HK1204348A1 - 單晶 合成金剛石材料 - Google Patents
單晶 合成金剛石材料Info
- Publication number
- HK1204348A1 HK1204348A1 HK15102265.7A HK15102265A HK1204348A1 HK 1204348 A1 HK1204348 A1 HK 1204348A1 HK 15102265 A HK15102265 A HK 15102265A HK 1204348 A1 HK1204348 A1 HK 1204348A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- cvd
- single crystal
- diamond material
- synthetic diamond
- crystal cvd
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title 1
- 229910003460 diamond Inorganic materials 0.000 title 1
- 239000010432 diamond Substances 0.000 title 1
- 239000000463 material Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/04—Unidirectional solidification of eutectic materials by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161576465P | 2011-12-16 | 2011-12-16 | |
| GBGB1121642.1A GB201121642D0 (en) | 2011-12-16 | 2011-12-16 | Single crtstal cvd synthetic diamond material |
| PCT/EP2012/075237 WO2013087697A1 (en) | 2011-12-16 | 2012-12-12 | Single crystal cvd synthetic diamond material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1204348A1 true HK1204348A1 (zh) | 2015-11-13 |
Family
ID=45560552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK15102265.7A HK1204348A1 (zh) | 2011-12-16 | 2015-03-05 | 單晶 合成金剛石材料 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9260797B2 (zh) |
| EP (1) | EP2791399B8 (zh) |
| JP (1) | JP5786214B2 (zh) |
| CN (1) | CN104185697B (zh) |
| CA (1) | CA2858965C (zh) |
| GB (2) | GB201121642D0 (zh) |
| HK (1) | HK1204348A1 (zh) |
| IL (1) | IL233038A (zh) |
| MY (1) | MY174359A (zh) |
| SG (1) | SG11201403256TA (zh) |
| WO (1) | WO2013087697A1 (zh) |
Families Citing this family (67)
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| CN106460226A (zh) * | 2014-07-15 | 2017-02-22 | 住友电气工业株式会社 | 单晶金刚石、制造单晶金刚石的方法和包含单晶金刚石的工具 |
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| TW201641420A (zh) * | 2015-03-09 | 2016-12-01 | 二A科技有限公司 | 單晶鑽石及其成長方法 |
| GB2540537A (en) | 2015-07-03 | 2017-01-25 | Univ Oxford Innovation Ltd | Crystal defects |
| CN107109691B (zh) * | 2015-07-22 | 2021-05-25 | 住友电气工业株式会社 | 单晶金刚石材料、单晶金刚石芯片和穿孔工具 |
| CN105021288A (zh) * | 2015-08-05 | 2015-11-04 | 浙江大学 | 一种用于热丝化学气相沉积衬底表面温度测量的装置 |
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| GB201522650D0 (en) | 2015-12-22 | 2016-02-03 | Element Six Technologies Ltd | Nitrogen containing single crystal diamond materials optimized for magnetometr applications |
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| GB2562193B (en) | 2016-01-21 | 2021-12-22 | Lockheed Corp | Diamond nitrogen vacancy sensor with common RF and magnetic fields generator |
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| US10527746B2 (en) | 2016-05-31 | 2020-01-07 | Lockheed Martin Corporation | Array of UAVS with magnetometers |
| US10371765B2 (en) | 2016-07-11 | 2019-08-06 | Lockheed Martin Corporation | Geolocation of magnetic sources using vector magnetometer sensors |
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| CN106498363B (zh) * | 2016-09-30 | 2019-06-14 | 浙江工业大学 | 具有SiV发光的超小晶粒尺寸纳米金刚石薄膜及其制备 |
| GB201620413D0 (en) | 2016-12-01 | 2017-01-18 | Element Six Tech Ltd | Single crystal synthetic diamond material via chemical vapour deposition |
| GB201620415D0 (en) * | 2016-12-01 | 2017-01-18 | Element Six Tech Ltd | Single crystal synthetic diamond material via chemical vapour deposition |
| US10379174B2 (en) | 2017-03-24 | 2019-08-13 | Lockheed Martin Corporation | Bias magnet array for magnetometer |
| US10459041B2 (en) | 2017-03-24 | 2019-10-29 | Lockheed Martin Corporation | Magnetic detection system with highly integrated diamond nitrogen vacancy sensor |
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| JP7158966B2 (ja) * | 2018-09-14 | 2022-10-24 | 株式会社東芝 | ダイヤモンド基板、量子デバイス、量子システム、及び、ダイヤモンド基板の製造方法 |
| WO2020067292A1 (ja) * | 2018-09-26 | 2020-04-02 | 日本ラボグロウンダイヤモンド株式会社 | 多色ダイヤモンド及びその製造方法 |
| GB201904435D0 (en) | 2019-03-29 | 2019-05-15 | Element Six Tech Ltd | Single crystal synthetic diamond material |
| US11753740B2 (en) | 2019-11-18 | 2023-09-12 | Shin-Etsu Chemical Co., Ltd. | Diamond substrate and method for manufacturing the same |
| CN111584382B (zh) * | 2020-04-27 | 2023-02-24 | 哈尔滨工业大学 | 利用金刚石nv色心原位表征异质界面状态的方法 |
| US20220317002A1 (en) * | 2021-03-31 | 2022-10-06 | The Research Foundation For The State University Of New York | Systems and methods for annealing samples |
| CN113026001B8 (zh) * | 2021-05-26 | 2021-09-14 | 上海征世科技股份有限公司 | 一种介稳态控制制备金刚石的方法 |
| GB2618050A (en) | 2021-08-24 | 2023-11-01 | Element Six Tech Ltd | Raman laser system |
| GB2614521A (en) | 2021-10-19 | 2023-07-12 | Element Six Tech Ltd | CVD single crystal diamond |
| GB2614522B (en) | 2021-10-19 | 2024-04-03 | Element Six Tech Ltd | CVD single crystal diamond |
| JP7479577B1 (ja) | 2022-12-17 | 2024-05-08 | 株式会社ディスコ | 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法 |
| JP7382692B1 (ja) | 2023-03-08 | 2023-11-17 | 株式会社ディスコ | デトネーションダイヤモンド含有単結晶質ダイヤモンド、デトネーションダイヤモンド含有単結晶質ダイヤモンドを備える多結晶ダイヤモンド粒子、およびデトネーションダイヤモンド含有単結晶質ダイヤモンドを備える多結晶ダイヤモンド粒子の製造方法 |
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-
2011
- 2011-12-16 GB GBGB1121642.1A patent/GB201121642D0/en not_active Ceased
-
2012
- 2012-12-12 CA CA2858965A patent/CA2858965C/en active Active
- 2012-12-12 EP EP12809688.0A patent/EP2791399B8/en active Active
- 2012-12-12 CN CN201280068219.4A patent/CN104185697B/zh active Active
- 2012-12-12 MY MYPI2014701588A patent/MY174359A/en unknown
- 2012-12-12 GB GB1222318.6A patent/GB2497660B/en active Active
- 2012-12-12 JP JP2014546485A patent/JP5786214B2/ja active Active
- 2012-12-12 US US14/362,822 patent/US9260797B2/en active Active
- 2012-12-12 SG SG11201403256TA patent/SG11201403256TA/en unknown
- 2012-12-12 WO PCT/EP2012/075237 patent/WO2013087697A1/en active Application Filing
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2014
- 2014-06-09 IL IL233038A patent/IL233038A/en active IP Right Grant
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2015
- 2015-03-05 HK HK15102265.7A patent/HK1204348A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IL233038A0 (en) | 2014-07-31 |
| GB2497660A (en) | 2013-06-19 |
| IL233038A (en) | 2017-05-29 |
| US20140335339A1 (en) | 2014-11-13 |
| CN104185697B (zh) | 2017-03-15 |
| GB201222318D0 (en) | 2013-01-23 |
| MY174359A (en) | 2020-04-10 |
| US9260797B2 (en) | 2016-02-16 |
| CA2858965A1 (en) | 2013-06-20 |
| EP2791399B1 (en) | 2017-03-29 |
| JP5786214B2 (ja) | 2015-09-30 |
| JP2015505810A (ja) | 2015-02-26 |
| EP2791399A1 (en) | 2014-10-22 |
| CN104185697A (zh) | 2014-12-03 |
| CA2858965C (en) | 2016-04-26 |
| GB201121642D0 (en) | 2012-01-25 |
| WO2013087697A1 (en) | 2013-06-20 |
| GB2497660B (en) | 2014-08-06 |
| SG11201403256TA (en) | 2014-07-30 |
| EP2791399B8 (en) | 2017-06-07 |
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