IT1227690B - Crogiolo perfezionato per l'accrescimento della struttura dendritica del silicio - Google Patents

Crogiolo perfezionato per l'accrescimento della struttura dendritica del silicio

Info

Publication number
IT1227690B
IT1227690B IT8822999A IT2299988A IT1227690B IT 1227690 B IT1227690 B IT 1227690B IT 8822999 A IT8822999 A IT 8822999A IT 2299988 A IT2299988 A IT 2299988A IT 1227690 B IT1227690 B IT 1227690B
Authority
IT
Italy
Prior art keywords
perfected
crucible
growth
dendritic structure
silicon dendritic
Prior art date
Application number
IT8822999A
Other languages
English (en)
Other versions
IT8822999A0 (it
Inventor
Raymond George Seidensticker
Edgar Leonard Kochka
Charles Stuart Duncan
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IT8822999A0 publication Critical patent/IT8822999A0/it
Application granted granted Critical
Publication of IT1227690B publication Critical patent/IT1227690B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT8822999A 1987-12-31 1988-12-16 Crogiolo perfezionato per l'accrescimento della struttura dendritica del silicio IT1227690B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/140,071 US4919901A (en) 1987-12-31 1987-12-31 Barrier design for crucibles for silicon dendritic web growth

Publications (2)

Publication Number Publication Date
IT8822999A0 IT8822999A0 (it) 1988-12-16
IT1227690B true IT1227690B (it) 1991-04-23

Family

ID=22489618

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8822999A IT1227690B (it) 1987-12-31 1988-12-16 Crogiolo perfezionato per l'accrescimento della struttura dendritica del silicio

Country Status (6)

Country Link
US (1) US4919901A (it)
JP (1) JP2640524B2 (it)
KR (1) KR890011025A (it)
AU (1) AU604994B2 (it)
FR (1) FR2625513B1 (it)
IT (1) IT1227690B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0676274B2 (ja) * 1988-11-11 1994-09-28 東芝セラミックス株式会社 シリコン単結晶の製造装置
JPH0825833B2 (ja) * 1990-04-27 1996-03-13 東芝セラミックス株式会社 シリコン単結晶の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353875A (en) * 1978-11-06 1982-10-12 Allied Corporation Apparatus for growing crystalline materials
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4389377A (en) * 1981-07-10 1983-06-21 The United States Of America As Represented By The United States Department Of Energy Apparatus for growing a dendritic web
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
IN161924B (it) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
US4698120A (en) * 1984-10-29 1987-10-06 Westinghouse Electric Corp. Barrier for quartz crucible for drawing silicon dendritic web and method of use
JPS62128999A (ja) * 1985-11-25 1987-06-11 Sumitomo Electric Ind Ltd ２重るつぼを用いた単結晶引上方法及び２重るつぼ
JPS6379790A (ja) * 1986-09-22 1988-04-09 Toshiba Corp 結晶引上げ装置

Also Published As

Publication number Publication date
AU604994B2 (en) 1991-01-03
FR2625513B1 (fr) 1993-01-08
KR890011025A (ko) 1989-08-12
JP2640524B2 (ja) 1997-08-13
US4919901A (en) 1990-04-24
AU2597388A (en) 1989-07-06
JPH01215790A (ja) 1989-08-29
IT8822999A0 (it) 1988-12-16
FR2625513A1 (fr) 1989-07-07

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971230