IT8025973A0 - Cella di memoria perfezionata. - Google Patents

Cella di memoria perfezionata.

Info

Publication number: IT8025973A0
Authority: IT; Italy
Prior art keywords: memory cell; improved memory; improved; cell; memory
Prior art date: 1979-12-28

Application number

IT8025973A

Other languages

English (en)

Other versions

IT1149266B (it

Inventor

David Barry Eardley

Richard Edward Matick

Original Assignee

Int Busines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-12-28

Filing date

1980-11-14

Publication date

1980-11-14

1980-11-14 Application filed by Int Busines Corp filed Critical Int Busines Corp

1980-11-14 Publication of IT8025973A0 publication Critical patent/IT8025973A0/it

1986-12-03 Application granted granted Critical

1986-12-03 Publication of IT1149266B publication Critical patent/IT1149266B/it

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Static Random-Access Memory (AREA)

IT25973/80A 1979-12-28 1980-11-14 Cella di memoria perfezionata IT1149266B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US06/108,070 US4287575A (en)	1979-12-28	1979-12-28	High speed high density, multi-port random access memory cell

Publications (2)

Publication Number	Publication Date
IT8025973A0 true IT8025973A0 (it)	1980-11-14
IT1149266B IT1149266B (it)	1986-12-03

Family

ID=22320118

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT25973/80A IT1149266B (it)	1979-12-28	1980-11-14	Cella di memoria perfezionata

Country Status (4)

Country	Link
US (1)	US4287575A (it)
EP (1)	EP0031488A3 (it)
JP (1)	JPS5698779A (it)
IT (1)	IT1149266B (it)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0052669B1 (de) *	1980-11-26	1985-03-27	Ibm Deutschland Gmbh	Mehrfach adressierbarer hochintegrierter Halbleiterspeicher
US4491937A (en) *	1982-02-25	1985-01-01	Trw Inc.	Multiport register file
US4541076A (en) *	1982-05-13	1985-09-10	Storage Technology Corporation	Dual port CMOS random access memory
JPS58211392A (ja) *	1982-05-31	1983-12-08	Toshiba Corp	半導体記憶装置
FR2528614B1 (fr) *	1982-06-15	1986-06-20	Dshkhunian Valery	Memoire a transistors
JPS5998365A (ja) *	1982-11-27	1984-06-06	Shigeto Suzuki	複数同時アクセス型記憶装置
US4554645A (en) *	1983-03-10	1985-11-19	International Business Machines Corporation	Multi-port register implementation
US4575821A (en) *	1983-05-09	1986-03-11	Rockwell International Corporation	Low power, high speed random access memory circuit
US4570090A (en) *	1983-06-30	1986-02-11	International Business Machines Corporation	High-speed sense amplifier circuit with inhibit capability
US4580245A (en) *	1983-07-28	1986-04-01	Sperry Corporation	Complementary metal oxide semiconductor dual port random access memory cell
US4598390A (en) *	1984-06-25	1986-07-01	International Business Machines Corporation	Random access memory RAM employing complementary transistor switch (CTS) memory cells
US4578779A (en) *	1984-06-25	1986-03-25	International Business Machines Corporation	Voltage mode operation scheme for bipolar arrays
US4596002A (en) *	1984-06-25	1986-06-17	International Business Machines Corporation	Random access memory RAM employing complementary transistor switch (CTS) memory cells
US4610004A (en)	1984-10-10	1986-09-02	Advanced Micro Devices, Inc.	Expandable four-port register file
US4623990A (en)	1984-10-31	1986-11-18	Advanced Micro Devices, Inc.	Dual-port read/write RAM with single array
JPS63244393A (ja) *	1987-03-30	1988-10-11	Nec Corp	並列入出力回路を有する記憶装置
JP2600304B2 (ja) *	1988-06-30	1997-04-16	三菱電機株式会社	半導体記憶装置とこれを用いたデータパス
US4933909A (en) *	1988-12-19	1990-06-12	Bull Hn Information Systems Inc.	Dual read/write register file memory
US5142540A (en) *	1990-03-13	1992-08-25	Glasser Lance A	Multipart memory apparatus with error detection
GB2247550B (en) *	1990-06-29	1994-08-03	Digital Equipment Corp	Bipolar transistor memory cell and method
US5365117A (en) *	1993-03-05	1994-11-15	International Business Machines Corporation	Logic gates having fast logic signal paths through switchable capacitors
US6104663A (en) *	1999-01-06	2000-08-15	Virage Logic Corp.	Memory array with a simultaneous read or simultaneous write ports
FR2864321B1 (fr) *	2003-12-23	2007-01-19	St Microelectronics Sa	Memoire dynamique a acces aleatoire ou dram comportant au moins deux registres tampons et procede de commande d'une telle memoire
DE102014114197B4 (de) *	2014-09-30	2016-11-17	Infineon Technologies Ag	Chip und Verfahren zum Identifizieren eines Chips

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR1453354A (fr) *	1965-07-13	1966-06-03	Labo Cent Telecommunicat	Mémoire rapide à basculateurs
US3675218A (en) *	1970-01-15	1972-07-04	Ibm	Independent read-write monolithic memory array
US3761898A (en) *	1971-03-05	1973-09-25	Raytheon Co	Random access memory
US3979735A (en) *	1973-12-13	1976-09-07	Rca Corporation	Information storage circuit
US3968480A (en) *	1974-04-25	1976-07-06	Honeywell Inc.	Memory cell
GB1565146A (en) *	1976-08-16	1980-04-16	Fairchild Camera Instr Co	Random access momory cells
US4070657A (en) *	1977-01-03	1978-01-24	Honeywell Information Systems Inc.	Current mode simultaneous dual-read/single-write memory device
US4127899A (en) *	1977-12-05	1978-11-28	International Business Machines Corporation	Self-quenching memory cell
US4193127A (en) *	1979-01-02	1980-03-11	International Business Machines Corporation	Simultaneous read/write cell

1979
- 1979-12-28 US US06/108,070 patent/US4287575A/en not_active Expired - Lifetime
1980
- 1980-11-11 JP JP15776280A patent/JPS5698779A/ja active Pending
- 1980-11-14 IT IT25973/80A patent/IT1149266B/it active
- 1980-12-04 EP EP80107613A patent/EP0031488A3/en not_active Ceased

Also Published As

Publication number	Publication date
EP0031488A3 (en)	1981-07-15
US4287575A (en)	1981-09-01
EP0031488A2 (en)	1981-07-08
IT1149266B (it)	1986-12-03
JPS5698779A (en)	1981-08-08

Publication	Publication Date	Title
IT8025973A0 (it)	1980-11-14	Cella di memoria perfezionata.
IT8024316A0 (it)	1980-08-27	Cella elettrolitica non acquosa.
IT1115344B (it)	1986-02-03	Cella di memoria capacitiva perfezionata
IT8020192A0 (it)	1980-02-26	Cella elettrochimica non acquosa.
IT1165399B (it)	1987-04-22	Memoria perfezionata
NL7701941A (nl)	1977-08-26	Galvanische cel.
NL7809899A (nl)	1979-04-03	Geheugencel.
IT7821028A0 (it)	1978-03-09	Cella elettrochimica cilindrica.
NL7811958A (nl)	1979-06-12	Cel.
NL7707026A (nl)	1978-04-28	Galvanische cel.
DE3072204D1 (de)	1992-12-17	Halbleiterspeicheranordnung.
NL7902417A (nl)	1979-10-02	Lithium-jodiumcel.
IT1056928B (it)	1982-02-20	Cella di memoria
NL190566C (nl)	1994-04-18	Elektrochemische cel.
NO803691L (no)	1981-06-09	Elektrode for elektrolysecelle.
IT7925852A0 (it)	1979-09-20	Cella di memoria tagliata mediante laser.
NL186797C (nl)	1991-03-01	Slagpers.
IT1195034B (it)	1988-09-28	Cella non acquosa prescaricata
NL7808151A (nl)	1979-02-06	Statische geheugencel.
IT8219006A0 (it)	1982-01-05	Cella di refrigerazione perfezionata.
IT8050099A0 (it)	1980-11-07	Cella fotoelettrochimica autoreversibile
ES493988A0 (es)	1981-07-01	Perfeccionamientos introducidos en celulas electrolitas.
IT1141377B (it)	1986-10-01	Cella di memoria cmos/sos,includente diodi
IT8022716A0 (it)	1980-06-11	Struttura di memoria perfezionata.
NL7709822A (nl)	1978-03-14	Geheugencel.