IT1213027B - Densita'.!circuito integrato a semiconduttore, in particolare del tipo comprendente dispositivi ad alta tensione e dispositivi di elaborazione di segnale ad alta - Google Patents

Densita'.!circuito integrato a semiconduttore, in particolare del tipo comprendente dispositivi ad alta tensione e dispositivi di elaborazione di segnale ad alta

Info

Publication number
IT1213027B
IT1213027B IT8619174A IT1917486A IT1213027B IT 1213027 B IT1213027 B IT 1213027B IT 8619174 A IT8619174 A IT 8619174A IT 1917486 A IT1917486 A IT 1917486A IT 1213027 B IT1213027 B IT 1213027B
Authority
IT
Italy
Prior art keywords
density
integrated circuit
signal processing
semiconductor integrated
type including
Prior art date
Application number
IT8619174A
Other languages
English (en)
Other versions
IT8619174A0 (it
Inventor
Contiero Claudio
Galbiati Paola
Andreini Antonio
Original Assignee
Sgs Microelettrica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettrica Spa filed Critical Sgs Microelettrica Spa
Priority to IT8619174A priority Critical patent/IT1213027B/it
Publication of IT8619174A0 publication Critical patent/IT8619174A0/it
Priority to EP87100766A priority patent/EP0234269A3/en
Priority to JP62015043A priority patent/JPS62229881A/ja
Application granted granted Critical
Publication of IT1213027B publication Critical patent/IT1213027B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
IT8619174A 1986-01-24 1986-01-24 Densita'.!circuito integrato a semiconduttore, in particolare del tipo comprendente dispositivi ad alta tensione e dispositivi di elaborazione di segnale ad alta IT1213027B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT8619174A IT1213027B (it) 1986-01-24 1986-01-24 Densita'.!circuito integrato a semiconduttore, in particolare del tipo comprendente dispositivi ad alta tensione e dispositivi di elaborazione di segnale ad alta
EP87100766A EP0234269A3 (en) 1986-01-24 1987-01-21 High voltage semiconductor integrated circuit
JP62015043A JPS62229881A (ja) 1986-01-24 1987-01-23 集積回路およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8619174A IT1213027B (it) 1986-01-24 1986-01-24 Densita'.!circuito integrato a semiconduttore, in particolare del tipo comprendente dispositivi ad alta tensione e dispositivi di elaborazione di segnale ad alta

Publications (2)

Publication Number Publication Date
IT8619174A0 IT8619174A0 (it) 1986-01-24
IT1213027B true IT1213027B (it) 1989-12-07

Family

ID=11155516

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8619174A IT1213027B (it) 1986-01-24 1986-01-24 Densita'.!circuito integrato a semiconduttore, in particolare del tipo comprendente dispositivi ad alta tensione e dispositivi di elaborazione di segnale ad alta

Country Status (3)

Country Link
EP (1) EP0234269A3 (it)
JP (1) JPS62229881A (it)
IT (1) IT1213027B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179032A (en) * 1990-02-01 1993-01-12 Quigg Fred L Mosfet structure having reduced capacitance and method of forming same
US5446300A (en) * 1992-11-04 1995-08-29 North American Philips Corporation Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit
US5412239A (en) * 1993-05-14 1995-05-02 Siliconix Incorporated Contact geometry for improved lateral MOSFET
DE19510777C1 (de) * 1995-03-24 1996-06-05 Itt Ind Gmbh Deutsche Verfahren zum Herstellen einer CMOS-Struktur mit ESD-Schutz
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8742455B2 (en) 2011-05-11 2014-06-03 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8816389B2 (en) 2011-10-21 2014-08-26 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
US8803193B2 (en) 2011-05-11 2014-08-12 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
US9484739B2 (en) 2014-09-25 2016-11-01 Analog Devices Global Overvoltage protection device and method
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
US4414560A (en) * 1980-11-17 1983-11-08 International Rectifier Corporation Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region
JPS58134466A (ja) * 1982-02-03 1983-08-10 Nec Corp 半導体装置の製造方法
JPS6062156A (ja) * 1983-09-16 1985-04-10 Nippon Telegr & Teleph Corp <Ntt> 高耐圧半導体装置

Also Published As

Publication number Publication date
EP0234269A2 (en) 1987-09-02
IT8619174A0 (it) 1986-01-24
JPS62229881A (ja) 1987-10-08
EP0234269A3 (en) 1988-01-27

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