FR2661574B1 - Circuit de relais a semiconducteurs a seuil de declenchement de surcharge compense en temperature. - Google Patents
Circuit de relais a semiconducteurs a seuil de declenchement de surcharge compense en temperature.Info
- Publication number
- FR2661574B1 FR2661574B1 FR9016019A FR9016019A FR2661574B1 FR 2661574 B1 FR2661574 B1 FR 2661574B1 FR 9016019 A FR9016019 A FR 9016019A FR 9016019 A FR9016019 A FR 9016019A FR 2661574 B1 FR2661574 B1 FR 2661574B1
- Authority
- FR
- France
- Prior art keywords
- relay circuit
- temperature compensated
- trigger threshold
- semiconductor relay
- overload trigger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S323/00—Electricity: power supply or regulation systems
- Y10S323/907—Temperature compensation of semiconductor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/516,430 US5006949A (en) | 1990-04-30 | 1990-04-30 | Temperature compensated overload trip level solid state relay |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2661574A1 FR2661574A1 (fr) | 1991-10-31 |
FR2661574B1 true FR2661574B1 (fr) | 1997-04-04 |
Family
ID=24055556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9016019A Expired - Fee Related FR2661574B1 (fr) | 1990-04-30 | 1990-12-20 | Circuit de relais a semiconducteurs a seuil de declenchement de surcharge compense en temperature. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5006949A (fr) |
JP (1) | JP2735394B2 (fr) |
DE (1) | DE4041032C2 (fr) |
FR (1) | FR2661574B1 (fr) |
GB (1) | GB2243732B (fr) |
IT (1) | IT1242190B (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69311921T2 (de) * | 1992-02-03 | 1998-01-29 | Philips Electronics Nv | Anordnung zum Ein- und Ausschalten eines Leistungstransistors |
JP2807388B2 (ja) * | 1993-03-19 | 1998-10-08 | 株式会社東芝 | フォトカプラ装置 |
EP0687067A3 (fr) * | 1994-06-06 | 1997-11-19 | Eaton Corporation | Protecteur de court-circuit pour un étage de sortie isolé à MOSFET de puissance |
DE19612216A1 (de) * | 1996-03-27 | 1997-10-02 | Siemens Ag | Elektronisches Abzweigschaltgerät |
DE19633367A1 (de) * | 1996-08-19 | 1998-03-26 | Siemens Ag | Ansteuerschaltung für ein Feldeffekt gesteuertes Halbleiterbauelement |
US6307726B1 (en) * | 1998-10-02 | 2001-10-23 | Texas Instruments Incorporated | System to control the output current with temperature through a controllable current limiting circuit |
TW457767B (en) | 1999-09-27 | 2001-10-01 | Matsushita Electric Works Ltd | Photo response semiconductor switch having short circuit load protection |
EP1182776A3 (fr) * | 2000-08-18 | 2005-07-06 | Tyco Electronics AMP GmbH | Circuit de commande pour au moins un commutateur de puissance à semi-conducteurs |
US6833590B2 (en) * | 2001-01-11 | 2004-12-21 | Renesas Technology Corp. | Semiconductor device |
JP2002208644A (ja) * | 2001-01-11 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置 |
US7262948B2 (en) * | 2005-12-02 | 2007-08-28 | Tellabs Operations, Inc. | Power switch with simple overload protection |
JP2007228447A (ja) * | 2006-02-27 | 2007-09-06 | Hitachi Ltd | スイッチング素子のゲート駆動回路 |
DE102009051735B3 (de) * | 2009-11-03 | 2011-02-10 | Semikron Elektronik Gmbh & Co. Kg | Sekundärseitige Treiberschaltung und Verfahren zur temperaturkompensierten Spannungsüberwachung eines Leistungshalbleiterschalters |
EP2384091A1 (fr) * | 2010-04-21 | 2011-11-02 | Osram AG | Circuit d'alimentation de puissance de sources lumineuses, par exemple système DEL |
CN108983007B (zh) * | 2018-08-24 | 2023-09-05 | 深圳南云微电子有限公司 | 短路保护的检测电路和检测方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1022532A (en) * | 1962-02-23 | 1966-03-16 | Ass Elect Ind | Direct current interrupting arrangement |
JPS5433828B2 (fr) * | 1973-09-27 | 1979-10-23 | ||
JPS5241086A (en) * | 1975-09-26 | 1977-03-30 | Ooe Kagaku Kougiyou Kk | Bag for oillproof drier for fatty foodstuff |
GB2056808A (en) * | 1979-08-17 | 1981-03-18 | Lumenition Ltd | Power transistor protection |
FR2537804B1 (fr) * | 1982-12-14 | 1986-05-23 | Telemecanique Electrique | Circuit de commande de la base d'un transistor de puissance utilise en commutation a haute tension |
US4493002A (en) * | 1983-02-28 | 1985-01-08 | Westinghouse Electric Corp. | Electronic circuit breaker |
JPS60521A (ja) * | 1983-06-15 | 1985-01-05 | Mitsubishi Electric Corp | 電流制限保護回路 |
US4581540A (en) * | 1984-03-16 | 1986-04-08 | Teledyne Industries, Inc. | Current overload protected solid state relay |
JPS61261920A (ja) * | 1985-05-15 | 1986-11-20 | Toshiba Corp | 導電変調型mosfetの過電流保護回路 |
US4669026A (en) * | 1985-09-09 | 1987-05-26 | National Semiconductor Corporation | Power transistor thermal shutdown circuit |
US4730228A (en) * | 1986-03-21 | 1988-03-08 | Siemens Aktiengesellschaft | Overtemperature detection of power semiconductor components |
SE457182B (sv) * | 1987-04-03 | 1988-12-05 | Ericsson Telefon Ab L M | Anordning bestaaende av en skyddskrets foer att skydda en integrerad krets mot oeverbelastnings- och kortslutningsstroemmar |
-
1990
- 1990-04-30 US US07/516,430 patent/US5006949A/en not_active Expired - Lifetime
- 1990-12-20 DE DE4041032A patent/DE4041032C2/de not_active Expired - Fee Related
- 1990-12-20 GB GB9027696A patent/GB2243732B/en not_active Expired - Fee Related
- 1990-12-20 FR FR9016019A patent/FR2661574B1/fr not_active Expired - Fee Related
- 1990-12-21 JP JP2404687A patent/JP2735394B2/ja not_active Expired - Fee Related
- 1990-12-21 IT IT48606A patent/IT1242190B/it active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
IT9048606A0 (it) | 1990-12-21 |
DE4041032A1 (de) | 1991-10-31 |
GB9027696D0 (en) | 1991-02-13 |
IT9048606A1 (it) | 1991-11-01 |
DE4041032C2 (de) | 1994-01-20 |
US5006949A (en) | 1991-04-09 |
FR2661574A1 (fr) | 1991-10-31 |
JP2735394B2 (ja) | 1998-04-02 |
IT1242190B (it) | 1994-02-16 |
JPH04122120A (ja) | 1992-04-22 |
GB2243732B (en) | 1994-08-10 |
GB2243732A (en) | 1991-11-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20110131 |