IT7925046A0 - Processo ed apparecchiatura di attacco mediante plasma. - Google Patents
Processo ed apparecchiatura di attacco mediante plasma.Info
- Publication number
- IT7925046A0 IT7925046A0 IT7925046A IT2504679A IT7925046A0 IT 7925046 A0 IT7925046 A0 IT 7925046A0 IT 7925046 A IT7925046 A IT 7925046A IT 2504679 A IT2504679 A IT 2504679A IT 7925046 A0 IT7925046 A0 IT 7925046A0
- Authority
- IT
- Italy
- Prior art keywords
- attacking
- plasma
- equipment
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S422/00—Chemical apparatus and process disinfecting, deodorizing, preserving, or sterilizing
- Y10S422/906—Plasma or ion generation means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/934,733 US4183780A (en) | 1978-08-21 | 1978-08-21 | Photon enhanced reactive ion etching |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7925046A0 true IT7925046A0 (it) | 1979-08-10 |
IT1163693B IT1163693B (it) | 1987-04-08 |
Family
ID=25465975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT25046/79A IT1163693B (it) | 1978-08-21 | 1979-08-10 | Processo ed apparecchiatura di attacco mediante plasma |
Country Status (5)
Country | Link |
---|---|
US (1) | US4183780A (it) |
EP (1) | EP0009558B1 (it) |
JP (1) | JPS5528390A (it) |
DE (1) | DE2962446D1 (it) |
IT (1) | IT1163693B (it) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4246296A (en) * | 1979-02-14 | 1981-01-20 | Bell Telephone Laboratories, Incorporated | Controlling the properties of native films using selective growth chemistry |
US4340461A (en) * | 1980-09-10 | 1982-07-20 | International Business Machines Corp. | Modified RIE chamber for uniform silicon etching |
JPS6034085B2 (ja) | 1981-04-20 | 1985-08-07 | 松下電器産業株式会社 | カラ−フイルタの製造方法 |
US4331504A (en) * | 1981-06-25 | 1982-05-25 | International Business Machines Corporation | Etching process with vibrationally excited SF6 |
US4454835A (en) * | 1982-09-13 | 1984-06-19 | The United States Of America As Represented By The Secretary Of The Navy | Internal photolysis reactor |
JPS59135730A (ja) * | 1983-01-24 | 1984-08-04 | Hitachi Ltd | 表面改質装置 |
JPS59207631A (ja) * | 1983-05-11 | 1984-11-24 | Semiconductor Res Found | 光化学を用いたドライプロセス装置 |
JPH0622212B2 (ja) * | 1983-05-31 | 1994-03-23 | 株式会社東芝 | ドライエッチング方法 |
US4496448A (en) * | 1983-10-13 | 1985-01-29 | At&T Bell Laboratories | Method for fabricating devices with DC bias-controlled reactive ion etching |
US5780313A (en) | 1985-02-14 | 1998-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
US4505949A (en) * | 1984-04-25 | 1985-03-19 | Texas Instruments Incorporated | Thin film deposition using plasma-generated source gas |
KR920004171B1 (ko) * | 1984-07-11 | 1992-05-30 | 가부시기가이샤 히다찌세이사꾸쇼 | 드라이에칭장치 |
DE3584798D1 (de) * | 1984-07-17 | 1992-01-16 | Nec Corp | Anreizverfahren und vorrichtung fuer photochemische reaktionen. |
US4624736A (en) * | 1984-07-24 | 1986-11-25 | The United States Of America As Represented By The United States Department Of Energy | Laser/plasma chemical processing of substrates |
JPS6175529A (ja) * | 1984-09-21 | 1986-04-17 | Toshiba Corp | ドライエツチング方法及び装置 |
JPH0752718B2 (ja) | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | 薄膜形成方法 |
US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
US4668304A (en) * | 1985-04-10 | 1987-05-26 | Eaton Corporation | Dopant gettering semiconductor processing by excimer laser |
US4687544A (en) * | 1985-05-17 | 1987-08-18 | Emergent Technologies Corporation | Method and apparatus for dry processing of substrates |
US5769950A (en) * | 1985-07-23 | 1998-06-23 | Canon Kabushiki Kaisha | Device for forming deposited film |
US6077718A (en) * | 1985-07-23 | 2000-06-20 | Canon Kabushiki Kaisha | Method for forming deposited film |
US5261961A (en) * | 1985-07-23 | 1993-11-16 | Canon Kabushiki Kaisha | Device for forming deposited film |
US5512102A (en) * | 1985-10-14 | 1996-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
JPS6314434A (ja) * | 1986-07-04 | 1988-01-21 | Dainippon Screen Mfg Co Ltd | 基板表面処理方法および装置 |
US4974542A (en) * | 1986-09-26 | 1990-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Photochemical vapor reaction apparatus |
US4916091A (en) * | 1987-11-05 | 1990-04-10 | Texas Instruments Incorporated | Plasma and plasma UV deposition of SiO2 |
US4843030A (en) * | 1987-11-30 | 1989-06-27 | Eaton Corporation | Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes |
US4913789A (en) * | 1988-04-18 | 1990-04-03 | Aung David K | Sputter etching and coating process |
US5407867A (en) * | 1988-05-12 | 1995-04-18 | Mitsubishki Denki Kabushiki Kaisha | Method of forming a thin film on surface of semiconductor substrate |
US5174881A (en) * | 1988-05-12 | 1992-12-29 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming a thin film on surface of semiconductor substrate |
JPH0622218B2 (ja) * | 1988-08-06 | 1994-03-23 | 富士通株式会社 | エッチング方法 |
KR930011413B1 (ko) * | 1990-09-25 | 1993-12-06 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 펄스형 전자파를 사용한 플라즈마 cvd 법 |
US5380503A (en) * | 1992-03-13 | 1995-01-10 | Ebara Research Co., Ltd. | Stocker |
US5565036A (en) * | 1994-01-19 | 1996-10-15 | Tel America, Inc. | Apparatus and method for igniting plasma in a process module |
US5534107A (en) * | 1994-06-14 | 1996-07-09 | Fsi International | UV-enhanced dry stripping of silicon nitride films |
US5580421A (en) * | 1994-06-14 | 1996-12-03 | Fsi International | Apparatus for surface conditioning |
JPH0864559A (ja) * | 1994-06-14 | 1996-03-08 | Fsi Internatl Inc | 基板面から不要な物質を除去する方法 |
US6015503A (en) * | 1994-06-14 | 2000-01-18 | Fsi International, Inc. | Method and apparatus for surface conditioning |
US6124211A (en) * | 1994-06-14 | 2000-09-26 | Fsi International, Inc. | Cleaning method |
US5635102A (en) | 1994-09-28 | 1997-06-03 | Fsi International | Highly selective silicon oxide etching method |
US6156389A (en) * | 1997-02-03 | 2000-12-05 | Cytonix Corporation | Hydrophobic coating compositions, articles coated with said compositions, and processes for manufacturing same |
US6495624B1 (en) | 1997-02-03 | 2002-12-17 | Cytonix Corporation | Hydrophobic coating compositions, articles coated with said compositions, and processes for manufacturing same |
US5853894A (en) * | 1997-02-03 | 1998-12-29 | Cytonix Corporation | Laboratory vessel having hydrophobic coating and process for manufacturing same |
US7268179B2 (en) * | 1997-02-03 | 2007-09-11 | Cytonix Corporation | Hydrophobic coating compositions, articles coated with said compositions, and processes for manufacturing same |
US8653213B2 (en) | 1997-02-03 | 2014-02-18 | Cytonix, Llc | Hydrophobic coating compositions and articles coated with said compositions |
US6165273A (en) | 1997-10-21 | 2000-12-26 | Fsi International Inc. | Equipment for UV wafer heating and photochemistry |
US6265033B1 (en) | 1998-09-11 | 2001-07-24 | Donald Bennett Hilliard | Method for optically coupled vapor deposition |
US6136210A (en) * | 1998-11-02 | 2000-10-24 | Xerox Corporation | Photoetching of acoustic lenses for acoustic ink printing |
US6569775B1 (en) | 1999-03-30 | 2003-05-27 | Applied Materials, Inc. | Method for enhancing plasma processing performance |
US6515785B1 (en) * | 1999-04-22 | 2003-02-04 | 3M Innovative Properties Company | Optical devices using reflecting polarizing materials |
US20090155487A1 (en) * | 2007-12-13 | 2009-06-18 | International Business Machines Corporation | Ultraviolet uv photo processing or curing of thin films with surface treatment |
US20140335695A1 (en) * | 2013-05-10 | 2014-11-13 | Applied Materials, Inc. | External uv light sources to minimize asymmetric resist pattern trimming rate for three dimensional semiconductor chip manufacture |
US11230766B2 (en) * | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3095341A (en) * | 1961-06-30 | 1963-06-25 | Bell Telephone Labor Inc | Photosensitive gas phase etching of semiconductors by selective radiation |
NL275192A (it) * | 1961-06-30 | |||
DE1298851B (de) * | 1963-12-02 | 1969-07-03 | Steigerwald | Verfahren zur Materialbearbeitung mittels Strahlungsenergie |
DD63253A3 (it) * | 1966-12-05 | 1968-08-05 | ||
US3536547A (en) * | 1968-03-25 | 1970-10-27 | Bell Telephone Labor Inc | Plasma deposition of oxide coatings on silicon and electron bombardment of portions thereof to be etched selectively |
US3551213A (en) * | 1968-09-04 | 1970-12-29 | Bell Telephone Labor Inc | Geometrically selective ion bombardment by means of the photoelectric effect |
US3738926A (en) * | 1972-03-28 | 1973-06-12 | Bell Canada | Method and apparatus for controlling the electrical properties of sputtered films |
US3791952A (en) * | 1972-07-24 | 1974-02-12 | Bell Telephone Labor Inc | Method for neutralizing charge in semiconductor bodies and dielectric coatings induced by cathodic etching |
GB1417085A (en) * | 1973-05-17 | 1975-12-10 | Standard Telephones Cables Ltd | Plasma etching |
US3880684A (en) * | 1973-08-03 | 1975-04-29 | Mitsubishi Electric Corp | Process for preparing semiconductor |
US3918383A (en) * | 1974-04-18 | 1975-11-11 | Richard Brown | Anti-noise device for the masts of sailing vessels and the like and methods for preventing noise |
US4123663A (en) * | 1975-01-22 | 1978-10-31 | Tokyo Shibaura Electric Co., Ltd. | Gas-etching device |
FR2308200A1 (fr) * | 1975-04-18 | 1976-11-12 | Burroughs Corp | Installation de fabrication de semi-conducteurs et procede pour une telle fabrication |
DE2536718C3 (de) * | 1975-08-18 | 1978-04-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung geätzter Strukturen in Festkörperoberflächen durch Ionenätzung und Bestrahlungsmaske zur Verwendung in diesem Verfahren |
GB1498459A (en) * | 1975-12-23 | 1978-01-18 | Phizi I Im P N Lebedeva An Sss | Growing semiconductor epitaxial films |
NL7607298A (nl) * | 1976-07-02 | 1978-01-04 | Philips Nv | Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd volgens de werkwijze. |
DE2716592C3 (de) * | 1976-04-15 | 1979-11-08 | Hitachi, Ltd., Tokio | Plasma-Ätzvorrichtung |
JPS53112066A (en) * | 1977-03-11 | 1978-09-30 | Fujitsu Ltd | Plasma treatment apparatus |
-
1978
- 1978-08-21 US US05/934,733 patent/US4183780A/en not_active Expired - Lifetime
-
1979
- 1979-07-13 JP JP8838779A patent/JPS5528390A/ja active Granted
- 1979-07-25 DE DE7979102644T patent/DE2962446D1/de not_active Expired
- 1979-07-25 EP EP79102644A patent/EP0009558B1/de not_active Expired
- 1979-08-10 IT IT25046/79A patent/IT1163693B/it active
Also Published As
Publication number | Publication date |
---|---|
US4183780A (en) | 1980-01-15 |
EP0009558A1 (de) | 1980-04-16 |
JPS5528390A (en) | 1980-02-28 |
JPS5614749B2 (it) | 1981-04-06 |
EP0009558B1 (de) | 1982-04-07 |
IT1163693B (it) | 1987-04-08 |
DE2962446D1 (en) | 1982-05-19 |
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