JP4171428B2 - 光起電力装置 - Google Patents
光起電力装置 Download PDFInfo
- Publication number
- JP4171428B2 JP4171428B2 JP2004005071A JP2004005071A JP4171428B2 JP 4171428 B2 JP4171428 B2 JP 4171428B2 JP 2004005071 A JP2004005071 A JP 2004005071A JP 2004005071 A JP2004005071 A JP 2004005071A JP 4171428 B2 JP4171428 B2 JP 4171428B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- silicon layer
- amorphous semiconductor
- amorphous silicon
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 192
- 239000001257 hydrogen Substances 0.000 claims description 159
- 229910052739 hydrogen Inorganic materials 0.000 claims description 159
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 154
- 238000010248 power generation Methods 0.000 claims description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 description 207
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 56
- 239000000758 substrate Substances 0.000 description 55
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 44
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 33
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 20
- 239000000969 carrier Substances 0.000 description 19
- 230000004048 modification Effects 0.000 description 19
- 238000012986 modification Methods 0.000 description 19
- 230000007547 defect Effects 0.000 description 18
- 239000007789 gas Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000005215 recombination Methods 0.000 description 11
- 230000006798 recombination Effects 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 150000002431 hydrogen Chemical class 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 150000002500 ions Chemical group 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910008045 Si-Si Inorganic materials 0.000 description 2
- 229910006411 Si—Si Inorganic materials 0.000 description 2
- 229910001417 caesium ion Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 238000010913 antigen-directed enzyme pro-drug therapy Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
2a i型非晶質シリコン層(第1非晶質半導体層)
2b p型非晶質シリコン層(第2非晶質半導体層)
Claims (11)
- n型の結晶系半導体と、
前記結晶系半導体の表面上に形成され、実質的に発電に寄与しない小さい厚みを有する実質的に真性な第1非晶質半導体層と、
前記第1非晶質半導体層の表面上に形成されたp型の第2非晶質半導体層とを備え、
前記第1非晶質半導体層中に水素濃度のピークを有する、光起電力装置。 - p型の結晶系半導体と、
前記結晶系半導体の表面上に形成され、実質的に発電に寄与しない小さい厚みを有する実質的に真性な第1非晶質半導体層と、
前記第1非晶質半導体層の表面上に形成されたn型の第2非晶質半導体層とを備え、
前記第1非晶質半導体層中に水素濃度のピークを有する、光起電力装置。 - 前記第1非晶質半導体層と前記第2非晶質半導体層との界面の水素濃度は、前記第1非晶質半導体層中の水素濃度のピークよりも低い濃度に設定されている、請求項1又は2に記載の光起電力装置。
- 前記第1非晶質半導体層の水素濃度のピーク値と、前記第1非晶質半導体層の水素濃度の最小値との差は、9×1020原子/cm3以上である、請求項1〜3いずれか1項に記載の光起電力装置。
- 前記第1非晶質半導体層中の水素濃度のピークは、前記第1非晶質半導体層の厚み方向の中央部近傍に位置する、請求項1〜4のいずれか1項に記載の光起電力装置。
- 前記第1非晶質半導体層中の水素濃度のピークは、前記第1非晶質半導体層の厚み方向の中央部よりも、前記第1非晶質半導体層と前記第2非晶質半導体層との界面に近い側に位置する、請求項1〜5のいずれか1項に記載の光起電力装置。
- 前記第1非晶質半導体層中の水素濃度のピークは、前記第1非晶質半導体層の前記第2非晶質半導体層との界面近傍に位置する、請求項6に記載の光起電力装置。
- 前記第1非晶質半導体層中の水素濃度のピークは、2つのピークを有する、請求項6に記載の光起電力装置。
- 前記n型の結晶系半導体の裏面上に形成され、実質的に発電に寄与しない小さい厚みを有する実質的に真性な第3非晶質半導体層と、
前記第3非晶質半導体層の裏面上に形成されたn型の第4非晶質半導体層とをさらに備え、
前記第3非晶質半導体層中に水素濃度のピークを有する、請求項1、3〜8のいずれか1項に記載の光起電力装置。 - 前記p型の結晶系半導体の裏面上に形成され、実質的に発電に寄与しない小さい厚みを有する実質的に真性な第3非晶質半導体層と、
前記第3非晶質半導体層の裏面上に形成されたp型の第4非晶質半導体層とをさらに備え、
前記第3非晶質半導体層中に水素濃度のピークを有する、請求項2〜8のいずれか1項に記載の光起電力装置。 - 前記第3非晶質半導体層と前記第4非晶質半導体層との界面の水素濃度は、前記第3非晶質半導体層中の水素濃度のピークよりも低い濃度に設定されている、請求項9又は10に記載の光起電力装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004005071A JP4171428B2 (ja) | 2003-03-20 | 2004-01-13 | 光起電力装置 |
US10/793,844 US7863518B2 (en) | 2003-03-20 | 2004-03-08 | Photovoltaic device |
EP04251500A EP1460693B1 (en) | 2003-03-20 | 2004-03-17 | Photovoltaic Device |
CNB2004100294317A CN100466299C (zh) | 2003-03-20 | 2004-03-17 | 光生伏打装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003078115 | 2003-03-20 | ||
JP2004005071A JP4171428B2 (ja) | 2003-03-20 | 2004-01-13 | 光起電力装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004304160A JP2004304160A (ja) | 2004-10-28 |
JP4171428B2 true JP4171428B2 (ja) | 2008-10-22 |
Family
ID=32829018
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004005071A Expired - Lifetime JP4171428B2 (ja) | 2003-03-20 | 2004-01-13 | 光起電力装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7863518B2 (ja) |
EP (1) | EP1460693B1 (ja) |
JP (1) | JP4171428B2 (ja) |
CN (1) | CN100466299C (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012043124A1 (ja) | 2010-10-01 | 2012-04-05 | 株式会社カネカ | 光電変換装置の製造方法 |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1643564B1 (en) * | 2004-09-29 | 2019-01-16 | Panasonic Intellectual Property Management Co., Ltd. | Photovoltaic device |
JP2006128630A (ja) * | 2004-09-29 | 2006-05-18 | Sanyo Electric Co Ltd | 光起電力装置 |
ES2385720T3 (es) * | 2005-02-25 | 2012-07-30 | Sanyo Electric Co., Ltd. | Célula fotovoltaica |
US7755157B2 (en) * | 2005-03-29 | 2010-07-13 | Sanyo Electric Co., Ltd. | Photovoltaic device and manufacturing method of photovoltaic device |
US7375378B2 (en) | 2005-05-12 | 2008-05-20 | General Electric Company | Surface passivated photovoltaic devices |
DE202005019799U1 (de) * | 2005-12-13 | 2006-03-02 | Hahn-Meitner-Institut Berlin Gmbh | Amorph/kristalline Silizium-Heterosolarzelle |
DE102006007797B4 (de) * | 2006-02-20 | 2008-01-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung eines Halbleiterbauelements sowie dessen Verwendung |
JP4711851B2 (ja) * | 2006-02-24 | 2011-06-29 | 三洋電機株式会社 | 光起電力装置 |
DE102006027737A1 (de) * | 2006-06-10 | 2007-12-20 | Hahn-Meitner-Institut Berlin Gmbh | Einseitig kontaktierte Solarzelle mit Durchkontaktierungen und Verfahren zur Herstellung |
JP4660561B2 (ja) * | 2007-03-19 | 2011-03-30 | 三洋電機株式会社 | 光起電力装置 |
US8071179B2 (en) | 2007-06-29 | 2011-12-06 | Stion Corporation | Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials |
RU2369941C2 (ru) | 2007-08-01 | 2009-10-10 | Броня Цой | Преобразователь электромагнитного излучения (варианты) |
ES2422256T3 (es) * | 2007-11-09 | 2013-09-10 | Sunpreme Inc | Celdas solares de bajo coste y métodos para su producción |
JP2009200419A (ja) * | 2008-02-25 | 2009-09-03 | Seiko Epson Corp | 太陽電池の製造方法 |
WO2010033744A2 (en) * | 2008-09-19 | 2010-03-25 | Applied Materials, Inc. | Methods of making an emitter having a desired dopant profile |
US7964434B2 (en) * | 2008-09-30 | 2011-06-21 | Stion Corporation | Sodium doping method and system of CIGS based materials using large scale batch processing |
US7947524B2 (en) * | 2008-09-30 | 2011-05-24 | Stion Corporation | Humidity control and method for thin film photovoltaic materials |
US20110018103A1 (en) * | 2008-10-02 | 2011-01-27 | Stion Corporation | System and method for transferring substrates in large scale processing of cigs and/or cis devices |
FR2936905B1 (fr) * | 2008-10-02 | 2010-10-29 | Commissariat Energie Atomique | Cellule photovoltaique a heterojonction a deux dopages et procede de fabrication. |
US8796066B2 (en) * | 2008-11-07 | 2014-08-05 | Sunpreme, Inc. | Low-cost solar cells and methods for fabricating low cost substrates for solar cells |
US7951640B2 (en) * | 2008-11-07 | 2011-05-31 | Sunpreme, Ltd. | Low-cost multi-junction solar cells and methods for their production |
DE102008055036A1 (de) * | 2008-12-19 | 2010-07-08 | Q-Cells Se | Solarzelle |
KR101161209B1 (ko) | 2009-04-30 | 2012-07-02 | 주식회사 효성 | 함몰 전극형 hit 태양전지 및 그 제조방법 |
US8241943B1 (en) | 2009-05-08 | 2012-08-14 | Stion Corporation | Sodium doping method and system for shaped CIGS/CIS based thin film solar cells |
US8372684B1 (en) | 2009-05-14 | 2013-02-12 | Stion Corporation | Method and system for selenization in fabricating CIGS/CIS solar cells |
US8507786B1 (en) | 2009-06-27 | 2013-08-13 | Stion Corporation | Manufacturing method for patterning CIGS/CIS solar cells |
US8398772B1 (en) | 2009-08-18 | 2013-03-19 | Stion Corporation | Method and structure for processing thin film PV cells with improved temperature uniformity |
KR101139443B1 (ko) * | 2009-09-04 | 2012-04-30 | 엘지전자 주식회사 | 이종접합 태양전지와 그 제조방법 |
KR20120074276A (ko) * | 2009-09-17 | 2012-07-05 | 산요덴키가부시키가이샤 | 투명 도전막 및 이것을 구비한 장치 |
US8203118B2 (en) * | 2009-12-11 | 2012-06-19 | Honeywell International, Inc. | Ion-trap mass spectrometer driven by a monolithic photodiode array |
KR20110071374A (ko) * | 2009-12-21 | 2011-06-29 | 현대중공업 주식회사 | 후면전계형 이종접합 태양전지 및 그 제조방법 |
US8859880B2 (en) * | 2010-01-22 | 2014-10-14 | Stion Corporation | Method and structure for tiling industrial thin-film solar devices |
US8142521B2 (en) * | 2010-03-29 | 2012-03-27 | Stion Corporation | Large scale MOCVD system for thin film photovoltaic devices |
US9096930B2 (en) | 2010-03-29 | 2015-08-04 | Stion Corporation | Apparatus for manufacturing thin film photovoltaic devices |
US8461061B2 (en) | 2010-07-23 | 2013-06-11 | Stion Corporation | Quartz boat method and apparatus for thin film thermal treatment |
CN102386285B (zh) * | 2010-08-24 | 2014-12-10 | 森普雷姆有限公司 | 低成本太阳能电池和制造低成本太阳能电池用基板的方法 |
WO2012028717A1 (en) * | 2010-09-03 | 2012-03-08 | Oerlikon Solar Ag, Truebbach | Improved a-si:h absorber layer for a-si single- and multijunction thin film silicon solar cells |
WO2012132758A1 (ja) * | 2011-03-28 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置及び光電変換装置の製造方法 |
US8969711B1 (en) * | 2011-04-07 | 2015-03-03 | Magnolia Solar, Inc. | Solar cell employing nanocrystalline superlattice material and amorphous structure and method of constructing the same |
FR2974240A1 (fr) * | 2011-04-12 | 2012-10-19 | St Microelectronics Crolles 2 | Capteur eclaire par la face arriere a isolement par jonction |
DE102011052480A1 (de) | 2011-08-08 | 2013-02-14 | Roth & Rau Ag | Solarzelle und Verfahren zur Herstellung einer Solarzelle |
US20140238476A1 (en) * | 2011-10-27 | 2014-08-28 | Mitsubishi Electric Corporation | Photoelectric conversion device and manufacturing method thereof, and photoelectric conversion module |
CN102842635A (zh) * | 2012-08-16 | 2012-12-26 | 常州天合光能有限公司 | 一种非晶硅薄膜-p型晶体硅叠层太阳电池及制造工艺 |
US20140099780A1 (en) | 2012-10-05 | 2014-04-10 | International Business Machines Corporation | Laser Doping of Crystalline Semiconductors Using a Dopant-Containing Amorphous Silicon Stack For Dopant Source and Passivation |
KR101979843B1 (ko) * | 2013-03-13 | 2019-05-17 | 엘지전자 주식회사 | 태양전지 |
WO2015064354A1 (ja) * | 2013-11-01 | 2015-05-07 | パナソニックIpマネジメント株式会社 | 太陽電池 |
CN108431967B (zh) * | 2015-12-24 | 2021-08-31 | 株式会社钟化 | 光电转换装置的制造方法 |
KR101879363B1 (ko) | 2017-01-17 | 2018-08-16 | 엘지전자 주식회사 | 태양 전지 제조 방법 |
JP7346050B2 (ja) * | 2019-03-26 | 2023-09-19 | パナソニックホールディングス株式会社 | 太陽電池セルおよび太陽電池モジュール |
DE102019123758A1 (de) * | 2019-09-05 | 2021-03-11 | Schaeffler Technologies AG & Co. KG | Wellgetriebe zur variablen Ventilsteuerung einer Brennkraftmaschine |
DE102019123785A1 (de) | 2019-09-05 | 2021-03-11 | Meyer Burger (Germany) Gmbh | Rückseitenemitter-Solarzellenstruktur mit einem Heteroübergang sowie Verfahren und Vorrichtung zur Herstellung derselben |
JP2021044384A (ja) * | 2019-09-11 | 2021-03-18 | パナソニック株式会社 | 太陽電池セル |
CN114628543A (zh) * | 2020-11-27 | 2022-06-14 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及其制作方法 |
Family Cites Families (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4742384A (en) * | 1978-02-01 | 1988-05-03 | Rca Corporation | Structure for passivating a PN junction |
US4254426A (en) * | 1979-05-09 | 1981-03-03 | Rca Corporation | Method and structure for passivating semiconductor material |
DE3143513A1 (de) * | 1981-11-03 | 1983-05-19 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Verfahren zur herstellung von photovoltaischen solarzellen |
US4490733A (en) * | 1982-10-15 | 1984-12-25 | Sperry Corporation | Josephson device with tunneling barrier having low density of localized states and enhanced figures of merit |
JPS59113447A (ja) * | 1982-12-20 | 1984-06-30 | Canon Inc | 電子写真用光導電部材 |
JPS59119359A (ja) * | 1982-12-27 | 1984-07-10 | Canon Inc | 電子写真用光導電部材 |
JPS6045078A (ja) * | 1983-08-23 | 1985-03-11 | Canon Inc | 光導電部材 |
JPS6045257A (ja) * | 1983-08-23 | 1985-03-11 | Canon Inc | 電子写真用光導電部材 |
JPS60240169A (ja) * | 1984-05-15 | 1985-11-29 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
JPS6184656A (ja) * | 1984-10-03 | 1986-04-30 | Matsushita Electric Ind Co Ltd | 電子写真感光体 |
US5140397A (en) * | 1985-03-14 | 1992-08-18 | Ricoh Company, Ltd. | Amorphous silicon photoelectric device |
CA1321660C (en) * | 1985-11-05 | 1993-08-24 | Hideo Yamagishi | Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer |
EP0241111B1 (en) * | 1986-02-05 | 1991-04-10 | Canon Kabushiki Kaisha | Light-receiving member for electrophotography |
KR920007450B1 (ko) * | 1987-07-31 | 1992-09-01 | 마쯔시다덴기산교 가부시기가이샤 | 반도체장치 및 그 제조방법 |
US4816082A (en) | 1987-08-19 | 1989-03-28 | Energy Conversion Devices, Inc. | Thin film solar cell including a spatially modulated intrinsic layer |
CA1298639C (en) * | 1987-11-20 | 1992-04-07 | Katsumi Nakagawa | Pinjunction photovoltaic element with p or n-type semiconductor layercomprising non-single crystal material containing zn, se, te, h in anamount of 1 to 4 atomic % and a dopant and i-type semiconductor layer comprising non-single crystal si(h,f) material |
JP2846651B2 (ja) * | 1989-03-31 | 1999-01-13 | 三洋電機株式会社 | 光起電力装置 |
JP2724892B2 (ja) * | 1989-12-06 | 1998-03-09 | キヤノン株式会社 | アモルファスシリコン系pin型光電変換素子 |
US5213628A (en) | 1990-09-20 | 1993-05-25 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JP2719230B2 (ja) * | 1990-11-22 | 1998-02-25 | キヤノン株式会社 | 光起電力素子 |
JP2880322B2 (ja) * | 1991-05-24 | 1999-04-05 | キヤノン株式会社 | 堆積膜の形成方法 |
JPH0548130A (ja) * | 1991-08-07 | 1993-02-26 | Canon Inc | 半導体装置とその製造方法 |
US5705828A (en) | 1991-08-10 | 1998-01-06 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JP2841335B2 (ja) | 1991-11-13 | 1998-12-24 | 三洋電機株式会社 | 光起電力装置の製造方法 |
US5204272A (en) | 1991-12-13 | 1993-04-20 | United Solar Systems Corporation | Semiconductor device and microwave process for its manufacture |
JP2951146B2 (ja) * | 1992-04-15 | 1999-09-20 | キヤノン株式会社 | 光起電力デバイス |
CA2102948C (en) * | 1992-11-16 | 1998-10-27 | Keishi Saito | Photoelectric conversion element and power generation system using the same |
JP2733176B2 (ja) * | 1992-11-16 | 1998-03-30 | キヤノン株式会社 | 光起電力素子及びそれを用いた発電装置 |
JP2836718B2 (ja) * | 1992-12-11 | 1998-12-14 | キヤノン株式会社 | 光起電力素子及び発電システム |
JP3081394B2 (ja) * | 1992-12-11 | 2000-08-28 | キヤノン株式会社 | 光起電力素子及び発電システム |
DE69326878T2 (de) * | 1992-12-14 | 2000-04-27 | Canon Kk | Lichtempfindliches Element mit einer mehrschichtigen Schicht mit erhöhter Wasserstoff oder/und Halogenatom Konzentration im Grenzflächenbereich benachbarter Schichten |
JPH0795603A (ja) | 1993-09-24 | 1995-04-07 | Hitachi Ltd | 投射型カラーテレビジョン装置 |
US5620906A (en) * | 1994-02-28 | 1997-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device by introducing hydrogen ions |
JP2984537B2 (ja) * | 1994-03-25 | 1999-11-29 | キヤノン株式会社 | 光起電力素子 |
JP3121617B2 (ja) * | 1994-07-21 | 2001-01-09 | 松下電器産業株式会社 | 半導体発光素子およびその製造方法 |
US5736431A (en) | 1995-02-28 | 1998-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing thin film solar battery |
US5769963A (en) * | 1995-08-31 | 1998-06-23 | Canon Kabushiki Kaisha | Photovoltaic device |
JPH09148581A (ja) * | 1995-11-17 | 1997-06-06 | Sharp Corp | 薄膜半導体装置の製造方法 |
JP3754815B2 (ja) | 1997-02-19 | 2006-03-15 | キヤノン株式会社 | 光起電力素子、光電変換素子、光起電力素子の製造方法及び光電変換素子の製造方法 |
JP3123465B2 (ja) * | 1997-06-09 | 2001-01-09 | 日本電気株式会社 | Misトランジスタの製造方法 |
US6242080B1 (en) * | 1997-07-09 | 2001-06-05 | Canon Kabushiki Kaisha | Zinc oxide thin film and process for producing the film |
JPH1172938A (ja) * | 1997-08-27 | 1999-03-16 | Canon Inc | 電子写真用光受容部材 |
JP3768672B2 (ja) | 1998-02-26 | 2006-04-19 | キヤノン株式会社 | 積層型光起電力素子 |
EP0949688A1 (de) | 1998-03-31 | 1999-10-13 | Phototronics Solartechnik GmbH | Dünnschichtsolarzelle, Verfahren zu deren Herstellung sowie Vorrichtung zur Durchführung des Verfahrens |
US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
JP3792903B2 (ja) * | 1998-07-22 | 2006-07-05 | 株式会社カネカ | 半導体薄膜および薄膜デバイス |
JP2001345463A (ja) | 2000-05-31 | 2001-12-14 | Sanyo Electric Co Ltd | 光起電力装置及びその製造方法 |
JP3490964B2 (ja) | 2000-09-05 | 2004-01-26 | 三洋電機株式会社 | 光起電力装置 |
JP2002260448A (ja) * | 2000-11-21 | 2002-09-13 | Nippon Sheet Glass Co Ltd | 導電膜、その製造方法、それを備えた基板および光電変換装置 |
JP4869509B2 (ja) * | 2001-07-17 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2004165394A (ja) * | 2002-11-13 | 2004-06-10 | Canon Inc | 積層型光起電力素子 |
JP3823919B2 (ja) * | 2002-12-25 | 2006-09-20 | コニカミノルタホールディングス株式会社 | 撮像装置 |
-
2004
- 2004-01-13 JP JP2004005071A patent/JP4171428B2/ja not_active Expired - Lifetime
- 2004-03-08 US US10/793,844 patent/US7863518B2/en active Active
- 2004-03-17 EP EP04251500A patent/EP1460693B1/en not_active Expired - Lifetime
- 2004-03-17 CN CNB2004100294317A patent/CN100466299C/zh not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012043124A1 (ja) | 2010-10-01 | 2012-04-05 | 株式会社カネカ | 光電変換装置の製造方法 |
US8691613B2 (en) | 2010-10-01 | 2014-04-08 | Kaneka Corporation | Method for manufacturing photoelectric conversion device |
Also Published As
Publication number | Publication date |
---|---|
CN1532952A (zh) | 2004-09-29 |
EP1460693B1 (en) | 2011-07-13 |
CN100466299C (zh) | 2009-03-04 |
EP1460693A2 (en) | 2004-09-22 |
EP1460693A3 (en) | 2007-05-16 |
US7863518B2 (en) | 2011-01-04 |
JP2004304160A (ja) | 2004-10-28 |
US20040182433A1 (en) | 2004-09-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4171428B2 (ja) | 光起電力装置 | |
US7964431B2 (en) | Method to make electrical contact to a bonded face of a photovoltaic cell | |
JP5526461B2 (ja) | 光起電力装置 | |
US20150040975A1 (en) | Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design | |
JP5424800B2 (ja) | デュアルドーピングを備えたヘテロ接合光電池及びその製造方法 | |
US20080174028A1 (en) | Method and Apparatus For A Semiconductor Structure Forming At Least One Via | |
US9705022B2 (en) | Photovoltaic device | |
JP4093892B2 (ja) | 光起電力装置の製造方法 | |
WO2010019379A1 (en) | Photovoltaic cell comprising a thin lamina having a rear junction and method of making | |
US20120015474A1 (en) | Method for fabricating silicon heterojunction solar cells | |
JP2001267598A (ja) | 積層型太陽電池 | |
JP2014072406A (ja) | 太陽電池およびその製造方法、太陽電池モジュール | |
JP2007227692A (ja) | 光起電力装置 | |
JP4864077B2 (ja) | 光電変換装置およびその製造方法 | |
WO2016140309A1 (ja) | 光電変換素子およびその製造方法 | |
JP4441377B2 (ja) | 光電変換装置およびその製造方法 | |
JPH0823114A (ja) | 太陽電池 | |
WO2006049003A1 (ja) | 薄膜光電変換装置の製造方法 | |
JP4363877B2 (ja) | 光起電力装置およびその製造方法 | |
JP4441298B2 (ja) | 光電変換装置およびその製造方法 | |
JP2006073878A (ja) | 光電変換装置およびその製造方法 | |
KR102661526B1 (ko) | 이종접합 태양전지 및 그 제조방법 | |
JP4864078B2 (ja) | 光電変換装置およびその製造方法 | |
TW201442267A (zh) | 太陽能電池及其製造方法 | |
TW202337041A (zh) | 太陽能電池及其形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071113 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071120 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080121 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080715 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080808 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110815 Year of fee payment: 3 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4171428 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110815 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110815 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120815 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130815 Year of fee payment: 5 |
|
EXPY | Cancellation because of completion of term |