IT202000004696A1 - METODO DI FABBRICAZIONE DI UN DISPOSITIVO ELETTRONICO IN SiC CON FASI DI MANIPOLAZIONE RIDOTTE, E DISPOSITIVO ELETTRONICO IN SiC - Google Patents

METODO DI FABBRICAZIONE DI UN DISPOSITIVO ELETTRONICO IN SiC CON FASI DI MANIPOLAZIONE RIDOTTE, E DISPOSITIVO ELETTRONICO IN SiC Download PDF

Info

Publication number: IT202000004696A1
Authority: IT; Italy
Prior art keywords: sic; substrate; electronic device; layer; metal
Prior art date: 2020-03-05

Application number

IT102020000004696A

Other languages

English (en)

Italian (it)

Inventor

Paolo Badala'

Simone Rascuna'

Anna Bassi

Mario Giuseppe Saggio

Giovanni Franco

Original Assignee

St Microelectronics Srl

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2020-03-05

Filing date

2020-03-05

Publication date

2021-09-05

2020-03-05 Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl

2020-03-05 Priority to IT102020000004696A priority Critical patent/IT202000004696A1/it

2021-02-26 Priority to JP2021030603A priority patent/JP2021141322A/ja

2021-03-03 Priority to US17/190,722 priority patent/US11784049B2/en

2021-03-04 Priority to CN202110240820.8A priority patent/CN113363153A/zh

2021-03-04 Priority to CN202120471549.4U priority patent/CN216719954U/zh

2021-03-05 Priority to EP21161040.7A priority patent/EP3876263A1/en

2021-09-05 Publication of IT202000004696A1 publication Critical patent/IT202000004696A1/it

2023-08-31 Priority to US18/459,273 priority patent/US20230411158A1/en

Links

238000004519 manufacturing process Methods 0.000 title claims description 13
239000000758 substrate Substances 0.000 claims description 55
230000015572 biosynthetic process Effects 0.000 claims description 28
238000001465 metallisation Methods 0.000 claims description 26
239000010936 titanium Substances 0.000 claims description 25
229910052751 metal Inorganic materials 0.000 claims description 24
239000002184 metal Substances 0.000 claims description 24
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
238000000034 method Methods 0.000 claims description 18
229910052719 titanium Inorganic materials 0.000 claims description 18
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
238000010438 heat treatment Methods 0.000 claims description 15
150000001875 compounds Chemical class 0.000 claims description 12
238000000151 deposition Methods 0.000 claims description 12
229910052759 nickel Inorganic materials 0.000 claims description 10
230000004888 barrier function Effects 0.000 claims description 8
238000006243 chemical reaction Methods 0.000 claims description 8
229910052799 carbon Inorganic materials 0.000 claims description 6
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
229910052750 molybdenum Inorganic materials 0.000 claims description 4
239000011733 molybdenum Substances 0.000 claims description 4
239000010941 cobalt Substances 0.000 claims 3
229910017052 cobalt Inorganic materials 0.000 claims 3
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 3
229910052715 tantalum Inorganic materials 0.000 claims 3
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 3
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 3
229910052721 tungsten Inorganic materials 0.000 claims 3
239000010937 tungsten Substances 0.000 claims 3
150000002736 metal compounds Chemical class 0.000 claims 2
229910021332 silicide Inorganic materials 0.000 claims 1
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
229910010271 silicon carbide Inorganic materials 0.000 description 43
235000012431 wafers Nutrition 0.000 description 36
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 34
239000002019 doping agent Substances 0.000 description 17
239000000463 material Substances 0.000 description 11
230000008021 deposition Effects 0.000 description 6
238000000227 grinding Methods 0.000 description 6
238000002513 implantation Methods 0.000 description 6
239000007769 metal material Substances 0.000 description 6
RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
229910021334 nickel silicide Inorganic materials 0.000 description 5
230000008569 process Effects 0.000 description 5
229910052710 silicon Inorganic materials 0.000 description 5
239000010703 silicon Substances 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 4
230000008901 benefit Effects 0.000 description 4
239000007943 implant Substances 0.000 description 4
238000002161 passivation Methods 0.000 description 4
238000004544 sputter deposition Methods 0.000 description 4
-1 4H-SiC) Chemical compound 0.000 description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
238000000137 annealing Methods 0.000 description 3
230000009467 reduction Effects 0.000 description 3
239000004065 semiconductor Substances 0.000 description 3
229910052709 silver Inorganic materials 0.000 description 3
150000003609 titanium compounds Chemical class 0.000 description 3
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
230000004913 activation Effects 0.000 description 2
229910045601 alloy Inorganic materials 0.000 description 2
239000000956 alloy Substances 0.000 description 2
229910052796 boron Inorganic materials 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
238000009792 diffusion process Methods 0.000 description 2
238000005530 etching Methods 0.000 description 2
238000001459 lithography Methods 0.000 description 2
229920002120 photoresistant polymer Polymers 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
239000004642 Polyimide Substances 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
230000009471 action Effects 0.000 description 1
238000005452 bending Methods 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
239000002800 charge carrier Substances 0.000 description 1
238000006731 degradation reaction Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
230000003116 impacting effect Effects 0.000 description 1
230000006872 improvement Effects 0.000 description 1
238000005224 laser annealing Methods 0.000 description 1
230000007774 longterm Effects 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
229920001721 polyimide Polymers 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
239000007858 starting material Substances 0.000 description 1
238000007669 thermal treatment Methods 0.000 description 1
229910021341 titanium silicide Inorganic materials 0.000 description 1
230000009466 transformation Effects 0.000 description 1
230000001131 transforming effect Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0495—Schottky electrodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Ceramic Engineering (AREA)
Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Manufacturing & Machinery (AREA)
Electrodes Of Semiconductors (AREA)
Ceramic Capacitors (AREA)
Ceramic Products (AREA)
Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)

IT102020000004696A 2020-03-05 2020-03-05 METODO DI FABBRICAZIONE DI UN DISPOSITIVO ELETTRONICO IN SiC CON FASI DI MANIPOLAZIONE RIDOTTE, E DISPOSITIVO ELETTRONICO IN SiC IT202000004696A1 (it)

Priority Applications (7)

Application Number	Priority Date	Filing Date	Title
IT102020000004696A IT202000004696A1 (it)	2020-03-05	2020-03-05	METODO DI FABBRICAZIONE DI UN DISPOSITIVO ELETTRONICO IN SiC CON FASI DI MANIPOLAZIONE RIDOTTE, E DISPOSITIVO ELETTRONICO IN SiC
JP2021030603A JP2021141322A (ja)	2020-03-05	2021-02-26	処理ステップを減少させたＳｉＣ電子装置の製造方法及びＳｉＣ電子装置
US17/190,722 US11784049B2 (en)	2020-03-05	2021-03-03	Method for manufacturing a sic electronic device with reduced handling steps, and sic electronic device
CN202110240820.8A CN113363153A (zh)	2020-03-05	2021-03-04	具有减少的处理步骤sic电子器件的制造方法和sic电子器件
CN202120471549.4U CN216719954U (zh)	2020-03-05	2021-03-04	电子器件和用于制造电子器件的***
EP21161040.7A EP3876263A1 (en)	2020-03-05	2021-03-05	Method for manufacturing a sic electronic device with reduced handling steps, and sic electronic device
US18/459,273 US20230411158A1 (en)	2020-03-05	2023-08-31	Method for manufacturing a sic electronic device with reduced handling steps, and sic electronic device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
IT102020000004696A IT202000004696A1 (it)	2020-03-05	2020-03-05	METODO DI FABBRICAZIONE DI UN DISPOSITIVO ELETTRONICO IN SiC CON FASI DI MANIPOLAZIONE RIDOTTE, E DISPOSITIVO ELETTRONICO IN SiC

Publications (1)

Publication Number	Publication Date
IT202000004696A1 true IT202000004696A1 (it)	2021-09-05

Family

ID=70480795

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT102020000004696A IT202000004696A1 (it)	2020-03-05	2020-03-05	METODO DI FABBRICAZIONE DI UN DISPOSITIVO ELETTRONICO IN SiC CON FASI DI MANIPOLAZIONE RIDOTTE, E DISPOSITIVO ELETTRONICO IN SiC

Country Status (5)

Country	Link
US (2)	US11784049B2 (zh)
EP (1)	EP3876263A1 (zh)
JP (1)	JP2021141322A (zh)
CN (2)	CN216719954U (zh)
IT (1)	IT202000004696A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN110265486B (zh) *	2019-06-20	2023-03-24	中国电子科技集团公司第十三研究所	氧化镓sbd终端结构及制备方法
IT202000008167A1 (it)	2020-04-17	2021-10-17	St Microelectronics Srl	Attivazione droganti e formazione di contatto ohmico in un dispositivo elettronico in sic, e dispositivo elettronico in sic

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20070066039A1 (en) *	2005-09-16	2007-03-22	Cree, Inc.	Methods of processing semiconductor wafers having silicon carbide power devices thereon
US20170170280A1 (en) *	2014-08-26	2017-06-15	Sumitomo Heavy Industries, Ltd.	Method and apparatus for manufacturing semiconductor element, and semiconductor element
US20180190651A1 (en) *	2017-01-04	2018-07-05	Infineon Technologies Ag	Semiconductor Device and Corresponding Manufacturing Method
US20200044031A1 (en) *	2018-08-02	2020-02-06	Semiconductor Components Industries, Llc	Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20050104072A1 (en)	2003-08-14	2005-05-19	Slater David B.Jr.	Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
DE102006050360B4 (de)	2006-10-25	2014-05-15	Infineon Technologies Austria Ag	Verfahren zum Erzeugen eines elektrischen Kontakts auf SiC
JP5175872B2 (ja)	2010-01-21	2013-04-03	株式会社東芝	半導体整流装置
DE202012013565U1 (de)	2011-07-20	2017-11-14	Sumitomo Electric Industries, Ltd.	Siliziumkarbidsubstrat und Halbleitervorrichtung
US8664665B2 (en)	2011-09-11	2014-03-04	Cree, Inc.	Schottky diode employing recesses for elements of junction barrier array
BR112015002569A2 (pt)	2012-08-08	2017-07-04	Koninklijke Philips Nv	sistema de fototerapia para um recém- nascido; método para controlar as fontes luminosas de um sistema de fototerapia; e sistema configurado para prover fototerapia
JP2014063948A (ja)	2012-09-24	2014-04-10	Sumitomo Electric Ind Ltd	炭化珪素半導体装置の製造方法
JP6135537B2 (ja)	2014-02-10	2017-05-31	トヨタ自動車株式会社	ＳｉＣ基板を利用する半導体装置とその製造方法
US8962468B1 (en)	2014-04-23	2015-02-24	United Silicon Carbide, Inc.	Formation of ohmic contacts on wide band gap semiconductors
CN204966510U (zh) *	2014-06-20	2016-01-13	意法半导体股份有限公司	宽带隙高密度半导体开关器件
CN109326657A (zh)	2018-08-29	2019-02-12	北京时代民芯科技有限公司	一种碳化硅基紫外探测器及其制备方法
CN109037041A (zh)	2018-09-21	2018-12-18	黄兴	一种碳化硅的欧姆接触的制备方法及器件
EP3712962B1 (en) *	2019-03-22	2023-06-07	STMicroelectronics S.r.l.	Semiconductor mps diode with reduced current-crowding effect and manufacturing method thereof
IT202000008179A1 (it)	2020-04-17	2021-10-17	St Microelectronics Srl	Formazione di contatti ohmici in un dispositivo elettronico basato su sic, e dispositivo elettronico
IT202000008167A1 (it)	2020-04-17	2021-10-17	St Microelectronics Srl	Attivazione droganti e formazione di contatto ohmico in un dispositivo elettronico in sic, e dispositivo elettronico in sic
IT202000015100A1 (it)	2020-06-23	2021-12-23	St Microelectronics Srl	Metodo di fabbricazione di un dispositivo rivelatore di una radiazione uv basato su sic e dispositivo rivelatore di una radiazione uv basato su sic

2020
- 2020-03-05 IT IT102020000004696A patent/IT202000004696A1/it unknown
2021
- 2021-02-26 JP JP2021030603A patent/JP2021141322A/ja active Pending
- 2021-03-03 US US17/190,722 patent/US11784049B2/en active Active
- 2021-03-04 CN CN202120471549.4U patent/CN216719954U/zh active Active
- 2021-03-04 CN CN202110240820.8A patent/CN113363153A/zh active Pending
- 2021-03-05 EP EP21161040.7A patent/EP3876263A1/en active Pending
2023
- 2023-08-31 US US18/459,273 patent/US20230411158A1/en active Pending

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20070066039A1 (en) *	2005-09-16	2007-03-22	Cree, Inc.	Methods of processing semiconductor wafers having silicon carbide power devices thereon
US20170170280A1 (en) *	2014-08-26	2017-06-15	Sumitomo Heavy Industries, Ltd.	Method and apparatus for manufacturing semiconductor element, and semiconductor element
US20180190651A1 (en) *	2017-01-04	2018-07-05	Infineon Technologies Ag	Semiconductor Device and Corresponding Manufacturing Method
US20200044031A1 (en) *	2018-08-02	2020-02-06	Semiconductor Components Industries, Llc	Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device

Also Published As

Publication number	Publication date
US20210280424A1 (en)	2021-09-09
US11784049B2 (en)	2023-10-10
CN216719954U (zh)	2022-06-10
JP2021141322A (ja)	2021-09-16
CN113363153A (zh)	2021-09-07
EP3876263A1 (en)	2021-09-08
US20230411158A1 (en)	2023-12-21

Publication	Publication Date	Title
JP5525940B2 (ja)	2014-06-18	半導体装置および半導体装置の製造方法
US10361274B2 (en)	2019-07-23	Silicon carbide semiconductor device having metal silicide surrounds a peripheral of metal carbide
US9825145B2 (en)	2017-11-21	Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology
JP5455973B2 (ja)	2014-03-26	炭化珪素半導体装置の製造方法
US9711599B2 (en)	2017-07-18	Wide bandgap high-density semiconductor switching device and manufacturing process thereof
US20230411158A1 (en)	2023-12-21	Method for manufacturing a sic electronic device with reduced handling steps, and sic electronic device
US10600921B2 (en)	2020-03-24	Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
US20120228734A1 (en)	2012-09-13	High breakdown voltage semiconductor rectifier
US20150287597A1 (en)	2015-10-08	Method for manufacturing silicon carbide semiconductor device
JP2011165902A (ja)	2011-08-25	半導体装置および半導体装置の製造方法
JP7225873B2 (ja)	2023-02-21	半導体装置及び半導体装置の製造方法
EP3896720A1 (en)	2021-10-20	Ohmic contact formation in a sic-based electronic device, and electronic device
US20170179235A1 (en)	2017-06-22	Semiconductor device and method of manufacturing semiconductor device
CN215220656U (zh)	2021-12-17	电子器件以及半导体器件
JP6648574B2 (ja)	2020-02-14	炭化珪素半導体装置の製造方法
JP2008210938A (ja)	2008-09-11	半導体装置およびその製造方法
CN115841947A (zh)	2023-03-24	结势垒二极管和肖特基二极管的形成以及mps器件
JP2004022796A (ja)	2004-01-22	炭化珪素半導体素子およびその形成方法
JP2005026408A (ja)	2005-01-27	半導体素子およびその製造方法
US12051725B2 (en)	2024-07-30	Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic device
US20230299148A1 (en)	2023-09-21	Forming an electronic device, such as a jbs or mps diode, based on 3c-sic, and 3c-sic electronic device
EP4246554A1 (en)	2023-09-20	Forming an electronic device, such as a jbs or mps diode, based on 3c-sic, and 3c-sic electronic device
CN116779659A (zh)	2023-09-19	形成基于3C－SiC的电子器件以及3C－SiC电子器件
CN116169184A (zh)	2023-05-26	碳化硅半导体装置的制造方法以及碳化硅半导体装置
JP2014150278A (ja)	2014-08-21	半導体装置および半導体装置の製造方法