IT1112637B - Memeoria capacitiva integrata - Google Patents

Memeoria capacitiva integrata

Info

Publication number
IT1112637B
IT1112637B IT24494/78A IT2449478A IT1112637B IT 1112637 B IT1112637 B IT 1112637B IT 24494/78 A IT24494/78 A IT 24494/78A IT 2449478 A IT2449478 A IT 2449478A IT 1112637 B IT1112637 B IT 1112637B
Authority
IT
Italy
Prior art keywords
integrated capacitive
capacitive memory
memory
integrated
capacitive
Prior art date
Application number
IT24494/78A
Other languages
English (en)
Other versions
IT7824494A0 (it
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7824494A0 publication Critical patent/IT7824494A0/it
Application granted granted Critical
Publication of IT1112637B publication Critical patent/IT1112637B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
IT24494/78A 1977-06-30 1978-06-13 Memeoria capacitiva integrata IT1112637B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/811,812 US4168536A (en) 1977-06-30 1977-06-30 Capacitor memory with an amplified cell signal

Publications (2)

Publication Number Publication Date
IT7824494A0 IT7824494A0 (it) 1978-06-13
IT1112637B true IT1112637B (it) 1986-01-20

Family

ID=25207659

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24494/78A IT1112637B (it) 1977-06-30 1978-06-13 Memeoria capacitiva integrata

Country Status (17)

Country Link
US (1) US4168536A (it)
JP (1) JPS5813997B2 (it)
AT (1) AT373432B (it)
AU (1) AU514832B2 (it)
BE (1) BE868453A (it)
BR (1) BR7803995A (it)
CA (1) CA1114504A (it)
CH (1) CH636469A5 (it)
DD (1) DD141082A5 (it)
DE (1) DE2818783C3 (it)
ES (1) ES470267A1 (it)
FR (1) FR2396386A1 (it)
GB (1) GB1563479A (it)
IT (1) IT1112637B (it)
NL (1) NL7807049A (it)
SE (1) SE7806951L (it)
SU (1) SU1076001A3 (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619585A (en) * 1979-07-26 1981-02-24 Toshiba Corp Semiconductor memory unit
GB2070329B (en) * 1980-01-25 1983-10-26 Tokyo Shibaura Electric Co Semiconductor memory device
JPS5948477B2 (ja) * 1980-03-31 1984-11-27 富士通株式会社 半導体記憶装置
DE3671124D1 (de) * 1985-02-13 1990-06-13 Toshiba Kawasaki Kk Halbleiterspeicherzelle.
US4677589A (en) * 1985-07-26 1987-06-30 Advanced Micro Devices, Inc. Dynamic random access memory cell having a charge amplifier
US5003361A (en) * 1987-08-31 1991-03-26 At&T Bell Laboratories Active dynamic memory cell
CA1322250C (en) * 1987-08-31 1993-09-14 Loren Thomas Lancaster Active dynamic memory cell
JP2575152B2 (ja) * 1987-10-22 1997-01-22 日宝化学株式会社 ヨウ素の回収装置
US4999811A (en) * 1987-11-30 1991-03-12 Texas Instruments Incorporated Trench DRAM cell with dynamic gain
US4914740A (en) * 1988-03-07 1990-04-03 International Business Corporation Charge amplifying trench memory cell
US4970689A (en) * 1988-03-07 1990-11-13 International Business Machines Corporation Charge amplifying trench memory cell
US9741417B1 (en) * 2016-10-14 2017-08-22 Nxp Usa, Inc. Sense amplifier circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3618053A (en) * 1969-12-31 1971-11-02 Westinghouse Electric Corp Trapped charge memory cell
US3652914A (en) * 1970-11-09 1972-03-28 Emerson Electric Co Variable direct voltage memory circuit
US3827034A (en) * 1972-09-14 1974-07-30 Ferranti Ltd Semiconductor information storage devices
DE2456893A1 (de) * 1974-12-02 1976-08-12 Siemens Ag Speicherelement

Also Published As

Publication number Publication date
JPS5813997B2 (ja) 1983-03-16
ATA322178A (de) 1983-05-15
GB1563479A (en) 1980-03-26
SU1076001A3 (ru) 1984-02-23
DD141082A5 (de) 1980-04-09
IT7824494A0 (it) 1978-06-13
NL7807049A (nl) 1979-01-03
JPS5413234A (en) 1979-01-31
DE2818783C3 (de) 1980-11-27
AU514832B2 (en) 1981-02-26
BE868453A (fr) 1978-10-16
AU3488378A (en) 1979-10-11
AT373432B (de) 1984-01-25
DE2818783A1 (de) 1979-01-04
DE2818783B2 (it) 1980-03-20
CA1114504A (en) 1981-12-15
US4168536A (en) 1979-09-18
FR2396386A1 (fr) 1979-01-26
FR2396386B1 (it) 1982-11-26
ES470267A1 (es) 1979-09-16
CH636469A5 (de) 1983-05-31
BR7803995A (pt) 1979-04-03
SE7806951L (sv) 1978-12-31

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