HK1244591A1 - 集成電路器件和方法 - Google Patents

集成電路器件和方法

Info

Publication number
HK1244591A1
HK1244591A1 HK18104040.2A HK18104040A HK1244591A1 HK 1244591 A1 HK1244591 A1 HK 1244591A1 HK 18104040 A HK18104040 A HK 18104040A HK 1244591 A1 HK1244591 A1 HK 1244591A1
Authority
HK
Hong Kong
Prior art keywords
methods
integrated circuit
circuit devices
devices
integrated
Prior art date
Application number
HK18104040.2A
Other languages
English (en)
Inventor
J‧J‧徐
包鈞敬
J‧J‧朱
S‧S‧宋
N‧N‧莫朱梅德
C‧F‧耶普
Original Assignee
高通股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 高通股份有限公司 filed Critical 高通股份有限公司
Publication of HK1244591A1 publication Critical patent/HK1244591A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76858—After-treatment introducing at least one additional element into the layer by diffusing alloying elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y50/00—Data acquisition or data processing for additive manufacturing
    • B33Y50/02—Data acquisition or data processing for additive manufacturing for controlling or regulating additive manufacturing processes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45031—Manufacturing semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Automation & Control Theory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
HK18104040.2A 2015-01-21 2018-03-23 集成電路器件和方法 HK1244591A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562106106P 2015-01-21 2015-01-21
US14/819,159 US9543248B2 (en) 2015-01-21 2015-08-05 Integrated circuit devices and methods
PCT/US2016/014140 WO2016118634A1 (en) 2015-01-21 2016-01-20 Integrated circuit devices and methods

Publications (1)

Publication Number Publication Date
HK1244591A1 true HK1244591A1 (zh) 2018-08-10

Family

ID=56408396

Family Applications (1)

Application Number Title Priority Date Filing Date
HK18104040.2A HK1244591A1 (zh) 2015-01-21 2018-03-23 集成電路器件和方法

Country Status (9)

Country Link
US (2) US9543248B2 (zh)
EP (1) EP3248217B1 (zh)
JP (1) JP6441489B2 (zh)
KR (1) KR101889674B1 (zh)
CN (1) CN107210286B (zh)
BR (1) BR112017015525B1 (zh)
HK (1) HK1244591A1 (zh)
SG (1) SG11201704661TA (zh)
WO (1) WO2016118634A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9543248B2 (en) 2015-01-21 2017-01-10 Qualcomm Incorporated Integrated circuit devices and methods
US9941156B2 (en) * 2015-04-01 2018-04-10 Qualcomm Incorporated Systems and methods to reduce parasitic capacitance
US9564356B2 (en) * 2015-04-16 2017-02-07 International Business Machines Corporation Self-forming metal barriers
US9659864B2 (en) * 2015-10-20 2017-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for forming self-aligned via with selectively deposited etching stop layer
KR102594413B1 (ko) 2018-03-30 2023-10-27 삼성전자주식회사 반도체 장치
US11024581B2 (en) * 2019-02-25 2021-06-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packages and methods of manufacturing the same
CN110148583B (zh) * 2019-05-14 2021-06-18 上海华虹宏力半导体制造有限公司 形成金属互连结构的方法
US11929327B2 (en) * 2020-01-29 2024-03-12 Taiwan Semiconductor Manufacturing Co., Inc. Liner-free conductive structures with anchor points
DE102020119831A1 (de) * 2020-01-29 2021-07-29 Taiwan Semiconductor Manufacturing Co., Ltd. Überzugfreie leitfähige strukturen mit ankerpunkten
WO2022014400A1 (ja) * 2020-07-13 2022-01-20 ソニーセミコンダクタソリューションズ株式会社 配線構造およびその製造方法、ならびに撮像装置
US11876047B2 (en) * 2021-09-14 2024-01-16 International Business Machines Corporation Decoupled interconnect structures

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1012310B (zh) * 1985-05-01 1991-04-03 得克萨斯仪器公司 超大规模集成电路的局部互连方法及其结构
JP2626927B2 (ja) * 1990-10-17 1997-07-02 三菱電機株式会社 半導体装置
JP2660359B2 (ja) * 1991-01-30 1997-10-08 三菱電機株式会社 半導体装置
US5305519A (en) 1991-10-24 1994-04-26 Kawasaki Steel Corporation Multilevel interconnect structure and method of manufacturing the same
JPH05166947A (ja) * 1991-12-13 1993-07-02 Nippon Steel Corp 半導体装置の製造方法
JPH06275721A (ja) * 1993-03-17 1994-09-30 Kawasaki Steel Corp 薄膜形成方法
JP2655471B2 (ja) * 1993-11-17 1997-09-17 日本電気株式会社 半導体装置の製造方法
US5635423A (en) 1994-10-11 1997-06-03 Advanced Micro Devices, Inc. Simplified dual damascene process for multi-level metallization and interconnection structure
US6537905B1 (en) 1996-12-30 2003-03-25 Applied Materials, Inc. Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug
JP3055494B2 (ja) * 1997-06-10 2000-06-26 日本電気株式会社 強誘電体メモリ及びその製造方法
JP3201321B2 (ja) * 1997-11-10 2001-08-20 日本電気株式会社 配線用アルミニウム膜の形成方法
JPH11186390A (ja) 1997-12-25 1999-07-09 Sony Corp 半導体装置の製造方法
US6249055B1 (en) 1998-02-03 2001-06-19 Advanced Micro Devices, Inc. Self-encapsulated copper metallization
JP3125745B2 (ja) * 1998-04-30 2001-01-22 日本電気株式会社 半導体装置の製造方法
JP2000150647A (ja) 1998-11-11 2000-05-30 Sony Corp 配線構造およびその製造方法
US7436281B2 (en) * 2004-07-30 2008-10-14 Texas Instruments Incorporated Method to improve inductance with a high-permeability slotted plate core in an integrated circuit
JP2007173511A (ja) * 2005-12-22 2007-07-05 Sony Corp 半導体装置の製造方法
US7994046B2 (en) * 2006-01-27 2011-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a dielectric layer with an air gap, and a structure including the dielectric layer with the air gap
CN101079408A (zh) * 2006-05-22 2007-11-28 中芯国际集成电路制造(上海)有限公司 双镶嵌结构及其制造方法
JP2008010534A (ja) 2006-06-28 2008-01-17 Sony Corp 半導体装置およびその製造方法
KR100761467B1 (ko) 2006-06-28 2007-09-27 삼성전자주식회사 금속배선 및 그 형성 방법
CN100468691C (zh) * 2006-08-10 2009-03-11 中芯国际集成电路制造(上海)有限公司 凹槽的填充方法及其结构
JP2008172018A (ja) * 2007-01-11 2008-07-24 Elpida Memory Inc 半導体装置及びその製造方法
JP2009099585A (ja) * 2007-10-12 2009-05-07 Panasonic Corp 埋め込み配線の形成方法
JP5149603B2 (ja) * 2007-11-29 2013-02-20 大日本スクリーン製造株式会社 半導体装置の製造方法および半導体装置
US8058728B2 (en) 2008-09-30 2011-11-15 Tokyo Electron Limited Diffusion barrier and adhesion layer for an interconnect structure
US7727883B2 (en) 2008-09-30 2010-06-01 Tokyo Electron Limited Method of forming a diffusion barrier and adhesion layer for an interconnect structure
JP5396065B2 (ja) * 2008-10-28 2014-01-22 株式会社日立製作所 半導体装置の製造方法
JP2010141024A (ja) 2008-12-10 2010-06-24 Renesas Technology Corp 半導体装置の製造方法および半導体装置
US20110204518A1 (en) 2010-02-23 2011-08-25 Globalfoundries Inc. Scalability with reduced contact resistance
JP5634742B2 (ja) * 2010-04-30 2014-12-03 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置の製造方法
US9064875B2 (en) 2010-09-29 2015-06-23 Infineon Technologies Ag Semiconductor structure and method for making same
JP2012134422A (ja) * 2010-12-24 2012-07-12 Panasonic Corp 半導体装置及びその製造方法
JP2013048127A (ja) * 2011-07-26 2013-03-07 Applied Materials Inc アッシュ後の側壁の回復
CN102956546A (zh) * 2011-08-30 2013-03-06 中芯国际集成电路制造(上海)有限公司 铜互连结构及其形成方法
US8648465B2 (en) * 2011-09-28 2014-02-11 International Business Machines Corporation Semiconductor interconnect structure having enhanced performance and reliability
US9123727B2 (en) * 2011-12-29 2015-09-01 Intel Corporation Airgap interconnect with hood layer and method of forming
US8907483B2 (en) * 2012-10-10 2014-12-09 Globalfoundries Inc. Semiconductor device having a self-forming barrier layer at via bottom
US8722531B1 (en) 2012-11-01 2014-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier layer for copper interconnect
US9190321B2 (en) 2013-04-08 2015-11-17 International Business Machines Corporation Self-forming embedded diffusion barriers
US9105497B2 (en) * 2013-09-04 2015-08-11 Globalfoundries Inc. Methods of forming gate structures for transistor devices for CMOS applications
US9659857B2 (en) * 2013-12-13 2017-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method making the same
US9703056B2 (en) * 2014-01-23 2017-07-11 Nxp Usa, Inc. Copper tube interconnect
US9343357B2 (en) * 2014-02-28 2016-05-17 Qualcomm Incorporated Selective conductive barrier layer formation
US9219033B2 (en) * 2014-03-21 2015-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Via pre-fill on back-end-of-the-line interconnect layer
US9543248B2 (en) 2015-01-21 2017-01-10 Qualcomm Incorporated Integrated circuit devices and methods

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JP6441489B2 (ja) 2018-12-19
EP3248217A1 (en) 2017-11-29
US20170092587A1 (en) 2017-03-30
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US9543248B2 (en) 2017-01-10
BR112017015525A2 (pt) 2018-01-30
CN107210286B (zh) 2020-09-11
US20160211216A1 (en) 2016-07-21
CN107210286A (zh) 2017-09-26
BR112017015525B1 (pt) 2022-11-08
WO2016118634A1 (en) 2016-07-28
JP2018507546A (ja) 2018-03-15
KR101889674B1 (ko) 2018-08-17
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US9721891B2 (en) 2017-08-01
KR20170089026A (ko) 2017-08-02

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