IT1399075B1 - Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione - Google Patents

Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione

Info

Publication number
IT1399075B1
IT1399075B1 ITVA2010A000026A ITVA20100026A IT1399075B1 IT 1399075 B1 IT1399075 B1 IT 1399075B1 IT VA2010A000026 A ITVA2010A000026 A IT VA2010A000026A IT VA20100026 A ITVA20100026 A IT VA20100026A IT 1399075 B1 IT1399075 B1 IT 1399075B1
Authority
IT
Italy
Prior art keywords
geiger
mode
photodiods
photodiodo
photons
Prior art date
Application number
ITVA2010A000026A
Other languages
English (en)
Inventor
Giovanni Condorelli
Delfo Nunziato Sanfilippo
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITVA2010A000026A priority Critical patent/IT1399075B1/it
Priority to US13/053,595 priority patent/US8723100B2/en
Publication of ITVA20100026A1 publication Critical patent/ITVA20100026A1/it
Priority to US13/460,007 priority patent/US8860166B2/en
Application granted granted Critical
Publication of IT1399075B1 publication Critical patent/IT1399075B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
ITVA2010A000026A 2010-03-23 2010-03-23 Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione IT1399075B1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
ITVA2010A000026A IT1399075B1 (it) 2010-03-23 2010-03-23 Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione
US13/053,595 US8723100B2 (en) 2010-03-23 2011-03-22 Method of detecting impinging position of photons on a geiger-mode avalanche photodiode, related geiger-mode avalanche photodiode and fabrication process
US13/460,007 US8860166B2 (en) 2010-03-23 2012-04-30 Photo detector array of geiger mode avalanche photodiodes for computed tomography systems

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITVA2010A000026A IT1399075B1 (it) 2010-03-23 2010-03-23 Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione

Publications (2)

Publication Number Publication Date
ITVA20100026A1 ITVA20100026A1 (it) 2011-09-24
IT1399075B1 true IT1399075B1 (it) 2013-04-05

Family

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Family Applications (1)

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ITVA2010A000026A IT1399075B1 (it) 2010-03-23 2010-03-23 Metodo di rilevazione di posizioni di fotoni che impingono su un fotodiodo a valanga geiger-mode, relativi fotodiodi a valanga geiger-mode e processo di fabbricazione

Country Status (2)

Country Link
US (1) US8723100B2 (it)
IT (1) IT1399075B1 (it)

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JP7058479B2 (ja) 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器
CN116314222B (zh) * 2016-10-18 2024-05-14 索尼半导体解决方案公司 传感器
US10529884B2 (en) 2017-11-09 2020-01-07 LightSpin Technologies Inc. Virtual negative bevel and methods of isolating adjacent devices
WO2019098035A1 (ja) * 2017-11-15 2019-05-23 ソニーセミコンダクタソリューションズ株式会社 光検出素子およびその製造方法
JP7169071B2 (ja) * 2018-02-06 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器
US10636818B2 (en) * 2018-04-04 2020-04-28 Avago Technologies International Sales Pte. Limited Semiconductor device and sensor including a single photon avalanche diode (SPAD) structure
JP7129199B2 (ja) * 2018-04-11 2022-09-01 キヤノン株式会社 光検出装置、光検出システム及び移動体
JP6975110B2 (ja) 2018-09-13 2021-12-01 株式会社東芝 光検出素子、光検出システム、ライダー装置及び車
FR3089348B1 (fr) * 2018-11-30 2020-10-30 Commissariat Energie Atomique procede de fabrication d’une matrice de diodes a base de germanium et a faible courant d’obscurité
JP2020155503A (ja) * 2019-03-19 2020-09-24 株式会社東芝 光検出装置
DE102019204701A1 (de) * 2019-04-02 2020-10-08 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Photodioden-Array
US11251217B2 (en) * 2019-04-17 2022-02-15 ActLight SA Photodetector sensor arrays
EP3748698A1 (en) * 2019-06-03 2020-12-09 Ams Ag Semiconductor body, avalanche photodiode and method for fabricating a semiconductor body
EP3761376A1 (en) * 2019-07-01 2021-01-06 IMEC vzw Single-photon avalanche diode detector array
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JP2021135229A (ja) * 2020-02-28 2021-09-13 浜松ホトニクス株式会社 光検出装置
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Publication number Publication date
US8723100B2 (en) 2014-05-13
ITVA20100026A1 (it) 2011-09-24
US20110272561A1 (en) 2011-11-10

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