IT8806627A0 - Procedimento di fabbricazione di dispositivi semiconduttori mos avvalentesi di un trattamento "gettering" di migliorare caratteristiche, e dispositivi semiconduttori mos con esso ottenuti - Google Patents
Procedimento di fabbricazione di dispositivi semiconduttori mos avvalentesi di un trattamento "gettering" di migliorare caratteristiche, e dispositivi semiconduttori mos con esso ottenutiInfo
- Publication number
- IT8806627A0 IT8806627A0 IT8806627A IT662788A IT8806627A0 IT 8806627 A0 IT8806627 A0 IT 8806627A0 IT 8806627 A IT8806627 A IT 8806627A IT 662788 A IT662788 A IT 662788A IT 8806627 A0 IT8806627 A0 IT 8806627A0
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor devices
- mos semiconductor
- gettering
- procedure
- treatment
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000005247 gettering Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8806627A IT1230028B (it) | 1988-12-16 | 1988-12-16 | Procedimento di fabbricazione di dispositivi semiconduttori mos avvalentesi di un trattamento "gettering" di migliorare caratteristiche, e dispositivi semiconduttori mos con esso ottenuti |
EP89203161A EP0373723A1 (en) | 1988-12-16 | 1989-12-12 | Method for manufacturing a MOS semiconductor device making use of a "gettering" treatment with improved characteristics, and MOS semiconductor devices obtained thereby |
JP1324913A JPH02218136A (ja) | 1988-12-16 | 1989-12-16 | Mos半導体デバイス製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8806627A IT1230028B (it) | 1988-12-16 | 1988-12-16 | Procedimento di fabbricazione di dispositivi semiconduttori mos avvalentesi di un trattamento "gettering" di migliorare caratteristiche, e dispositivi semiconduttori mos con esso ottenuti |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8806627A0 true IT8806627A0 (it) | 1988-12-16 |
IT1230028B IT1230028B (it) | 1991-09-24 |
Family
ID=11121592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT8806627A IT1230028B (it) | 1988-12-16 | 1988-12-16 | Procedimento di fabbricazione di dispositivi semiconduttori mos avvalentesi di un trattamento "gettering" di migliorare caratteristiche, e dispositivi semiconduttori mos con esso ottenuti |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0373723A1 (it) |
JP (1) | JPH02218136A (it) |
IT (1) | IT1230028B (it) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0897163A (ja) | 1994-07-28 | 1996-04-12 | Hitachi Ltd | 半導体ウエハの製造方法、半導体ウエハ、半導体集積回路装置の製造方法および半導体集積回路装置 |
JP3498431B2 (ja) * | 1995-07-04 | 2004-02-16 | 株式会社デンソー | 半導体装置の製造方法 |
JPH09120965A (ja) * | 1995-10-25 | 1997-05-06 | Toshiba Corp | 半導体装置の製造方法 |
GB2368464B (en) * | 1999-02-02 | 2002-10-16 | Nec Corp | Semiconductor device and fabrication process therefor |
US6309929B1 (en) * | 2000-09-22 | 2001-10-30 | Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. | Method of forming trench MOS device and termination structure |
WO2007007480A1 (ja) * | 2005-07-14 | 2007-01-18 | Autoliv Development Ab | シートベルト装置 |
CN101385130B (zh) * | 2006-02-24 | 2010-12-22 | 三菱电机株式会社 | 半导体装置及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0018737B1 (en) * | 1979-04-11 | 1983-11-09 | Mitsui Petrochemical Industries, Ltd. | Process for producing spherical carrier particles for olefin polymerisation catalyst, catalyst comprising such carrier particles, and use of such catalyst in olefin polymerisation |
AT380974B (de) * | 1982-04-06 | 1986-08-11 | Shell Austria | Verfahren zum gettern von halbleiterbauelementen |
KR870000315B1 (ko) * | 1983-02-14 | 1987-02-26 | 몬산토 캄파니 | 반도체 기판재료 및 전자디바이스의 제조방법 |
JPS61159741A (ja) * | 1984-12-31 | 1986-07-19 | Sony Corp | 半導体装置の製造方法 |
-
1988
- 1988-12-16 IT IT8806627A patent/IT1230028B/it active
-
1989
- 1989-12-12 EP EP89203161A patent/EP0373723A1/en not_active Withdrawn
- 1989-12-16 JP JP1324913A patent/JPH02218136A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
IT1230028B (it) | 1991-09-24 |
EP0373723A1 (en) | 1990-06-20 |
JPH02218136A (ja) | 1990-08-30 |
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