IL61852A - Method and apparatus for stabilizing the edge positions of a crystalline ribbon drawn from a melt - Google Patents
Method and apparatus for stabilizing the edge positions of a crystalline ribbon drawn from a meltInfo
- Publication number
- IL61852A IL61852A IL61852A IL6185281A IL61852A IL 61852 A IL61852 A IL 61852A IL 61852 A IL61852 A IL 61852A IL 6185281 A IL6185281 A IL 6185281A IL 61852 A IL61852 A IL 61852A
- Authority
- IL
- Israel
- Prior art keywords
- stabilizing
- melt
- edge positions
- ribbon drawn
- crystalline ribbon
- Prior art date
Links
- 239000000155 melt Substances 0.000 title 1
- 230000000087 stabilizing effect Effects 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/109,865 US4661200A (en) | 1980-01-07 | 1980-01-07 | String stabilized ribbon growth |
US21474180A | 1980-12-11 | 1980-12-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
IL61852A true IL61852A (en) | 1984-05-31 |
Family
ID=26807452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL61852A IL61852A (en) | 1980-01-07 | 1981-01-05 | Method and apparatus for stabilizing the edge positions of a crystalline ribbon drawn from a melt |
Country Status (6)
Country | Link |
---|---|
CA (1) | CA1169336A (it) |
DE (1) | DE3100245A1 (it) |
FR (1) | FR2473072A1 (it) |
GB (3) | GB2067920B (it) |
IL (1) | IL61852A (it) |
IT (1) | IT1143254B (it) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4689109A (en) * | 1980-12-11 | 1987-08-25 | Sachs Emanuel M | String stabilized ribbon growth a method for seeding same |
US4659421A (en) * | 1981-10-02 | 1987-04-21 | Energy Materials Corporation | System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
DE3240245A1 (de) * | 1982-10-29 | 1984-05-03 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum herstellen von bandfoermigen siliziumkoerpern fuer solarzellen |
DE3565558D1 (en) * | 1984-07-31 | 1988-11-17 | Siemens Ag | Process and apparatus for making silicon crystal films with a horizontal pulling direction |
FR2568490B1 (fr) * | 1984-08-02 | 1986-12-05 | Comp Generale Electricite | Procede et dispositif pour deposer une couche de silicium polycristallin sur un ruban de carbone |
US4861416A (en) * | 1985-04-04 | 1989-08-29 | The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration | Ribbon growing method and apparatus |
US6402839B1 (en) | 1998-08-14 | 2002-06-11 | Ebara Solar, Inc. | System for stabilizing dendritic web crystal growth |
US6482261B2 (en) | 2000-12-29 | 2002-11-19 | Ebara Solar, Inc. | Magnetic field furnace |
DE60316337T2 (de) * | 2002-10-18 | 2008-06-05 | Evergreen Solar Inc., Marlborough | Verfahren und vorrichtung zur kristallzüchtung |
US6814802B2 (en) | 2002-10-30 | 2004-11-09 | Evergreen Solar, Inc. | Method and apparatus for growing multiple crystalline ribbons from a single crucible |
US20080134964A1 (en) * | 2006-12-06 | 2008-06-12 | Evergreen Solar, Inc. | System and Method of Forming a Crystal |
FR2913434B1 (fr) * | 2007-03-08 | 2009-11-20 | Apollon Solar | Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins. |
WO2009029741A1 (en) * | 2007-08-31 | 2009-03-05 | Evergreen Solar, Inc. | String with reduced wetting for ribbon crystals |
US8304057B2 (en) | 2007-08-31 | 2012-11-06 | Max Era, Inc. | Ribbon crystal end string with multiple individual strings |
WO2010021967A1 (en) | 2008-08-18 | 2010-02-25 | Evergreen Solar, Inc. | Controlling transport of gas borne contaminants across a ribbon surface |
EP2622648A1 (en) * | 2010-10-01 | 2013-08-07 | Evergreen Solar, Inc. | Sheet wafer processing as a function of wafer weight |
US20120164379A1 (en) * | 2010-12-22 | 2012-06-28 | Evergreen Solar, Inc. | Wide Sheet Wafer |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB796878A (en) * | 1955-06-27 | 1958-06-18 | Telefunken Gmbh | Improvements in or relating to methods of stirring molten electrically conductive material |
NL113205C (it) * | 1958-08-28 | 1900-01-01 | ||
US3129061A (en) * | 1961-03-27 | 1964-04-14 | Westinghouse Electric Corp | Process for producing an elongated unitary body of semiconductor material crystallizing in the diamond cubic lattice structure and the product so produced |
US3298795A (en) * | 1964-03-23 | 1967-01-17 | Westinghouse Electric Corp | Process for controlling dendritic crystal growth |
NL124684C (it) * | 1964-07-29 | 1900-01-01 | ||
US3370927A (en) * | 1966-02-28 | 1968-02-27 | Westinghouse Electric Corp | Method of angularly pulling continuous dendritic crystals |
GB1271493A (en) * | 1968-05-09 | 1972-04-19 | Stanelco Thermatron Ltd | Improved treatment process |
US3639718A (en) * | 1970-06-15 | 1972-02-01 | Little Inc A | Pressure- and temperature-controlled crystal growing apparatus |
US3865554A (en) * | 1971-09-23 | 1975-02-11 | Little Inc A | Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique |
GB1498925A (en) * | 1975-02-07 | 1978-01-25 | Philips Electronic Associated | Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured |
DE2520764A1 (de) * | 1975-05-09 | 1976-11-18 | Siemens Ag | Verfahren und vorrichtung zum herstellen von bandfoermigen einkristallen aus halbleitermaterial |
-
1980
- 1980-12-22 CA CA000367354A patent/CA1169336A/en not_active Expired
- 1980-12-30 GB GB8041489A patent/GB2067920B/en not_active Expired
-
1981
- 1981-01-05 IL IL61852A patent/IL61852A/xx not_active IP Right Cessation
- 1981-01-07 DE DE19813100245 patent/DE3100245A1/de active Granted
- 1981-01-07 FR FR8100172A patent/FR2473072A1/fr active Granted
- 1981-01-07 IT IT67008/81A patent/IT1143254B/it active
-
1984
- 1984-01-12 GB GB08400735A patent/GB2135595B/en not_active Expired
- 1984-01-12 GB GB08400734A patent/GB2135594B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1169336A (en) | 1984-06-19 |
IT8167008A0 (it) | 1981-01-07 |
GB2135594A (en) | 1984-09-05 |
GB2067920A (en) | 1981-08-05 |
IT1143254B (it) | 1986-10-22 |
GB2135595B (en) | 1985-05-22 |
FR2473072A1 (fr) | 1981-07-10 |
GB2135595A (en) | 1984-09-05 |
GB8400734D0 (en) | 1984-02-15 |
DE3100245A1 (de) | 1982-01-14 |
GB2135594B (en) | 1985-05-15 |
GB2067920B (en) | 1984-10-24 |
GB8400735D0 (en) | 1984-02-15 |
FR2473072B1 (it) | 1984-09-14 |
DE3100245C2 (it) | 1990-07-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
KB | Patent renewed | ||
EXP | Patent expired |