FR2439827B1 - Dispositif et procede d'epitaxie par fusion - Google Patents

Dispositif et procede d'epitaxie par fusion

Info

Publication number
FR2439827B1
FR2439827B1 FR7926234A FR7926234A FR2439827B1 FR 2439827 B1 FR2439827 B1 FR 2439827B1 FR 7926234 A FR7926234 A FR 7926234A FR 7926234 A FR7926234 A FR 7926234A FR 2439827 B1 FR2439827 B1 FR 2439827B1
Authority
FR
France
Prior art keywords
epitaxy
melting
melting epitaxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7926234A
Other languages
English (en)
Other versions
FR2439827A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2439827A1 publication Critical patent/FR2439827A1/fr
Application granted granted Critical
Publication of FR2439827B1 publication Critical patent/FR2439827B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/067—Boots or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
FR7926234A 1978-10-25 1979-10-23 Dispositif et procede d'epitaxie par fusion Expired FR2439827B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2846486A DE2846486C2 (de) 1978-10-25 1978-10-25 Schmelzepitaxie-Verfahren und -Vorrichtung

Publications (2)

Publication Number Publication Date
FR2439827A1 FR2439827A1 (fr) 1980-05-23
FR2439827B1 true FR2439827B1 (fr) 1985-06-14

Family

ID=6053104

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7926234A Expired FR2439827B1 (fr) 1978-10-25 1979-10-23 Dispositif et procede d'epitaxie par fusion

Country Status (5)

Country Link
JP (1) JPS5559717A (fr)
DE (1) DE2846486C2 (fr)
FR (1) FR2439827B1 (fr)
GB (1) GB2037181B (fr)
IT (1) IT1124629B (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0482991U (fr) * 1990-11-29 1992-07-20

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664294A (en) * 1970-01-29 1972-05-23 Fairchild Camera Instr Co Push-pull structure for solution epitaxial growth of iii{14 v compounds
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
DE2437895C2 (de) * 1973-08-07 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Flüssigphasen-Epitaxieverfahren
DE2354866B2 (de) * 1973-11-02 1975-09-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum epitaktischen Abscheiden von Halbleitermaterial

Also Published As

Publication number Publication date
DE2846486A1 (de) 1980-04-30
DE2846486C2 (de) 1981-09-24
FR2439827A1 (fr) 1980-05-23
GB2037181A (en) 1980-07-09
IT7926633A0 (it) 1979-10-19
JPH023292B2 (fr) 1990-01-23
GB2037181B (en) 1982-08-11
IT1124629B (it) 1986-05-07
JPS5559717A (en) 1980-05-06

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Legal Events

Date Code Title Description
ST Notification of lapse