IT1079567B - Memoria perfezionata - Google Patents

Memoria perfezionata

Info

Publication number
IT1079567B
IT1079567B IT19960/77A IT1996077A IT1079567B IT 1079567 B IT1079567 B IT 1079567B IT 19960/77 A IT19960/77 A IT 19960/77A IT 1996077 A IT1996077 A IT 1996077A IT 1079567 B IT1079567 B IT 1079567B
Authority
IT
Italy
Prior art keywords
improved memory
memory
improved
Prior art date
Application number
IT19960/77A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1079567B publication Critical patent/IT1079567B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
IT19960/77A 1976-02-09 1977-02-04 Memoria perfezionata IT1079567B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/656,756 US4075045A (en) 1976-02-09 1976-02-09 Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps

Publications (1)

Publication Number Publication Date
IT1079567B true IT1079567B (it) 1985-05-13

Family

ID=24634424

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19960/77A IT1079567B (it) 1976-02-09 1977-02-04 Memoria perfezionata

Country Status (7)

Country Link
US (2) US4075045A (it)
JP (1) JPS5296876A (it)
BE (1) BE850213A (it)
CA (1) CA1079866A (it)
DE (1) DE2703957C2 (it)
GB (1) GB1543659A (it)
IT (1) IT1079567B (it)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168075A (en) * 1976-09-13 1992-12-01 Texas Instruments Incorporated Random access memory cell with implanted capacitor region
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor
US4600933A (en) * 1976-12-14 1986-07-15 Standard Microsystems Corporation Semiconductor integrated circuit structure with selectively modified insulation layer
GB1575741A (en) * 1977-01-17 1980-09-24 Philips Electronic Associated Integrated circuits
US4151020A (en) * 1977-01-26 1979-04-24 Texas Instruments Incorporated High density N-channel silicon gate read only memory
US4151021A (en) * 1977-01-26 1979-04-24 Texas Instruments Incorporated Method of making a high density floating gate electrically programmable ROM
NL7701172A (nl) * 1977-02-04 1978-08-08 Philips Nv Halfgeleidergeheugeninrichting.
US4205330A (en) * 1977-04-01 1980-05-27 National Semiconductor Corporation Method of manufacturing a low voltage n-channel MOSFET device
DE2740154A1 (de) * 1977-09-06 1979-03-15 Siemens Ag Monolithisch integrierte halbleiteranordnung
US4163243A (en) * 1977-09-30 1979-07-31 Hewlett-Packard Company One-transistor memory cell with enhanced capacitance
US4485390A (en) * 1978-03-27 1984-11-27 Ncr Corporation Narrow channel FET
US4178674A (en) * 1978-03-27 1979-12-18 Intel Corporation Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor
US4191603A (en) * 1978-05-01 1980-03-04 International Business Machines Corporation Making semiconductor structure with improved phosphosilicate glass isolation
US4251571A (en) * 1978-05-02 1981-02-17 International Business Machines Corporation Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon
US4180826A (en) * 1978-05-19 1979-12-25 Intel Corporation MOS double polysilicon read-only memory and cell
US4229755A (en) * 1978-08-15 1980-10-21 Rockwell International Corporation Fabrication of very large scale integrated circuits containing N-channel silicon gate nonvolatile memory elements
JPS5530846A (en) * 1978-08-28 1980-03-04 Hitachi Ltd Method for manufacturing fixed memory
US4259366A (en) * 1978-09-25 1981-03-31 Ibm Corporation Fabrication method for forming FET gate electrode
US4210465A (en) * 1978-11-20 1980-07-01 Ncr Corporation CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel
US4212684A (en) * 1978-11-20 1980-07-15 Ncr Corporation CISFET Processing including simultaneous doping of silicon components and FET channels
US4170500A (en) * 1979-01-15 1979-10-09 Fairchild Camera And Instrument Corporation Process for forming field dielectric regions in semiconductor structures without encroaching on device regions
DE2926416A1 (de) * 1979-06-29 1981-01-22 Siemens Ag Dynamische halbleiter-speicherzelle und verfahren zu ihrer herstellung
US4262298A (en) * 1979-09-04 1981-04-14 Burroughs Corporation Ram having a stabilized substrate bias and low-threshold narrow-width transfer gates
JPS5662353A (en) * 1979-10-29 1981-05-28 Toshiba Corp Semiconductor device and its manufacturing method
US4384301A (en) * 1979-11-07 1983-05-17 Texas Instruments Incorporated High performance submicron metal-oxide-semiconductor field effect transistor device structure
US4409727A (en) * 1979-11-14 1983-10-18 Ncr Corporation Methods of making narrow channel field effect transistors
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
US4329186A (en) * 1979-12-20 1982-05-11 Ibm Corporation Simultaneously forming fully implanted DMOS together with enhancement and depletion mode MOSFET devices
US4458406A (en) * 1979-12-28 1984-07-10 Ibm Corporation Making LSI devices with double level polysilicon structures
US4240845A (en) * 1980-02-04 1980-12-23 International Business Machines Corporation Method of fabricating random access memory device
JPS56116670A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
US4608751A (en) * 1980-04-07 1986-09-02 Texas Instruments Incorporated Method of making dynamic memory array
US5202574A (en) * 1980-05-02 1993-04-13 Texas Instruments Incorporated Semiconductor having improved interlevel conductor insulation
JPS6046545B2 (ja) * 1980-05-16 1985-10-16 日本電気株式会社 相補型ｍｏｓ記憶回路装置
US4317690A (en) * 1980-06-18 1982-03-02 Signetics Corporation Self-aligned double polysilicon MOS fabrication
US4359816A (en) * 1980-07-08 1982-11-23 International Business Machines Corporation Self-aligned metal process for field effect transistor integrated circuits
US4758528A (en) * 1980-07-08 1988-07-19 International Business Machines Corporation Self-aligned metal process for integrated circuit metallization
US4691219A (en) * 1980-07-08 1987-09-01 International Business Machines Corporation Self-aligned polysilicon base contact structure
US4341009A (en) * 1980-12-05 1982-07-27 International Business Machines Corporation Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate
US4622735A (en) * 1980-12-12 1986-11-18 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device utilizing self-aligned silicide regions
US4446613A (en) * 1981-10-19 1984-05-08 Intel Corporation Integrated circuit resistor and method of fabrication
US4349408A (en) * 1981-03-26 1982-09-14 Rca Corporation Method of depositing a refractory metal on a semiconductor substrate
US4441247A (en) * 1981-06-29 1984-04-10 Intel Corporation Method of making MOS device by forming self-aligned polysilicon and tungsten composite gate
DE3205858A1 (de) * 1982-02-18 1983-08-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von dynamischen halbleiter-speicherzellen mit wahlfreiem zugriff (ram) nach der doppel-polysilizium-gate-technologie
US4547959A (en) * 1983-02-22 1985-10-22 General Motors Corporation Uses for buried contacts in integrated circuits
US4633572A (en) * 1983-02-22 1987-01-06 General Motors Corporation Programming power paths in an IC by combined depletion and enhancement implants
IT1213192B (it) * 1984-07-19 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di transistori ad effetto di campo agate isolato (igfet) ad elevata velocita' di risposta in circuiti integrati ad alta densita'.
JPS60216578A (ja) * 1985-03-11 1985-10-30 Nec Corp 半導体メモリ装置
GB2172743B (en) * 1985-03-23 1988-11-16 Stc Plc Improvements in integrated circuits
KR970003903B1 (en) * 1987-04-24 1997-03-22 Hitachi Mfg Kk Semiconductor device and fabricating method thereof
US5195017A (en) * 1989-12-13 1993-03-16 Texas Instruments Incorporated Method for forming a polysilicon to polysilicon capacitor and apparatus formed therefrom
US5100831A (en) * 1990-02-16 1992-03-31 Sumitomo Electric Industries, Ltd. Method for fabricating semiconductor device
US5358890A (en) * 1993-04-19 1994-10-25 Motorola Inc. Process for fabricating isolation regions in a semiconductor device
JPH06349820A (ja) * 1993-06-11 1994-12-22 Rohm Co Ltd 半導体装置の製造方法
US6780718B2 (en) 1993-11-30 2004-08-24 Stmicroelectronics, Inc. Transistor structure and method for making same
US5885874A (en) * 1997-04-21 1999-03-23 Advanced Micro Devices, Inc. Method of making enhancement-mode and depletion-mode IGFETS using selective doping of a gate material
US5976938A (en) * 1997-04-21 1999-11-02 Advanced Micro Devices, Inc. Method of making enhancement-mode and depletion-mode IGFETs with different gate thicknesses
US5923984A (en) * 1997-04-21 1999-07-13 Advanced Micro Devices, Inc. Method of making enhancement-mode and depletion-mode IGFETS with different gate materials
US6776792B1 (en) * 1997-04-24 2004-08-17 Advanced Cardiovascular Systems Inc. Coated endovascular stent
JPH118352A (ja) * 1997-06-14 1999-01-12 Toshiba Microelectron Corp 半導体集積回路装置及びその製造方法
US5963803A (en) * 1998-02-02 1999-10-05 Advanced Micro Devices, Inc. Method of making N-channel and P-channel IGFETs with different gate thicknesses and spacer widths
US6066525A (en) * 1998-04-07 2000-05-23 Lsi Logic Corporation Method of forming DRAM capacitor by forming separate dielectric layers in a CMOS process
US6034388A (en) * 1998-05-15 2000-03-07 International Business Machines Corporation Depleted polysilicon circuit element and method for producing the same
US6136656A (en) * 1998-10-22 2000-10-24 International Business Machines Corporation Method to create a depleted poly MOSFET
US6352934B1 (en) * 1999-08-26 2002-03-05 Infineon Technologies Ag Sidewall oxide process for improved shallow junction formation in support region
US6790228B2 (en) * 1999-12-23 2004-09-14 Advanced Cardiovascular Systems, Inc. Coating for implantable devices and a method of forming the same
DE10049175A1 (de) 2000-09-22 2002-04-25 Tea Gmbh Biologisch abbaubare Funktionsflüssigkeit für mechanische Antriebe
US6783793B1 (en) * 2000-10-26 2004-08-31 Advanced Cardiovascular Systems, Inc. Selective coating of medical devices
US6565659B1 (en) * 2001-06-28 2003-05-20 Advanced Cardiovascular Systems, Inc. Stent mounting assembly and a method of using the same to coat a stent
US6800563B2 (en) * 2001-10-11 2004-10-05 Ovonyx, Inc. Forming tapered lower electrode phase-change memories
US20040229453A1 (en) * 2003-05-15 2004-11-18 Jsr Micro, Inc. Methods of pore sealing and metal encapsulation in porous low k interconnect
US7198675B2 (en) * 2003-09-30 2007-04-03 Advanced Cardiovascular Systems Stent mandrel fixture and method for selectively coating surfaces of a stent
US7563324B1 (en) 2003-12-29 2009-07-21 Advanced Cardiovascular Systems Inc. System and method for coating an implantable medical device
US7553377B1 (en) 2004-04-27 2009-06-30 Advanced Cardiovascular Systems, Inc. Apparatus and method for electrostatic coating of an abluminal stent surface
US20050288481A1 (en) * 2004-04-30 2005-12-29 Desnoyer Jessica R Design of poly(ester amides) for the control of agent-release from polymeric compositions
US7527994B2 (en) * 2004-09-01 2009-05-05 Honeywell International Inc. Amorphous silicon thin-film transistors and methods of making the same
US7632307B2 (en) 2004-12-16 2009-12-15 Advanced Cardiovascular Systems, Inc. Abluminal, multilayer coating constructs for drug-delivery stents
US20060216431A1 (en) * 2005-03-28 2006-09-28 Kerrigan Cameron K Electrostatic abluminal coating of a stent crimped on a balloon catheter
JP4718894B2 (ja) * 2005-05-19 2011-07-06 株式会社東芝 半導体装置の製造方法
US7867547B2 (en) 2005-12-19 2011-01-11 Advanced Cardiovascular Systems, Inc. Selectively coating luminal surfaces of stents
US20070148251A1 (en) * 2005-12-22 2007-06-28 Hossainy Syed F A Nanoparticle releasing medical devices
US8069814B2 (en) 2006-05-04 2011-12-06 Advanced Cardiovascular Systems, Inc. Stent support devices
US8603530B2 (en) * 2006-06-14 2013-12-10 Abbott Cardiovascular Systems Inc. Nanoshell therapy
US8048448B2 (en) * 2006-06-15 2011-11-01 Abbott Cardiovascular Systems Inc. Nanoshells for drug delivery
US8017237B2 (en) 2006-06-23 2011-09-13 Abbott Cardiovascular Systems, Inc. Nanoshells on polymers
US8048441B2 (en) 2007-06-25 2011-11-01 Abbott Cardiovascular Systems, Inc. Nanobead releasing medical devices
US9449666B2 (en) 2009-12-17 2016-09-20 Macronix International Co., Ltd. Local word line driver
TWI415137B (zh) * 2009-12-17 2013-11-11 Macronix Int Co Ltd 區域字元線驅動器
US9570133B2 (en) 2009-12-17 2017-02-14 Macronix International Co., Ltd. Local word line driver
US9281021B2 (en) 2013-03-14 2016-03-08 Macronix International Co., Ltd. Method and apparatus for reduced read latency for consecutive read operations of memory of an integrated circuit

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
GB1261723A (en) * 1968-03-11 1972-01-26 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
FR2014382B1 (it) * 1968-06-28 1974-03-15 Motorola Inc
US3936862A (en) * 1968-10-02 1976-02-03 National Semiconductor Corporation MISFET and method of manufacture
US3775191A (en) * 1971-06-28 1973-11-27 Bell Canada Northern Electric Modification of channel regions in insulated gate field effect transistors
JPS4843590A (it) * 1971-10-04 1973-06-23
DE2314260A1 (de) * 1972-05-30 1973-12-13 Ibm Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung
US3834959A (en) * 1972-06-30 1974-09-10 Ibm Process for the formation of selfaligned silicon and aluminum gates
US3897282A (en) * 1972-10-17 1975-07-29 Northern Electric Co Method of forming silicon gate device structures with two or more gate levels
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
US3811076A (en) * 1973-01-02 1974-05-14 Ibm Field effect transistor integrated circuit and memory
US3899363A (en) * 1974-06-28 1975-08-12 Ibm Method and device for reducing sidewall conduction in recessed oxide pet arrays
US3958323A (en) * 1975-04-29 1976-05-25 International Business Machines Corporation Three mask self aligned IGFET fabrication process
US4033026A (en) * 1975-12-16 1977-07-05 Intel Corporation High density/high speed MOS process and device

Also Published As

Publication number Publication date
US4075045A (en) 1978-02-21
CA1079866A (en) 1980-06-17
GB1543659A (en) 1979-04-04
US4085498A (en) 1978-04-25
DE2703957A1 (de) 1977-08-11
BE850213A (fr) 1977-05-02
JPS571144B2 (it) 1982-01-09
JPS5296876A (en) 1977-08-15
DE2703957C2 (de) 1982-10-28

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