IT1305181B1 - Dispositivo e metodo di programmazione di celle di memoria nonvolatile con generazione automatica della tensione di programmazione. - Google Patents
Dispositivo e metodo di programmazione di celle di memoria nonvolatile con generazione automatica della tensione di programmazione.Info
- Publication number
- IT1305181B1 IT1305181B1 IT1998TO000961A ITTO980961A IT1305181B1 IT 1305181 B1 IT1305181 B1 IT 1305181B1 IT 1998TO000961 A IT1998TO000961 A IT 1998TO000961A IT TO980961 A ITTO980961 A IT TO980961A IT 1305181 B1 IT1305181 B1 IT 1305181B1
- Authority
- IT
- Italy
- Prior art keywords
- programming
- memory cells
- nonvolatile memory
- automatic generation
- programming voltage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1998TO000961A IT1305181B1 (it) | 1998-11-13 | 1998-11-13 | Dispositivo e metodo di programmazione di celle di memoria nonvolatile con generazione automatica della tensione di programmazione. |
US09/438,232 US6466481B1 (en) | 1998-11-13 | 1999-11-12 | Device and method for programming nonvolatile memory cells with automatic generation of programming voltage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1998TO000961A IT1305181B1 (it) | 1998-11-13 | 1998-11-13 | Dispositivo e metodo di programmazione di celle di memoria nonvolatile con generazione automatica della tensione di programmazione. |
Publications (2)
Publication Number | Publication Date |
---|---|
ITTO980961A1 ITTO980961A1 (it) | 2000-05-13 |
IT1305181B1 true IT1305181B1 (it) | 2001-04-10 |
Family
ID=11417182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT1998TO000961A IT1305181B1 (it) | 1998-11-13 | 1998-11-13 | Dispositivo e metodo di programmazione di celle di memoria nonvolatile con generazione automatica della tensione di programmazione. |
Country Status (2)
Country | Link |
---|---|
US (1) | US6466481B1 (it) |
IT (1) | IT1305181B1 (it) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4663094B2 (ja) * | 2000-10-13 | 2011-03-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2004335026A (ja) * | 2003-05-09 | 2004-11-25 | Sharp Corp | 電気的にプログラム可能でかつ電気的に消去可能な半導体記憶装置 |
KR100618836B1 (ko) * | 2004-06-19 | 2006-09-08 | 삼성전자주식회사 | 반도체 메모리 장치 및 반도체 메모리 장치의 프로그래밍방법 |
TWI288931B (en) * | 2004-06-19 | 2007-10-21 | Samsung Electronics Co Ltd | Phase-change memory element driver circuits using measurement to control current and methods of controlling drive current of phase-change memory elements using measurement |
US7656710B1 (en) | 2005-07-14 | 2010-02-02 | Sau Ching Wong | Adaptive operations for nonvolatile memories |
JP4408935B2 (ja) * | 2008-02-07 | 2010-02-03 | 日本テキサス・インスツルメンツ株式会社 | ドライバ回路 |
US8866512B2 (en) * | 2011-02-18 | 2014-10-21 | System General Corp. | Feedback terminal of power converter having programming function for parameter setting |
US10734083B2 (en) | 2017-10-13 | 2020-08-04 | Ememory Technology Inc. | Voltage driver for memory |
WO2023019497A1 (en) * | 2021-08-19 | 2023-02-23 | Yangtze Advanced Memory Industrial Innovation Center Co., Ltd | Memory device and controlling method thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5748534A (en) * | 1996-03-26 | 1998-05-05 | Invox Technology | Feedback loop for reading threshold voltage |
US5841695A (en) * | 1997-05-29 | 1998-11-24 | Lsi Logic Corporation | Memory system using multiple storage mechanisms to enable storage and retrieval of more than two states in a memory cell |
US6194967B1 (en) * | 1998-06-17 | 2001-02-27 | Intel Corporation | Current mirror circuit |
-
1998
- 1998-11-13 IT IT1998TO000961A patent/IT1305181B1/it active
-
1999
- 1999-11-12 US US09/438,232 patent/US6466481B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ITTO980961A1 (it) | 2000-05-13 |
US6466481B1 (en) | 2002-10-15 |
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