IT8020023A0 - COMPOSITE PASSIVATION MATERIAL FOR A SEMICONDUCTOR DEVICE INCLUDING A LAYER OF SILICON NITRIDE (SI THIRD N FOURTH) AND A LAYER OF PHOSPHOSILICATE GLASS (PSG) AND METHOD OF MANUFACTURE THEREOF. - Google Patents

COMPOSITE PASSIVATION MATERIAL FOR A SEMICONDUCTOR DEVICE INCLUDING A LAYER OF SILICON NITRIDE (SI THIRD N FOURTH) AND A LAYER OF PHOSPHOSILICATE GLASS (PSG) AND METHOD OF MANUFACTURE THEREOF.

Info

Publication number
IT8020023A0
IT8020023A0 IT8020023A IT2002380A IT8020023A0 IT 8020023 A0 IT8020023 A0 IT 8020023A0 IT 8020023 A IT8020023 A IT 8020023A IT 2002380 A IT2002380 A IT 2002380A IT 8020023 A0 IT8020023 A0 IT 8020023A0
Authority
IT
Italy
Prior art keywords
layer
psg
manufacture
semiconductor device
silicon nitride
Prior art date
Application number
IT8020023A
Other languages
Italian (it)
Other versions
IT8020023A1 (en
IT1140645B (en
Inventor
Blumenfeld Martin Albert
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8020023A0 publication Critical patent/IT8020023A0/en
Publication of IT8020023A1 publication Critical patent/IT8020023A1/en
Application granted granted Critical
Publication of IT1140645B publication Critical patent/IT1140645B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
IT20023/80A 1979-03-05 1980-02-19 PASSIVATION COMPOSITE MATERIAL FOR A SEMICONDUCTIVE DEVICE INCLUDING A LAYER OF SILICON NITRIDE (YES TO THIRD IN FOURTH) AND A LAYER OF PHOSPHOSILICATE (PSG) GLASS AND MANUFACTURING METHOD IT1140645B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1710079A 1979-03-05 1979-03-05

Publications (3)

Publication Number Publication Date
IT8020023A0 true IT8020023A0 (en) 1980-02-19
IT8020023A1 IT8020023A1 (en) 1981-08-19
IT1140645B IT1140645B (en) 1986-10-01

Family

ID=21780714

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20023/80A IT1140645B (en) 1979-03-05 1980-02-19 PASSIVATION COMPOSITE MATERIAL FOR A SEMICONDUCTIVE DEVICE INCLUDING A LAYER OF SILICON NITRIDE (YES TO THIRD IN FOURTH) AND A LAYER OF PHOSPHOSILICATE (PSG) GLASS AND MANUFACTURING METHOD

Country Status (7)

Country Link
JP (1) JPS55121669A (en)
DE (1) DE3007500A1 (en)
FR (1) FR2451103A1 (en)
GB (1) GB2044533B (en)
IT (1) IT1140645B (en)
NL (1) NL8001310A (en)
YU (1) YU61180A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4542037A (en) * 1980-04-28 1985-09-17 Fairchild Camera And Instrument Corporation Laser induced flow of glass bonded materials
CA1174285A (en) * 1980-04-28 1984-09-11 Michelangelo Delfino Laser induced flow of integrated circuit structure materials
JPS581878A (en) * 1981-06-26 1983-01-07 Fujitsu Ltd Production of bubble memory device
DE3130666A1 (en) * 1981-08-03 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Method for fabricating integrated MOS field effect transistors having a phosphosilicate glass layer as an intermediary oxide layer
DE3131050A1 (en) * 1981-08-05 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Process for fabricating integrated MOS field effect transistors, employing a surface layer consisting of phosphosilicate glass on the intermediary oxide between polysilicon plane and metal conductor track plane
DE3133516A1 (en) * 1981-08-25 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Process for rounding the intermediary oxide between the polysilicon plane and metal conductor track plane when fabricating integrated n-type channel MOS field-effect transistors
JPS5898934A (en) * 1981-12-08 1983-06-13 Matsushita Electronics Corp Manufacture of semiconductor device
US4686000A (en) * 1985-04-02 1987-08-11 Heath Barbara A Self-aligned contact process
JPH088246A (en) * 1994-06-21 1996-01-12 Nippon Motorola Ltd Method for forming metal wiring of semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3627598A (en) * 1970-02-05 1971-12-14 Fairchild Camera Instr Co Nitride passivation of mesa transistors by phosphovapox lifting
US3917495A (en) * 1970-06-01 1975-11-04 Gen Electric Method of making improved planar devices including oxide-nitride composite layer
US3943621A (en) * 1974-03-25 1976-03-16 General Electric Company Semiconductor device and method of manufacture therefor
US4005240A (en) * 1975-03-10 1977-01-25 Aeronutronic Ford Corporation Germanium device passivation
US4273805A (en) * 1978-06-19 1981-06-16 Rca Corporation Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer

Also Published As

Publication number Publication date
NL8001310A (en) 1980-09-09
GB2044533B (en) 1983-12-14
JPS55121669A (en) 1980-09-18
DE3007500A1 (en) 1980-09-18
YU61180A (en) 1983-02-28
IT8020023A1 (en) 1981-08-19
IT1140645B (en) 1986-10-01
GB2044533A (en) 1980-10-15
FR2451103A1 (en) 1980-10-03

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