HUE046791T2 - Fotovoltaikus cella - Google Patents
Fotovoltaikus cellaInfo
- Publication number
- HUE046791T2 HUE046791T2 HUE11194664A HUE11194664A HUE046791T2 HU E046791 T2 HUE046791 T2 HU E046791T2 HU E11194664 A HUE11194664 A HU E11194664A HU E11194664 A HUE11194664 A HU E11194664A HU E046791 T2 HUE046791 T2 HU E046791T2
- Authority
- HU
- Hungary
- Prior art keywords
- amorphous silicon
- silicon film
- type amorphous
- photovoltaic cell
- type
- Prior art date
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 7
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Electromechanical Clocks (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005051174A JP4502845B2 (ja) | 2005-02-25 | 2005-02-25 | 光起電力素子 |
| JP2005052741A JP4744161B2 (ja) | 2005-02-28 | 2005-02-28 | 光起電力素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HUE046791T2 true HUE046791T2 (hu) | 2020-03-30 |
Family
ID=36581547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HUE11194664A HUE046791T2 (hu) | 2005-02-25 | 2006-02-24 | Fotovoltaikus cella |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7781669B2 (hu) |
| EP (2) | EP2439780B1 (hu) |
| AT (1) | ATE553501T1 (hu) |
| ES (1) | ES2385720T3 (hu) |
| HU (1) | HUE046791T2 (hu) |
Families Citing this family (63)
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|---|---|---|---|---|
| WO2009062117A1 (en) * | 2007-11-09 | 2009-05-14 | Sunpreme, Inc. | Low-cost solar cells and methods for their production |
| JP2011503910A (ja) * | 2007-11-19 | 2011-01-27 | アプライド マテリアルズ インコーポレイテッド | パターン付きエッチング剤を用いた太陽電池コンタクト形成プロセス |
| TW200939509A (en) * | 2007-11-19 | 2009-09-16 | Applied Materials Inc | Crystalline solar cell metallization methods |
| JP2009200419A (ja) * | 2008-02-25 | 2009-09-03 | Seiko Epson Corp | 太陽電池の製造方法 |
| US8076175B2 (en) * | 2008-02-25 | 2011-12-13 | Suniva, Inc. | Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation |
| US20090211623A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
| WO2010009297A2 (en) * | 2008-07-16 | 2010-01-21 | Applied Materials, Inc. | Hybrid heterojunction solar cell fabrication using a doping layer mask |
| TW201027766A (en) | 2008-08-27 | 2010-07-16 | Applied Materials Inc | Back contact solar cells using printed dielectric barrier |
| US8796066B2 (en) * | 2008-11-07 | 2014-08-05 | Sunpreme, Inc. | Low-cost solar cells and methods for fabricating low cost substrates for solar cells |
| US7951640B2 (en) * | 2008-11-07 | 2011-05-31 | Sunpreme, Ltd. | Low-cost multi-junction solar cells and methods for their production |
| US20100186802A1 (en) * | 2009-01-27 | 2010-07-29 | Peter Borden | Hit solar cell structure |
| US8722453B2 (en) | 2009-04-14 | 2014-05-13 | Mitsubishi Electric Corporation | Photovoltaic device and method for manufacturing the same |
| US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
| JP5535709B2 (ja) * | 2010-03-19 | 2014-07-02 | 三洋電機株式会社 | 太陽電池、その太陽電池を用いた太陽電池モジュール及び太陽電池の製造方法 |
| KR101579318B1 (ko) * | 2010-04-29 | 2015-12-21 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| US8686283B2 (en) * | 2010-05-04 | 2014-04-01 | Silevo, Inc. | Solar cell with oxide tunneling junctions |
| US20120318340A1 (en) * | 2010-05-04 | 2012-12-20 | Silevo, Inc. | Back junction solar cell with tunnel oxide |
| US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
| US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
| US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
| US9530925B2 (en) * | 2010-10-19 | 2016-12-27 | Air Products And Chemicals, Inc. | Conductive composition and method for making conductive features on thin film PV cells |
| KR101699299B1 (ko) | 2011-03-29 | 2017-01-24 | 엘지전자 주식회사 | 양면 수광형 태양전지 |
| US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
| KR20120137821A (ko) | 2011-06-13 | 2012-12-24 | 엘지전자 주식회사 | 태양전지 |
| KR101969032B1 (ko) * | 2011-09-07 | 2019-04-15 | 엘지전자 주식회사 | 태양전지 및 이의 제조방법 |
| CN104011882A (zh) | 2012-01-12 | 2014-08-27 | 应用材料公司 | 制造太阳能电池装置的方法 |
| DE102012104289A1 (de) | 2012-05-16 | 2013-11-21 | Roth & Rau Ag | Heterokontakt-Solarzelle und Verfahren zu deren Herstellung |
| EP3832737A1 (en) * | 2012-07-02 | 2021-06-09 | Meyer Burger (Germany) GmbH | Hetero-junction solar cell with edge isolation and method of manufacturing same |
| CN102842634A (zh) * | 2012-08-16 | 2012-12-26 | 常州天合光能有限公司 | 一种背发射极异质结太阳电池及制备方法 |
| US9461189B2 (en) | 2012-10-04 | 2016-10-04 | Solarcity Corporation | Photovoltaic devices with electroplated metal grids |
| US9865754B2 (en) * | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
| US9281436B2 (en) | 2012-12-28 | 2016-03-08 | Solarcity Corporation | Radio-frequency sputtering system with rotary target for fabricating solar cells |
| US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
| US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
| WO2014110520A1 (en) | 2013-01-11 | 2014-07-17 | Silevo, Inc. | Module fabrication of solar cells with low resistivity electrodes |
| CN109599450A (zh) | 2013-04-03 | 2019-04-09 | Lg电子株式会社 | 太阳能电池 |
| US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
| KR102018650B1 (ko) * | 2013-05-28 | 2019-11-04 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| JP6491602B2 (ja) * | 2013-10-30 | 2019-03-27 | 株式会社カネカ | 太陽電池の製造方法、および太陽電池モジュールの製造方法 |
| US11942561B2 (en) * | 2014-05-27 | 2024-03-26 | Maxeon Solar Pte. Ltd. | Shingled solar cell module |
| US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
| KR102219804B1 (ko) | 2014-11-04 | 2021-02-24 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
| EP3026713B1 (en) | 2014-11-28 | 2019-03-27 | LG Electronics Inc. | Solar cell and method for manufacturing the same |
| US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
| US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
| KR102272433B1 (ko) | 2015-06-30 | 2021-07-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| US10784396B2 (en) | 2015-09-30 | 2020-09-22 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell, solar cell module, and production method for solar cell |
| US10923610B2 (en) | 2015-09-30 | 2021-02-16 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell and solar cell module |
| US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
| US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
| US9496429B1 (en) | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
| KR101778128B1 (ko) * | 2016-01-20 | 2017-09-13 | 엘지전자 주식회사 | 태양전지 |
| US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
| US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
| US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
| JP2019179838A (ja) * | 2018-03-30 | 2019-10-17 | パナソニック株式会社 | 太陽電池セル、及び、太陽電池セルの製造方法 |
| DE102019123785A1 (de) | 2019-09-05 | 2021-03-11 | Meyer Burger (Germany) Gmbh | Rückseitenemitter-Solarzellenstruktur mit einem Heteroübergang sowie Verfahren und Vorrichtung zur Herstellung derselben |
| CN112002779A (zh) * | 2020-07-24 | 2020-11-27 | 隆基绿能科技股份有限公司 | 硅异质结太阳能电池及其制作方法 |
| CN114171629A (zh) * | 2020-08-21 | 2022-03-11 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及光伏组件 |
| CN114171630A (zh) * | 2020-08-21 | 2022-03-11 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及光伏组件 |
| CN114171631A (zh) * | 2020-08-21 | 2022-03-11 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及光伏组件 |
| CN114300565A (zh) * | 2020-09-22 | 2022-04-08 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池 |
| CN114628543A (zh) * | 2020-11-27 | 2022-06-14 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及其制作方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2944185A1 (de) * | 1979-11-02 | 1981-05-07 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Solarzelle |
| US4487989A (en) * | 1983-07-25 | 1984-12-11 | Atlantic Richfield Company | Contact for solar cell |
| US5034068A (en) * | 1990-02-23 | 1991-07-23 | Spectrolab, Inc. | Photovoltaic cell having structurally supporting open conductive back electrode structure, and method of fabricating the cell |
| US5213628A (en) | 1990-09-20 | 1993-05-25 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| JP2994716B2 (ja) | 1990-09-25 | 1999-12-27 | 三洋電機株式会社 | 光起電力装置 |
| JP2614561B2 (ja) | 1991-10-08 | 1997-05-28 | 三洋電機株式会社 | 光起電力素子 |
| US5705828A (en) | 1991-08-10 | 1998-01-06 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| JPH0795603A (ja) | 1993-09-24 | 1995-04-07 | Hitachi Ltd | 投射型カラーテレビジョン装置 |
| FR2711276B1 (fr) | 1993-10-11 | 1995-12-01 | Neuchatel Universite | Cellule photovoltaïque et procédé de fabrication d'une telle cellule. |
| JPH07249788A (ja) | 1994-03-11 | 1995-09-26 | Tonen Corp | 太陽電池 |
| JPH07249787A (ja) | 1994-03-11 | 1995-09-26 | Tonen Corp | 太陽電池 |
| JP3349308B2 (ja) | 1995-10-26 | 2002-11-25 | 三洋電機株式会社 | 光起電力素子 |
| JPH09153632A (ja) | 1995-11-30 | 1997-06-10 | Kyocera Corp | 光電変換装置 |
| JPH09181343A (ja) | 1995-12-26 | 1997-07-11 | Kyocera Corp | 光電変換装置 |
| JPH09181347A (ja) | 1995-12-27 | 1997-07-11 | Kyocera Corp | 光電変換装置 |
| JPH1012903A (ja) | 1996-06-26 | 1998-01-16 | Kyocera Corp | 光電変換装置 |
| JP3469729B2 (ja) | 1996-10-31 | 2003-11-25 | 三洋電機株式会社 | 太陽電池素子 |
| JPH11224954A (ja) | 1998-02-04 | 1999-08-17 | Sanyo Electric Co Ltd | 太陽電池、太陽電池モジュール、太陽電池モジュールの設置方法及び太陽電池の製造方法 |
| WO2001003205A1 (en) * | 1999-07-02 | 2001-01-11 | Digirad Corporation | Indirect back surface contact to semiconductor devices |
| JP3825585B2 (ja) * | 1999-07-26 | 2006-09-27 | 三洋電機株式会社 | 光起電力素子の製造方法 |
| JP3557148B2 (ja) | 2000-02-21 | 2004-08-25 | 三洋電機株式会社 | 太陽電池モジュール |
| JP2001345463A (ja) | 2000-05-31 | 2001-12-14 | Sanyo Electric Co Ltd | 光起電力装置及びその製造方法 |
| JP4169463B2 (ja) | 2000-08-29 | 2008-10-22 | 三洋電機株式会社 | 光起電力素子の製造方法 |
| JP4070483B2 (ja) * | 2002-03-05 | 2008-04-02 | 三洋電機株式会社 | 光起電力装置並びにその製造方法 |
| JP4107971B2 (ja) | 2003-01-17 | 2008-06-25 | 三洋電機株式会社 | 光起電力装置およびその製造方法 |
| JP4194379B2 (ja) * | 2003-01-22 | 2008-12-10 | 三洋電機株式会社 | 光起電力装置 |
| JP4171428B2 (ja) * | 2003-03-20 | 2008-10-22 | 三洋電機株式会社 | 光起電力装置 |
| JP4093892B2 (ja) * | 2003-03-25 | 2008-06-04 | 三洋電機株式会社 | 光起電力装置の製造方法 |
| JP4614655B2 (ja) | 2003-12-24 | 2011-01-19 | 三洋電機株式会社 | 光起電力装置の製造方法 |
-
2006
- 2006-02-24 EP EP11194664.6A patent/EP2439780B1/en active Active
- 2006-02-24 ES ES06250987T patent/ES2385720T3/es active Active
- 2006-02-24 EP EP06250987A patent/EP1696492B1/en active Active
- 2006-02-24 US US11/361,367 patent/US7781669B2/en not_active Ceased
- 2006-02-24 HU HUE11194664A patent/HUE046791T2/hu unknown
- 2006-02-24 AT AT06250987T patent/ATE553501T1/de active
-
2012
- 2012-08-23 US US13/592,613 patent/USRE45872E1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| ATE553501T1 (de) | 2012-04-15 |
| EP2439780B1 (en) | 2019-10-02 |
| ES2385720T3 (es) | 2012-07-30 |
| US7781669B2 (en) | 2010-08-24 |
| EP2439780A2 (en) | 2012-04-11 |
| EP2439780A3 (en) | 2015-05-27 |
| US20060283499A1 (en) | 2006-12-21 |
| USRE45872E1 (en) | 2016-01-26 |
| EP1696492B1 (en) | 2012-04-11 |
| EP1696492A1 (en) | 2006-08-30 |
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