GB1446406A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1446406A
GB1446406A GB4378474A GB4378474A GB1446406A GB 1446406 A GB1446406 A GB 1446406A GB 4378474 A GB4378474 A GB 4378474A GB 4378474 A GB4378474 A GB 4378474A GB 1446406 A GB1446406 A GB 1446406A
Authority
GB
United Kingdom
Prior art keywords
semi
electrode
conductor
contact
slice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4378474A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cutler Hammer Inc
Original Assignee
Cutler Hammer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cutler Hammer Inc filed Critical Cutler Hammer Inc
Publication of GB1446406A publication Critical patent/GB1446406A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1446406 Semi-conductor devices CUTLERHAMMER Inc 9 Oct 1974 [9 Oct 1973] 43784/74 Heading H1K A semi-conductor device, such as a varactor diode, has a Schottky barrier 1 formed by a tantalum electrode 2 in contact with the device body, and an insulating film 7, 8 which includes a region 8 of Ta 2 O 5 around the electrode 2. The region 8 of Ta 2 O 5 is formed by oxidation of the electrode periphery and the main insulating film 7 is similarly formed from the semi-conductor body, which is of GaAs. The Schottky contact 2 is covered with a layer 6 of Au for connection to a Au ribbon by thermal compression bonding. An ohmic contact 5 of Ag, Sn or Pa is also applied to the device. The mesa structure is produced by etching a slice having a plurality of the electrodes 2, 6, the slice being later subdivided.
GB4378474A 1973-10-09 1974-10-09 Semiconductor devices Expired GB1446406A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US404303A US3886580A (en) 1973-10-09 1973-10-09 Tantalum-gallium arsenide schottky barrier semiconductor device

Publications (1)

Publication Number Publication Date
GB1446406A true GB1446406A (en) 1976-08-18

Family

ID=23599071

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4378474A Expired GB1446406A (en) 1973-10-09 1974-10-09 Semiconductor devices

Country Status (8)

Country Link
US (1) US3886580A (en)
JP (1) JPS5116288B2 (en)
BR (1) BR7404510A (en)
CA (1) CA992221A (en)
DE (1) DE2436449C3 (en)
FR (1) FR2246980B1 (en)
GB (1) GB1446406A (en)
IT (1) IT1013254B (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136878A (en) * 1974-09-14 1976-03-27 Tokyo Shibaura Electric Co Handotaisochi no seizohoho
JPS51141584A (en) * 1975-06-02 1976-12-06 Toshiba Corp A semiconductor unit
GB1485015A (en) * 1974-10-29 1977-09-08 Mullard Ltd Semi-conductor device manufacture
JPS5850428B2 (en) * 1975-04-16 1983-11-10 株式会社東芝 Mesa semiconductor device
US4201604A (en) * 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
US4075650A (en) * 1976-04-09 1978-02-21 Cutler-Hammer, Inc. Millimeter wave semiconductor device
US4307132A (en) * 1977-12-27 1981-12-22 International Business Machines Corp. Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer
US4179533A (en) * 1978-04-25 1979-12-18 The United States Of America As Represented By The Secretary Of The Navy Multi-refractory films for gallium arsenide devices
US4312113A (en) * 1978-10-23 1982-01-26 Eaton Corporation Method of making field-effect transistors with micron and submicron gate lengths
US4379005A (en) * 1979-10-26 1983-04-05 International Business Machines Corporation Semiconductor device fabrication
DE3005301C2 (en) * 1980-02-13 1985-11-21 Telefunken electronic GmbH, 7100 Heilbronn Varactor or mixer diode
DE3005302C2 (en) * 1980-02-13 1985-12-12 Telefunken electronic GmbH, 7100 Heilbronn Varactor or mixer diode
US4468682A (en) * 1981-11-12 1984-08-28 Gte Laboratories Incorporated Self-aligned high-frequency static induction transistor
US4474623A (en) * 1982-04-26 1984-10-02 Raytheon Company Method of passivating a semiconductor body
JPS6081859A (en) * 1983-10-11 1985-05-09 Matsushita Electric Ind Co Ltd Schottky barrier semiconductor device
US4935805A (en) * 1988-05-16 1990-06-19 Eaton Corporation T-type undercut electrical contact on a semiconductor substrate
US4923827A (en) * 1988-05-16 1990-05-08 Eaton Corporation T-type undercut electrical contact process on a semiconductor substrate
US5622877A (en) * 1993-03-02 1997-04-22 Ramot University Authority For Applied Research & Industrial Development Ltd. Method for making high-voltage high-speed gallium arsenide power Schottky diode
WO1998056039A1 (en) * 1997-06-03 1998-12-10 University Of Utah Research Foundation Utilizing inherent rectifying characteristics of a substrate in semiconductor devices
KR100586948B1 (en) * 2004-01-19 2006-06-07 삼성전기주식회사 Nitride semiconductor light emitting device
US7834367B2 (en) * 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB967002A (en) * 1961-05-05 1964-08-19 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3615929A (en) * 1965-07-08 1971-10-26 Texas Instruments Inc Method of forming epitaxial region of predetermined thickness and article of manufacture
US3672984A (en) * 1969-03-12 1972-06-27 Hitachi Ltd Method of forming the electrode of a semiconductor device
US3663279A (en) * 1969-11-19 1972-05-16 Bell Telephone Labor Inc Passivated semiconductor devices
US3756924A (en) * 1971-04-01 1973-09-04 Texas Instruments Inc Method of fabricating a semiconductor device
US3701931A (en) * 1971-05-06 1972-10-31 Ibm Gold tantalum-nitrogen high conductivity metallurgy
US3717563A (en) * 1971-06-09 1973-02-20 Ibm Method of adhering gold to an insulating layer on a semiconductor substrate

Also Published As

Publication number Publication date
US3886580A (en) 1975-05-27
IT1013254B (en) 1977-03-30
BR7404510A (en) 1976-02-10
DE2436449B2 (en) 1977-04-21
DE2436449A1 (en) 1975-04-24
JPS5116288B2 (en) 1976-05-22
CA992221A (en) 1976-06-29
FR2246980A1 (en) 1975-05-02
JPS5067560A (en) 1975-06-06
DE2436449C3 (en) 1980-06-19
FR2246980B1 (en) 1978-01-13

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee