HK1199684A1 - 具有多個放大器晶體管的高動態範圍像素 - Google Patents
具有多個放大器晶體管的高動態範圍像素Info
- Publication number
- HK1199684A1 HK1199684A1 HK15100078.8A HK15100078A HK1199684A1 HK 1199684 A1 HK1199684 A1 HK 1199684A1 HK 15100078 A HK15100078 A HK 15100078A HK 1199684 A1 HK1199684 A1 HK 1199684A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- dynamic range
- high dynamic
- amplifier transistors
- range pixel
- pixel
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/741—Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/781,388 US8969775B2 (en) | 2013-02-28 | 2013-02-28 | High dynamic range pixel having a plurality of amplifier transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1199684A1 true HK1199684A1 (zh) | 2015-07-10 |
Family
ID=51387176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK15100078.8A HK1199684A1 (zh) | 2013-02-28 | 2015-01-06 | 具有多個放大器晶體管的高動態範圍像素 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8969775B2 (zh) |
CN (1) | CN104023183B (zh) |
HK (1) | HK1199684A1 (zh) |
TW (1) | TWI516123B (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10134788B2 (en) * | 2013-09-17 | 2018-11-20 | Omnivision Technologies, Inc. | Dual VPIN HDR image sensor pixel |
US9305949B2 (en) * | 2013-11-01 | 2016-04-05 | Omnivision Technologies, Inc. | Big-small pixel scheme for image sensors |
US9324759B2 (en) | 2013-12-19 | 2016-04-26 | Omnivision Technologies, Inc. | Image sensor pixel for high dynamic range image sensor |
US9929204B2 (en) | 2014-03-13 | 2018-03-27 | Samsung Electronics Co., Ltd. | Unit pixel of image sensor, image sensor including the same and method of manufacturing image sensor |
JP2015185823A (ja) * | 2014-03-26 | 2015-10-22 | ソニー株式会社 | 固体撮像素子、及び、撮像装置 |
JP6261430B2 (ja) * | 2014-04-01 | 2018-01-17 | キヤノン株式会社 | 撮像装置及び画像処理システム |
KR20160112775A (ko) * | 2015-03-20 | 2016-09-28 | 에스케이하이닉스 주식회사 | 이미지 센서 |
CN105681690B (zh) * | 2016-03-10 | 2018-05-25 | 长春长光辰芯光电技术有限公司 | 双转移栅高动态范围图像传感器像素的全局快门控制方法 |
DE102016212784A1 (de) * | 2016-07-13 | 2018-01-18 | Robert Bosch Gmbh | CMOS Pixel, Bildsensor und Kamera sowie Verfahren zum Auslesen eienes CMOS Pixels |
US10218924B2 (en) * | 2017-04-12 | 2019-02-26 | Omnivision Technologies, Inc. | Low noise CMOS image sensor by stack architecture |
KR102489832B1 (ko) | 2018-01-12 | 2023-01-18 | 삼성전자주식회사 | 이미지 센서의 픽셀 어레이 및 이를 포함하는 이미지 센서 |
US10334191B1 (en) * | 2018-03-02 | 2019-06-25 | Omnivision Technologies, Inc. | Pixel array with embedded split pixels for high dynamic range imaging |
US10893222B2 (en) * | 2018-03-29 | 2021-01-12 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device and camera system, and driving method of imaging device |
JP7299680B2 (ja) * | 2018-08-23 | 2023-06-28 | キヤノン株式会社 | 撮像装置及び撮像システム |
US11451717B2 (en) * | 2019-11-05 | 2022-09-20 | Omnivision Technologies, Inc. | Multi-cell pixel array for high dynamic range image sensors |
US11658202B2 (en) * | 2020-05-15 | 2023-05-23 | Omnivision Technologies, Inc. | Dual row select pixel for fast pixel binning |
US11527569B2 (en) * | 2020-05-18 | 2022-12-13 | Omnivision Technologies, Inc. | High dynamic range split pixel CMOS image sensor with low color crosstalk |
KR20220169592A (ko) * | 2021-06-21 | 2022-12-28 | 삼성전자주식회사 | 이미지 센싱 장치 |
US11457163B1 (en) * | 2021-07-16 | 2022-09-27 | Pixart Imaging Inc. | Image sensor device capable of improving signal discrimination in dark condition and avoiding signal saturation in bright condition |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4177287B2 (ja) * | 2004-05-14 | 2008-11-05 | 東芝松下ディスプレイテクノロジー株式会社 | インプットセンサ内蔵ディスプレイ装置及びその駆動方法 |
KR100657863B1 (ko) | 2005-02-07 | 2006-12-14 | 삼성전자주식회사 | 핑거드 타입 소스 폴로워 트랜지스터를 이용한 상보성금속 산화막 반도체 액티브 픽셀 센서 |
US7825966B2 (en) * | 2007-06-29 | 2010-11-02 | Omnivision Technologies, Inc. | High dynamic range sensor with blooming drain |
JP5258416B2 (ja) * | 2008-06-27 | 2013-08-07 | パナソニック株式会社 | 固体撮像装置 |
US8891978B2 (en) * | 2008-09-19 | 2014-11-18 | National University Corporation Shizuoka University | Information-acquisition device and optical communication system |
KR20100054540A (ko) | 2008-11-14 | 2010-05-25 | 삼성전자주식회사 | 픽셀 회로, 광전 변환장치, 및 이를 포함하는 이미지 센싱 시스템 |
US20130256509A1 (en) | 2012-03-27 | 2013-10-03 | Omnivision Technologies, Inc. | Dual source follower pixel cell architecture |
-
2013
- 2013-02-28 US US13/781,388 patent/US8969775B2/en active Active
- 2013-09-27 TW TW102135193A patent/TWI516123B/zh active
- 2013-10-25 CN CN201310511423.5A patent/CN104023183B/zh active Active
-
2015
- 2015-01-06 HK HK15100078.8A patent/HK1199684A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US8969775B2 (en) | 2015-03-03 |
CN104023183B (zh) | 2017-05-17 |
TW201434317A (zh) | 2014-09-01 |
US20140239154A1 (en) | 2014-08-28 |
TWI516123B (zh) | 2016-01-01 |
CN104023183A (zh) | 2014-09-03 |
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