IT1213411B - Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione. - Google Patents
Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione.Info
- Publication number
- IT1213411B IT1213411B IT8622719A IT2271986A IT1213411B IT 1213411 B IT1213411 B IT 1213411B IT 8622719 A IT8622719 A IT 8622719A IT 2271986 A IT2271986 A IT 2271986A IT 1213411 B IT1213411 B IT 1213411B
- Authority
- IT
- Italy
- Prior art keywords
- lasua
- manufacture
- protection device
- power mos
- device against
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8622719A IT1213411B (it) | 1986-12-17 | 1986-12-17 | Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione. |
EP87202309A EP0271942A3 (en) | 1986-12-17 | 1987-11-25 | Mos power structure with protective device against overvoltages and manufacturing process therefor |
US07/366,212 US4916085A (en) | 1986-12-17 | 1989-06-15 | MOS power structure with protective device against overvoltages and manufacturing process therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8622719A IT1213411B (it) | 1986-12-17 | 1986-12-17 | Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8622719A0 IT8622719A0 (it) | 1986-12-17 |
IT1213411B true IT1213411B (it) | 1989-12-20 |
Family
ID=11199626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT8622719A IT1213411B (it) | 1986-12-17 | 1986-12-17 | Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4916085A (it) |
EP (1) | EP0271942A3 (it) |
IT (1) | IT1213411B (it) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1229318B (it) * | 1989-05-02 | 1991-08-08 | Sgs Thomson Microelectronics | Dispositivo di protezione contro il breakdown di transistori bipolari in un circuito integrato di pilotaggio per dispositivo di potenza con carico risonante sul collettore. |
US5246871A (en) * | 1989-06-16 | 1993-09-21 | Sgs-Thomson Microelectronics S.R.L. | Method of manufacturing a semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip |
US5273917A (en) * | 1989-08-19 | 1993-12-28 | Fuji Electric Co., Ltd. | Method for manufacturing a conductivity modulation MOSFET |
DE69029180T2 (de) * | 1989-08-30 | 1997-05-22 | Siliconix Inc | Transistor mit Spannungsbegrenzungsanordnung |
JPH04291767A (ja) * | 1991-03-20 | 1992-10-15 | Fuji Electric Co Ltd | 伝導度変調型mosfet |
DE4120394A1 (de) * | 1991-06-20 | 1992-12-24 | Bosch Gmbh Robert | Monolithisch integrierte schaltungsanordnung |
US5272097A (en) * | 1992-04-07 | 1993-12-21 | Philip Shiota | Method for fabricating diodes for electrostatic discharge protection and voltage references |
US5591661A (en) * | 1992-04-07 | 1997-01-07 | Shiota; Philip | Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures |
GB9215654D0 (en) * | 1992-07-23 | 1992-09-09 | Philips Electronics Uk Ltd | A semiconductor component |
US5580808A (en) * | 1992-07-30 | 1996-12-03 | Canon Kabushiki Kaisha | Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam |
WO1994005042A1 (en) * | 1992-08-14 | 1994-03-03 | International Business Machines Corporation | Mos device having protection against electrostatic discharge |
FR2698486B1 (fr) * | 1992-11-24 | 1995-03-10 | Sgs Thomson Microelectronics | Structure de protection contre les surtensions directes pour composant semiconducteur vertical. |
KR100291540B1 (ko) * | 1992-10-29 | 2001-09-17 | 사와무라 시코 | 입/출력보호회로 |
US5420451A (en) * | 1993-11-30 | 1995-05-30 | Siliconix Incorporated | Bidirectional blocking lateral MOSFET with improved on-resistance |
US5466951A (en) * | 1993-12-08 | 1995-11-14 | Siemens Aktiengesellschaft | Controllable power semiconductor element with buffer zone and method for the manufacture thereof |
US5532894A (en) | 1994-07-11 | 1996-07-02 | Minnesota Mining And Manufacturing Company | Overvoltage protection circuit |
US5519242A (en) * | 1994-08-17 | 1996-05-21 | David Sarnoff Research Center, Inc. | Electrostatic discharge protection circuit for a NMOS or lateral NPN transistor |
JP2946306B2 (ja) * | 1995-09-12 | 1999-09-06 | セイコーインスツルメンツ株式会社 | 半導体温度センサーとその製造方法 |
KR100482363B1 (ko) * | 1997-10-14 | 2005-08-25 | 삼성전자주식회사 | 보호용다이오드를가지는반도체장치및그제조방법 |
US6696707B2 (en) * | 1999-04-23 | 2004-02-24 | Ccp. Clare Corporation | High voltage integrated switching devices on a bonded and trenched silicon substrate |
US6365932B1 (en) | 1999-08-20 | 2002-04-02 | Denso Corporation | Power MOS transistor |
US6566223B1 (en) | 2000-08-15 | 2003-05-20 | C. P. Clare Corporation | High voltage integrated switching devices on a bonded and trenched silicon substrate |
US7279743B2 (en) | 2003-12-02 | 2007-10-09 | Vishay-Siliconix | Closed cell trench metal-oxide-semiconductor field effect transistor |
US8183629B2 (en) * | 2004-05-13 | 2012-05-22 | Vishay-Siliconix | Stacked trench metal-oxide-semiconductor field effect transistor device |
US8471390B2 (en) * | 2006-05-12 | 2013-06-25 | Vishay-Siliconix | Power MOSFET contact metallization |
US8368126B2 (en) * | 2007-04-19 | 2013-02-05 | Vishay-Siliconix | Trench metal oxide semiconductor with recessed trench material and remote contacts |
US8310275B2 (en) * | 2008-03-27 | 2012-11-13 | Agere Systems Inc. | High voltage tolerant input/output interface circuit |
US9306056B2 (en) | 2009-10-30 | 2016-04-05 | Vishay-Siliconix | Semiconductor device with trench-like feed-throughs |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5591171A (en) * | 1978-12-28 | 1980-07-10 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
US4344081A (en) * | 1980-04-14 | 1982-08-10 | Supertex, Inc. | Combined DMOS and a vertical bipolar transistor device and fabrication method therefor |
JPS57186833A (en) * | 1981-05-13 | 1982-11-17 | Hitachi Ltd | Switching element |
US4441117A (en) * | 1981-07-27 | 1984-04-03 | Intersil, Inc. | Monolithically merged field effect transistor and bipolar junction transistor |
JPS5821374A (ja) * | 1981-07-29 | 1983-02-08 | Toshiba Corp | 半導体装置 |
JPS5825264A (ja) * | 1981-08-07 | 1983-02-15 | Hitachi Ltd | 絶縁ゲート型半導体装置 |
JPS5998557A (ja) * | 1982-11-27 | 1984-06-06 | Nissan Motor Co Ltd | Mosトランジスタ |
JPH0612828B2 (ja) * | 1983-06-30 | 1994-02-16 | 株式会社東芝 | 半導体装置 |
IT1188309B (it) * | 1986-01-24 | 1988-01-07 | Sgs Microelettrica Spa | Procedimento per la fabbricazione di dispositivi elettronici integrati,in particolare transistori mos a canale p ad alta tensione |
JP2515745B2 (ja) * | 1986-07-14 | 1996-07-10 | 株式会社日立製作所 | 半導体装置の製造方法 |
-
1986
- 1986-12-17 IT IT8622719A patent/IT1213411B/it active
-
1987
- 1987-11-25 EP EP87202309A patent/EP0271942A3/en not_active Ceased
-
1989
- 1989-06-15 US US07/366,212 patent/US4916085A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0271942A3 (en) | 1990-06-20 |
IT8622719A0 (it) | 1986-12-17 |
EP0271942A2 (en) | 1988-06-22 |
US4916085A (en) | 1990-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19961227 |