IN2012DN03251A - - Google Patents

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Publication number
IN2012DN03251A
IN2012DN03251A IN3251DEN2012A IN2012DN03251A IN 2012DN03251 A IN2012DN03251 A IN 2012DN03251A IN 3251DEN2012 A IN3251DEN2012 A IN 3251DEN2012A IN 2012DN03251 A IN2012DN03251 A IN 2012DN03251A
Authority
IN
India
Prior art keywords
substrate
core
terminals
coupled
layers
Prior art date
Application number
Inventor
Qing Ma
Chuan Hu
Patrick Morrow
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of IN2012DN03251A publication Critical patent/IN2012DN03251A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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    • H05K2201/096Vertically aligned vias, holes or stacked vias
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
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Abstract

Disclosed are embodiments of a substrate for an integrated circuit (IC) device. The substrate includes a core comprised of two or more discrete glass layers that have been bonded together. A separate bonding layer may be disposed between adjacent glass layers to couple these layers together. The substrate may also include build-up structures on opposing sides of the multi-layer glass core, or perhaps on one side of the core. Electrically conductive terminals may be formed on both sides of the substrate, and an IC die may be coupled with the terminals on one side of the substrate. The terminals on the opposing side may be coupled with a next-level component, such as a circuit board. One or more conductors extend through the multi-layer glass core, and one or more of the conductors may be electrically coupled with the build-up structures disposed over the core. Other embodiments are described and claimed.
IN3251DEN2012 2009-12-17 2010-11-01 IN2012DN03251A (en)

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KR101466582B1 (en) 2014-11-28
US20110147059A1 (en) 2011-06-23
CN102656685B (en) 2016-08-17
TW201138033A (en) 2011-11-01
KR20120095420A (en) 2012-08-28
GB2488265A (en) 2012-08-22
GB2488265B (en) 2014-04-30
JP2015043438A (en) 2015-03-05
US9761514B2 (en) 2017-09-12
GB201208343D0 (en) 2012-06-27
TWI467717B (en) 2015-01-01
DE112010004888T5 (en) 2012-10-18
DE112010004888B4 (en) 2019-02-07
US9420707B2 (en) 2016-08-16
US20160322290A1 (en) 2016-11-03

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