FR2432785A1 - Semiconductor laser with double heterostructure - made from gallium arsenide and gallium aluminium arsenide, has low threshold value - Google Patents

Semiconductor laser with double heterostructure - made from gallium arsenide and gallium aluminium arsenide, has low threshold value

Info

Publication number
FR2432785A1
FR2432785A1 FR7823136A FR7823136A FR2432785A1 FR 2432785 A1 FR2432785 A1 FR 2432785A1 FR 7823136 A FR7823136 A FR 7823136A FR 7823136 A FR7823136 A FR 7823136A FR 2432785 A1 FR2432785 A1 FR 2432785A1
Authority
FR
France
Prior art keywords
layer
pref
arsenide
gallium
threshold value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7823136A
Other languages
French (fr)
Other versions
FR2432785B1 (en
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Individual
Original Assignee
Individual
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Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR7823136A priority Critical patent/FR2432785A1/en
Publication of FR2432785A1 publication Critical patent/FR2432785A1/en
Application granted granted Critical
Publication of FR2432785B1 publication Critical patent/FR2432785B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Laser has a monocrystal substrate(s) covered by an n-type confinement layer (1), then an active layer(2) of p-type GaAs, followed by a p-type confinement layer(3), and a p-type contact layer(4). Layers(3,4) are neutralised by proton bombardment except along a thin ribbon at the centre of the structure; but this neutralisation does not reach layer(2), which has a high dopant concn. whereas layer(3) has a low dopant concn. Substrate(S) is pref. n-GaAs with layer(1) of n-Ga1 AlxAs; and layer(2) is p-Ga1-yAlyAs. Layer(3) is pref. p-Ga gamma-zAlzAs; whereas layer(4) is p-GaAs. Layer(2) is pref. doped to above 3x10 17 atoms/cc, but layer(4) is doped to below 5x1017/cc. The dopant used in both layers (2,3) is pref. Ge; and z is pref. above 0.4 in layer(3). Used for optoelectronics, esp. optical telecommunications, where a threshold current of 45 mA can be obtd.
FR7823136A 1978-08-04 1978-08-04 Semiconductor laser with double heterostructure - made from gallium arsenide and gallium aluminium arsenide, has low threshold value Granted FR2432785A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7823136A FR2432785A1 (en) 1978-08-04 1978-08-04 Semiconductor laser with double heterostructure - made from gallium arsenide and gallium aluminium arsenide, has low threshold value

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7823136A FR2432785A1 (en) 1978-08-04 1978-08-04 Semiconductor laser with double heterostructure - made from gallium arsenide and gallium aluminium arsenide, has low threshold value

Publications (2)

Publication Number Publication Date
FR2432785A1 true FR2432785A1 (en) 1980-02-29
FR2432785B1 FR2432785B1 (en) 1981-11-20

Family

ID=9211626

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7823136A Granted FR2432785A1 (en) 1978-08-04 1978-08-04 Semiconductor laser with double heterostructure - made from gallium arsenide and gallium aluminium arsenide, has low threshold value

Country Status (1)

Country Link
FR (1) FR2432785A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4456998A (en) * 1980-06-02 1984-06-26 Kokusai Denshin Denwa Kabushiki Kaisha Semiconductor laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2368164A1 (en) * 1976-10-13 1978-05-12 Int Standard Electric Corp DOUBLE BAND SEMICONDUCTOR LASER

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2368164A1 (en) * 1976-10-13 1978-05-12 Int Standard Electric Corp DOUBLE BAND SEMICONDUCTOR LASER

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4456998A (en) * 1980-06-02 1984-06-26 Kokusai Denshin Denwa Kabushiki Kaisha Semiconductor laser

Also Published As

Publication number Publication date
FR2432785B1 (en) 1981-11-20

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