IT1245365B - Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione - Google Patents
Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazioneInfo
- Publication number
- IT1245365B IT1245365B ITMI910836A ITMI910836A IT1245365B IT 1245365 B IT1245365 B IT 1245365B IT MI910836 A ITMI910836 A IT MI910836A IT MI910836 A ITMI910836 A IT MI910836A IT 1245365 B IT1245365 B IT 1245365B
- Authority
- IT
- Italy
- Prior art keywords
- current density
- power device
- high current
- manufacturing process
- bipolar power
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000969 carrier Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Thyristors (AREA)
Abstract
La struttura è composta da un'unica piastrina (1) di materiale semiconduttore, che comprende una zona (32) ad elevato tempo di vita dei portatori minoritari, che costituisce un dispositivo bipolare di potenza ad alta densità di corrente, ed almeno una zona (20, 21; 20', 21') a ridotto tempo di vita dei portatori minoritari, che costituisce un diodo veloce.(Fig. 4).
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI910836A IT1245365B (it) | 1991-03-28 | 1991-03-28 | Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione |
DE69229927T DE69229927T2 (de) | 1991-03-28 | 1992-03-17 | Integrierte Struktur einer bipolaren Leistungsanordnung mit hoher Stromdichte und einer schnellen Diode und Verfahren zu ihrer Herstellung |
EP92200748A EP0506170B1 (en) | 1991-03-28 | 1992-03-17 | Integrated structure of bipolar power device with high current density and fast diode and related manufacturing process |
US07/852,310 US5343068A (en) | 1991-03-28 | 1992-03-18 | Integrated bipolar power device and a fast diode |
JP04068640A JP3125112B2 (ja) | 1991-03-28 | 1992-03-26 | 高電流密度を有するバイポーラパワー素子とファストダイオードの集積構造ならびに関連する製造プロセス |
US08/251,514 US5468660A (en) | 1991-03-28 | 1994-05-31 | Process for manufacturing an integrated bipolar power device and a fast diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI910836A IT1245365B (it) | 1991-03-28 | 1991-03-28 | Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI910836A0 ITMI910836A0 (it) | 1991-03-28 |
ITMI910836A1 ITMI910836A1 (it) | 1992-09-28 |
IT1245365B true IT1245365B (it) | 1994-09-20 |
Family
ID=11359289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI910836A IT1245365B (it) | 1991-03-28 | 1991-03-28 | Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione |
Country Status (5)
Country | Link |
---|---|
US (2) | US5343068A (it) |
EP (1) | EP0506170B1 (it) |
JP (1) | JP3125112B2 (it) |
DE (1) | DE69229927T2 (it) |
IT (1) | IT1245365B (it) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0642085A (ja) * | 1992-07-21 | 1994-02-15 | Daiwa House Ind Co Ltd | 外壁の開口フレーム固定構造 |
DE69421606T2 (de) * | 1994-03-30 | 2000-05-31 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Verfahren zur Herstellung von bipolaren Transistoren mit kontrollierter Speicherzeit |
US5838057A (en) * | 1994-08-03 | 1998-11-17 | Texas Instruments Incorporated | Transistor switches |
GB2292252A (en) * | 1994-08-05 | 1996-02-14 | Texas Instruments Ltd | Rapid turn off semiconductor devices |
GB9509301D0 (en) * | 1995-05-06 | 1995-06-28 | Atomic Energy Authority Uk | An improved process for the production of semi-conductor devices |
GB2325343A (en) * | 1997-05-14 | 1998-11-18 | Mitel Semiconductor Ltd | Semiconductor devices with p-n junctions |
GB9709642D0 (en) * | 1997-05-14 | 1997-07-02 | Plessey Semiconductors Ltd | Improvements in or relating to semiconductor devices |
US6358825B1 (en) * | 2000-11-21 | 2002-03-19 | Fairchild Semiconductor Corporation | Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control |
DE102007020039B4 (de) * | 2007-04-27 | 2011-07-14 | Infineon Technologies Austria Ag | Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement |
CN115274436B (zh) * | 2022-09-28 | 2023-01-10 | 瑞森半导体科技(湖南)有限公司 | 一种快恢复二极管及其制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3486950A (en) * | 1967-04-26 | 1969-12-30 | Motorola Inc | Localized control of carrier lifetimes in p-n junction devices and integrated circuits |
DE1619972A1 (de) * | 1967-05-02 | 1971-03-18 | Licentia Gmbh | Verfahren zum Gettern von metallischen Verunreinigungen aus Siliziumkristallen |
US3645808A (en) * | 1967-07-31 | 1972-02-29 | Hitachi Ltd | Method for fabricating a semiconductor-integrated circuit |
GB1250377A (it) * | 1968-08-24 | 1971-10-20 | ||
US3625781A (en) * | 1969-05-09 | 1971-12-07 | Ibm | Method of reducing carrier lifetime in semiconductor structures |
US3640783A (en) * | 1969-08-11 | 1972-02-08 | Trw Semiconductors Inc | Semiconductor devices with diffused platinum |
JPS52149666U (it) * | 1976-05-11 | 1977-11-12 | ||
JPS56114367A (en) * | 1980-02-14 | 1981-09-08 | Toshiba Corp | Semiconductor device |
DE3331631A1 (de) * | 1982-09-01 | 1984-03-01 | Mitsubishi Denki K.K., Tokyo | Halbleiter-bauelement |
US5128742A (en) * | 1988-04-14 | 1992-07-07 | Powerex, Inc. | Variable gain switch |
FR2638892B1 (fr) * | 1988-11-09 | 1992-12-24 | Sgs Thomson Microelectronics | Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede |
-
1991
- 1991-03-28 IT ITMI910836A patent/IT1245365B/it active IP Right Grant
-
1992
- 1992-03-17 DE DE69229927T patent/DE69229927T2/de not_active Expired - Fee Related
- 1992-03-17 EP EP92200748A patent/EP0506170B1/en not_active Expired - Lifetime
- 1992-03-18 US US07/852,310 patent/US5343068A/en not_active Expired - Lifetime
- 1992-03-26 JP JP04068640A patent/JP3125112B2/ja not_active Expired - Fee Related
-
1994
- 1994-05-31 US US08/251,514 patent/US5468660A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0506170B1 (en) | 1999-09-08 |
ITMI910836A1 (it) | 1992-09-28 |
JP3125112B2 (ja) | 2001-01-15 |
US5343068A (en) | 1994-08-30 |
EP0506170A1 (en) | 1992-09-30 |
ITMI910836A0 (it) | 1991-03-28 |
DE69229927D1 (de) | 1999-10-14 |
US5468660A (en) | 1995-11-21 |
JPH0822995A (ja) | 1996-01-23 |
DE69229927T2 (de) | 2000-01-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970329 |