IE35680B1 - Improvements in or relating to information storage devices - Google Patents
Improvements in or relating to information storage devicesInfo
- Publication number
- IE35680B1 IE35680B1 IE1218/71A IE121871A IE35680B1 IE 35680 B1 IE35680 B1 IE 35680B1 IE 1218/71 A IE1218/71 A IE 1218/71A IE 121871 A IE121871 A IE 121871A IE 35680 B1 IE35680 B1 IE 35680B1
- Authority
- IE
- Ireland
- Prior art keywords
- pair
- electrodes
- electrode
- phase
- per bit
- Prior art date
Links
- 238000001465 metallisation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76875—Two-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76883—Three-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76891—Four-Phase CCD
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Semiconductor Memories (AREA)
Abstract
Smith-Strain 19-6 CHARGE COUPLED DEVICE of the disclosure A Charge Coupled Device (CCD) structure employing two levels of electrode metallization. The field plate electrodes are arranged in pairs with the second one of each pair partially overlapping and insulated from the first one of its pair and the first one of the next pair. The structure can be operated two-phase with four electrodes per bit and three-phase with three electrodes per bit by providing suitable amounts of electrode overlap and suitable drive circuitry. A particularly advantageous mode of two-phase operation with four electrodes per bit is enabled by providing asymmetrical overlapping of electrodes, the second electrode of each pair overlapping the first electrode of its pair more than the first electrode of the next pair. 8 electrodes per bit and three-phase with three electrodes
[CA1075811A]
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8502670A | 1970-10-29 | 1970-10-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
IE35680L IE35680L (en) | 1972-04-29 |
IE35680B1 true IE35680B1 (en) | 1976-04-28 |
Family
ID=22188999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IE1218/71A IE35680B1 (en) | 1970-10-29 | 1971-09-29 | Improvements in or relating to information storage devices |
Country Status (14)
Country | Link |
---|---|
JP (1) | JPS5310817B1 (en) |
KR (1) | KR780000481B1 (en) |
BE (1) | BE774391A (en) |
CA (1) | CA1075811A (en) |
CH (1) | CH569342A5 (en) |
DE (1) | DE2153675C3 (en) |
ES (1) | ES396891A1 (en) |
FR (1) | FR2111924B1 (en) |
GB (1) | GB1344646A (en) |
IE (1) | IE35680B1 (en) |
IT (1) | IT939683B (en) |
NL (1) | NL163061C (en) |
SE (1) | SE379111B (en) |
ZA (1) | ZA717200B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4646119A (en) * | 1971-01-14 | 1987-02-24 | Rca Corporation | Charge coupled circuits |
GB1444047A (en) * | 1973-02-28 | 1976-07-28 | Hitachi Ltd | Charge transfer semiconductor devices and methods of fabricating such devices |
NL7409793A (en) * | 1973-08-01 | 1975-02-04 | Trw Inc | ASYMMETRIC LOAD TRANSFER DEVICE. |
JPS58184760A (en) * | 1982-04-22 | 1983-10-28 | Sony Corp | Charge transfer element |
NL8300366A (en) * | 1983-02-01 | 1984-09-03 | Philips Nv | IMAGE RECORDING DEVICE. |
DE3817153A1 (en) * | 1988-05-19 | 1989-11-30 | Messerschmitt Boelkow Blohm | SEMICONDUCTOR COMPONENT |
-
1971
- 1971-06-02 CA CA114,670A patent/CA1075811A/en not_active Expired
- 1971-09-29 IE IE1218/71A patent/IE35680B1/en unknown
- 1971-10-21 SE SE7113345A patent/SE379111B/xx unknown
- 1971-10-25 BE BE774391A patent/BE774391A/en not_active IP Right Cessation
- 1971-10-26 GB GB4960371A patent/GB1344646A/en not_active Expired
- 1971-10-28 IT IT53763/71A patent/IT939683B/en active
- 1971-10-28 NL NL7114859.A patent/NL163061C/en not_active IP Right Cessation
- 1971-10-28 ES ES396891A patent/ES396891A1/en not_active Expired
- 1971-10-28 KR KR7101560A patent/KR780000481B1/en active
- 1971-10-28 FR FR7138817A patent/FR2111924B1/fr not_active Expired
- 1971-10-28 DE DE2153675A patent/DE2153675C3/en not_active Expired
- 1971-10-28 ZA ZA717200A patent/ZA717200B/en unknown
- 1971-10-28 CH CH1570071A patent/CH569342A5/xx not_active IP Right Cessation
- 1971-10-29 JP JP8568971A patent/JPS5310817B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CA1075811A (en) | 1980-04-15 |
ES396891A1 (en) | 1974-06-16 |
IT939683B (en) | 1973-02-10 |
SE379111B (en) | 1975-09-22 |
DE2153675C3 (en) | 1980-09-18 |
DE2153675B2 (en) | 1976-08-12 |
IE35680L (en) | 1972-04-29 |
NL163061C (en) | 1980-07-15 |
ZA717200B (en) | 1972-08-30 |
AU3398971A (en) | 1973-04-05 |
DE2153675A1 (en) | 1972-05-18 |
NL7114859A (en) | 1972-05-03 |
KR780000481B1 (en) | 1978-10-24 |
GB1344646A (en) | 1974-01-23 |
NL163061B (en) | 1980-02-15 |
BE774391A (en) | 1972-02-14 |
CH569342A5 (en) | 1975-11-14 |
FR2111924B1 (en) | 1976-03-26 |
FR2111924A1 (en) | 1972-06-09 |
JPS5310817B1 (en) | 1978-04-17 |
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