HK99097A - Compact semiconductor store arrangement and process for its production - Google Patents

Compact semiconductor store arrangement and process for its production

Info

Publication number
HK99097A
HK99097A HK99097A HK99097A HK99097A HK 99097 A HK99097 A HK 99097A HK 99097 A HK99097 A HK 99097A HK 99097 A HK99097 A HK 99097A HK 99097 A HK99097 A HK 99097A
Authority
HK
Hong Kong
Prior art keywords
trench
pct
selection transistor
storage cells
sec
Prior art date
Application number
HK99097A
Other languages
English (en)
Inventor
Hanno Dipl-Phys Melzner
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of HK99097A publication Critical patent/HK99097A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Memories (AREA)
  • Die Bonding (AREA)
  • Ceramic Capacitors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
HK99097A 1991-07-30 1997-06-26 Compact semiconductor store arrangement and process for its production HK99097A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4125199A DE4125199C2 (de) 1991-07-30 1991-07-30 Kompakte Halbleiterspeicheranordnung, Verfahren zu deren Herstellung und Speichermatrix
PCT/EP1992/001653 WO1993003501A1 (de) 1991-07-30 1992-07-20 Kompakte halbleiterspeicheranordnung und verfahren zu deren herstellung

Publications (1)

Publication Number Publication Date
HK99097A true HK99097A (en) 1997-08-08

Family

ID=6437311

Family Applications (1)

Application Number Title Priority Date Filing Date
HK99097A HK99097A (en) 1991-07-30 1997-06-26 Compact semiconductor store arrangement and process for its production

Country Status (9)

Country Link
US (1) US5378907A (xx)
EP (1) EP0596975B1 (xx)
JP (1) JP3431143B2 (xx)
KR (1) KR100273779B1 (xx)
AT (1) ATE131314T1 (xx)
DE (2) DE4125199C2 (xx)
HK (1) HK99097A (xx)
IE (1) IE80400B1 (xx)
WO (1) WO1993003501A1 (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614431A (en) * 1995-12-20 1997-03-25 International Business Machines Corporation Method of making buried strap trench cell yielding an extended transistor
DE19701935C1 (de) * 1997-01-21 1997-12-11 Siemens Ag Verfahren zur Herstellung eines Siliziumkondensators
US5909044A (en) 1997-07-18 1999-06-01 International Business Machines Corporation Process for forming a high density semiconductor device
US6153902A (en) * 1999-08-16 2000-11-28 International Business Machines Corporation Vertical DRAM cell with wordline self-aligned to storage trench
US6093600A (en) * 1999-10-29 2000-07-25 United Silicon, Inc. Method of fabricating a dynamic random-access memory device
DE10233760B4 (de) * 2002-07-25 2007-05-03 Infineon Technologies Ag SRAM-Speicherzelle mit Älzgräben und deren Array-Anordnung
US6552382B1 (en) * 2002-09-30 2003-04-22 Intelligent Sources Development Corp. Scalable vertical DRAM cell structure and its manufacturing methods
JP4801986B2 (ja) * 2005-02-03 2011-10-26 株式会社東芝 半導体記憶装置
US20100155801A1 (en) * 2008-12-22 2010-06-24 Doyle Brian S Integrated circuit, 1T-1C embedded memory cell containing same, and method of manufacturing 1T-1C memory cell for embedded memory application

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6155957A (ja) * 1984-08-27 1986-03-20 Toshiba Corp 半導体記憶装置
JPS62136069A (ja) * 1985-12-10 1987-06-19 Hitachi Ltd 半導体装置およびその製造方法
JPH0646651B2 (ja) * 1987-03-16 1994-06-15 富士通株式会社 ダイナミツクランダムアクセスメモリ装置
JPS645052A (en) * 1987-06-29 1989-01-10 Mitsubishi Electric Corp Capacitor cell of semiconductor storage device
US4912535A (en) * 1987-08-08 1990-03-27 Mitsubishi Denki Kabushiki Kaisha Trench type semiconductor memory device having side wall contact
US4894969A (en) * 1988-05-18 1990-01-23 Ag-Tech Packaging, Inc. Insulating block form for constructing concrete wall structures
JPH02106958A (ja) * 1988-10-17 1990-04-19 Hitachi Ltd 半導体装置
US4984696A (en) * 1989-12-11 1991-01-15 Amsted Industries Incorporated Railway coupler head strengthened at horn line
JPH03259567A (ja) * 1990-03-09 1991-11-19 Toshiba Corp 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
JP3431143B2 (ja) 2003-07-28
IE80400B1 (en) 1998-06-17
KR100273779B1 (ko) 2000-12-15
DE59204621D1 (de) 1996-01-18
EP0596975A1 (de) 1994-05-18
US5378907A (en) 1995-01-03
JPH06509443A (ja) 1994-10-20
DE4125199C2 (de) 1994-04-28
EP0596975B1 (de) 1995-12-06
DE4125199A1 (de) 1993-02-04
WO1993003501A1 (de) 1993-02-18
ATE131314T1 (de) 1995-12-15
IE922466A1 (en) 1993-02-10

Similar Documents

Publication Publication Date Title
CN100380666C (zh) 薄膜存储器、阵列及其操作方法和制造方法
US6107642A (en) SRAM cell with thin film transistor using two polysilicon layers
US5032882A (en) Semiconductor device having trench type structure
KR930020690A (ko) 동적 메모리 셀
KR860002145A (ko) 반도체 기억장치
TW325598B (en) Electrically programmable memory cell arrangement and method for its production
EP0352893B1 (en) Metal insulator semiconductor type dynamic random access memory device
KR860001058B1 (en) Semiconductor memory device
KR860000716A (ko) 다이내믹형 메모리셀과 그 제조방법
HK8995A (en) Three-dimensional 1-transistor cell structure with a trench capacitor for a dynamic semiconductor memory, and method for producing the bit line contact
HK99097A (en) Compact semiconductor store arrangement and process for its production
KR850006782A (ko) 반도체 메모리
US5463236A (en) Semiconductor memory device having improved isolation structure among memory cells
US4392210A (en) One transistor-one capacitor memory cell
JPS6489560A (en) Semiconductor memory
DE59506590D1 (de) Halbleiteranordnung mit selbstjustierten Kontakten und Verfahren zu ihrer Herstellung
US4827448A (en) Random access memory cell with implanted capacitor region
KR980006297A (ko) 다중 레벨 도전체 워드라인 스트래핑 방법
JP2554332B2 (ja) １トランジスタ型ダイナミツクメモリセル
JPH07509808A (ja) ダイナミック形ランダムアクセスメモリセル構造
US4891747A (en) Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain
JPH0691216B2 (ja) 半導体記憶装置
JPS61140171A (ja) 半導体記憶装置
JPS6182459A (ja) 半導体記憶装置
JPS63155662A (ja) Ｃｍｉｓ型ダイナミツクメモリ装置

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)