IT1271478B - Circuito stabilizzato di generazione della tensione e convertitore in riduzione della tensione interna - Google Patents

Circuito stabilizzato di generazione della tensione e convertitore in riduzione della tensione interna

Info

Publication number
IT1271478B
IT1271478B ITMI932145A ITMI932145A IT1271478B IT 1271478 B IT1271478 B IT 1271478B IT MI932145 A ITMI932145 A IT MI932145A IT MI932145 A ITMI932145 A IT MI932145A IT 1271478 B IT1271478 B IT 1271478B
Authority
IT
Italy
Prior art keywords
generation circuit
reduction converter
voltage generation
stabilized
internal voltage
Prior art date
Application number
ITMI932145A
Other languages
English (en)
Inventor
Takeshi Kajimoto
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of ITMI932145A0 publication Critical patent/ITMI932145A0/it
Publication of ITMI932145A1 publication Critical patent/ITMI932145A1/it
Application granted granted Critical
Publication of IT1271478B publication Critical patent/IT1271478B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
ITMI932145A 1992-10-12 1993-10-08 Circuito stabilizzato di generazione della tensione e convertitore in riduzione della tensione interna IT1271478B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04272775A JP3085562B2 (ja) 1992-10-12 1992-10-12 基準電圧発生回路および内部降圧回路

Publications (3)

Publication Number Publication Date
ITMI932145A0 ITMI932145A0 (it) 1993-10-08
ITMI932145A1 ITMI932145A1 (it) 1995-04-08
IT1271478B true IT1271478B (it) 1997-05-28

Family

ID=17518577

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI932145A IT1271478B (it) 1992-10-12 1993-10-08 Circuito stabilizzato di generazione della tensione e convertitore in riduzione della tensione interna

Country Status (5)

Country Link
US (1) US5557193A (it)
JP (1) JP3085562B2 (it)
KR (1) KR960003535B1 (it)
DE (1) DE4333767A1 (it)
IT (1) IT1271478B (it)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3274306B2 (ja) 1995-01-20 2002-04-15 株式会社東芝 半導体集積回路装置
US6292424B1 (en) 1995-01-20 2001-09-18 Kabushiki Kaisha Toshiba DRAM having a power supply voltage lowering circuit
EP0749196A3 (en) * 1995-02-22 1997-07-30 Seiko Instr Inc Power supply apparatus and electronic equipment comprising the same
JP3369807B2 (ja) 1995-08-30 2003-01-20 株式会社東芝 半導体装置
JP3732884B2 (ja) * 1996-04-22 2006-01-11 株式会社ルネサステクノロジ 内部電源電圧発生回路、内部電圧発生回路および半導体装置
US5764040A (en) * 1996-09-24 1998-06-09 Intel Corporation Transient tolerant power supply method and apparatus
US5764041A (en) * 1997-02-11 1998-06-09 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiornio Short circuit limitation current for power transistors
JP2000047740A (ja) * 1998-07-29 2000-02-18 Mitsubishi Electric Corp 電圧補助回路および半導体集積回路装置
JP2000155617A (ja) * 1998-11-19 2000-06-06 Mitsubishi Electric Corp 内部電圧発生回路
KR100319606B1 (ko) 1999-02-12 2002-01-05 김영환 전압 강압 회로
US6433622B1 (en) * 2000-08-17 2002-08-13 Koninklijke Philips Electronics N.V. Voltage stabilized low level driver
US6479972B1 (en) * 2000-09-11 2002-11-12 Elite Semiconductor Memory Technology Inc. Voltage regulator for supplying power to internal circuits
JP4623248B2 (ja) * 2000-11-28 2011-02-02 ミツミ電機株式会社 シリーズレギュレータ用ｉｃ
US7019583B2 (en) * 2001-01-29 2006-03-28 Axiohm Transaction Solutions, Inc. Current inrush limiting circuit
JP3927788B2 (ja) * 2001-11-01 2007-06-13 株式会社ルネサステクノロジ 半導体装置
JP4029812B2 (ja) * 2003-09-08 2008-01-09 ソニー株式会社 定電圧電源回路
US6861830B1 (en) * 2003-10-22 2005-03-01 Aimtron Technology Corp. Method of improving transient noise of a switching DC-to-DC converter with multiple output voltages
KR100734315B1 (ko) * 2006-02-14 2007-07-02 삼성전자주식회사 전압발생기
CN101647181B (zh) * 2006-12-30 2012-08-29 先进模拟科技公司 Dc/dc电压转换器
US7786712B2 (en) * 2006-12-30 2010-08-31 Advanced Analogic Technologies, Inc. High-efficiency DC/DC voltage converter including up inductive switching pre-regulator and capacitive switching post-converter
US7777459B2 (en) * 2006-12-30 2010-08-17 Advanced Analogic Technologies, Inc. High-efficiency DC/DC voltage converter including capacitive switching pre-converter and down inductive switching post-regulator
US8212541B2 (en) 2008-05-08 2012-07-03 Massachusetts Institute Of Technology Power converter with capacitive energy transfer and fast dynamic response
JP2010193431A (ja) * 2009-01-26 2010-09-02 Rohm Co Ltd 出力回路およびモータ駆動装置
US8116139B2 (en) 2010-01-29 2012-02-14 Sandisk Technologies Inc. Bit line stability detection
US8415936B2 (en) * 2010-07-19 2013-04-09 Intersil Americas Inc. Multiphase DC-DC converter using zero voltage switching
US10389235B2 (en) 2011-05-05 2019-08-20 Psemi Corporation Power converter
US9882471B2 (en) 2011-05-05 2018-01-30 Peregrine Semiconductor Corporation DC-DC converter with modular stages
US10680515B2 (en) 2011-05-05 2020-06-09 Psemi Corporation Power converters with modular stages
EP2705597B1 (en) 2011-05-05 2018-08-15 Arctic Sand Technologies Inc. Dc-dc converter with modular stages
EP2825928B1 (en) 2012-03-16 2019-11-13 Intel Corporation A low-impedance reference voltage generator
US8619445B1 (en) 2013-03-15 2013-12-31 Arctic Sand Technologies, Inc. Protection of switched capacitor power converter
US9660520B2 (en) 2013-04-09 2017-05-23 Massachusetts Institute Of Technology Method and apparatus to provide power conversion with high power factor
US9825545B2 (en) 2013-10-29 2017-11-21 Massachusetts Institute Of Technology Switched-capacitor split drive transformer power conversion circuit
WO2016004427A1 (en) 2014-07-03 2016-01-07 Massachusetts Institute Of Technology High-frequency, high-density power factor correction conversion for universal input grid interface
US10193441B2 (en) 2015-03-13 2019-01-29 Psemi Corporation DC-DC transformer with inductor for the facilitation of adiabatic inter-capacitor charge transport
CN109634344A (zh) * 2017-03-08 2019-04-16 长江存储科技有限责任公司 一种高带宽低压差线性稳压器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4928056A (en) * 1988-10-06 1990-05-22 National Semiconductor Corporation Stabilized low dropout voltage regulator circuit
IT1227731B (it) * 1988-12-28 1991-05-06 Sgs Thomson Microelectronics Stabilizzatore di tensione a bassissima caduta di tensione, atto a sopportare transitori di tensione elevata
JP3102490B2 (ja) * 1990-05-11 2000-10-23 株式会社日立製作所 半導体装置
JP2632112B2 (ja) * 1992-07-27 1997-07-23 三菱電機株式会社 電圧発生回路

Also Published As

Publication number Publication date
KR940010104A (ko) 1994-05-24
KR960003535B1 (ko) 1996-03-14
DE4333767A1 (de) 1994-04-14
JPH06124590A (ja) 1994-05-06
JP3085562B2 (ja) 2000-09-11
US5557193A (en) 1996-09-17
ITMI932145A1 (it) 1995-04-08
ITMI932145A0 (it) 1993-10-08

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971028