FR2432785A1 - Semiconductor laser with double heterostructure - made from gallium arsenide and gallium aluminium arsenide, has low threshold value - Google Patents
Semiconductor laser with double heterostructure - made from gallium arsenide and gallium aluminium arsenide, has low threshold valueInfo
- Publication number
- FR2432785A1 FR2432785A1 FR7823136A FR7823136A FR2432785A1 FR 2432785 A1 FR2432785 A1 FR 2432785A1 FR 7823136 A FR7823136 A FR 7823136A FR 7823136 A FR7823136 A FR 7823136A FR 2432785 A1 FR2432785 A1 FR 2432785A1
- Authority
- FR
- France
- Prior art keywords
- layer
- pref
- arsenide
- gallium
- threshold value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Laser has a monocrystal substrate(s) covered by an n-type confinement layer (1), then an active layer(2) of p-type GaAs, followed by a p-type confinement layer(3), and a p-type contact layer(4). Layers(3,4) are neutralised by proton bombardment except along a thin ribbon at the centre of the structure; but this neutralisation does not reach layer(2), which has a high dopant concn. whereas layer(3) has a low dopant concn. Substrate(S) is pref. n-GaAs with layer(1) of n-Ga1 AlxAs; and layer(2) is p-Ga1-yAlyAs. Layer(3) is pref. p-Ga gamma-zAlzAs; whereas layer(4) is p-GaAs. Layer(2) is pref. doped to above 3x10 17 atoms/cc, but layer(4) is doped to below 5x1017/cc. The dopant used in both layers (2,3) is pref. Ge; and z is pref. above 0.4 in layer(3). Used for optoelectronics, esp. optical telecommunications, where a threshold current of 45 mA can be obtd.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7823136A FR2432785A1 (en) | 1978-08-04 | 1978-08-04 | Semiconductor laser with double heterostructure - made from gallium arsenide and gallium aluminium arsenide, has low threshold value |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7823136A FR2432785A1 (en) | 1978-08-04 | 1978-08-04 | Semiconductor laser with double heterostructure - made from gallium arsenide and gallium aluminium arsenide, has low threshold value |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2432785A1 true FR2432785A1 (en) | 1980-02-29 |
FR2432785B1 FR2432785B1 (en) | 1981-11-20 |
Family
ID=9211626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7823136A Granted FR2432785A1 (en) | 1978-08-04 | 1978-08-04 | Semiconductor laser with double heterostructure - made from gallium arsenide and gallium aluminium arsenide, has low threshold value |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2432785A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4456998A (en) * | 1980-06-02 | 1984-06-26 | Kokusai Denshin Denwa Kabushiki Kaisha | Semiconductor laser |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2368164A1 (en) * | 1976-10-13 | 1978-05-12 | Int Standard Electric Corp | DOUBLE BAND SEMICONDUCTOR LASER |
-
1978
- 1978-08-04 FR FR7823136A patent/FR2432785A1/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2368164A1 (en) * | 1976-10-13 | 1978-05-12 | Int Standard Electric Corp | DOUBLE BAND SEMICONDUCTOR LASER |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4456998A (en) * | 1980-06-02 | 1984-06-26 | Kokusai Denshin Denwa Kabushiki Kaisha | Semiconductor laser |
Also Published As
Publication number | Publication date |
---|---|
FR2432785B1 (en) | 1981-11-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |