IT1214246B - Dispositivo di memoria non volatile ad elevato numero di cicli di modifica. - Google Patents
Dispositivo di memoria non volatile ad elevato numero di cicli di modifica.Info
- Publication number
- IT1214246B IT1214246B IT8783629A IT8362987A IT1214246B IT 1214246 B IT1214246 B IT 1214246B IT 8783629 A IT8783629 A IT 8783629A IT 8362987 A IT8362987 A IT 8362987A IT 1214246 B IT1214246 B IT 1214246B
- Authority
- IT
- Italy
- Prior art keywords
- memory device
- volatile
- volatile memory
- modification cycles
- cycles
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Non-Volatile Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8783629A IT1214246B (it) | 1987-05-27 | 1987-05-27 | Dispositivo di memoria non volatile ad elevato numero di cicli di modifica. |
DE8888830208T DE3864449D1 (de) | 1987-05-27 | 1988-05-12 | Nichtfluechtige speichereinrichtung, die eine grosse zahl von programmierungszyklen vertraegt. |
EP88830208A EP0293339B1 (en) | 1987-05-27 | 1988-05-12 | Nonvolatile memory device with a high number of cycle programming endurance |
KR88006177A KR950008401B1 (en) | 1987-05-27 | 1988-05-26 | Nonvolatile memory device with a high number of cycle programming endurance |
US07/199,077 US4807188A (en) | 1987-05-27 | 1988-05-26 | Nonvolatile memory device with a high number of cycle programming endurance |
JP13005288A JP3098012B2 (ja) | 1987-05-27 | 1988-05-27 | 多数回のプログラムサイクルに対して耐久性を有する不揮発性メモリデバイス |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8783629A IT1214246B (it) | 1987-05-27 | 1987-05-27 | Dispositivo di memoria non volatile ad elevato numero di cicli di modifica. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8783629A0 IT8783629A0 (it) | 1987-05-27 |
IT1214246B true IT1214246B (it) | 1990-01-10 |
Family
ID=11323385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT8783629A IT1214246B (it) | 1987-05-27 | 1987-05-27 | Dispositivo di memoria non volatile ad elevato numero di cicli di modifica. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4807188A (it) |
EP (1) | EP0293339B1 (it) |
JP (1) | JP3098012B2 (it) |
KR (1) | KR950008401B1 (it) |
DE (1) | DE3864449D1 (it) |
IT (1) | IT1214246B (it) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1221780B (it) * | 1988-01-29 | 1990-07-12 | Sgs Thomson Microelectronics | Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos |
US5268319A (en) | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
US5029131A (en) * | 1988-06-29 | 1991-07-02 | Seeq Technology, Incorporated | Fault tolerant differential memory cell and sensing |
US7447069B1 (en) | 1989-04-13 | 2008-11-04 | Sandisk Corporation | Flash EEprom system |
US5172338B1 (en) * | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
US7190617B1 (en) | 1989-04-13 | 2007-03-13 | Sandisk Corporation | Flash EEprom system |
US5163021A (en) * | 1989-04-13 | 1992-11-10 | Sundisk Corporation | Multi-state EEprom read and write circuits and techniques |
DE69024086T2 (de) * | 1989-04-13 | 1996-06-20 | Sundisk Corp | EEprom-System mit Blocklöschung |
GB8916019D0 (en) * | 1989-07-13 | 1989-08-31 | Hughes Microelectronics Ltd | A non-volatile ram bit cell |
IT1230363B (it) * | 1989-08-01 | 1991-10-18 | Sgs Thomson Microelectronics | Cella di memoria eeprom, con protezione migliorata da errori dovuti a rottura della cella. |
US4992980A (en) * | 1989-08-07 | 1991-02-12 | Intel Corporation | Novel architecture for virtual ground high-density EPROMS |
US5168464A (en) * | 1989-11-29 | 1992-12-01 | Ncr Corporation | Nonvolatile differential memory device and method |
JP2685966B2 (ja) * | 1990-06-22 | 1997-12-08 | 株式会社東芝 | 不揮発性半導体記憶装置 |
IT1247650B (it) * | 1990-10-31 | 1994-12-28 | Sgs Thomson Microelectronics | Memoria flash eprom con aumentata immunita' da soft programming su una linea di riferimento |
JP3060680B2 (ja) * | 1990-11-30 | 2000-07-10 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
US5289412A (en) * | 1992-06-19 | 1994-02-22 | Intel Corporation | High-speed bias-stabilized current-mirror referencing circuit for non-volatile memories |
US5561632A (en) * | 1994-01-26 | 1996-10-01 | Sony Corporation | Nonvolatile semiconductor flash memory |
JP3336813B2 (ja) * | 1995-02-01 | 2002-10-21 | ソニー株式会社 | 不揮発性半導体メモリ装置 |
DE69521493T2 (de) * | 1995-04-04 | 2001-10-11 | Stmicroelectronics S.R.L., Agrate Brianza | Selektiver Sicherungskodierer |
EP0782144B1 (en) * | 1995-12-29 | 2001-05-23 | STMicroelectronics S.r.l. | Programmable device with basic modules electrically connected by flash memory cells |
FR2753829B1 (fr) * | 1996-09-24 | 1998-11-13 | Circuit de lecture pour memoire non volatile fonctionnant avec une basse tension d'alimentation | |
KR100265336B1 (ko) * | 1997-06-30 | 2000-09-15 | 김영환 | 트랜스컨덕터 |
FR2778253B1 (fr) * | 1998-04-30 | 2000-06-02 | Sgs Thomson Microelectronics | Dispositif de configuration d'options dans un circuit integre et procede de mise en oeuvre |
JP4484344B2 (ja) * | 2000-09-08 | 2010-06-16 | ローム株式会社 | 不揮発性半導体記憶装置 |
JP4678957B2 (ja) * | 2001-01-29 | 2011-04-27 | パナソニック株式会社 | 不揮発性メモリアレイ、マイクロコンピュータおよびマイクロコンピュータのプログラム書き換え方法 |
US6992938B1 (en) * | 2001-12-06 | 2006-01-31 | Virage Logic Corporation | Methods and apparatuses for test circuitry for a dual-polarity non-volatile memory cell |
US6788574B1 (en) | 2001-12-06 | 2004-09-07 | Virage Logic Corporation | Electrically-alterable non-volatile memory cell |
US7130213B1 (en) * | 2001-12-06 | 2006-10-31 | Virage Logic Corporation | Methods and apparatuses for a dual-polarity non-volatile memory cell |
US6842375B1 (en) | 2001-12-06 | 2005-01-11 | Virage Logic Corporation | Methods and apparatuses for maintaining information stored in a non-volatile memory cell |
US6998670B2 (en) * | 2003-04-25 | 2006-02-14 | Atmel Corporation | Twin EEPROM memory transistors with subsurface stepped floating gates |
US7082490B2 (en) * | 2003-10-20 | 2006-07-25 | Atmel Corporation | Method and system for enhancing the endurance of memory cells |
JP4860160B2 (ja) | 2004-02-10 | 2012-01-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US7755938B2 (en) * | 2004-04-19 | 2010-07-13 | Saifun Semiconductors Ltd. | Method for reading a memory array with neighbor effect cancellation |
US7978515B2 (en) * | 2007-03-23 | 2011-07-12 | Sharp Kabushiki Kaisha | Semiconductor storage device and electronic equipment therefor |
JP5417765B2 (ja) * | 2008-08-19 | 2014-02-19 | 凸版印刷株式会社 | 不揮発性半導体メモリセル及び不揮発性半導体メモリ装置 |
US10924112B2 (en) * | 2019-04-11 | 2021-02-16 | Ememory Technology Inc. | Bandgap reference circuit |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0085260B1 (en) * | 1981-12-29 | 1989-08-02 | Fujitsu Limited | Nonvolatile semiconductor memory circuit |
DE3267974D1 (en) * | 1982-03-17 | 1986-01-30 | Itt Ind Gmbh Deutsche | Electrically erasable memory matrix (eeprom) |
US4566080A (en) * | 1983-07-11 | 1986-01-21 | Signetics Corporation | Byte wide EEPROM with individual write circuits |
US4667312A (en) * | 1983-11-28 | 1987-05-19 | Exel Microelectronics Inc. | Charge pump method and apparatus |
JPS60150297A (ja) * | 1984-01-13 | 1985-08-07 | Nec Corp | 記憶装置 |
NL8400326A (nl) * | 1984-02-03 | 1985-09-02 | Philips Nv | Geintegreerde schakeling met veldeffecttransistoren en een programmeerbaar leesgeheugen. |
US4599707A (en) * | 1984-03-01 | 1986-07-08 | Signetics Corporation | Byte wide EEPROM with individual write circuits and write prevention means |
-
1987
- 1987-05-27 IT IT8783629A patent/IT1214246B/it active
-
1988
- 1988-05-12 EP EP88830208A patent/EP0293339B1/en not_active Expired - Lifetime
- 1988-05-12 DE DE8888830208T patent/DE3864449D1/de not_active Expired - Fee Related
- 1988-05-26 US US07/199,077 patent/US4807188A/en not_active Expired - Lifetime
- 1988-05-26 KR KR88006177A patent/KR950008401B1/ko not_active IP Right Cessation
- 1988-05-27 JP JP13005288A patent/JP3098012B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3098012B2 (ja) | 2000-10-10 |
KR880014573A (ko) | 1988-12-24 |
DE3864449D1 (de) | 1991-10-02 |
IT8783629A0 (it) | 1987-05-27 |
JPS63306600A (ja) | 1988-12-14 |
EP0293339A1 (en) | 1988-11-30 |
US4807188A (en) | 1989-02-21 |
EP0293339B1 (en) | 1991-08-28 |
KR950008401B1 (en) | 1995-07-28 |
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Legal Events
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TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970530 |