IT1108268B - Dispositivo semiconduttore - Google Patents

Dispositivo semiconduttore

Info

Publication number
IT1108268B
IT1108268B IT69957/78A IT6995778A IT1108268B IT 1108268 B IT1108268 B IT 1108268B IT 69957/78 A IT69957/78 A IT 69957/78A IT 6995778 A IT6995778 A IT 6995778A IT 1108268 B IT1108268 B IT 1108268B
Authority
IT
Italy
Prior art keywords
semiconductive device
semiconductive
Prior art date
Application number
IT69957/78A
Other languages
English (en)
Other versions
IT7869957A0 (it
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT7869957A0 publication Critical patent/IT7869957A0/it
Application granted granted Critical
Publication of IT1108268B publication Critical patent/IT1108268B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708Emitter or collector electrodes for bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004Base region of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
IT69957/78A 1977-12-28 1978-12-27 Dispositivo semiconduttore IT1108268B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/865,236 US4236164A (en) 1977-12-28 1977-12-28 Bipolar transistor stabilization structure

Publications (2)

Publication Number Publication Date
IT7869957A0 IT7869957A0 (it) 1978-12-27
IT1108268B true IT1108268B (it) 1985-12-02

Family

ID=25345018

Family Applications (1)

Application Number Title Priority Date Filing Date
IT69957/78A IT1108268B (it) 1977-12-28 1978-12-27 Dispositivo semiconduttore

Country Status (9)

Country Link
US (1) US4236164A (it)
JP (1) JPS5497378A (it)
BE (1) BE873009A (it)
CA (1) CA1118533A (it)
DE (1) DE2855840A1 (it)
FR (1) FR2413790A1 (it)
GB (1) GB2011708B (it)
IT (1) IT1108268B (it)
NL (1) NL7812522A (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162365A (en) * 1981-03-30 1982-10-06 Toshiba Corp Semiconductor device
JPS59181679A (ja) * 1983-03-31 1984-10-16 Nippon Denso Co Ltd 半導体装置
JPH0719838B2 (ja) * 1985-07-19 1995-03-06 松下電器産業株式会社 半導体装置およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631311A (en) * 1968-03-26 1971-12-28 Telefunken Patent Semiconductor circuit arrangement with integrated base leakage resistance
US3766449A (en) * 1972-03-27 1973-10-16 Ferranti Ltd Transistors
JPS509515A (it) * 1973-05-30 1975-01-31
JPS5116310B2 (it) * 1973-12-12 1976-05-22
DE2410092A1 (de) * 1974-03-02 1975-09-04 Licentia Gmbh Halbleiteranordnung
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
US4047220A (en) * 1975-12-24 1977-09-06 General Electric Company Bipolar transistor structure having low saturation resistance
US4143455A (en) * 1976-03-11 1979-03-13 Siemens Aktiengesellschaft Method of producing a semiconductor component

Also Published As

Publication number Publication date
DE2855840A1 (de) 1979-08-16
IT7869957A0 (it) 1978-12-27
FR2413790B1 (it) 1984-06-29
BE873009A (fr) 1979-04-17
CA1118533A (en) 1982-02-16
NL7812522A (nl) 1979-07-02
JPS6145863B2 (it) 1986-10-09
US4236164A (en) 1980-11-25
GB2011708A (en) 1979-07-11
JPS5497378A (en) 1979-08-01
GB2011708B (en) 1982-02-24
FR2413790A1 (fr) 1979-07-27

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