JP2000022165A5 - - Google Patents

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Publication number: JP2000022165A5
Authority: JP; Japan
Prior art keywords: film; region; amorphous silicon; substrate; semiconductor
Prior art date: 1998-07-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

JP1998192116A

Other languages

English (en)

Japanese (ja)

Other versions

JP2000022165A (ja

Filing date

1998-07-07

Publication date

2005-12-02

1998-07-07 Application filed filed Critical

1998-07-07 Priority to JP19211698A priority Critical patent/JP2000022165A/ja

1998-07-07 Priority claimed from JP19211698A external-priority patent/JP2000022165A/ja

1999-07-02 Priority to US09/347,820 priority patent/US6555422B1/en

2000-01-21 Publication of JP2000022165A publication Critical patent/JP2000022165A/ja

2005-12-02 Publication of JP2000022165A5 publication Critical patent/JP2000022165A5/ja

Status Withdrawn legal-status Critical Current

Links

239000010408 film Substances 0.000 description 197
239000004065 semiconductor Substances 0.000 description 60
239000010410 layer Substances 0.000 description 54
239000000758 substrate Substances 0.000 description 48
229910021417 amorphous silicon Inorganic materials 0.000 description 47
238000000034 method Methods 0.000 description 43
239000012535 impurity Substances 0.000 description 32
239000011159 matrix material Substances 0.000 description 29
238000004519 manufacturing process Methods 0.000 description 26
229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
239000010409 thin film Substances 0.000 description 20
150000002500 ions Chemical group 0.000 description 15
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
238000000137 annealing Methods 0.000 description 14
238000010586 diagram Methods 0.000 description 14
239000011229 interlayer Substances 0.000 description 14
239000004973 liquid crystal related substance Substances 0.000 description 14
239000000463 material Substances 0.000 description 13
230000015572 biosynthetic process Effects 0.000 description 10
239000011347 resin Substances 0.000 description 9
229920005989 resin Polymers 0.000 description 9
239000011521 glass Substances 0.000 description 8
230000001678 irradiating effect Effects 0.000 description 8
229920001721 polyimide Polymers 0.000 description 7
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
239000004642 Polyimide Substances 0.000 description 6
230000001133 acceleration Effects 0.000 description 6
229910052782 aluminium Inorganic materials 0.000 description 6
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
239000008151 electrolyte solution Substances 0.000 description 6
238000005530 etching Methods 0.000 description 6
239000012528 membrane Substances 0.000 description 6
230000003287 optical effect Effects 0.000 description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
239000010407 anodic oxide Substances 0.000 description 5
238000007743 anodising Methods 0.000 description 5
230000004888 barrier function Effects 0.000 description 5
229910052710 silicon Inorganic materials 0.000 description 5
239000010703 silicon Substances 0.000 description 5
229910052814 silicon oxide Inorganic materials 0.000 description 5
229910052715 tantalum Inorganic materials 0.000 description 5
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
229910052796 boron Inorganic materials 0.000 description 4
238000002425 crystallisation Methods 0.000 description 4
230000008025 crystallization Effects 0.000 description 4
230000000694 effects Effects 0.000 description 4
FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 3
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
239000007789 gas Substances 0.000 description 3
239000001257 hydrogen Substances 0.000 description 3
229910052739 hydrogen Inorganic materials 0.000 description 3
230000003647 oxidation Effects 0.000 description 3
238000007254 oxidation reaction Methods 0.000 description 3
229910052698 phosphorus Inorganic materials 0.000 description 3
239000011574 phosphorus Substances 0.000 description 3
239000000243 solution Substances 0.000 description 3
DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
101100441092 Danio rerio crlf3 gene Proteins 0.000 description 2
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
229910052581 Si3N4 Inorganic materials 0.000 description 2
229910003070 TaOx Inorganic materials 0.000 description 2
FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
239000002253 acid Substances 0.000 description 2
NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
230000002411 adverse Effects 0.000 description 2
150000001408 amides Chemical class 0.000 description 2
229910052785 arsenic Inorganic materials 0.000 description 2
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
229910052733 gallium Inorganic materials 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
238000005224 laser annealing Methods 0.000 description 2
BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
238000000059 patterning Methods 0.000 description 2
239000010453 quartz Substances 0.000 description 2
239000000523 sample Substances 0.000 description 2
229910052706 scandium Inorganic materials 0.000 description 2
SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
229910001936 tantalum oxide Inorganic materials 0.000 description 2
235000002906 tartaric acid Nutrition 0.000 description 2
239000011975 tartaric acid Substances 0.000 description 2
238000002230 thermal chemical vapour deposition Methods 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
239000004988 Nematic liquid crystal Substances 0.000 description 1
229910004298 SiO 2 Inorganic materials 0.000 description 1
229910000577 Silicon-germanium Inorganic materials 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
-1 argon ion Chemical class 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
239000011651 chromium Substances 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000009826 distribution Methods 0.000 description 1
238000005108 dry cleaning Methods 0.000 description 1
238000001312 dry etching Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
229910052731 fluorine Inorganic materials 0.000 description 1
239000011737 fluorine Substances 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
238000005259 measurement Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000010355 oscillation Effects 0.000 description 1
235000006408 oxalic acid Nutrition 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
230000003071 parasitic effect Effects 0.000 description 1
239000012466 permeate Substances 0.000 description 1
239000000049 pigment Substances 0.000 description 1
238000005268 plasma chemical vapour deposition Methods 0.000 description 1
239000000047 product Substances 0.000 description 1
230000001737 promoting effect Effects 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
239000000565 sealant Substances 0.000 description 1
239000003566 sealing material Substances 0.000 description 1
125000006850 spacer group Chemical group 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
239000004094 surface-active agent Substances 0.000 description 1
229940095064 tartrate Drugs 0.000 description 1
238000005979 thermal decomposition reaction Methods 0.000 description 1
239000010936 titanium Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1

JP19211698A 1998-07-07 1998-07-07 薄膜トランジスタおよびその作製方法 Withdrawn JP2000022165A (ja)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
JP19211698A JP2000022165A (ja)	1998-07-07	1998-07-07	薄膜トランジスタおよびその作製方法
US09/347,820 US6555422B1 (en)	1998-07-07	1999-07-02	Thin film transistor and method of manufacturing the same

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP19211698A JP2000022165A (ja)	1998-07-07	1998-07-07	薄膜トランジスタおよびその作製方法

Publications (2)

Publication Number	Publication Date
JP2000022165A JP2000022165A (ja)	2000-01-21
JP2000022165A5 true JP2000022165A5 (fr)	2005-12-02

Family

ID=16285944

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP19211698A Withdrawn JP2000022165A (ja)	1998-07-07	1998-07-07	薄膜トランジスタおよびその作製方法

Country Status (1)

Country	Link
JP (1)	JP2000022165A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW575866B (en) *	2002-06-05	2004-02-11	Hitachi Ltd	Display device with active-matrix transistor and method for manufacturing the same
TWI378307B (en) *	2002-08-19	2012-12-01	Univ Columbia	Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
JP5517832B2 (ja) *	2010-08-20	2014-06-11	住友重機械工業株式会社	レーザアニール装置及びレーザアニール方法

1998
- 1998-07-07 JP JP19211698A patent/JP2000022165A/ja not_active Withdrawn

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