JP4614655B2 - 光起電力装置の製造方法 - Google Patents
光起電力装置の製造方法 Download PDFInfo
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- JP4614655B2 JP4614655B2 JP2003426668A JP2003426668A JP4614655B2 JP 4614655 B2 JP4614655 B2 JP 4614655B2 JP 2003426668 A JP2003426668 A JP 2003426668A JP 2003426668 A JP2003426668 A JP 2003426668A JP 4614655 B2 JP4614655 B2 JP 4614655B2
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- 238000004519 manufacturing process Methods 0.000 title description 21
- 238000000034 method Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims description 65
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 63
- 239000004065 semiconductor Substances 0.000 claims description 41
- 238000010304 firing Methods 0.000 claims description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 description 74
- 239000012535 impurity Substances 0.000 description 51
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 18
- 230000007547 defect Effects 0.000 description 18
- 239000013078 crystal Substances 0.000 description 16
- 229910052698 phosphorus Inorganic materials 0.000 description 16
- 239000011574 phosphorus Substances 0.000 description 16
- 238000002161 passivation Methods 0.000 description 14
- 239000011521 glass Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 238000003795 desorption Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
図1は、本発明の第1実施形態による光起電力装置の構造を示した断面図である。まず、図1を参照して、第1実施形態による光起電力装置の構造について説明する。
図8は、本発明の第2実施形態による光起電力装置の構造を示した断面図である。図8を参照して、第2実施形態による光起電力装置の構造について説明する。この第2実施形態による光起電力装置では、上記した第1実施形態による光起電力装置と異なり、n型単結晶シリコン基板11の光入射側の表面の光入射側集電極2と接触する領域の近傍の領域のみにn型高不純物濃度領域11aが形成されている。すなわち、n型単結晶シリコン基板11の光入射側の表面の光入射側集電極2近傍の領域以外の領域には、n型高不純物濃度領域11aは形成されていない。第2実施形態による光起電力装置のこれ以外の構造は、上記した第1実施形態による光起電力装置の構造と同様である。
1a、11a n型高不純物濃度領域
2 光入射側集電極(第1集電極、集電極)
3 パッシベーション層
4 i型非晶質シリコン層(第1非単結晶半導体層、非単結晶半導体層)
5 p型非晶質シリコン層(第2非単結晶半導体層、非単結晶半導体層)
6 透明導電膜
7 裏面側集電極(第2集電極)
8、18 リンガラス層
Claims (1)
- 500℃以上の温度で高温焼結型の導電ペーストを焼成することによって、n型の単結晶シリコン基板の光入射側の表面上に第1集電極を形成する工程と、
前記第1集電極を形成した後に、前記単結晶シリコン基板の前記光入射側と反対側の表面上に10nm以上30nm以下の厚みを有するi型非晶質半導体層と、p型非晶質半導体層とを形成する工程と、
300℃以下の温度で低温焼成型の導電ペーストを焼成することによって、前記p型非晶質半導体層の表面上に第2集電極を形成する工程とを備えた、光起電力装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2003426668A JP4614655B2 (ja) | 2003-12-24 | 2003-12-24 | 光起電力装置の製造方法 |
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JP2003426668A JP4614655B2 (ja) | 2003-12-24 | 2003-12-24 | 光起電力装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005191024A JP2005191024A (ja) | 2005-07-14 |
JP4614655B2 true JP4614655B2 (ja) | 2011-01-19 |
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JP2003426668A Expired - Fee Related JP4614655B2 (ja) | 2003-12-24 | 2003-12-24 | 光起電力装置の製造方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1696492B1 (en) | 2005-02-25 | 2012-04-11 | Sanyo Electric Co., Ltd. | Photovoltaic cell |
JP5728868B2 (ja) * | 2010-09-24 | 2015-06-03 | 日立化成株式会社 | n型拡散層形成組成物、n型拡散層形成組成物の製造方法、n型拡散層の製造方法、及び太陽電池セルの製造方法 |
JPWO2012132758A1 (ja) * | 2011-03-28 | 2014-07-28 | 三洋電機株式会社 | 光電変換装置及び光電変換装置の製造方法 |
JP2012231013A (ja) * | 2011-04-26 | 2012-11-22 | Hitachi Chem Co Ltd | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池素子の製造方法 |
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