IE35848B1 - Improvements in or relating to simiconductor devices - Google Patents

Improvements in or relating to simiconductor devices

Info

Publication number
IE35848B1
IE35848B1 IE1492/71A IE149271A IE35848B1 IE 35848 B1 IE35848 B1 IE 35848B1 IE 1492/71 A IE1492/71 A IE 1492/71A IE 149271 A IE149271 A IE 149271A IE 35848 B1 IE35848 B1 IE 35848B1
Authority
IE
Ireland
Prior art keywords
semi
film
gallium oxide
conductor
layer
Prior art date
Application number
IE1492/71A
Other versions
IE35848L (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IE35848L publication Critical patent/IE35848L/en
Publication of IE35848B1 publication Critical patent/IE35848B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1360073 Electroluminescence WESTERN ELECTRIC CO Inc 29 Nov 1971 [30 Nov 1970 10 May 1971] 55273/71 Heading C4S [Also in Division H1] The operating life of a Ga-containing PN junction light-emitting device is increased by thermally oxidizing the semi-conductor body in an aqueous oxidizing medium to form a film 16 of gallium oxide at least 100 Š and baking the device to expel excess moisture from the film 16. The device may emit coherent or non-coherent light, and suitable semi-conductor materials are GaP, GaAs, GaAsP, GaAlAs, AlGaP, InGaAs and InGaP. The GaP device shown comprises an N-type substrate 11 on which are formed, by liquid phase epitaxy or diffusion, a Te-doped N-type layer 12 and a Zn and O-doped P-type layer 13. The device is bonded to a header by a Si-Au preform and a Be-Au electrode 15 is provided on the layer 13. The gallium oxide film 16 is formed, after etching and rinsing, by immersion in an aqueous H 2 O 2 solution. Oxide formation is enhanced by the presence of a noble metal catalyst, either in the solution or bonded to the semi-conductor, e.g. as one of the electrodes, and excess moisture is driven off by heating at progressively higher temperatures up to 150-350‹ C. An additional glassy layer 17 of SiO 2 improves the passivating properties of the gallium oxide film 16. The invention may also be applied to PNPN light-emitting devices. Boiling water may also be used as the oxidizing medium. Telephone and other uses are disclosed. [GB1360073A]
IE1492/71A 1970-11-30 1971-11-25 Improvements in or relating to simiconductor devices IE35848B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9354470A 1970-11-30 1970-11-30
US14196471A 1971-05-10 1971-05-10

Publications (2)

Publication Number Publication Date
IE35848L IE35848L (en) 1972-05-30
IE35848B1 true IE35848B1 (en) 1976-06-09

Family

ID=26787656

Family Applications (1)

Application Number Title Priority Date Filing Date
IE1492/71A IE35848B1 (en) 1970-11-30 1971-11-25 Improvements in or relating to simiconductor devices

Country Status (13)

Country Link
JP (1) JPS5131153B1 (en)
BE (1) BE775868A (en)
CA (1) CA920285A (en)
CH (1) CH536035A (en)
DE (1) DE2158681C3 (en)
ES (1) ES397861A1 (en)
FR (1) FR2116159A5 (en)
GB (1) GB1360073A (en)
IE (1) IE35848B1 (en)
IT (1) IT945195B (en)
NL (1) NL155131B (en)
PH (1) PH11254A (en)
SE (1) SE367532B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3776789A (en) * 1972-05-01 1973-12-04 Ibm METHOD FOR PROTECTING GaAs WAFER SURFACES
FR2287776A1 (en) * 1974-10-09 1976-05-07 Lignes Telegraph Telephon LED array with diffused junctions - formed from semiconductor contg. zinc doped gallium
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5451548A (en) * 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
DE19509864C2 (en) * 1995-03-17 2001-10-04 Oce Printing Systems Gmbh Process for aging light-emitting diodes
WO2002015281A2 (en) * 2000-08-17 2002-02-21 Power Signal Technologies, Inc. Glass-to-metal hermetically sealed led array
DE10261675B4 (en) * 2002-12-31 2013-08-14 Osram Opto Semiconductors Gmbh Optoelectronic component with radiation-permeable electrical contact layer
CN111725363A (en) * 2020-05-28 2020-09-29 南京中电熊猫液晶显示科技有限公司 Miniature light-emitting diode backboard and manufacturing method thereof

Also Published As

Publication number Publication date
NL7116220A (en) 1972-06-01
IT945195B (en) 1973-05-10
NL155131B (en) 1977-11-15
IE35848L (en) 1972-05-30
ES397861A1 (en) 1975-04-16
DE2158681A1 (en) 1972-07-20
DE2158681B2 (en) 1975-08-14
GB1360073A (en) 1974-07-17
BE775868A (en) 1972-03-16
FR2116159A5 (en) 1972-07-07
PH11254A (en) 1977-10-28
JPS5131153B1 (en) 1976-09-04
CA920285A (en) 1973-01-30
SE367532B (en) 1974-05-27
DE2158681C3 (en) 1978-12-07
CH536035A (en) 1973-04-15

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