IT1012428B - Dispositivo semiconduttore per ti po iii.v avente contatti ohmici e metodo per l ottenimento di det ti contatti - Google Patents

Dispositivo semiconduttore per ti po iii.v avente contatti ohmici e metodo per l ottenimento di det ti contatti

Info

Publication number
IT1012428B
IT1012428B IT22799/74A IT2279974A IT1012428B IT 1012428 B IT1012428 B IT 1012428B IT 22799/74 A IT22799/74 A IT 22799/74A IT 2279974 A IT2279974 A IT 2279974A IT 1012428 B IT1012428 B IT 1012428B
Authority
IT
Italy
Prior art keywords
contacts
iii
obtaining
semiconductive device
ohmic
Prior art date
Application number
IT22799/74A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1012428B publication Critical patent/IT1012428B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
IT22799/74A 1973-05-18 1974-05-15 Dispositivo semiconduttore per ti po iii.v avente contatti ohmici e metodo per l ottenimento di det ti contatti IT1012428B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7318120A FR2230078B1 (it) 1973-05-18 1973-05-18

Publications (1)

Publication Number Publication Date
IT1012428B true IT1012428B (it) 1977-03-10

Family

ID=9119559

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22799/74A IT1012428B (it) 1973-05-18 1974-05-15 Dispositivo semiconduttore per ti po iii.v avente contatti ohmici e metodo per l ottenimento di det ti contatti

Country Status (6)

Country Link
US (1) US3987480A (it)
JP (1) JPS5042786A (it)
CA (1) CA1001774A (it)
DE (1) DE2422621A1 (it)
FR (1) FR2230078B1 (it)
IT (1) IT1012428B (it)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931212B2 (ja) * 1974-09-03 1984-07-31 日本電気株式会社 化合物半導体装置の製造方法
JPS5295972A (en) * 1976-02-09 1977-08-12 Hitachi Ltd Semiconductor element
US4081824A (en) * 1977-03-24 1978-03-28 Bell Telephone Laboratories, Incorporated Ohmic contact to aluminum-containing compound semiconductors
GB1574525A (en) * 1977-04-13 1980-09-10 Philips Electronic Associated Method of manufacturing semiconductor devices and semiconductor devices manufactured by the method
FR2413780A1 (fr) * 1977-12-29 1979-07-27 Thomson Csf Procede de realisation d'un contact " metal-semi-conducteur " a barriere de potentiel de hauteur predeterminee, et composant semi-conducteur comportant au moins un contact obtenu par ce procede
NL7902247A (nl) * 1978-03-25 1979-09-27 Fujitsu Ltd Metaal-isolator-halfgeleidertype halfgeleiderinrich- ting en werkwijze voor het vervaardigen ervan.
US4186410A (en) * 1978-06-27 1980-01-29 Bell Telephone Laboratories, Incorporated Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
US4330343A (en) * 1979-01-04 1982-05-18 The United States Of America As Represented By The Secretary Of The Navy Refractory passivated ion-implanted GaAs ohmic contacts
US4366186A (en) * 1979-09-27 1982-12-28 Bell Telephone Laboratories, Incorporated Ohmic contact to p-type InP
US4414561A (en) * 1979-09-27 1983-11-08 Bell Telephone Laboratories, Incorporated Beryllium-gold ohmic contact to a semiconductor device
US4298403A (en) * 1980-02-28 1981-11-03 Davey John E Ion-implanted evaporated germanium layers as n+ contacts to GaAs
US4524378A (en) * 1980-08-04 1985-06-18 Hughes Aircraft Company Anodizable metallic contacts to mercury cadmium telleride
JPS5830170A (ja) * 1981-08-15 1983-02-22 Stanley Electric Co Ltd 化合物半導体素子およびその電極形成法
JPS5830171A (ja) * 1981-08-15 1983-02-22 Stanley Electric Co Ltd 化合物半導体素子およびその電極形成法
GB8303298D0 (en) * 1983-02-07 1983-03-09 Gen Electric Co Plc Temperature sensors
JPS605559A (ja) * 1983-06-23 1985-01-12 Nec Corp 半導体素子の電極構造
US4593307A (en) * 1983-06-30 1986-06-03 International Business Machines Corporation High temperature stable ohmic contact to gallium arsenide
FR2550886B1 (fr) * 1983-08-17 1986-10-24 Radiotechnique Compelec Procede de realisation de transistors de puissance incluant des moyens de protection contre les surcharges et dispositifs ainsi obtenus
JPH0722141B2 (ja) * 1984-03-07 1995-03-08 住友電気工業株式会社 半導体素子の製造方法
US4583110A (en) * 1984-06-14 1986-04-15 International Business Machines Corporation Intermetallic semiconductor ohmic contact
US5147484A (en) * 1987-10-19 1992-09-15 International Business Machines Corporation Method for producing multi-layer ceramic substrates with oxidation resistant metalization
US5565378A (en) * 1992-02-17 1996-10-15 Mitsubishi Denki Kabushiki Kaisha Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution
US5825052A (en) * 1994-08-26 1998-10-20 Rohm Co., Ltd. Semiconductor light emmitting device
JP4365568B2 (ja) * 2002-09-06 2009-11-18 独立行政法人産業技術総合研究所 ドーピング方法およびそれを用いた半導体素子
KR100845037B1 (ko) * 2006-08-02 2008-07-09 포항공과대학교 산학협력단 오믹 전극 및 그 형성 방법, 이를 구비하는 반도체 발광소자

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780427A (en) * 1969-04-25 1973-12-25 Monsanto Co Ohmic contact to zinc sulfide devices
US3818377A (en) * 1969-09-19 1974-06-18 Matsushita Electric Ind Co Ltd Oscillatory device utilizing pulse generating diode
NL7013227A (it) * 1970-09-08 1972-03-10 Philips Nv
US3716407A (en) * 1971-05-21 1973-02-13 Sprague Electric Co Electrical device having ohmic or low loss contacts
US3753804A (en) * 1971-08-31 1973-08-21 Philips Corp Method of manufacturing a semiconductor device
US3794883A (en) * 1973-02-01 1974-02-26 E Bylander Process for fabricating ge:hg infrared detector arrays and resulting article of manufacture

Also Published As

Publication number Publication date
JPS5042786A (it) 1975-04-18
USB470798I5 (it) 1976-01-20
CA1001774A (en) 1976-12-14
DE2422621A1 (de) 1974-12-05
FR2230078B1 (it) 1977-07-29
FR2230078A1 (it) 1974-12-13
US3987480A (en) 1976-10-19

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