IT1124629B - Dispositivo e procedimento per epitassia a fusione - Google Patents

Dispositivo e procedimento per epitassia a fusione

Info

Publication number
IT1124629B
IT1124629B IT26633/79A IT2663379A IT1124629B IT 1124629 B IT1124629 B IT 1124629B IT 26633/79 A IT26633/79 A IT 26633/79A IT 2663379 A IT2663379 A IT 2663379A IT 1124629 B IT1124629 B IT 1124629B
Authority
IT
Italy
Prior art keywords
fusion
procedure
epitaxy device
epitaxy
fusion epitaxy
Prior art date
Application number
IT26633/79A
Other languages
English (en)
Italian (it)
Other versions
IT7926633A0 (it
Inventor
Jorg Aengenheister
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IT7926633A0 publication Critical patent/IT7926633A0/it
Application granted granted Critical
Publication of IT1124629B publication Critical patent/IT1124629B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/067—Boots or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
IT26633/79A 1978-10-25 1979-10-19 Dispositivo e procedimento per epitassia a fusione IT1124629B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2846486A DE2846486C2 (de) 1978-10-25 1978-10-25 Schmelzepitaxie-Verfahren und -Vorrichtung

Publications (2)

Publication Number Publication Date
IT7926633A0 IT7926633A0 (it) 1979-10-19
IT1124629B true IT1124629B (it) 1986-05-07

Family

ID=6053104

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26633/79A IT1124629B (it) 1978-10-25 1979-10-19 Dispositivo e procedimento per epitassia a fusione

Country Status (5)

Country Link
JP (1) JPS5559717A (de)
DE (1) DE2846486C2 (de)
FR (1) FR2439827B1 (de)
GB (1) GB2037181B (de)
IT (1) IT1124629B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0482991U (de) * 1990-11-29 1992-07-20

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664294A (en) * 1970-01-29 1972-05-23 Fairchild Camera Instr Co Push-pull structure for solution epitaxial growth of iii{14 v compounds
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
DE2437895C2 (de) * 1973-08-07 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Flüssigphasen-Epitaxieverfahren
DE2354866B2 (de) * 1973-11-02 1975-09-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum epitaktischen Abscheiden von Halbleitermaterial

Also Published As

Publication number Publication date
FR2439827B1 (fr) 1985-06-14
DE2846486A1 (de) 1980-04-30
DE2846486C2 (de) 1981-09-24
FR2439827A1 (fr) 1980-05-23
GB2037181A (en) 1980-07-09
IT7926633A0 (it) 1979-10-19
JPH023292B2 (de) 1990-01-23
GB2037181B (en) 1982-08-11
JPS5559717A (en) 1980-05-06

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