IT1021200B - Dispositivo semiconduttore metodo per la sua fabbricazione e disposizione circuitale comprendente il dispositivo - Google Patents

Dispositivo semiconduttore metodo per la sua fabbricazione e disposizione circuitale comprendente il dispositivo

Info

Publication number
IT1021200B
IT1021200B IT27083/74A IT2708374A IT1021200B IT 1021200 B IT1021200 B IT 1021200B IT 27083/74 A IT27083/74 A IT 27083/74A IT 2708374 A IT2708374 A IT 2708374A IT 1021200 B IT1021200 B IT 1021200B
Authority
IT
Italy
Prior art keywords
manufacturing
circuit arrangement
arrangement including
semiconductive
device method
Prior art date
Application number
IT27083/74A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1021200B publication Critical patent/IT1021200B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004Base region of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT27083/74A 1973-09-12 1974-09-09 Dispositivo semiconduttore metodo per la sua fabbricazione e disposizione circuitale comprendente il dispositivo IT1021200B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7312547A NL7312547A (nl) 1973-09-12 1973-09-12 Halfgeleiderinrichting, werkwijze ter vervaardiging daarvan en schakeling bevattende de inrichting.

Publications (1)

Publication Number Publication Date
IT1021200B true IT1021200B (it) 1978-01-30

Family

ID=19819582

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27083/74A IT1021200B (it) 1973-09-12 1974-09-09 Dispositivo semiconduttore metodo per la sua fabbricazione e disposizione circuitale comprendente il dispositivo

Country Status (12)

Country Link
US (1) US3977020A (it)
JP (1) JPS5057386A (it)
AU (1) AU7304574A (it)
BE (1) BE819748A (it)
CA (1) CA1012259A (it)
CH (1) CH574166A5 (it)
DE (1) DE2442810A1 (it)
FR (1) FR2243524A1 (it)
GB (1) GB1482803A (it)
IT (1) IT1021200B (it)
NL (1) NL7312547A (it)
SE (1) SE401966B (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147266A (en) * 1975-06-13 1976-12-17 Nec Corp Semiconductor device
JPS5250173A (en) * 1975-10-20 1977-04-21 Matsushita Electronics Corp Semiconductor device
JPS5250174A (en) * 1975-10-20 1977-04-21 Matsushita Electronics Corp Negative resistance element
JPS5278377A (en) * 1975-12-25 1977-07-01 Nec Corp Semiconductor device
US4048647A (en) * 1976-09-10 1977-09-13 Northern Telecom Limited Solid state disconnect device
JPS53105383A (en) * 1977-02-25 1978-09-13 Shindengen Electric Mfg Silicon transistor
IT1084368B (it) * 1977-07-08 1985-05-25 Ates Componenti Elettron Transistore di potenza con alta velocita' di spegnimento e mezzi per ottenerlo.
JPS5457963U (it) * 1977-09-29 1979-04-21
JPS5939907B2 (ja) * 1978-05-18 1984-09-27 松下電子工業株式会社 電力用トランジスタ
US4388634A (en) * 1980-12-04 1983-06-14 Rca Corporation Transistor with improved second breakdown capability
JPS57106243U (it) * 1980-12-23 1982-06-30
JPS5890774A (ja) * 1981-11-25 1983-05-30 Nippon Telegr & Teleph Corp <Ntt> バイボ−ラ型トランジスタ
IT1221867B (it) * 1983-05-16 1990-07-12 Ates Componenti Elettron Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable
US5321279A (en) * 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting
US5606195A (en) * 1995-12-26 1997-02-25 Hughes Electronics High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes
US6784747B1 (en) 2003-03-20 2004-08-31 Analog Devices, Inc. Amplifier circuit
US6816015B2 (en) 2003-03-27 2004-11-09 Analog Devices, Inc. Amplifier circuit having a plurality of first and second base resistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE791487A (fr) * 1971-11-18 1973-03-16 Rca Corp Dispositif semiconducteur

Also Published As

Publication number Publication date
BE819748A (fr) 1975-03-10
SE401966B (sv) 1978-06-05
NL7312547A (nl) 1975-03-14
US3977020A (en) 1976-08-24
JPS5057386A (it) 1975-05-19
DE2442810A1 (de) 1975-03-13
CH574166A5 (it) 1976-03-31
AU7304574A (en) 1976-03-11
CA1012259A (en) 1977-06-14
FR2243524A1 (it) 1975-04-04
GB1482803A (en) 1977-08-17
SE7411362L (it) 1975-03-13

Similar Documents

Publication Publication Date Title
DK144407C (da) Elektrodiatermiapparat
SE406754B (sv) Arkvendningsanordning
IT1005664B (it) Dispositivo semiconduttore
IT1006728B (it) Conduttore elettrico e metodo per la sua fabbricazione
IT1015298B (it) Dispositivo semiconduttore
SE408109B (sv) Halvledaranordning
SE403184B (sv) Nivametanordning
TR18458A (tr) Muflar meydana getirmeye mahsus tertibat
IT1021200B (it) Dispositivo semiconduttore metodo per la sua fabbricazione e disposizione circuitale comprendente il dispositivo
NL174784B (nl) Electrische verbindingsinrichting.
SE399476B (sv) Antislirningsanordning
IT943189B (it) Dispositivo semiconduttore e proce dimento per la sua fabbricazione
IT1014982B (it) Dispositivo semiconduttore
IT1000635B (it) Dispositivo semiconduttore e proce dimento per la sua fabbricazione
IT1024876B (it) Dispositivo semiconduttore
IT1047152B (it) Dispositivo semiconduttore e procedimento per la sua fabbricazione
AT351972B (de) Rueckstrahlvorrichtung
SE409386C (sv) Halvledaranordning
SE416496B (sv) Ansettningsanordning for granater
BR7404720D0 (pt) Dispositivo embobinador
IT1015296B (it) Dispositivo semiconduttore
NL7415269A (nl) Meetinrichting en werkwijze.
IT1012166B (it) Dispositivo semiconduttore
IT1015565B (it) Dispositivo semiconduttore
IT1025835B (it) Dispositivo semiconduttore