DE3770413D1 - Elektrisch programmierbarer festwertspeicher. - Google Patents

Elektrisch programmierbarer festwertspeicher.

Info

Publication number
DE3770413D1
DE3770413D1 DE8787402315T DE3770413T DE3770413D1 DE 3770413 D1 DE3770413 D1 DE 3770413D1 DE 8787402315 T DE8787402315 T DE 8787402315T DE 3770413 T DE3770413 T DE 3770413T DE 3770413 D1 DE3770413 D1 DE 3770413D1
Authority
DE
Germany
Prior art keywords
fixed value
value storage
electrically programmable
programmable fixed
electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787402315T
Other languages
English (en)
Inventor
Serge Fruhauf
Alexis Marquot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE3770413D1 publication Critical patent/DE3770413D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
DE8787402315T 1986-10-20 1987-10-16 Elektrisch programmierbarer festwertspeicher. Expired - Fee Related DE3770413D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8614523A FR2605447B1 (fr) 1986-10-20 1986-10-20 Memoire non volatile programmable electriquement

Publications (1)

Publication Number Publication Date
DE3770413D1 true DE3770413D1 (de) 1991-07-04

Family

ID=9339987

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787402315T Expired - Fee Related DE3770413D1 (de) 1986-10-20 1987-10-16 Elektrisch programmierbarer festwertspeicher.

Country Status (5)

Country Link
US (1) US4860258A (de)
EP (1) EP0267091B1 (de)
JP (1) JPS63108595A (de)
DE (1) DE3770413D1 (de)
FR (1) FR2605447B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2655737B1 (fr) * 1989-12-08 1992-06-12 Sgs Thomson Microelectronics Detecteur de variation rapide d'alimentation de circuit integre.
FR2660795B1 (fr) * 1990-04-10 1994-01-07 Sgs Thomson Microelectronics Sa Circuit de detection de fusible.
MY115289A (en) 1992-08-27 2003-05-31 Cabot Corp Carbon blacks containing epdm compositions having either a high gloss or a textured matte finish
JP2701757B2 (ja) * 1994-10-20 1998-01-21 日本電気株式会社 半導体記憶装置の書き込み方法
KR100477034B1 (ko) * 1995-01-31 2005-03-21 가부시끼가이샤 히다치 세이사꾸쇼 반도체 메모리 장치
JP3062730B2 (ja) 1996-07-10 2000-07-12 株式会社日立製作所 不揮発性半導体記憶装置および書込み方法
US6320785B1 (en) * 1996-07-10 2001-11-20 Hitachi, Ltd. Nonvolatile semiconductor memory device and data writing method therefor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2828855C2 (de) * 1978-06-30 1982-11-18 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch umprogrammierbarer, nichtflüchtiger Speicher sowie Verfahren zum Löschen bzw. Einschreiben eines bzw. in einen solchen Speicher(s)
US4441198A (en) * 1980-06-26 1984-04-03 Matsushita Electric Industrial Co., Ltd. Shift register circuit
EP0050005B1 (de) * 1980-10-15 1988-05-18 Kabushiki Kaisha Toshiba Halbleiterspeicher mit Programmierungszeit
US4453208A (en) * 1982-03-08 1984-06-05 Honeywell Information Systems Inc. Apparatus for controlling the time sequenced energization of a memory unit
JPS59101095A (ja) * 1982-11-29 1984-06-11 Toshiba Corp 不揮発性半導体メモリ
NL8400225A (nl) * 1984-01-25 1985-08-16 Philips Nv Schakeling voor het opwekken van de programmeerspanning van een uitwisbaar leesgeheugen.
JPH0746515B2 (ja) * 1984-12-28 1995-05-17 日本電気株式会社 デコ−ダ回路

Also Published As

Publication number Publication date
JPS63108595A (ja) 1988-05-13
FR2605447B1 (fr) 1988-12-09
FR2605447A1 (fr) 1988-04-22
US4860258A (en) 1989-08-22
EP0267091A1 (de) 1988-05-11
EP0267091B1 (de) 1991-05-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee