IT1311441B1 - Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello. - Google Patents

Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello.

Info

Publication number
IT1311441B1
IT1311441B1 IT1999TO000994A ITTO990994A IT1311441B1 IT 1311441 B1 IT1311441 B1 IT 1311441B1 IT 1999TO000994 A IT1999TO000994 A IT 1999TO000994A IT TO990994 A ITTO990994 A IT TO990994A IT 1311441 B1 IT1311441 B1 IT 1311441B1
Authority
IT
Italy
Prior art keywords
programming
memory cells
volatile memory
voltage generator
programmable voltage
Prior art date
Application number
IT1999TO000994A
Other languages
English (en)
Inventor
Osama Khouri
Rino Micheloni
Andrea Sacco
Guido Torelli
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1999TO000994A priority Critical patent/IT1311441B1/it
Publication of ITTO990994A0 publication Critical patent/ITTO990994A0/it
Priority to US09/714,852 priority patent/US6650173B1/en
Publication of ITTO990994A1 publication Critical patent/ITTO990994A1/it
Application granted granted Critical
Publication of IT1311441B1 publication Critical patent/IT1311441B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Analogue/Digital Conversion (AREA)
IT1999TO000994A 1999-11-16 1999-11-16 Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello. IT1311441B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1999TO000994A IT1311441B1 (it) 1999-11-16 1999-11-16 Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello.
US09/714,852 US6650173B1 (en) 1999-11-16 2000-11-15 Programmable voltage generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999TO000994A IT1311441B1 (it) 1999-11-16 1999-11-16 Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello.

Publications (3)

Publication Number Publication Date
ITTO990994A0 ITTO990994A0 (it) 1999-11-16
ITTO990994A1 ITTO990994A1 (it) 2001-05-16
IT1311441B1 true IT1311441B1 (it) 2002-03-12

Family

ID=11418219

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999TO000994A IT1311441B1 (it) 1999-11-16 1999-11-16 Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello.

Country Status (2)

Country Link
US (1) US6650173B1 (it)
IT (1) IT1311441B1 (it)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6879131B2 (en) * 2003-04-03 2005-04-12 Cirrus Logic, Inc. Minimizing end boundary resistance in a programmable resistor of an integrated circuit
US7118273B1 (en) 2003-04-10 2006-10-10 Transmeta Corporation System for on-chip temperature measurement in integrated circuits
KR100545711B1 (ko) * 2003-07-29 2006-01-24 주식회사 하이닉스반도체 퓨즈트리밍을 이용하여 다양한 레벨의 기준전압을 출력할수 있는 기준전압 발생회로
CN1910536A (zh) * 2004-01-21 2007-02-07 皇家飞利浦电子股份有限公司 电压调节器电路装置
US7417459B2 (en) * 2005-04-06 2008-08-26 Intel Corporation On-die offset reference circuit block
JP4658786B2 (ja) * 2005-11-30 2011-03-23 株式会社日立製作所 電源装置
US20070296384A1 (en) * 2006-06-26 2007-12-27 Semiconductor Components Industries, Llc. Method of forming a feedback network and structure therefor
KR100890042B1 (ko) * 2006-12-29 2009-03-25 주식회사 하이닉스반도체 입력 버퍼 회로
US20080246537A1 (en) * 2007-04-03 2008-10-09 Broadcom Corporation Programmable discontinuity resistors for reference ladders
JP2009217809A (ja) * 2008-02-12 2009-09-24 Seiko Epson Corp 基準電圧生成回路、集積回路装置および信号処理装置
JP4565283B2 (ja) * 2008-06-10 2010-10-20 マイクロン テクノロジー， インク． 電圧調整系
US8471624B2 (en) * 2008-07-17 2013-06-25 International Business Machines Corporation Method for controlling the supply voltage for an integrated circuit and an apparatus with a voltage regulation module and an integrated circuit
US7920011B1 (en) * 2009-09-16 2011-04-05 Himax Analogic, Inc. Voltage trimming circuit
KR101094401B1 (ko) * 2010-03-31 2011-12-15 주식회사 하이닉스반도체 반도체 집적회로의 내부전압 발생기
CN102213967A (zh) * 2010-04-12 2011-10-12 辉达公司 具有电压调节功能的gpu芯片及其制作方法
WO2012077041A2 (en) * 2010-12-10 2012-06-14 Sendyne Corp. Voltage reference and temperature sensor
JP6284295B2 (ja) * 2012-09-14 2018-02-28 エイブリック株式会社 分圧回路
KR101985934B1 (ko) * 2012-11-23 2019-06-05 엘지디스플레이 주식회사 Ｐｗｍ 방식의 ｄｃ-ｄｃ 변환기
CN103116378B (zh) * 2013-01-11 2014-12-10 北京经纬恒润科技有限公司 一种可变电阻模拟电路
US9000837B1 (en) 2013-11-05 2015-04-07 International Business Machines Corporation Adjustable reference voltage generator for single-ended DRAM sensing devices
CN104318881B (zh) * 2014-11-10 2017-06-23 京东方科技集团股份有限公司 一种阻抗测试电路、集成驱动电路和显示装置
US9886047B2 (en) * 2015-05-01 2018-02-06 Rohm Co., Ltd. Reference voltage generation circuit including resistor arrangements
JP6578757B2 (ja) * 2015-06-23 2019-09-25 セイコーエプソン株式会社 電源電圧検出回路、半導体集積回路装置、及び、電子機器
US20170359033A1 (en) * 2016-06-14 2017-12-14 Macom Technology Solutions Holdings, Inc. Circuits and operating methods thereof for monitoring and protecting a device
US10637460B2 (en) 2016-06-14 2020-04-28 Macom Technology Solutions Holdings, Inc. Circuits and operating methods thereof for monitoring and protecting a device
JP6689152B2 (ja) * 2016-07-21 2020-04-28 ルネサスエレクトロニクス株式会社 半導体装置
US20180109228A1 (en) 2016-10-14 2018-04-19 MACOM Technology Solution Holdings, Inc. Phase shifters for gallium nitride amplifiers and related methods
US20190028066A1 (en) 2017-07-24 2019-01-24 Macom Technology Solutions Holdings, Inc. Fet operational temperature determination by field plate resistance thermometry
US20190028065A1 (en) 2017-07-24 2019-01-24 Macom Technology Solutions Holdings, Inc. Fet operational temperature determination by gate structure resistance thermometry
US11025229B2 (en) * 2019-02-18 2021-06-01 Texas Instruments Incorporated Compensation for binary weighted divider
KR20220029118A (ko) 2020-09-01 2022-03-08 삼성전자주식회사 전압 생성 회로 및 이를 포함하는 메모리 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2542745C2 (de) * 1975-09-25 1983-06-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verstärker mit veränderbarem Übertragungsmaß, insbesondere für ein Kompander-System
US4070632A (en) * 1976-09-22 1978-01-24 Tuttle John R Discrete-gain output limiter
JP3222507B2 (ja) * 1991-10-16 2001-10-29 富士通株式会社 電圧減衰量の調節回路
US5245229A (en) * 1992-02-28 1993-09-14 Media Vision Digitally controlled integrated circuit anti-clipping mixer
JPH05327376A (ja) * 1992-05-20 1993-12-10 Fujitsu Ltd ディジタル制御可変利得回路
JPH0661766A (ja) * 1992-08-04 1994-03-04 Nec Corp 出力バッファアンプ回路
JP2531104B2 (ja) * 1993-08-02 1996-09-04 日本電気株式会社 基準電位発生回路
US5694366A (en) * 1996-05-01 1997-12-02 Micron Quantum Devices, Inc. OP amp circuit with variable resistance and memory system including same
FR2749453B1 (fr) * 1996-05-31 1998-09-04 Sgs Thomson Microelectronics Filtre audio analogique pour frequences aigues
US5793249A (en) * 1996-09-30 1998-08-11 Advanced Micro Devices, Inc. System for providing tight program/erase speeds that are insensitive to process variations
US5852360A (en) * 1997-04-18 1998-12-22 Exar Corporation Programmable low drift reference voltage generator
US5917311A (en) * 1998-02-23 1999-06-29 Analog Devices, Inc. Trimmable voltage regulator feedback network
JP3677181B2 (ja) * 1999-09-06 2005-07-27 株式会社東芝 可変抵抗回路及びｄ／ａ変換器
KR100676354B1 (ko) * 2000-03-02 2007-01-31 산요덴키가부시키가이샤 가변 저항 회로, 연산 증폭 회로, 반도체 집적 회로,시상수 전환 회로 및 파형 성형 회로

Also Published As

Publication number Publication date
ITTO990994A0 (it) 1999-11-16
ITTO990994A1 (it) 2001-05-16
US6650173B1 (en) 2003-11-18

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