全に剥離除去できない場合があつた。とくに、1×
1015ions/cm2 以上という高ド―ズ量でイオン打
ち込みを行つたレジスト材では、剥離が困難な場合が多
い。However, in the above-described removal method using an adhesive sheet, there is a case where the resist material cannot be completely peeled off from an article such as a semiconductor wafer depending on the treatment of the resist material. Atsuta. Especially 1 ×
It is often difficult to peel off a resist material that has been ion-implanted with a high dose of 10 15 ions / cm 2 or more.
【0006】本発明は、このような事情に照らし、半導
体ウエハなどの物品上の不要となつたレジスト材を粘着
シ―ト類を用いて剥離除去する方法において、上記レジ
スト材の剥離性を高め、レジスト材の処理状態によらず
確実に除去することができるレジスト材の除去方法を提
供することを目的としている。SUMMARY OF THE INVENTION In view of such circumstances, the present invention provides a method for removing unnecessary resist material on an article such as a semiconductor wafer by using an adhesive sheet to enhance the peelability of the resist material. It is another object of the present invention to provide a method for removing a resist material that can be reliably removed regardless of the processing state of the resist material.
【0007】[0007]
【課題を解決するための手段】本発明者らは、上記の目
的を達成するため、鋭意検討した結果、レジスト材を半
導体ウエハなどの物品上に設ける前に、この物品上に特
定の表面処理を施し、その表面自由エネルギ―を一定値
以下に設定しておくと、この上に設けられるレジスト材
の剥離性が高められ、粘着シ―ト類の貼り付けおよび剥
離操作により、レジスト材の処理状態によらず確実に除
去でき、剥離の信頼性を飛躍的に向上できることを見い
出し、本発明を完成するに至つた。Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above object, and as a result, before providing a resist material on an article such as a semiconductor wafer, a specific surface treatment was performed on the article. When the surface free energy is set to a certain value or less, the releasability of the resist material provided thereon is enhanced, and the processing of the resist material is performed by sticking and peeling of the adhesive sheet. The present inventors have found that they can be reliably removed irrespective of the state, and that the reliability of peeling can be greatly improved, and the present invention has been completed.
【0008】すなわち、本発明は、物品上に存在するレ
ジスト材の上面に、粘着シ―ト類を貼り付け、この粘着
シ―ト類とレジスト材とを一体に剥離して、物品上のレ
ジスト材を除去する方法において、物品上にレジスト材
を設ける前に、物品上にその表面自由エネルギ―を60
dyne/cm以下にする表面処理を施しておくことを特徴と
するレジスト材の除去方法(請求項1)に係るものであ
る。また、本発明は、物品上への上記表面処理により、
物品表面の水の接触角を40゜以上にする上記構成のレ
ジスト材の除去方法(請求項2)に係るものである。That is, according to the present invention, an adhesive sheet is adhered to an upper surface of a resist material present on an article, and the adhesive sheet and the resist material are peeled off integrally to form a resist on the article. In the method of removing material, the surface free energy of the material is reduced by 60% before the resist material is provided on the material.
The present invention relates to a method for removing a resist material, wherein a surface treatment for making dyne / cm or less is performed. In addition, the present invention, by the surface treatment on the article,
According to a second aspect of the present invention, there is provided a method for removing a resist material having a contact angle of water of 40 ° or more on an article surface.
【0009】なお、本明細書において、物品の表面自由
エネルギ―とは、物品表面に対して水およびヨウ化メチ
レンを用いてそれぞれ接触角を測定し、この測定値と接
触角測定液体の表面自由エネルギ―値(文献より既知)
を、Youngの式および拡張Fowkesの式から導
かれる下記の式1に代入し、得られるふたつの式を連立
一次方程式として解くことにより、求められる固体の表
面自由エネルギ―値を意味するものである。 <式1> (1+cosθ)γl =2√(γS d γl d )+2√
(γS P γl P ) ただし、式中の各記号は、それぞれ以下のとおりであ
る。 θ:接触角 γl :接触角測定液体の表面自由エネルギ― γl d :γl における分散力成分 γl P :γl における極性力成分 γS d :固体(物品)の表面自由エネルギ―における分
散力成分 γS P :固体(物品)の表面自由エネルギ―における極
性力成分In the present specification, the surface free energy of an article is defined as the contact angle of the article surface measured with water and methylene iodide. Energy value (known from literature)
Is substituted into the following equation 1 derived from the Young's equation and the extended Fowkes equation, and the resulting two equations are solved as simultaneous linear equations, thereby obtaining the surface free energy value of the solid. . <Equation 1> (1 + cos θ) γ l = 2 {(γ S d γ l d ) +2}
(Γ S P γ l P) wherein each symbol in the formula is as follows. theta: contact angle gamma l: surface free energy of the contact angle measurement liquid - γ l d: γ dispersion force component in l gamma l P: polar force component in γ l γ S d: surface free energy of the solid (product) - in Dispersion force component γ S P : Polar force component in surface free energy of solid (article)
【0010】[0010]
【発明の実施の形態】本発明は、半導体ウエハなどの物
品上にレジスト材を設けるにあたり、上記物品のレジス
ト材を設ける面にあらかじめ表面処理を施して、その表
面自由エネルギ―を60dyne/cm以下、好ましくは50
〜30dyne/cmの範囲に設定することを特徴とする。ま
た、この表面処理により物品表面の水の接触角が40゜
以上、とくに55〜80゜の範囲となるようにするのが
望ましい。このような表面処理を施したときには、この
上に設けられるレジスト材の密着性が適度に弱められ、
後工程での粘着シ―ト類による剥離性に好結果がもたら
される。DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the present invention, when a resist material is provided on an article such as a semiconductor wafer, the surface of the article on which the resist material is provided is subjected to a surface treatment in advance, and the surface free energy is reduced to 60 dyne / cm or less. , Preferably 50
It is characterized in that it is set in a range of up to 30 dyne / cm. In addition, it is desirable that the surface treatment be such that the contact angle of water on the surface of the article is 40 ° or more, particularly 55 to 80 °. When such a surface treatment is performed, the adhesiveness of the resist material provided thereon is appropriately weakened,
Good results are obtained in the releasability of the adhesive sheet in a later step.
【0011】上記の表面処理は、化学的手法、物理的手
法またはこれらの組み合わせなど、いかなる手法によつ
てもよい。一例として、半導体ウエハなどの物品をヘキ
サメチルジシラザンなどの有機シリコン化合物の蒸気に
暴露したのち加熱処理する、疎水化処理方法があり、こ
の方法において、上記の暴露時間などを調整することに
より、物品の表面自由エネルギ―、さらには物品表面の
水の接触角を前記範囲に設定する。上記調整が不十分と
なつて、表面自由エネルギ―などを前記範囲に設定でき
ないと、レジスト材の剥離性に好結果が得られない。The above-mentioned surface treatment may be performed by any method such as a chemical method, a physical method or a combination thereof. As an example, there is a hydrophobic treatment method in which an article such as a semiconductor wafer is exposed to a vapor of an organosilicon compound such as hexamethyldisilazane and then heated, and in this method, by adjusting the above-described exposure time and the like, The surface free energy of the article and the contact angle of water on the article surface are set within the above range. If the surface free energy and the like cannot be set within the above range due to insufficient adjustment, good results cannot be obtained in the peelability of the resist material.
【0012】このように物品を表面処理したのち、この
上に公知のレジスト材を塗布し、通常のフオトプロセス
により、所定のレジストパタ―ン(レジスト膜画像)を
形成し、このレジスト材をマスクとして、たとえば開口
部にAs+ 、P+ 、B+ などのイオン注入、その他エツ
チングなどの種々の処理を施し、最後に、不要となつた
レジスト材(レジスト膜画像)を除去して、回路を形成
する。After the surface treatment of the article as described above, a known resist material is applied thereon, and a predetermined resist pattern (resist film image) is formed by an ordinary photo process, and the resist material is used as a mask. For example, the openings are subjected to various processes such as ion implantation of As + , P + , and B + , and other processes such as etching, and finally, unnecessary resist material (resist film image) is removed to form a circuit. I do.
【0013】ここで、レジスト材の除去は、その上面に
粘着シ―ト類を貼り付け、この粘着シ―ト類とレジスト
材とを一体に剥離する方法により、行われる。上記の粘
着シ―ト類は、ポリエステル、ポリカ―ボネ―ト、ポリ
エチレン、ポリプロピレン、エチレン−プロピレン共重
合体、エチレン−酢酸ビニル共重合体、エチレン−エチ
ルアクリレ―ト共重合体などからなる厚さが通常10〜
1,000μmのフイルムを基材とし、このフイルム基
材上に厚さが通常20μm以上の粘着剤層を設けて、シ
―ト状やテ―プ状などの形態としたものである。Here, the resist material is removed by a method in which an adhesive sheet is adhered to the upper surface and the adhesive sheet and the resist material are integrally peeled off. The above-mentioned adhesive sheets have a thickness of polyester, polycarbonate, polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer and the like. Usually 10
A 1,000 μm film is used as a base material, and a pressure-sensitive adhesive layer having a thickness of usually 20 μm or more is provided on the film base material to form a sheet or tape.
【0014】粘着剤層は、非硬化型のものであつてもよ
いが、レジスト材をきれいに剥離するため、硬化型のも
のが好ましい。硬化型の粘着剤層には、ホツトメルト系
粘着剤のような加熱状態からの冷却により硬化(固化)
する粘着剤や、アクリル系ポリマ―などの粘着性ポリマ
―に硬化性化合物および重合触媒を含ませた重合硬化型
の粘着剤などが用いられる。これらの中でも、とくに重
合硬化型の粘着剤、とりわけ紫外線硬化型の粘着剤を用
いるのが望ましい。The pressure-sensitive adhesive layer may be of a non-curable type, but is preferably of a curable type in order to cleanly remove the resist material. The curable pressure-sensitive adhesive layer is cured (solidified) by cooling from a heated state such as a hot-melt pressure-sensitive adhesive
For example, a pressure-sensitive adhesive such as an acrylic polymer or a polymerization-curable pressure-sensitive adhesive obtained by adding a curable compound and a polymerization catalyst to an adhesive polymer such as an acrylic polymer is used. Among these, it is particularly desirable to use a polymerization-curable pressure-sensitive adhesive, particularly an ultraviolet-curable pressure-sensitive adhesive.
【0015】上記の剥離操作により、レジスト材は、粘
着シ―ト類と一体となつて、物品上から除去される。そ
の際、物品の表面自由エネルギ―が前記範囲に設定され
て、物品とレジスト材との密着性が適度に弱められてい
ることから、レジスト材の処理状態に関係なく、たとえ
ば、レジスト材がイオン注入などにより変質して固い表
面層などを形成していても、このレジスト材が物品上に
残存する心配はなく、上記剥離操作により、確実に除去
することができる。By the above-mentioned peeling operation, the resist material is removed from the article together with the adhesive sheets. At that time, since the surface free energy of the article is set in the above range and the adhesion between the article and the resist material is appropriately weakened, for example, the resist material may be ionized regardless of the processing state of the resist material. Even if a hard surface layer or the like is formed due to deterioration due to injection or the like, there is no concern that the resist material remains on the article, and the resist material can be reliably removed by the above-described peeling operation.
【0016】なお、本発明は、半導体のデバイス製造の
例に限定されず、レジスト材からなるパタ―ンが存在す
る物品であれば、なんらその用途は限定されず、種々の
物品に適用できるものであることは言うまでもない。The present invention is not limited to the example of semiconductor device manufacturing, and is not limited to any application as long as it is an article having a pattern made of a resist material, and can be applied to various articles. Needless to say,
【0017】[0017]
【実施例】つぎに、本発明の実施例を記載して、より具
体的に説明する。なお、以下、部とあるのは重量部を意
味するものとする。Next, an embodiment of the present invention will be described in more detail. Hereinafter, “parts” means “parts by weight”.
【0018】実施例1 表面にCVD(Chemical Vapor Dep
osition)法により厚さが10nmの酸化膜を形
成したシリコンウエハを、ヘキサメチルジシラザンの蒸
気中に、80℃で5分間暴露したのち、乾燥空気中18
0℃で90秒間加熱処理した。このシリコンウエハの表
面自由エネルギ―は40.6dyne/cm、水の接触角は6
5.0゜であつた。このシリコンウエハ上に厚さが1μ
mのネガ型レジスト材を塗布し、加熱、露光、現象を行
い、レジスト膜画像を形成したのち、これをマスクにし
てイオン注入エネルギ―80keV、イオン注入濃度1
×1016ions/cm2 でP+ イオンを注入した。Example 1 A CVD (Chemical Vapor Depth) was formed on the surface.
A silicon wafer on which an oxide film having a thickness of 10 nm is formed by an oxidation method is exposed to vapor of hexamethyldisilazane at 80 ° C. for 5 minutes and then dried in dry air.
Heat treatment was performed at 0 ° C. for 90 seconds. The surface free energy of this silicon wafer is 40.6 dyne / cm and the contact angle of water is 6
It was 5.0 °. The thickness of 1μ on this silicon wafer
After applying a negative resist material, heating, exposing, and developing a resist film image, using this as a mask, ion implantation energy of 80 keV and ion implantation concentration of 1 are used.
P + ions were implanted at × 10 16 ions / cm 2 .
【0019】このようにして作製したシリコンウエハの
上に、紫外線硬化型粘着シ―トを、130℃の加熱板上
で圧着して貼り付けた。その後、高圧水銀ランプによ
り、紫外線を900mJ/cm2 の照射量で照射して、硬
化処理したのち、粘着シ―トを剥離操作して、粘着シ―
トとレジスト材(レジスト膜画像)とを一体に剥離除去
した。シリコンウエハの表面を顕微鏡観察したところ、
ウエハ上のレジスト材は完全に除去されていることが確
認された。An ultraviolet-curable pressure-sensitive adhesive sheet was bonded on the silicon wafer thus prepared by pressing it on a heating plate at 130 ° C. After that, ultraviolet rays were irradiated by a high-pressure mercury lamp at an irradiation amount of 900 mJ / cm 2 , and after curing treatment, the adhesive sheet was peeled off to obtain an adhesive sheet.
And the resist material (resist film image) were integrally peeled and removed. When the surface of the silicon wafer was observed under a microscope,
It was confirmed that the resist material on the wafer was completely removed.
【0020】なお、上記の紫外線硬化型粘着シ―トは、
下記の方法で作製したものである。まず、アクリル酸n
−ブチル80部、アクリル酸エチル15部、アクリル酸
5部からなるモノマ―混合物を、酢酸エチル150部、
アゾビスイソブチロニトリル0.1部を用いて、窒素気
流以下、60℃で12時間溶液重合を行い、重量平均分
子量が50万のアクリル系ポリマ―溶液を得た。The above-mentioned UV-curable adhesive sheet is
It was produced by the following method. First, acrylic acid n
-A monomer mixture consisting of 80 parts of butyl, 15 parts of ethyl acrylate and 5 parts of acrylic acid, 150 parts of ethyl acetate,
Using 0.1 part of azobisisobutyronitrile, solution polymerization was performed at 60 ° C. for 12 hours under a nitrogen stream to obtain an acrylic polymer solution having a weight average molecular weight of 500,000.
【0021】この溶液に、アクリル系ポリマ―100部
に対して、硬化性化合物としてポリエチレングリコ―ル
ジアクリレ―ト50部、ウレタンアクリレ―ト〔新中村
化学(株)製の商品名「U−N−01」〕50部、多官
能性化合物としてポリイソシアネ―ト化合物〔日本ポリ
ウレタン工業(株)製の商品名「コロネ―トL」〕3
部、光重合開始剤として〔ジメトキシ(フエニル)〕メ
チルフエニルケトン3部を、均一に混合して、紫外線硬
化型の粘着剤溶液を調製した。In this solution, based on 100 parts of the acrylic polymer, 50 parts of polyethylene glycol diacrylate as a curable compound, urethane acrylate [trade name "UN" manufactured by Shin-Nakamura Chemical Co., Ltd. -01 "] 50 parts, a polyisocyanate compound as a polyfunctional compound [trade name" Coronate L "manufactured by Nippon Polyurethane Industry Co., Ltd.] 3
Parts, and 3 parts of [dimethoxy (phenyl)] methylphenylketone as a photopolymerization initiator were uniformly mixed to prepare an ultraviolet-curable pressure-sensitive adhesive solution.
【0022】つぎに、この粘着剤溶液を、厚さが50μ
mのポリエステルフイルムからなる基材上に、乾燥後の
厚さが35μmとなるように塗布し、130℃で3分間
乾燥して、紫外線硬化型粘着シ―トを作製した。この粘
着シ―トの紫外線硬化前のシリコンウエハに対する18
0°剥離接着力は10g/10mm幅であり、紫外線硬化
後の同剥離接着力は13g/10mm幅であつた。Next, the pressure-sensitive adhesive solution was applied to a thickness of 50 μm.
m was coated on a base material made of a polyester film having a thickness of 35 μm after drying, and dried at 130 ° C. for 3 minutes to produce an ultraviolet-curable pressure-sensitive adhesive sheet. 18 with respect to the silicon wafer of this adhesive sheet before ultraviolet curing.
The 0 ° peel adhesive strength was 10 g / 10 mm width, and the peel adhesive strength after ultraviolet curing was 13 g / 10 mm width.
【0023】実施例2 表面にCVD法により厚さが10nmの酸化膜を形成し
たシリコンウエハを、ヘキサメチルジシラザンの蒸気中
に、80℃で2分間暴露したのち、乾燥空気中180℃
で90秒間加熱処理した。このシリコンウエハの表面自
由エネルギ―は44.3dyne/cm、水の接触角は60.
1゜であつた。このシリコンウエハ上に、実施例1と同
様にして、レジスト膜画像を形成したのち、これをマス
クにして実施例1と同様の条件でイオン注入を行つた。Example 2 A silicon wafer having an oxide film having a thickness of 10 nm formed on its surface by a CVD method was exposed to steam of hexamethyldisilazane at 80 ° C. for 2 minutes, and then dried at 180 ° C. in dry air.
For 90 seconds. The surface free energy of this silicon wafer is 44.3 dyne / cm, and the contact angle of water is 60.
It was 1 ゜. After a resist film image was formed on this silicon wafer in the same manner as in Example 1, ions were implanted under the same conditions as in Example 1 using this as a mask.
【0024】このようにして作製したシリコンウエハの
上に、実施例1と同様にして、紫外線硬化型粘着シ―ト
を貼り付け、実施例1と同様の硬化処理を施したのち、
粘着シ―トを剥離操作して、粘着シ―トとレジスト材
(レジスト膜画像)とを一体に剥離除去した。シリコン
ウエハの表面を顕微鏡観察したところ、ウエハ上のレジ
スト材は完全に除去されていることが確認された。On the silicon wafer thus produced, an ultraviolet-curable pressure-sensitive adhesive sheet was attached in the same manner as in Example 1, and the same curing treatment as in Example 1 was performed.
The adhesive sheet was peeled off, and the adhesive sheet and the resist material (resist film image) were integrally peeled and removed. Microscopic observation of the surface of the silicon wafer confirmed that the resist material on the wafer was completely removed.
【0025】比較例1 表面にCVD法により厚さが10nmの酸化膜を形成し
たシリコンウエハを、ヘキサメチルジシラザンの蒸気中
に、80℃で10秒間暴露したのち、乾燥空気中180
℃で90秒間加熱処理した。このシリコンウエハの表面
自由エネルギ―は61.8dyne/cm、水の接触角は3
6.1゜であつた。このシリコンウエハ上に、実施例1
と同様にして、レジスト膜画像を形成したのち、これを
マスクにして実施例1と同様の条件でイオン注入を行つ
た。COMPARATIVE EXAMPLE 1 A silicon wafer having an oxide film having a thickness of 10 nm formed on its surface by a CVD method was exposed to steam of hexamethyldisilazane at 80 ° C. for 10 seconds, and then dried in dry air for 180 seconds.
C. for 90 seconds. The surface free energy of this silicon wafer is 61.8 dyne / cm, and the contact angle of water is 3
It was 6.16. Example 1 on this silicon wafer
After a resist film image was formed in the same manner as in the above, ion implantation was performed under the same conditions as in Example 1 using this as a mask.
【0026】このようにして作製したシリコンウエハの
上に、実施例1と同様にして、紫外線硬化型粘着シ―ト
を貼り付け、実施例1と同様の硬化処理を施したのち、
粘着シ―トを剥離操作して、粘着シ―トとレジスト材
(レジスト膜画像)とを一体に剥離除去した。シリコン
ウエハの表面を顕微鏡観察した結果、ウエハ上のレジス
ト材は大部分除去されているものの、わずかなレジスト
残り(30μm□程度)が認められ、十分に満足できる
ものとはいえなかつた。On the silicon wafer thus produced, an ultraviolet-curable adhesive sheet was attached in the same manner as in Example 1, and the same curing treatment as in Example 1 was performed.
The adhesive sheet was peeled off, and the adhesive sheet and the resist material (resist film image) were integrally peeled and removed. As a result of microscopic observation of the surface of the silicon wafer, most of the resist material on the wafer was removed, but a slight resist residue (about 30 μm square) was recognized, which was not sufficiently satisfactory.
【0027】[0027]
【発明の効果】以上のように、本発明においては、物品
上のレジスト材を粘着シ―ト類を用いて剥離除去する方
法において、レジスト材を半導体ウエハなどの物品上に
設ける前に、この物品上に特定の表面処理を施して、そ
の表面自由エネルギ―を一定値以下に設定する構成とし
たことにより、この上に設けられるレジスト材の剥離性
が高められ、レジスト材の処理状態に関係なく、確実に
剥離除去できる、工業的に有用なレジスト材の除去方法
を提供することができる。As described above, according to the present invention, in a method of peeling and removing a resist material on an article using an adhesive sheet, the resist material is provided on an article such as a semiconductor wafer. By applying a specific surface treatment to the article and setting the surface free energy to a certain value or less, the releasability of the resist material provided thereon is enhanced, and the treatment is not related to the processing state of the resist material. Thus, it is possible to provide an industrially useful method for removing a resist material which can be reliably removed by stripping.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 桶結 卓司 大阪府茨木市下穂積1丁目1番2号 日東 電工株式会社内 Fターム(参考) 2H096 AA25 AA26 AA27 CA01 LA06 LA16 5F046 MA19 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Takuji Okeyi 1-2-1, Shimohozumi, Ibaraki-shi, Osaka Nitto Denko Corporation F-term (reference) 2H096 AA25 AA26 AA27 CA01 LA06 LA16 5F046 MA19
Claims (2)
粘着シ―ト類を貼り付け、この粘着シ―ト類とレジスト
材とを一体に剥離して、物品上のレジスト材を除去する
方法において、物品上にレジスト材を設ける前に、物品
上にその表面自由エネルギ―を60dyne/cm以下にする
表面処理を施しておくことを特徴とするレジスト材の除
去方法。Claims: 1. An upper surface of a resist material present on an article,
In a method of attaching an adhesive sheet and peeling the adhesive sheet and the resist material together to remove the resist material on the article, before providing the resist material on the article, A method for removing a resist material, wherein a surface treatment is performed to reduce the surface free energy to 60 dyne / cm or less.
水の接触角を40゜以上にする請求項1に記載のレジス
ト材の除去方法。2. The method for removing a resist material according to claim 1, wherein the surface treatment on the article makes the contact angle of water on the article surface 40 ° or more.
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19299498A JP2000029230A (en) | 1998-07-08 | 1998-07-08 | Method for removing resist material |
AT99113172T ATE235072T1 (en) | 1998-07-08 | 1999-07-07 | METHOD FOR DECOATING A RESIST MATERIAL |
EP99113172A EP0971270B1 (en) | 1998-07-08 | 1999-07-07 | Process for the removal of resist material |
DE69905985T DE69905985T2 (en) | 1998-07-08 | 1999-07-07 | Process for stripping a resist material |
ES99113172T ES2191387T3 (en) | 1998-07-08 | 1999-07-07 | PROCEDURE FOR THE ELIMINATION OF A PROTECTIVE COAT. |
AT02008596T ATE418750T1 (en) | 1998-07-08 | 1999-07-07 | METHOD FOR DECOATING RESIST MATERIAL |
DE69940168T DE69940168D1 (en) | 1998-07-08 | 1999-07-07 | Method for stripping resist material |
EP02008596A EP1248156B1 (en) | 1998-07-08 | 1999-07-07 | Process for the removal of resist material |
US09/348,834 US6245188B1 (en) | 1998-07-08 | 1999-07-08 | Process for the removal of resist material |
TW88111571A TW429399B (en) | 1998-01-16 | 1999-07-08 | Process for the removal of resist material |
US09/833,812 US6565704B2 (en) | 1998-07-08 | 2001-04-13 | Process for the removal of resist material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19299498A JP2000029230A (en) | 1998-07-08 | 1998-07-08 | Method for removing resist material |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2000029230A true JP2000029230A (en) | 2000-01-28 |
Family
ID=16300464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19299498A Pending JP2000029230A (en) | 1998-01-16 | 1998-07-08 | Method for removing resist material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2000029230A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005354112A (en) * | 2005-08-24 | 2005-12-22 | Nitto Denko Corp | Carrier component with cleaning facility, and cleaning method for substrate processing apparatus using the carrier component |
JP2010040930A (en) * | 2008-08-07 | 2010-02-18 | Fujikura Ltd | Etching method |
JP2015216234A (en) * | 2014-05-09 | 2015-12-03 | 株式会社ディスコ | Etching method |
-
1998
- 1998-07-08 JP JP19299498A patent/JP2000029230A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005354112A (en) * | 2005-08-24 | 2005-12-22 | Nitto Denko Corp | Carrier component with cleaning facility, and cleaning method for substrate processing apparatus using the carrier component |
JP2010040930A (en) * | 2008-08-07 | 2010-02-18 | Fujikura Ltd | Etching method |
JP2015216234A (en) * | 2014-05-09 | 2015-12-03 | 株式会社ディスコ | Etching method |
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