IL145653A0 - Fluorinated polymers, photoresists and processes for microlithography - Google Patents

Fluorinated polymers, photoresists and processes for microlithography

Info

Publication number
IL145653A0
IL145653A0 IL14565300A IL14565300A IL145653A0 IL 145653 A0 IL145653 A0 IL 145653A0 IL 14565300 A IL14565300 A IL 14565300A IL 14565300 A IL14565300 A IL 14565300A IL 145653 A0 IL145653 A0 IL 145653A0
Authority
IL
Israel
Prior art keywords
microlithography
photoresists
processes
fluorinated polymers
fluorinated
Prior art date
Application number
IL14565300A
Other languages
English (en)
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of IL145653A0 publication Critical patent/IL145653A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/186—Monomers containing fluorine with non-fluorinated comonomers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
IL14565300A 1999-05-04 2000-04-28 Fluorinated polymers, photoresists and processes for microlithography IL145653A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13237399P 1999-05-04 1999-05-04
PCT/US2000/011539 WO2000067072A1 (en) 1999-05-04 2000-04-28 Fluorinated polymers, photoresists and processes for microlithography

Publications (1)

Publication Number Publication Date
IL145653A0 true IL145653A0 (en) 2002-06-30

Family

ID=22453723

Family Applications (1)

Application Number Title Priority Date Filing Date
IL14565300A IL145653A0 (en) 1999-05-04 2000-04-28 Fluorinated polymers, photoresists and processes for microlithography

Country Status (10)

Country Link
EP (1) EP1183571B1 (de)
JP (1) JP4402304B2 (de)
KR (1) KR20020012206A (de)
CN (1) CN1227569C (de)
AU (1) AU4678100A (de)
DE (1) DE60044493D1 (de)
HK (1) HK1047797B (de)
IL (1) IL145653A0 (de)
TW (1) TWI227373B (de)
WO (1) WO2000067072A1 (de)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4327360B2 (ja) 1998-09-23 2009-09-09 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ホトレジスト、ポリマーおよびマイクロリソグラフィの方法
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
CN1224620C (zh) * 1999-05-04 2005-10-26 纳幕尔杜邦公司 生产氟化环氧化物的方法和有关聚合物
US6468712B1 (en) 2000-02-25 2002-10-22 Massachusetts Institute Of Technology Resist materials for 157-nm lithography
JP4923376B2 (ja) * 2000-04-04 2012-04-25 ダイキン工業株式会社 酸反応性基を有する新規なフッ素ポリマーおよびそれを用いた化学増幅型フォトレジスト組成物
SG100729A1 (en) * 2000-06-16 2003-12-26 Jsr Corp Radiation-sensitive resin composition
KR20030076228A (ko) 2000-06-21 2003-09-26 아사히 가라스 가부시키가이샤 레지스트 조성물
JP4190167B2 (ja) 2000-09-26 2008-12-03 富士フイルム株式会社 ポジ型レジスト組成物
US6764809B2 (en) 2000-10-12 2004-07-20 North Carolina State University CO2-processes photoresists, polymers, and photoactive compounds for microlithography
WO2002039186A2 (en) * 2000-11-09 2002-05-16 E. I. Du Pont De Nemours And Company Photoacid generators in photoresist compositions for microlithography
JP2004536327A (ja) 2000-11-29 2004-12-02 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ポリマーブレンド及びマイクロリソグラフィ用フォトレジスト組成物中でのそれらの使用
EP1354245A2 (de) * 2000-11-29 2003-10-22 E. I. du Pont de Nemours and Company Photoresistzusammensetzungen enthaltende, mehrschichtige elemente und deren verwendung in mikrolithographie
US6469220B2 (en) * 2000-12-25 2002-10-22 Shin-Etsu Chemical Co., Ltd. Tertiary alcohol compounds having an alicyclic structure
JP3800538B2 (ja) 2001-02-09 2006-07-26 旭硝子株式会社 レジスト組成物
US6794109B2 (en) 2001-02-23 2004-09-21 Massachusetts Institute Of Technology Low abosorbing resists for 157 nm lithography
EP1375540A4 (de) * 2001-02-23 2005-12-28 Daikin Ind Ltd Ethylenisches fluormonomer mit hydroxyl- oder fluoralkylcarbonylgruppe und durch polymerisation davon erhaltenes fluorpolymer
US6787286B2 (en) 2001-03-08 2004-09-07 Shipley Company, L.L.C. Solvents and photoresist compositions for short wavelength imaging
TWI226973B (en) 2001-03-19 2005-01-21 Fuji Photo Film Co Ltd Positive resist composition
WO2002084401A2 (en) * 2001-03-22 2002-10-24 Shipley Company, L.L.C. Photoresist compositions comprising solvents for short wavelength imaging
WO2002077712A2 (en) * 2001-03-22 2002-10-03 Shipley Company, L.L.C. Photoresist composition
AU2002255865A1 (en) 2001-03-22 2002-10-08 Shipley Company, L.L.C. Photoresist compositions for short wavelength imaging
WO2002088216A1 (fr) 2001-04-27 2002-11-07 Mitsui Chemicals, Inc. Polymeres cycloolefiniques fluores, procedes de preparation de monomeres cycloolefiniques fluores et polymeres associes, et leur application
US6936398B2 (en) * 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
US6686429B2 (en) 2001-05-11 2004-02-03 Clariant Finance (Bvi) Limited Polymer suitable for photoresist compositions
US6737215B2 (en) 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography
US6958123B2 (en) 2001-06-15 2005-10-25 Reflectivity, Inc Method for removing a sacrificial material with a compressed fluid
DE10131144B4 (de) * 2001-06-28 2006-01-19 Infineon Technologies Ag Verstärkung von Resiststrukturen aus fluorierten Resistpolymeren durch strukturelles Aufwachsen der Strukturen mittels gezieltem chemischem Anbinden von fluorierten Oligomeren
US20040234899A1 (en) * 2001-07-12 2004-11-25 Minoru Toriumi Method of forming fine pattern
KR100493015B1 (ko) * 2001-08-25 2005-06-07 삼성전자주식회사 감광성 폴리머 및 이를 포함하는 포토레지스트 조성물
JP4856826B2 (ja) * 2001-08-30 2012-01-18 株式会社ダイセル ビニルエーテル化合物の製造法
US20040248042A1 (en) * 2001-10-03 2004-12-09 Minoru Toriumi Method of forming fine pattern
EP1438635A1 (de) * 2001-10-26 2004-07-21 E. I. du Pont de Nemours and Company Fluorierte polymere mit estergruppen und photoresists für die mikrolithographie
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
JP2003186198A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
JP2003186197A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
US6800416B2 (en) * 2002-01-09 2004-10-05 Clariant Finance (Bvi) Ltd. Negative deep ultraviolet photoresist
JP3841400B2 (ja) 2002-02-26 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物
TW200403522A (en) * 2002-03-01 2004-03-01 Shipley Co Llc Photoresist compositions
TW200401164A (en) 2002-03-01 2004-01-16 Shipley Co Llc Photoresist compositions
JP2005519167A (ja) * 2002-03-01 2005-06-30 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ミクロ平版印刷法のための弗素化コポリマー
JP4010160B2 (ja) 2002-03-04 2007-11-21 旭硝子株式会社 レジスト組成物
TWI314247B (en) * 2002-03-04 2009-09-01 Shipley Co Llc Megative photordsists for short wavelength imaging
GB0207134D0 (en) 2002-03-27 2002-05-08 Cambridge Display Tech Ltd Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained
TWI307819B (en) 2002-05-28 2009-03-21 Arch Spec Chem Inc Acetal protected polymers and photoresist compositions thereof
US6806026B2 (en) 2002-05-31 2004-10-19 International Business Machines Corporation Photoresist composition
KR100955454B1 (ko) * 2002-05-31 2010-04-29 후지필름 가부시키가이샤 포지티브 레지스트 조성물
US20030235775A1 (en) 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
CA2493926A1 (en) * 2002-07-26 2004-02-05 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
AU2003259728A1 (en) 2002-08-09 2004-02-25 E. I. Du Pont De Nemours And Company Fluorinated monomers, fluorinated polymers having polycyclic groups with fused 4-membered heterocyclic rings, useful as photoresists, and processes for microlithography
ATE408173T1 (de) 2002-08-19 2008-09-15 Du Pont Fluorierte polymere, die zur verwendung als photoresists geeignet sind, und mikrolithographieverfahren
US7022457B2 (en) * 2002-10-03 2006-04-04 E. I. Du Pont De Nemours And Company Photoresists with hydroxylated, photoacid-cleavable groups
AU2003291279A1 (en) * 2002-11-05 2004-06-07 Honeywell International Inc. Fluorinated polymers
WO2004041877A1 (ja) 2002-11-07 2004-05-21 Asahi Glass Company, Limited 含フッ素ポリマー
US7264913B2 (en) 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
JP2006335774A (ja) * 2003-01-15 2006-12-14 Daikin Ind Ltd レジスト用含フッ素重合体の製造方法
US6919160B2 (en) 2003-02-20 2005-07-19 Air Products And Chemicals, Inc. Acrylic compounds for sub-200 nm photoresist compositions and methods for making and using same
TWI344578B (en) * 2003-02-20 2011-07-01 Promerus Llc Dissolution rate modifiers for photoresist compositions
US20040166434A1 (en) 2003-02-21 2004-08-26 Dammel Ralph R. Photoresist composition for deep ultraviolet lithography
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
JP4166598B2 (ja) * 2003-03-12 2008-10-15 富士フイルム株式会社 ポジ型レジスト組成物
WO2004088428A1 (ja) * 2003-03-28 2004-10-14 Tokyo Ohka Kogyo Co. Ltd. ホトレジスト組成物及びそれを用いたレジストパターン形成方法
JP2005099646A (ja) * 2003-03-28 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
US7150957B2 (en) * 2003-04-25 2006-12-19 International Business Machines Corporation Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions
JP4386710B2 (ja) 2003-04-28 2009-12-16 東京応化工業株式会社 ホトレジスト組成物、該ホトレジスト組成物用低分子化合物および高分子化合物
US7138550B2 (en) 2003-08-04 2006-11-21 Air Products And Chemicals, Inc. Bridged carbocyclic compounds and methods of making and using same
JP2005055697A (ja) * 2003-08-05 2005-03-03 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4383810B2 (ja) * 2003-09-10 2009-12-16 信越化学工業株式会社 含フッ素重合性環状オレフィン化合物
US7408013B2 (en) 2003-09-23 2008-08-05 Commonwealth Scientific And Industrial Research Organization Low-polydispersity photoimageable polymers and photoresists and processes for microlithography
US7473512B2 (en) 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US7081511B2 (en) 2004-04-05 2006-07-25 Az Electronic Materials Usa Corp. Process for making polyesters
US7507522B2 (en) 2004-05-20 2009-03-24 E. I. Dupont De Nemours And Company Photoresists comprising polymers derived from fluoroalcohol-substituted polycyclic monomers
JP4551701B2 (ja) 2004-06-14 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
US7691556B2 (en) 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US7595141B2 (en) 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
EP1813990A4 (de) * 2004-11-15 2010-06-23 Tokyo Ohka Kogyo Co Ltd Verfahren zur erzeugung einer resiststruktur
US7358035B2 (en) * 2005-06-23 2008-04-15 International Business Machines Corporation Topcoat compositions and methods of use thereof
US7553905B2 (en) 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
JP2007131704A (ja) 2005-11-09 2007-05-31 Fujifilm Corp 環状オレフィン系重合体、およびそれを用いた光学材料、偏光板および液晶表示装置
US20070191560A1 (en) * 2006-02-13 2007-08-16 Kipp Brian E Norbornenylmethyl fluoroalkyl ethers
JP5430821B2 (ja) 2006-09-19 2014-03-05 東京応化工業株式会社 レジストパターン形成方法
US7923200B2 (en) 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
EP2141964B1 (de) 2007-05-31 2011-09-07 Panasonic Corporation Organisches EL-Element und Herstellungsverfahren dafür
US7745077B2 (en) 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US20110233572A1 (en) 2009-06-04 2011-09-29 Panasonic Corporation Organic el display panel and method for manufacturing same
US8729534B2 (en) 2009-06-29 2014-05-20 Panasonic Corporation Organic EL display panel
US8901594B2 (en) 2010-12-20 2014-12-02 Panasonic Corporation Organic EL display panel and method for manufacturing same
US9746776B2 (en) * 2014-11-25 2017-08-29 E I Du Pont De Nemours And Company Low surface energy photoresist composition and process
CN111155349A (zh) * 2020-01-09 2020-05-15 浙江理工大学 一种负性光刻胶用纤维素基成膜树脂的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4207264B4 (de) * 1992-03-07 2005-07-28 Clariant Gmbh Negativ arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial
DE4207261C2 (de) * 1992-03-07 2000-03-16 Clariant Gmbh Styrol-Monomere mit 2,2-Bis-trifluormethyl-oxaethano-Brückengliedern, Polymere und deren Verwendung
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
JP4327360B2 (ja) * 1998-09-23 2009-09-09 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ホトレジスト、ポリマーおよびマイクロリソグラフィの方法

Also Published As

Publication number Publication date
KR20020012206A (ko) 2002-02-15
HK1047797A1 (en) 2003-03-07
HK1047797B (zh) 2006-07-28
JP4402304B2 (ja) 2010-01-20
WO2000067072A1 (en) 2000-11-09
AU4678100A (en) 2000-11-17
DE60044493D1 (de) 2010-07-15
EP1183571A1 (de) 2002-03-06
TWI227373B (en) 2005-02-01
CN1357116A (zh) 2002-07-03
EP1183571B1 (de) 2010-06-02
CN1227569C (zh) 2005-11-16
JP2002543469A (ja) 2002-12-17

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