IT1272657B - Circuito livellatore per livellare una tensione di riferimento ad un livello predeterminato - Google Patents
Circuito livellatore per livellare una tensione di riferimento ad un livello predeterminatoInfo
- Publication number
- IT1272657B IT1272657B ITMI932025A ITMI932025A IT1272657B IT 1272657 B IT1272657 B IT 1272657B IT MI932025 A ITMI932025 A IT MI932025A IT MI932025 A ITMI932025 A IT MI932025A IT 1272657 B IT1272657 B IT 1272657B
- Authority
- IT
- Italy
- Prior art keywords
- circuit
- leveling
- level
- constant current
- reference voltage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Dram (AREA)
- Control Of Electrical Variables (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
- Semiconductor Memories (AREA)
Abstract
Un circuito livellatore include un circuito a corrente costante includente una sorgente di corrente costante (5) e un circuito a specchio di corrente (3, 4), una resistenza regolabile (2) ricevente una corrente costante dal circuito a corrente costante e un transistore MOS di livellamento (1) che riceve una tensione generata dalla resistenza regolabile alla sua porta per regolare una corrente che fluisce attraverso un nodo livellatore (200). E' possibile rendere rapida una caratteristica corrente-tensione del circuito livellatore e settare un potenziale di livellamento arbitrario.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4252850A JPH06104672A (ja) | 1992-09-22 | 1992-09-22 | クランプ回路 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI932025A0 ITMI932025A0 (it) | 1993-09-21 |
ITMI932025A1 ITMI932025A1 (it) | 1995-03-21 |
IT1272657B true IT1272657B (it) | 1997-06-26 |
Family
ID=17243048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI932025A IT1272657B (it) | 1992-09-22 | 1993-09-21 | Circuito livellatore per livellare una tensione di riferimento ad un livello predeterminato |
Country Status (5)
Country | Link |
---|---|
US (1) | US5436552A (it) |
JP (1) | JPH06104672A (it) |
KR (1) | KR970006622B1 (it) |
DE (1) | DE4331895C2 (it) |
IT (1) | IT1272657B (it) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE40552E1 (en) | 1990-04-06 | 2008-10-28 | Mosaid Technologies, Inc. | Dynamic random access memory using imperfect isolating transistors |
JP3304539B2 (ja) | 1993-08-31 | 2002-07-22 | 富士通株式会社 | 基準電圧発生回路 |
DE69325809T2 (de) * | 1993-11-24 | 1999-12-09 | St Microelectronics Srl | Nicht-flüchtige Speicheranordnung mit Mitteln zur Erzeugung negativer Programmierspannungen |
KR0153542B1 (ko) * | 1993-11-26 | 1998-10-15 | 김광호 | 반도체 집적장치의 기준전압 발생회로 |
JPH07191769A (ja) * | 1993-12-27 | 1995-07-28 | Toshiba Corp | 基準電流発生回路 |
JP3626521B2 (ja) | 1994-02-28 | 2005-03-09 | 三菱電機株式会社 | 基準電位発生回路、電位検出回路および半導体集積回路装置 |
DE4429715C1 (de) * | 1994-08-22 | 1996-05-02 | Siemens Ag | Schaltungsanordnung zur Spannungsbegrenzung |
JP3207680B2 (ja) * | 1994-08-30 | 2001-09-10 | 株式会社東芝 | 半導体集積回路 |
US5920734A (en) * | 1996-02-01 | 1999-07-06 | Microsoft Corporation | System for providing electrical power to a computer input device according to the interface types through the shared use of wires and a voltage clamp |
US5856749A (en) * | 1996-11-01 | 1999-01-05 | Burr-Brown Corporation | Stable output bias current circuitry and method for low-impedance CMOS output stage |
DE19821906C1 (de) * | 1998-05-15 | 2000-03-02 | Siemens Ag | Klemmschaltung |
JP2001014877A (ja) * | 1999-06-25 | 2001-01-19 | Mitsubishi Electric Corp | 電圧発生回路およびそれを備えた半導体記憶装置 |
JP4571719B2 (ja) * | 1999-09-20 | 2010-10-27 | 旭化成エレクトロニクス株式会社 | 非線形回路 |
EP1280033B1 (en) * | 2001-07-26 | 2006-05-31 | AMI Semiconductor Belgium BVBA | EMC immune low drop regulator |
KR100507701B1 (ko) | 2001-12-06 | 2005-08-09 | 주식회사 하이닉스반도체 | 부스트랩 회로 |
EP1456926B1 (en) * | 2001-12-14 | 2013-03-27 | STMicroelectronics Asia Pacific Pte Ltd. | Transient voltage clamping circuit |
JP2005038909A (ja) * | 2003-07-15 | 2005-02-10 | Fujio Masuoka | 不揮発性メモリ素子の駆動方法、半導体記憶装置及びそれを備えてなる液晶表示装置 |
TW200525867A (en) * | 2004-01-21 | 2005-08-01 | Renesas Tech Corp | Voltage clamp circuit, switching power supply apparatus, semiconductor IC device, and voltage level converting circuit |
WO2006051615A1 (ja) * | 2004-11-15 | 2006-05-18 | Nanopower Solutions, Inc. | 直流安定化電源回路 |
JP4569418B2 (ja) * | 2004-12-07 | 2010-10-27 | 株式会社デンソー | モータ駆動回路 |
TWI467702B (zh) | 2005-03-28 | 2015-01-01 | Semiconductor Energy Lab | 記憶裝置和其製造方法 |
US7380042B2 (en) * | 2005-11-22 | 2008-05-27 | Dell Products L.P. | Method of detecting and monitoring master device communication on system bus |
US7423476B2 (en) * | 2006-09-25 | 2008-09-09 | Micron Technology, Inc. | Current mirror circuit having drain-source voltage clamp |
US20120002332A1 (en) | 2010-06-30 | 2012-01-05 | Riley Joseph D | Overvoltage circuit, and motor starter, overload relay and low-power system including the same |
US8278995B1 (en) | 2011-01-12 | 2012-10-02 | National Semiconductor Corporation | Bandgap in CMOS DGO process |
US8315111B2 (en) * | 2011-01-21 | 2012-11-20 | Nxp B.V. | Voltage regulator with pre-charge circuit |
JP2013097551A (ja) * | 2011-10-31 | 2013-05-20 | Seiko Instruments Inc | 定電流回路及び基準電圧回路 |
CN102624229B (zh) * | 2012-03-31 | 2016-05-11 | 上海华虹宏力半导体制造有限公司 | 升压电路以及集成电路 |
CN105892540B (zh) * | 2014-11-04 | 2018-11-13 | 恩智浦美国有限公司 | 电压钳位电路 |
CN108334153B (zh) * | 2017-01-17 | 2019-07-26 | 京东方科技集团股份有限公司 | 一种电流镜电路 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2813073C2 (de) * | 1978-03-25 | 1984-07-26 | Telefunken electronic GmbH, 7100 Heilbronn | Diskriminator-Schaltung |
JPS6451813A (en) * | 1987-08-24 | 1989-02-28 | Ricoh Kk | Output voltage limit circuit |
US4926065A (en) * | 1987-11-17 | 1990-05-15 | Applied Micro Circuits Corporation | Method and apparatus for coupling an ECL output signal using a clamped capacitive bootstrap circuit |
US4874967A (en) * | 1987-12-15 | 1989-10-17 | Xicor, Inc. | Low power voltage clamp circuit |
JPH01216675A (ja) * | 1988-02-24 | 1989-08-30 | Toshiba Corp | クランプ回路 |
JPH01311711A (ja) * | 1988-06-10 | 1989-12-15 | Mitsubishi Electric Corp | クリップ回路 |
KR920004587B1 (ko) * | 1989-10-24 | 1992-06-11 | 삼성전자 주식회사 | 메모리장치의 기준전압 안정화회로 |
US5132936A (en) * | 1989-12-14 | 1992-07-21 | Cypress Semiconductor Corporation | MOS memory circuit with fast access time |
JP3068146B2 (ja) * | 1990-01-08 | 2000-07-24 | 日本電気株式会社 | 半導体集積回路 |
KR920010633A (ko) * | 1990-11-30 | 1992-06-26 | 김광호 | 반도체 메모리 장치의 기준전압 발생회로 |
JP2614943B2 (ja) * | 1991-01-25 | 1997-05-28 | 日本電気アイシーマイコンシステム株式会社 | 定電圧発生回路 |
US5311071A (en) * | 1991-10-21 | 1994-05-10 | Silicon Systems, Inc. | High speed threshold crossing detector with reset |
-
1992
- 1992-09-22 JP JP4252850A patent/JPH06104672A/ja active Pending
-
1993
- 1993-09-20 DE DE4331895A patent/DE4331895C2/de not_active Expired - Fee Related
- 1993-09-21 IT ITMI932025A patent/IT1272657B/it active IP Right Grant
- 1993-09-21 KR KR1019930019179A patent/KR970006622B1/ko not_active IP Right Cessation
- 1993-09-21 US US08/123,964 patent/US5436552A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH06104672A (ja) | 1994-04-15 |
KR970006622B1 (ko) | 1997-04-29 |
DE4331895C2 (de) | 1998-11-26 |
ITMI932025A1 (it) | 1995-03-21 |
ITMI932025A0 (it) | 1993-09-21 |
KR940008236A (ko) | 1994-04-29 |
DE4331895A1 (de) | 1994-03-31 |
US5436552A (en) | 1995-07-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19960927 |