HK178096A - A flash erasable single poly eprom device - Google Patents

A flash erasable single poly eprom device

Info

Publication number
HK178096A
HK178096A HK178096A HK178096A HK178096A HK 178096 A HK178096 A HK 178096A HK 178096 A HK178096 A HK 178096A HK 178096 A HK178096 A HK 178096A HK 178096 A HK178096 A HK 178096A
Authority
HK
Hong Kong
Prior art keywords
single poly
eprom device
flash erasable
poly eprom
erasable single
Prior art date
Application number
HK178096A
Other languages
English (en)
Inventor
Stephen F Sullivan
Neal R Mielke
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of HK178096A publication Critical patent/HK178096A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
HK178096A 1992-06-22 1996-09-26 A flash erasable single poly eprom device HK178096A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/901,736 US5301150A (en) 1992-06-22 1992-06-22 Flash erasable single poly EPROM device

Publications (1)

Publication Number Publication Date
HK178096A true HK178096A (en) 1996-10-04

Family

ID=25414726

Family Applications (1)

Application Number Title Priority Date Filing Date
HK178096A HK178096A (en) 1992-06-22 1996-09-26 A flash erasable single poly eprom device

Country Status (6)

Country Link
US (1) US5301150A (xx)
FR (1) FR2692720B1 (xx)
GB (1) GB2268330B (xx)
HK (1) HK178096A (xx)
IT (1) IT1264572B1 (xx)
SG (1) SG42988A1 (xx)

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US6631087B2 (en) 2000-06-23 2003-10-07 Gennum Corporation Low voltage single poly deep sub-micron flash eeprom
EP1207534A1 (en) * 2000-11-17 2002-05-22 Motorola, Inc. Integrated circuit eeprom memory and method of programming the same
US6731541B2 (en) 2001-05-09 2004-05-04 Gennum Corporation Low voltage single poly deep sub-micron flash EEPROM
US6574158B1 (en) 2001-09-27 2003-06-03 Cypress Semiconductor Corp. Method and system for measuring threshold of EPROM cells
US20030123299A1 (en) * 2002-01-02 2003-07-03 Annavajjhala Ravi P. Protection circuit
US6605984B2 (en) 2002-01-02 2003-08-12 Intel Corporation Charge pump ripple reduction
US6836176B2 (en) * 2002-01-02 2004-12-28 Intel Corporation Charge pump ripple reduction
US6862223B1 (en) 2002-07-05 2005-03-01 Aplus Flash Technology, Inc. Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
US7064978B2 (en) * 2002-07-05 2006-06-20 Aplus Flash Technology, Inc. Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
US7212446B2 (en) * 2002-09-16 2007-05-01 Impinj, Inc. Counteracting overtunneling in nonvolatile memory cells using charge extraction control
US20050030827A1 (en) * 2002-09-16 2005-02-10 Impinj, Inc., A Delaware Corporation PMOS memory cell
US7149118B2 (en) * 2002-09-16 2006-12-12 Impinj, Inc. Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
US6998670B2 (en) * 2003-04-25 2006-02-14 Atmel Corporation Twin EEPROM memory transistors with subsurface stepped floating gates
US6842327B1 (en) * 2003-08-05 2005-01-11 Impinj, Inc. High-voltage CMOS-compatible capacitors
US7856209B1 (en) 2003-12-08 2010-12-21 Airtight Networks, Inc. Method and system for location estimation in wireless networks
US7339914B2 (en) 2004-02-11 2008-03-04 Airtight Networks, Inc. Automated sniffer apparatus and method for monitoring computer systems for unauthorized access
US7283390B2 (en) 2004-04-21 2007-10-16 Impinj, Inc. Hybrid non-volatile memory
US8111558B2 (en) * 2004-05-05 2012-02-07 Synopsys, Inc. pFET nonvolatile memory
US20060134862A1 (en) * 2004-12-17 2006-06-22 Patrice Parris CMOS NVM bitcell and integrated circuit
JP4800109B2 (ja) * 2005-09-13 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置
JP2007123830A (ja) * 2005-09-29 2007-05-17 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
JP2007149997A (ja) * 2005-11-29 2007-06-14 Nec Electronics Corp 不揮発性メモリセル及びｅｅｐｒｏｍ
US7382658B2 (en) * 2006-01-26 2008-06-03 Mosys, Inc. Non-volatile memory embedded in a conventional logic process and methods for operating same
US20070170489A1 (en) * 2006-01-26 2007-07-26 Fang Gang-Feng Method to increase charge retention of non-volatile memory manufactured in a single-gate logic process
US7768059B2 (en) * 2006-06-26 2010-08-03 Ememory Technology Inc. Nonvolatile single-poly memory device
US20070296034A1 (en) * 2006-06-26 2007-12-27 Hsin-Ming Chen Silicon-on-insulator (soi) memory device
US7868372B2 (en) * 2006-07-10 2011-01-11 United Microelectronics Corp. Depletion-mode single-poly EEPROM cell
US8122307B1 (en) 2006-08-15 2012-02-21 Synopsys, Inc. One time programmable memory test structures and methods
US7777271B1 (en) * 2006-09-01 2010-08-17 National Semiconductor Corporation System and method for providing low cost high endurance low voltage electrically erasable programmable read only memory
US7612397B2 (en) * 2006-11-10 2009-11-03 Sharp Kabushiki Kaisha Memory cell having first and second capacitors with electrodes acting as control gates for nonvolatile memory transistors
US7755941B2 (en) 2007-02-23 2010-07-13 Panasonic Corporation Nonvolatile semiconductor memory device
US8093649B2 (en) * 2008-03-28 2012-01-10 National Tsing Hua University Flash memory cell
US7894261B1 (en) 2008-05-22 2011-02-22 Synopsys, Inc. PFET nonvolatile memory
US9048137B2 (en) 2012-02-17 2015-06-02 Flashsilicon Incorporation Scalable gate logic non-volatile memory cells and arrays
US8879323B2 (en) 2012-11-21 2014-11-04 Flashsilicon Incorporation Interconnection matrix using semiconductor non-volatile memory
US8988104B2 (en) 2013-02-27 2015-03-24 Flashsilicon Incorporation Multiple-time configurable non-volatile look-up-table
US9087587B2 (en) 2013-03-15 2015-07-21 GlobalFoundries, Inc. Integrated circuits and methods for operating integrated circuits with non-volatile memory
US8975679B1 (en) 2013-09-10 2015-03-10 Gembedded Tech Ltd. Single-poly non-volatile memory cell

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DE3029539A1 (de) * 1980-08-04 1982-03-11 Deutsche Itt Industries Gmbh, 7800 Freiburg Nichtfluechtige, programmierbare integrierte halbleiterspeicherzelle
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JPS61105862A (ja) * 1984-10-30 1986-05-23 Toshiba Corp 半導体装置
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IT1198109B (it) * 1986-11-18 1988-12-21 Sgs Microelettronica Spa Cella di memoria eeprom a singolo livello di polisilicio con zona di ossido di tunnel
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Also Published As

Publication number Publication date
ITMI931232A1 (it) 1994-12-10
GB9309814D0 (en) 1993-06-23
FR2692720A1 (fr) 1993-12-24
GB2268330B (en) 1996-05-08
US5301150A (en) 1994-04-05
SG42988A1 (en) 1997-10-17
IT1264572B1 (it) 1996-10-04
ITMI931232A0 (it) 1993-06-10
GB2268330A (en) 1994-01-05
FR2692720B1 (fr) 1995-07-13

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20100512