IT1226557B - Circuito di controllo della tensione di bloccaggio di un carico induttivo pilotato con un dispositivo di potenza in configurazione "high side driver" - Google Patents

Circuito di controllo della tensione di bloccaggio di un carico induttivo pilotato con un dispositivo di potenza in configurazione "high side driver"

Info

Publication number
IT1226557B
IT1226557B IT8821561A IT2156188A IT1226557B IT 1226557 B IT1226557 B IT 1226557B IT 8821561 A IT8821561 A IT 8821561A IT 2156188 A IT2156188 A IT 2156188A IT 1226557 B IT1226557 B IT 1226557B
Authority
IT
Italy
Prior art keywords
checking
configuration
circuit
power device
high side
Prior art date
Application number
IT8821561A
Other languages
English (en)
Other versions
IT8821561A0 (it
Inventor
Michele Zisa
Sergio Palara
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8821561A priority Critical patent/IT1226557B/it
Publication of IT8821561A0 publication Critical patent/IT8821561A0/it
Priority to EP89201475A priority patent/EP0352828B1/en
Priority to DE68924107T priority patent/DE68924107T2/de
Priority to US07/364,174 priority patent/US5010439A/en
Priority to JP1186175A priority patent/JPH0275222A/ja
Priority to KR1019890010722A priority patent/KR900002568A/ko
Application granted granted Critical
Publication of IT1226557B publication Critical patent/IT1226557B/it

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03LAUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L5/00Automatic control of voltage, current, or power
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
IT8821561A 1988-07-29 1988-07-29 Circuito di controllo della tensione di bloccaggio di un carico induttivo pilotato con un dispositivo di potenza in configurazione "high side driver" IT1226557B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT8821561A IT1226557B (it) 1988-07-29 1988-07-29 Circuito di controllo della tensione di bloccaggio di un carico induttivo pilotato con un dispositivo di potenza in configurazione "high side driver"
EP89201475A EP0352828B1 (en) 1988-07-29 1989-06-08 Control circuit for the clamping voltage of an inductive load drive by a power device in a high side driver configuration
DE68924107T DE68924107T2 (de) 1988-07-29 1989-06-08 Steuerschaltung für die Begrenzungsspannung einer durch eine Leistungsvorrichtung in spannungsseitiger Treiberkonfiguration getriebenen induktiven Last.
US07/364,174 US5010439A (en) 1988-07-29 1989-06-12 Control circuit for the clamping voltage of an inductive load driven by a power device in a high side driver configuration
JP1186175A JPH0275222A (ja) 1988-07-29 1989-07-20 クランプ電圧用制御回路
KR1019890010722A KR900002568A (ko) 1988-07-29 1989-07-28 고 측면 구동기 구성내의 전력 장치에 의해 구동되는 유도성 부하의 클램핑 전압용 제어 회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8821561A IT1226557B (it) 1988-07-29 1988-07-29 Circuito di controllo della tensione di bloccaggio di un carico induttivo pilotato con un dispositivo di potenza in configurazione "high side driver"

Publications (2)

Publication Number Publication Date
IT8821561A0 IT8821561A0 (it) 1988-07-29
IT1226557B true IT1226557B (it) 1991-01-24

Family

ID=11183627

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8821561A IT1226557B (it) 1988-07-29 1988-07-29 Circuito di controllo della tensione di bloccaggio di un carico induttivo pilotato con un dispositivo di potenza in configurazione "high side driver"

Country Status (6)

Country Link
US (1) US5010439A (it)
EP (1) EP0352828B1 (it)
JP (1) JPH0275222A (it)
KR (1) KR900002568A (it)
DE (1) DE68924107T2 (it)
IT (1) IT1226557B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130883A (en) * 1990-02-26 1992-07-14 Motorola, Inc. Circuit for overvoltage protection
JPH04170815A (ja) * 1990-11-05 1992-06-18 Nissan Motor Co Ltd ハイサイド・スイッチ回路及び半導体装置
DE59009841D1 (de) * 1990-11-09 1995-12-07 Siemens Ag MOSFET-Schalter für eine induktive Last.
JPH04364784A (ja) * 1991-06-12 1992-12-17 Fuji Electric Co Ltd Mos型半導体素子駆動回路
US5430401A (en) * 1992-08-27 1995-07-04 Northern Telecom Ltd. Electronic switches
US5418673A (en) * 1992-12-14 1995-05-23 North American Philips Corporation Control electrode disable circuit for power transistor
SE502435C2 (sv) * 1994-02-09 1995-10-16 Ericsson Telefon Ab L M Förfarande och anordning i en halvledarkrets
US5592117A (en) * 1995-04-11 1997-01-07 International Rectifier Corporation Integrated MOSgated power semiconductor device with high negative clamp voltage and fail safe operation
US5909135A (en) * 1996-12-19 1999-06-01 Texas Instruments Incorporated High-side MOSFET gate protection shunt circuit
US6160691A (en) * 1998-12-21 2000-12-12 Semiconductor Components Industries, Llc Method of driving a load and semiconductor load driver circuit therefor
US6404267B1 (en) * 1999-07-21 2002-06-11 Cooper Industries High side MOSFET drive
JP2001274402A (ja) * 2000-03-24 2001-10-05 Toshiba Corp パワー半導体装置
JP2003047287A (ja) * 2001-07-26 2003-02-14 Auto Network Gijutsu Kenkyusho:Kk 保護回路
JP3633522B2 (ja) * 2001-07-27 2005-03-30 株式会社デンソー 負荷駆動回路
DE102005027442B4 (de) * 2005-06-14 2008-10-30 Continental Automotive Gmbh Schaltungsanordnung zum Schalten einer Last
CN106027016B (zh) * 2016-06-29 2018-08-14 浙江桃园科技有限公司 感性负载电压脉宽调制去磁电路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3034927C2 (de) * 1980-09-16 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zum Schutz eines Leistungs-MOSFET gegen Überlastung
JPS5855582B2 (ja) * 1981-11-13 1983-12-10 株式会社東芝 透視性テ−プカセツト
GB2142495B (en) * 1983-06-24 1986-09-17 Barry Wayne Williams Switch-off circuits for transistors and gate turn-off thyristors
US4665459A (en) * 1985-04-01 1987-05-12 Motorola, Inc. Method and circuit for dissipating stored inductive energy
US4728826A (en) * 1986-03-19 1988-03-01 Siemens Aktiengesellschaft MOSFET switch with inductive load
US4679112A (en) * 1986-07-31 1987-07-07 General Motors Corporation Transistor protection circuit for automotive motor control applications
GB8713388D0 (en) * 1987-06-08 1987-07-15 Philips Electronic Associated Semiconductor device
US4808839A (en) * 1988-04-04 1989-02-28 Motorola, Inc. Power field effect transistor driver circuit for protection from overvoltages

Also Published As

Publication number Publication date
IT8821561A0 (it) 1988-07-29
KR900002568A (ko) 1990-02-28
JPH0275222A (ja) 1990-03-14
EP0352828A3 (en) 1991-04-17
US5010439A (en) 1991-04-23
EP0352828A2 (en) 1990-01-31
DE68924107D1 (de) 1995-10-12
EP0352828B1 (en) 1995-09-06
DE68924107T2 (de) 1996-11-28

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Effective date: 19970730