NL7809899A - Geheugencel. - Google Patents
Geheugencel.Info
- Publication number
- NL7809899A NL7809899A NL7809899A NL7809899A NL7809899A NL 7809899 A NL7809899 A NL 7809899A NL 7809899 A NL7809899 A NL 7809899A NL 7809899 A NL7809899 A NL 7809899A NL 7809899 A NL7809899 A NL 7809899A
- Authority
- NL
- Netherlands
- Prior art keywords
- memory cell
- cell
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/838,437 US4163985A (en) | 1977-09-30 | 1977-09-30 | Nonvolatile punch through memory cell with buried n+ region in channel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7809899A true NL7809899A (nl) | 1979-04-03 |
Family
ID=25277084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7809899A NL7809899A (nl) | 1977-09-30 | 1978-09-29 | Geheugencel. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4163985A (nl) |
| DE (1) | DE2842122A1 (nl) |
| FR (1) | FR2404893A1 (nl) |
| GB (1) | GB2005914B (nl) |
| NL (1) | NL7809899A (nl) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4471368A (en) * | 1977-10-13 | 1984-09-11 | Mohsen Amr M | Dynamic RAM memory and vertical charge coupled dynamic storage cell therefor |
| NL7801532A (nl) * | 1978-02-10 | 1979-08-14 | Philips Nv | Halfgeleiderinrichting. |
| JPS54149469A (en) * | 1978-05-16 | 1979-11-22 | Toshiba Corp | Semiconductor device |
| US4305083A (en) * | 1978-09-19 | 1981-12-08 | Texas Instruments Incorporated | Single junction charge injector floating gate memory cell |
| JPS607389B2 (ja) * | 1978-12-26 | 1985-02-23 | 超エル・エス・アイ技術研究組合 | 半導体装置の製造方法 |
| JPS5656677A (en) * | 1979-10-13 | 1981-05-18 | Toshiba Corp | Semiconductor memory device |
| US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
| JPS5955071A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Micro Comput Eng Ltd | 不揮発性半導体装置 |
| JPS59161873A (ja) * | 1983-03-07 | 1984-09-12 | Agency Of Ind Science & Technol | 半導体不揮発性メモリ |
| ATE123590T1 (de) * | 1989-03-31 | 1995-06-15 | Philips Electronics Nv | Elektrisch programmierbare halbleiterspeicher. |
| GB8907262D0 (en) * | 1989-03-31 | 1989-05-17 | Philips Nv | Electrically-programmable semiconductor memories |
| US5216269A (en) * | 1989-03-31 | 1993-06-01 | U.S. Philips Corp. | Electrically-programmable semiconductor memories with buried injector region |
| US5850093A (en) * | 1989-11-20 | 1998-12-15 | Tarng; Huang Chang | Uni-directional flash device |
| US5264384A (en) * | 1991-08-30 | 1993-11-23 | Texas Instruments Incorporated | Method of making a non-volatile memory cell |
| US6128211A (en) * | 1997-11-06 | 2000-10-03 | National Science Council | Structures of a low-voltage-operative non-volatile ferroelectric memory device with floating gate |
| US6117739A (en) * | 1998-10-02 | 2000-09-12 | Advanced Micro Devices, Inc. | Semiconductor device with layered doped regions and methods of manufacture |
| US6677640B1 (en) * | 2000-03-01 | 2004-01-13 | Micron Technology, Inc. | Memory cell with tight coupling |
| KR100375232B1 (ko) * | 2001-03-20 | 2003-03-08 | 삼성전자주식회사 | 비휘발성 메모리 소자의 제조방법 |
| US6980471B1 (en) * | 2004-12-23 | 2005-12-27 | Sandisk Corporation | Substrate electron injection techniques for programming non-volatile charge storage memory cells |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3887407A (en) * | 1967-02-03 | 1975-06-03 | Hitachi Ltd | Method of manufacturing semiconductor device with nitride oxide double layer film |
| JPS5137151B2 (nl) * | 1971-09-08 | 1976-10-14 | ||
| GB1354071A (en) * | 1972-12-05 | 1974-06-05 | Plessey Co Ltd | Memory elements |
| US3877054A (en) * | 1973-03-01 | 1975-04-08 | Bell Telephone Labor Inc | Semiconductor memory apparatus with a multilayer insulator contacting the semiconductor |
| JPS5636585B2 (nl) * | 1973-07-02 | 1981-08-25 | ||
| JPS5024084A (nl) * | 1973-07-05 | 1975-03-14 | ||
| US3996657A (en) * | 1974-12-30 | 1976-12-14 | Intel Corporation | Double polycrystalline silicon gate memory device |
| US3923559A (en) * | 1975-01-13 | 1975-12-02 | Bell Telephone Labor Inc | Use of trapped hydrogen for annealing metal-oxide-semiconductor devices |
| JPS51122383A (en) * | 1975-04-18 | 1976-10-26 | Fujitsu Ltd | Semiconductor memory |
| US4000504A (en) * | 1975-05-12 | 1976-12-28 | Hewlett-Packard Company | Deep channel MOS transistor |
| US4035820A (en) * | 1975-12-29 | 1977-07-12 | Texas Instruments Incorporated | Adjustment of avalanche voltage in DIFMOS memory devices by control of impurity doping |
| US4010482A (en) * | 1975-12-31 | 1977-03-01 | International Business Machines Corporation | Non-volatile schottky barrier diode memory cell |
-
1977
- 1977-09-30 US US05/838,437 patent/US4163985A/en not_active Expired - Lifetime
-
1978
- 1978-09-15 GB GB7836946A patent/GB2005914B/en not_active Expired
- 1978-09-27 DE DE19782842122 patent/DE2842122A1/de not_active Withdrawn
- 1978-09-27 FR FR7827688A patent/FR2404893A1/fr not_active Withdrawn
- 1978-09-29 NL NL7809899A patent/NL7809899A/nl not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2005914A (en) | 1979-04-25 |
| GB2005914B (en) | 1982-05-19 |
| FR2404893A1 (fr) | 1979-04-27 |
| DE2842122A1 (de) | 1979-04-12 |
| US4163985A (en) | 1979-08-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |