IT8025973A0 - Cella di memoria perfezionata. - Google Patents
Cella di memoria perfezionata.Info
- Publication number
- IT8025973A0 IT8025973A0 IT8025973A IT2597380A IT8025973A0 IT 8025973 A0 IT8025973 A0 IT 8025973A0 IT 8025973 A IT8025973 A IT 8025973A IT 2597380 A IT2597380 A IT 2597380A IT 8025973 A0 IT8025973 A0 IT 8025973A0
- Authority
- IT
- Italy
- Prior art keywords
- memory cell
- improved memory
- improved
- cell
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/108,070 US4287575A (en) | 1979-12-28 | 1979-12-28 | High speed high density, multi-port random access memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8025973A0 true IT8025973A0 (it) | 1980-11-14 |
IT1149266B IT1149266B (it) | 1986-12-03 |
Family
ID=22320118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT25973/80A IT1149266B (it) | 1979-12-28 | 1980-11-14 | Cella di memoria perfezionata |
Country Status (4)
Country | Link |
---|---|
US (1) | US4287575A (it) |
EP (1) | EP0031488A3 (it) |
JP (1) | JPS5698779A (it) |
IT (1) | IT1149266B (it) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0052669B1 (de) * | 1980-11-26 | 1985-03-27 | Ibm Deutschland Gmbh | Mehrfach adressierbarer hochintegrierter Halbleiterspeicher |
US4491937A (en) * | 1982-02-25 | 1985-01-01 | Trw Inc. | Multiport register file |
US4541076A (en) * | 1982-05-13 | 1985-09-10 | Storage Technology Corporation | Dual port CMOS random access memory |
JPS58211392A (ja) * | 1982-05-31 | 1983-12-08 | Toshiba Corp | 半導体記憶装置 |
FR2528614B1 (fr) * | 1982-06-15 | 1986-06-20 | Dshkhunian Valery | Memoire a transistors |
JPS5998365A (ja) * | 1982-11-27 | 1984-06-06 | Shigeto Suzuki | 複数同時アクセス型記憶装置 |
US4554645A (en) * | 1983-03-10 | 1985-11-19 | International Business Machines Corporation | Multi-port register implementation |
US4575821A (en) * | 1983-05-09 | 1986-03-11 | Rockwell International Corporation | Low power, high speed random access memory circuit |
US4570090A (en) * | 1983-06-30 | 1986-02-11 | International Business Machines Corporation | High-speed sense amplifier circuit with inhibit capability |
US4580245A (en) * | 1983-07-28 | 1986-04-01 | Sperry Corporation | Complementary metal oxide semiconductor dual port random access memory cell |
US4598390A (en) * | 1984-06-25 | 1986-07-01 | International Business Machines Corporation | Random access memory RAM employing complementary transistor switch (CTS) memory cells |
US4578779A (en) * | 1984-06-25 | 1986-03-25 | International Business Machines Corporation | Voltage mode operation scheme for bipolar arrays |
US4596002A (en) * | 1984-06-25 | 1986-06-17 | International Business Machines Corporation | Random access memory RAM employing complementary transistor switch (CTS) memory cells |
US4610004A (en) | 1984-10-10 | 1986-09-02 | Advanced Micro Devices, Inc. | Expandable four-port register file |
US4623990A (en) | 1984-10-31 | 1986-11-18 | Advanced Micro Devices, Inc. | Dual-port read/write RAM with single array |
JPS63244393A (ja) * | 1987-03-30 | 1988-10-11 | Nec Corp | 並列入出力回路を有する記憶装置 |
JP2600304B2 (ja) * | 1988-06-30 | 1997-04-16 | 三菱電機株式会社 | 半導体記憶装置とこれを用いたデータパス |
US4933909A (en) * | 1988-12-19 | 1990-06-12 | Bull Hn Information Systems Inc. | Dual read/write register file memory |
US5142540A (en) * | 1990-03-13 | 1992-08-25 | Glasser Lance A | Multipart memory apparatus with error detection |
GB2247550B (en) * | 1990-06-29 | 1994-08-03 | Digital Equipment Corp | Bipolar transistor memory cell and method |
US5365117A (en) * | 1993-03-05 | 1994-11-15 | International Business Machines Corporation | Logic gates having fast logic signal paths through switchable capacitors |
US6104663A (en) * | 1999-01-06 | 2000-08-15 | Virage Logic Corp. | Memory array with a simultaneous read or simultaneous write ports |
FR2864321B1 (fr) * | 2003-12-23 | 2007-01-19 | St Microelectronics Sa | Memoire dynamique a acces aleatoire ou dram comportant au moins deux registres tampons et procede de commande d'une telle memoire |
DE102014114197B4 (de) * | 2014-09-30 | 2016-11-17 | Infineon Technologies Ag | Chip und Verfahren zum Identifizieren eines Chips |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1453354A (fr) * | 1965-07-13 | 1966-06-03 | Labo Cent Telecommunicat | Mémoire rapide à basculateurs |
US3675218A (en) * | 1970-01-15 | 1972-07-04 | Ibm | Independent read-write monolithic memory array |
US3761898A (en) * | 1971-03-05 | 1973-09-25 | Raytheon Co | Random access memory |
US3979735A (en) * | 1973-12-13 | 1976-09-07 | Rca Corporation | Information storage circuit |
US3968480A (en) * | 1974-04-25 | 1976-07-06 | Honeywell Inc. | Memory cell |
GB1565146A (en) * | 1976-08-16 | 1980-04-16 | Fairchild Camera Instr Co | Random access momory cells |
US4070657A (en) * | 1977-01-03 | 1978-01-24 | Honeywell Information Systems Inc. | Current mode simultaneous dual-read/single-write memory device |
US4127899A (en) * | 1977-12-05 | 1978-11-28 | International Business Machines Corporation | Self-quenching memory cell |
US4193127A (en) * | 1979-01-02 | 1980-03-11 | International Business Machines Corporation | Simultaneous read/write cell |
-
1979
- 1979-12-28 US US06/108,070 patent/US4287575A/en not_active Expired - Lifetime
-
1980
- 1980-11-11 JP JP15776280A patent/JPS5698779A/ja active Pending
- 1980-11-14 IT IT25973/80A patent/IT1149266B/it active
- 1980-12-04 EP EP80107613A patent/EP0031488A3/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
EP0031488A3 (en) | 1981-07-15 |
US4287575A (en) | 1981-09-01 |
EP0031488A2 (en) | 1981-07-08 |
IT1149266B (it) | 1986-12-03 |
JPS5698779A (en) | 1981-08-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT8025973A0 (it) | Cella di memoria perfezionata. | |
IT8024316A0 (it) | Cella elettrolitica non acquosa. | |
IT1115344B (it) | Cella di memoria capacitiva perfezionata | |
IT8020192A0 (it) | Cella elettrochimica non acquosa. | |
IT1165399B (it) | Memoria perfezionata | |
NL7701941A (nl) | Galvanische cel. | |
NL7809899A (nl) | Geheugencel. | |
IT7821028A0 (it) | Cella elettrochimica cilindrica. | |
NL7811958A (nl) | Cel. | |
NL7707026A (nl) | Galvanische cel. | |
DE3072204D1 (de) | Halbleiterspeicheranordnung. | |
NL7902417A (nl) | Lithium-jodiumcel. | |
IT1056928B (it) | Cella di memoria | |
NL190566C (nl) | Elektrochemische cel. | |
NO803691L (no) | Elektrode for elektrolysecelle. | |
IT7925852A0 (it) | Cella di memoria tagliata mediante laser. | |
NL186797C (nl) | Slagpers. | |
IT1195034B (it) | Cella non acquosa prescaricata | |
NL7808151A (nl) | Statische geheugencel. | |
IT8219006A0 (it) | Cella di refrigerazione perfezionata. | |
IT8050099A0 (it) | Cella fotoelettrochimica autoreversibile | |
ES493988A0 (es) | Perfeccionamientos introducidos en celulas electrolitas. | |
IT1141377B (it) | Cella di memoria cmos/sos,includente diodi | |
IT8022716A0 (it) | Struttura di memoria perfezionata. | |
NL7709822A (nl) | Geheugencel. |