JPS56114367A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56114367A JPS56114367A JP1600280A JP1600280A JPS56114367A JP S56114367 A JPS56114367 A JP S56114367A JP 1600280 A JP1600280 A JP 1600280A JP 1600280 A JP1600280 A JP 1600280A JP S56114367 A JPS56114367 A JP S56114367A
- Authority
- JP
- Japan
- Prior art keywords
- life time
- type
- diode
- substrate
- perforated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a monolithic semiconductor element small-sized by a method wherein on one semiconductor substrate are mounted having a life time higher than 1 and a diode made low in life time by diffusing killers while being isolated at distance larger than the thickness of the substrate. CONSTITUTION:A P type layer 2 is epitaxially grown on an N type semiconductor substrate 1, being covered with an SiO2 film 3, perforated a prescribed hole and diffused with an N type impurity to form a plurality of N type 4 for the transistors use. Then, the film 3 is perforated the hole for forming the diode which is required for a high speed switching characteristic, while being isolated as long as the distance (l) larger than the thickness (d) of the substrate 1 from the thus obtained transistor 6 of more than 1 in the life time, the N type impurity and the life time killer of gold, copper, iron, nickel, platinum of the like are continuously diffused to cause the diode 7 of the low life time to be grown. Thereafter, as usual, Al electrode 5 are formed on the respective elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1600280A JPS56114367A (en) | 1980-02-14 | 1980-02-14 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1600280A JPS56114367A (en) | 1980-02-14 | 1980-02-14 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56114367A true JPS56114367A (en) | 1981-09-08 |
Family
ID=11904408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1600280A Pending JPS56114367A (en) | 1980-02-14 | 1980-02-14 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56114367A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5343068A (en) * | 1991-03-28 | 1994-08-30 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Integrated bipolar power device and a fast diode |
| US5371040A (en) * | 1992-10-28 | 1994-12-06 | Temic Telefunken Microelectronic Gmbh | Method for manufacturing semiconductor components with short switching time |
-
1980
- 1980-02-14 JP JP1600280A patent/JPS56114367A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5343068A (en) * | 1991-03-28 | 1994-08-30 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Integrated bipolar power device and a fast diode |
| US5371040A (en) * | 1992-10-28 | 1994-12-06 | Temic Telefunken Microelectronic Gmbh | Method for manufacturing semiconductor components with short switching time |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5710992A (en) | Semiconductor device and manufacture therefor | |
| JPS56162875A (en) | Semiconductor device | |
| JPS55140265A (en) | Semiconductor memory device and method of fabricating the same | |
| JPS56114367A (en) | Semiconductor device | |
| JPS572519A (en) | Manufacture of semiconductor device | |
| JPS57122575A (en) | Manufacture of thin film transistor | |
| JPS56111264A (en) | Manufacture of semiconductor device | |
| JPS533075A (en) | Production of mos structure field effect semiconductor device | |
| JPS6431471A (en) | Semiconductor device | |
| JPS5688362A (en) | Vertical type power mos transistor | |
| JPS56158477A (en) | Manufacture of gate turn off thyristor | |
| JPS5727060A (en) | Manufacture of semiconductor device | |
| JPS56126971A (en) | Thin film field effect element | |
| JPS6476756A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| JPS55105376A (en) | Manufacture process of semiconductor device | |
| JPS5660049A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS56104472A (en) | Semiconductor device | |
| JPS55115357A (en) | Semiconductor device | |
| JPS5772373A (en) | Semiconductor device | |
| JPS55102263A (en) | Semiconductor integrated circuit | |
| JPS5394778A (en) | Manufacture of semiconductor device | |
| JPS5538080A (en) | Semiconductor device | |
| JPS52116086A (en) | Semiconductor device | |
| JPS5546584A (en) | Complementary insulated gate field effect semiconductor device and method of fabricating the same | |
| JPS5484980A (en) | Semiconductor device |