IT1305181B1 - Dispositivo e metodo di programmazione di celle di memoria nonvolatile con generazione automatica della tensione di programmazione. - Google Patents

Dispositivo e metodo di programmazione di celle di memoria nonvolatile con generazione automatica della tensione di programmazione.

Info

Publication number
IT1305181B1
IT1305181B1 IT1998TO000961A ITTO980961A IT1305181B1 IT 1305181 B1 IT1305181 B1 IT 1305181B1 IT 1998TO000961 A IT1998TO000961 A IT 1998TO000961A IT TO980961 A ITTO980961 A IT TO980961A IT 1305181 B1 IT1305181 B1 IT 1305181B1
Authority
IT
Italy
Prior art keywords
programming
memory cells
nonvolatile memory
automatic generation
programming voltage
Prior art date
Application number
IT1998TO000961A
Other languages
English (en)
Inventor
Roberto Canegallo
Marco Pasotti
Pier Luigi Rolandi
Giovanni Guaitini
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1998TO000961A priority Critical patent/IT1305181B1/it
Priority to US09/438,232 priority patent/US6466481B1/en
Publication of ITTO980961A1 publication Critical patent/ITTO980961A1/it
Application granted granted Critical
Publication of IT1305181B1 publication Critical patent/IT1305181B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
IT1998TO000961A 1998-11-13 1998-11-13 Dispositivo e metodo di programmazione di celle di memoria nonvolatile con generazione automatica della tensione di programmazione. IT1305181B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1998TO000961A IT1305181B1 (it) 1998-11-13 1998-11-13 Dispositivo e metodo di programmazione di celle di memoria nonvolatile con generazione automatica della tensione di programmazione.
US09/438,232 US6466481B1 (en) 1998-11-13 1999-11-12 Device and method for programming nonvolatile memory cells with automatic generation of programming voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1998TO000961A IT1305181B1 (it) 1998-11-13 1998-11-13 Dispositivo e metodo di programmazione di celle di memoria nonvolatile con generazione automatica della tensione di programmazione.

Publications (2)

Publication Number Publication Date
ITTO980961A1 ITTO980961A1 (it) 2000-05-13
IT1305181B1 true IT1305181B1 (it) 2001-04-10

Family

ID=11417182

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1998TO000961A IT1305181B1 (it) 1998-11-13 1998-11-13 Dispositivo e metodo di programmazione di celle di memoria nonvolatile con generazione automatica della tensione di programmazione.

Country Status (2)

Country Link
US (1) US6466481B1 (it)
IT (1) IT1305181B1 (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4663094B2 (ja) * 2000-10-13 2011-03-30 株式会社半導体エネルギー研究所 半導体装置
JP2004335026A (ja) * 2003-05-09 2004-11-25 Sharp Corp 電気的にプログラム可能でかつ電気的に消去可能な半導体記憶装置
KR100618836B1 (ko) * 2004-06-19 2006-09-08 삼성전자주식회사 반도체 메모리 장치 및 반도체 메모리 장치의 프로그래밍방법
TWI288931B (en) * 2004-06-19 2007-10-21 Samsung Electronics Co Ltd Phase-change memory element driver circuits using measurement to control current and methods of controlling drive current of phase-change memory elements using measurement
US7656710B1 (en) 2005-07-14 2010-02-02 Sau Ching Wong Adaptive operations for nonvolatile memories
JP4408935B2 (ja) * 2008-02-07 2010-02-03 日本テキサス・インスツルメンツ株式会社 ドライバ回路
US8866512B2 (en) * 2011-02-18 2014-10-21 System General Corp. Feedback terminal of power converter having programming function for parameter setting
US10734083B2 (en) 2017-10-13 2020-08-04 Ememory Technology Inc. Voltage driver for memory
WO2023019497A1 (en) * 2021-08-19 2023-02-23 Yangtze Advanced Memory Industrial Innovation Center Co., Ltd Memory device and controlling method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5748534A (en) * 1996-03-26 1998-05-05 Invox Technology Feedback loop for reading threshold voltage
US5841695A (en) * 1997-05-29 1998-11-24 Lsi Logic Corporation Memory system using multiple storage mechanisms to enable storage and retrieval of more than two states in a memory cell
US6194967B1 (en) * 1998-06-17 2001-02-27 Intel Corporation Current mirror circuit

Also Published As

Publication number Publication date
ITTO980961A1 (it) 2000-05-13
US6466481B1 (en) 2002-10-15

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