IT9048606A0 - Rele' di sovraccarico a stato solido con livello di scatto compensato in temperatura. - Google Patents

Rele' di sovraccarico a stato solido con livello di scatto compensato in temperatura.

Info

Publication number
IT9048606A0
IT9048606A0 IT9048606A IT4860690A IT9048606A0 IT 9048606 A0 IT9048606 A0 IT 9048606A0 IT 9048606 A IT9048606 A IT 9048606A IT 4860690 A IT4860690 A IT 4860690A IT 9048606 A0 IT9048606 A0 IT 9048606A0
Authority
IT
Italy
Prior art keywords
solid state
temperature compensated
overload relay
trip level
state overload
Prior art date
Application number
IT9048606A
Other languages
English (en)
Other versions
IT1242190B (it
IT9048606A1 (it
Inventor
Ciro Guajardo
Original Assignee
Teledyne Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teledyne Ind filed Critical Teledyne Ind
Publication of IT9048606A0 publication Critical patent/IT9048606A0/it
Publication of IT9048606A1 publication Critical patent/IT9048606A1/it
Application granted granted Critical
Publication of IT1242190B publication Critical patent/IT1242190B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor
IT48606A 1990-04-30 1990-12-21 Rele' di sovraccarico a stato solido con livello di scatto compensato in temperatura. IT1242190B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/516,430 US5006949A (en) 1990-04-30 1990-04-30 Temperature compensated overload trip level solid state relay

Publications (3)

Publication Number Publication Date
IT9048606A0 true IT9048606A0 (it) 1990-12-21
IT9048606A1 IT9048606A1 (it) 1991-11-01
IT1242190B IT1242190B (it) 1994-02-16

Family

ID=24055556

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48606A IT1242190B (it) 1990-04-30 1990-12-21 Rele' di sovraccarico a stato solido con livello di scatto compensato in temperatura.

Country Status (6)

Country Link
US (1) US5006949A (it)
JP (1) JP2735394B2 (it)
DE (1) DE4041032C2 (it)
FR (1) FR2661574B1 (it)
GB (1) GB2243732B (it)
IT (1) IT1242190B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69311921T2 (de) * 1992-02-03 1998-01-29 Philips Electronics Nv Anordnung zum Ein- und Ausschalten eines Leistungstransistors
JP2807388B2 (ja) * 1993-03-19 1998-10-08 株式会社東芝 フォトカプラ装置
EP0687067A3 (en) * 1994-06-06 1997-11-19 Eaton Corporation Short circuit protector for an isolated power MOSFET output stage
DE19612216A1 (de) * 1996-03-27 1997-10-02 Siemens Ag Elektronisches Abzweigschaltgerät
DE19633367A1 (de) * 1996-08-19 1998-03-26 Siemens Ag Ansteuerschaltung für ein Feldeffekt gesteuertes Halbleiterbauelement
US6307726B1 (en) * 1998-10-02 2001-10-23 Texas Instruments Incorporated System to control the output current with temperature through a controllable current limiting circuit
TW457767B (en) 1999-09-27 2001-10-01 Matsushita Electric Works Ltd Photo response semiconductor switch having short circuit load protection
EP1182776A3 (de) * 2000-08-18 2005-07-06 Tyco Electronics AMP GmbH Ansteuerschaltung für zumindest einen Leistungs-Halbleiterschalter
US6833590B2 (en) * 2001-01-11 2004-12-21 Renesas Technology Corp. Semiconductor device
JP2002208644A (ja) * 2001-01-11 2002-07-26 Mitsubishi Electric Corp 半導体装置
US7262948B2 (en) * 2005-12-02 2007-08-28 Tellabs Operations, Inc. Power switch with simple overload protection
JP2007228447A (ja) * 2006-02-27 2007-09-06 Hitachi Ltd スイッチング素子のゲート駆動回路
DE102009051735B3 (de) * 2009-11-03 2011-02-10 Semikron Elektronik Gmbh & Co. Kg Sekundärseitige Treiberschaltung und Verfahren zur temperaturkompensierten Spannungsüberwachung eines Leistungshalbleiterschalters
EP2384091A1 (en) * 2010-04-21 2011-11-02 Osram AG Power supply circuit for light sources, such as lighting LED systems
CN108983007B (zh) * 2018-08-24 2023-09-05 深圳南云微电子有限公司 短路保护的检测电路和检测方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1022532A (en) * 1962-02-23 1966-03-16 Ass Elect Ind Direct current interrupting arrangement
JPS5433828B2 (it) * 1973-09-27 1979-10-23
JPS5241086A (en) * 1975-09-26 1977-03-30 Ooe Kagaku Kougiyou Kk Bag for oillproof drier for fatty foodstuff
GB2056808A (en) * 1979-08-17 1981-03-18 Lumenition Ltd Power transistor protection
FR2537804B1 (fr) * 1982-12-14 1986-05-23 Telemecanique Electrique Circuit de commande de la base d'un transistor de puissance utilise en commutation a haute tension
US4493002A (en) * 1983-02-28 1985-01-08 Westinghouse Electric Corp. Electronic circuit breaker
JPS60521A (ja) * 1983-06-15 1985-01-05 Mitsubishi Electric Corp 電流制限保護回路
US4581540A (en) * 1984-03-16 1986-04-08 Teledyne Industries, Inc. Current overload protected solid state relay
JPS61261920A (ja) * 1985-05-15 1986-11-20 Toshiba Corp 導電変調型ｍｏｓｆｅｔの過電流保護回路
US4669026A (en) * 1985-09-09 1987-05-26 National Semiconductor Corporation Power transistor thermal shutdown circuit
US4730228A (en) * 1986-03-21 1988-03-08 Siemens Aktiengesellschaft Overtemperature detection of power semiconductor components
SE457182B (sv) * 1987-04-03 1988-12-05 Ericsson Telefon Ab L M Anordning bestaaende av en skyddskrets foer att skydda en integrerad krets mot oeverbelastnings- och kortslutningsstroemmar

Also Published As

Publication number Publication date
GB2243732A (en) 1991-11-06
DE4041032A1 (de) 1991-10-31
JPH04122120A (ja) 1992-04-22
GB9027696D0 (en) 1991-02-13
IT1242190B (it) 1994-02-16
FR2661574B1 (fr) 1997-04-04
FR2661574A1 (fr) 1991-10-31
IT9048606A1 (it) 1991-11-01
JP2735394B2 (ja) 1998-04-02
DE4041032C2 (de) 1994-01-20
US5006949A (en) 1991-04-09
GB2243732B (en) 1994-08-10

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227