HK1214419A1 - 功率放大器 - Google Patents

功率放大器

Info

Publication number
HK1214419A1
HK1214419A1 HK16102267.4A HK16102267A HK1214419A1 HK 1214419 A1 HK1214419 A1 HK 1214419A1 HK 16102267 A HK16102267 A HK 16102267A HK 1214419 A1 HK1214419 A1 HK 1214419A1
Authority
HK
Hong Kong
Prior art keywords
power amplifier
amplifier
power
Prior art date
Application number
HK16102267.4A
Other languages
English (en)
Inventor
Tsutomu Yoshikawa
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Publication of HK1214419A1 publication Critical patent/HK1214419A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/405—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising more than three power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
HK16102267.4A 2013-03-26 2016-02-26 功率放大器 HK1214419A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/058731 WO2014155512A1 (ja) 2013-03-26 2013-03-26 電力増幅器

Publications (1)

Publication Number Publication Date
HK1214419A1 true HK1214419A1 (zh) 2016-07-22

Family

ID=51622600

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16102267.4A HK1214419A1 (zh) 2013-03-26 2016-02-26 功率放大器

Country Status (5)

Country Link
US (1) US9667198B2 (zh)
EP (1) EP2980990B1 (zh)
JP (1) JP6160689B2 (zh)
HK (1) HK1214419A1 (zh)
WO (1) WO2014155512A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3661052A1 (en) 2015-06-08 2020-06-03 NEC Corporation Power amplification device and television signal transmission system
JP6332565B2 (ja) * 2015-09-01 2018-05-30 日本電気株式会社 電力増幅装置およびテレビジョン信号送信システム
TWI727034B (zh) 2016-06-24 2021-05-11 日商東京計器股份有限公司 增幅裝置
EP3382893B1 (en) 2017-03-27 2020-09-16 Ion Beam Applications Rack comprising a high power rf amplifier
JP6891985B2 (ja) * 2018-04-12 2021-06-18 日本電気株式会社 電力増幅装置およびテレビジョン信号送信システム
JP6658788B2 (ja) * 2018-04-12 2020-03-04 日本電気株式会社 電力増幅装置およびテレビジョン信号送信システム
US11146223B2 (en) * 2019-07-01 2021-10-12 Raytheon Company High power radio frequency (RF) amplifiers
TWI710209B (zh) * 2019-07-02 2020-11-11 立積電子股份有限公司 放大裝置
CN113839620A (zh) * 2020-06-23 2021-12-24 中兴通讯股份有限公司 Doherty功率放大器和功率放大方法
CN113258945B (zh) * 2021-05-13 2022-07-19 中国科学院近代物理研究所 一种非平衡功率合成装置及方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57125505A (en) * 1981-01-29 1982-08-04 Fujitsu Ltd Ultrahigh frequency amplifier
US5952886A (en) 1998-01-20 1999-09-14 Motorola, Inc. MMIC power amplifier with diagonal circuitry
GB9901634D0 (en) * 1999-01-27 1999-07-14 Secr Defence Microwave amplifiers
US6232840B1 (en) * 1999-06-10 2001-05-15 Raytheon Company Transistor amplifier having reduced parasitic oscillations
JP2001185967A (ja) 1999-12-27 2001-07-06 Matsushita Electric Ind Co Ltd 高周波電力増幅器
AU2001292953A1 (en) 2000-09-22 2002-04-02 U.S. Monolithics, L.L.C. Mmic folded power amplifier
JP2002344247A (ja) * 2001-05-14 2002-11-29 Mitsubishi Electric Corp 低消費電力増幅装置
US7453320B2 (en) 2003-09-17 2008-11-18 Nec Corporation Amplifier
JP4572103B2 (ja) * 2004-11-04 2010-10-27 Ｎｅｃネットワーク・センサ株式会社 電力増幅器および電力増幅方法
WO2008012898A1 (fr) * 2006-07-27 2008-01-31 Panasonic Corporation Appareil d'amplification de puissance
TWI346449B (en) * 2007-08-16 2011-08-01 Ind Tech Res Inst Power amplifier circuit for multi-frequencies and multi-modes and method for operating the same
US7764120B2 (en) 2008-08-19 2010-07-27 Cree, Inc. Integrated circuit with parallel sets of transistor amplifiers having different turn on power levels
KR100905948B1 (ko) * 2008-08-28 2009-07-06 (주)카이로넷 도허티 증폭기 및 이를 포함하는 신호 증폭 시스템, 신호 증폭 방법
US8154339B2 (en) 2009-09-23 2012-04-10 Tialinx, Inc. V-band high-power transmitter with integrated power combiner
KR101709347B1 (ko) * 2009-12-16 2017-03-09 삼성전자주식회사 결합셀 도허티 전력 증폭 장치 및 방법
JP2011211655A (ja) * 2010-03-30 2011-10-20 Toshiba Corp 高周波増幅器
JP5527047B2 (ja) * 2010-06-29 2014-06-18 富士通株式会社 増幅装置
JP2012029239A (ja) 2010-07-27 2012-02-09 Sumitomo Electric Device Innovations Inc ドハティ増幅器
JP2012100020A (ja) * 2010-11-01 2012-05-24 Toshiba Corp 電力増幅装置
WO2012143748A1 (en) * 2011-04-20 2012-10-26 Freescale Semiconductor, Inc. Amplifiers and related integrated circuits
US20130021104A1 (en) * 2011-07-18 2013-01-24 Ubidyne, Inc. Amplifier arrangement

Also Published As

Publication number Publication date
EP2980990A4 (en) 2017-03-08
JP6160689B2 (ja) 2017-07-12
EP2980990A1 (en) 2016-02-03
EP2980990B1 (en) 2019-01-02
US20160065141A1 (en) 2016-03-03
US9667198B2 (en) 2017-05-30
JPWO2014155512A1 (ja) 2017-02-16
WO2014155512A1 (ja) 2014-10-02

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